检索结果-内蒙古大学图书馆

CMOS-compatible wafer-scale Si subulate array for superb switching uniformity of RRAM with localized nanofilaments

Science China Materials 2022年第6期65卷 1623-1630页

作者： Ying Zhang Xiaolong Zhao Xiaolan Ma Yu Liu Xuanze Zhou Meiyun Zhang Guangwei Xu Shibing Long Key Laboratory of Microelectronic Devices&Integration Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China School of Microelectronics University of Science and Technology of ChinaHefei 230026China University of Chinese Academy of Sciences Beijing 100049China

Resistive switching random access memory(RRAM)is one of the most promising candidates with highdensity three-dimensional integration characteristics for nextgeneration nonvolatile memory ***,the poor uniformity issue caused by the stochastic property of the conductive filament(CF)impedes the large-scale manufacture of RRAM *** array has been introduced into the RRAM to minimize the CF randomness,but the methods are cumbersome,expensive,or resolution-limited for large-scale *** this work,Si subulate array(SSA)substrates with different curvature radii prepared by a wafer-scale and nanoscale-controllable method are introduced for RRAM *** SSA structure,which induces a quasi-single CF or a few CFs formed in the tip region(TR)of the device as evidenced by the high-resolution transmission electron microscopy and energy dispersive spectroscopy characterization,dramatically improves the cycle-to-cycle and device-to-device *** the curvature radius of the TR significantly improves the device performance,including switching voltages,high/low resistance states,and retention *** improved uniformity can be attributed to the enhanced local electric field in the *** proposed SSA provides a low-cost,uniform,CMOS-compatible,and nanoscale-controllable optimization strategy for the largescale integration of highly uniform RRAM devices.

关键词： resistive switching memristor RRAM Si subulate array enhancement of electric field

来源：评论

学校读者我要写书评

暂无评论

Design of a Three-Dimensional Inlet Structure for Preventing Cell Deposition of Microfluidic Flow Cytometry 10

Design of a Three-Dimensional Inlet Structure for Preventing...

引用

10th International Symposium on Next Generation Electronics, ISNE 2022

作者： Hu, Yu Li, Ya Wang, Xu Du, Ziqiang Zhang, Wenchang Yang, Xiaonan Zhengzhou University School of Electrical and Information Engineering Zhengzhou China The First Affiliated Hospital of Zhengzhou University Department of Gastroenterology Zhengzhou China Institute of Microelectronics of the Chinese Academy Key Laboratory of Microelectronic Devices and Integration Technology Beijing China

ISBN: (纸本)9781665455251

Microfluidic flow cytometry has the advantage of simple structure and easy sample handling, with a promising application for point-of-care testing. Long time imaging at low flow rates leads to inlet cell deposition and inaccurate counting. In this paper, we propose a three-dimensional inlet structure that can effectively reduce cell deposition and achieve a smaller dead zone area. First, the geometric design of the structure is presented and the flow path and dead zone distribution of the structure are analysed. Then, the design method and preparation process of the structure are described. In order to test the optimised performance of the structure, analytical experiments were carried out and cell counts were analysed and counted using image detection methods. The results show that the junction structure is able to assist in sample feeding and increase the cell throughput values by approximately 21%. © 2023 IEEE.

关键词： Cells

来源：评论

学校读者我要写书评

暂无评论

Influence Of B Ions Doping on the Performance of P-Type Silicon Nanowire Field Effect Transistor Biosensor

Influence Of B Ions Doping on the Performance of P-Type Sili...

引用

2022 China Semiconductor technology International Conference, CSTIC 2022

作者： Hu, Jiawei Zhang, Qingzhu Wei, Shuhua Zhang, Jing Zhang, Zhaohao Liu, Jin Biao Yan, Jiang School of Information Science and Technology North China University of Technology Beijing100144 China Key Laboratory of Microelectronic Devices and Integration Technology Chinese Academy of Sciences Institute of Microelectronics Beijing100029 China

ISBN: (数字)9781665497589

ISBN: (纸本)9781665497589

In this paper, the influence of different doping concentrations on the performance of p-type polycrystalline silicon nanowire (SiNW) field effect transistor biosensors was investigated. Silicon nanowire biosensors with different doping concentrations were botained by implanting B ions with various concentrations of 0, 1E13, 5E13, and 1E14 into the poly-silicon film. With the increase of the doping concentrations of B ions, the threshold voltage (Vth) of the SiNW biosensor moves to the positive direction. In addition, the switching ratios (Ion/Ioff) and the subthreshold swing (SS) is also significantly improved, the biosensor working in the subthreshold region has the best sensing sensitivity. © 2022 IEEE.

关键词： Field effect transistors

来源：评论

学校读者我要写书评

暂无评论

Gesture recognition algorithm combining ResNet and ShuffleNet

Gesture recognition algorithm combining ResNet and ShuffleNe...

引用

2021 International Conference on Internet of Things and Machine Learning, IoTML 2021

作者： Xie, Zhengjiang Lou, Li Jia, Kunpeng Jiao, Binbin School of Computing Xi'an Shiyou University Xi'an Shanxi710065 China Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

ISBN: (数字)9781510653269

ISBN: (纸本)9781510653252

Gesture is a form of non-verbal communication and has many applications, such as sign language communication between deaf and dumb people, robot control, human-computer interaction and medical applications. The commonly used acquisition equipment in gesture recognition is the visible light camera, but illumination has a great impact on the accuracy of the collected data classification processing. The whole project designed a complete end-to-end edge computing system design and deployment, the system can achieve from gesture image acquisition to gesture recognition. A dataset of 3600 thermal images was created, and each gesture had 1200 thermal images with only 4∗4 resolution. These images were upsampled by bilinear interpolation and fed into a new lightweight deep learning model combining deep residual learning with ShuffleNet V2 for gesture classification. The system achieved 98.63% accuracy on the test data set. Another advantage is that it is based on thermal imaging, so the accuracy is not affected by background lighting conditions. © SPIE.

关键词： Deep learning

来源：评论

学校读者我要写书评

暂无评论

Selective Wet-Etching of GESI in Multi-Layer GESI/SI Stacks

Selective Wet-Etching of GESI in Multi-Layer GESI/SI Stacks

引用

2022 China Semiconductor technology International Conference, CSTIC 2022

作者： Tian, Jiajia Cao, Zhijun Zhang, Qingzhu Wu, Cinan Zhang, Zhaohao Yin, Huaxiang College of Big Data and Information Engineering Guizhou University Guiyang 550025 China Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integration Technology Beijing100029 China

ISBN: (数字)9781665497589

ISBN: (纸本)9781665497589

In this paper, the channel release process of stacked gate-all-around (GAA) nanosheet (NS) devices fabricated based on the epitaxial scheme is investigated extensively. The effects of annealing temperatures, thicknesses of the GeSi layers and liquid nitrogen processing on the wet selective etching of GeSi in multi-layer GeSi/Si samples are mainly studied. It is found that the corrosion rate of the GeSi in GeSi/Si stacks samples first decreases and then increases with the increasement of rapid thermal annealing (RTA) temperatures, and the corrosion rate is the slowest at 600 ° C. In addition, the thicker the epitaxial GeSi, the faster the corrosion rate. Furthermore, we found that the corrosion rate of the samples after liquid nitrogen processing treatment was faster than that without treatment. The research provides a good reference significance for the design and manufacture of advanced stacked GAA Si NS devices. © 2022 IEEE.

关键词： Corrosion rate

来源：评论

学校读者我要写书评

暂无评论

Investigation of Vertically Stacked Horizontal Gate-All-Around SI Nanosheet Ion Sensitive Field Effect Transistor For Detection of C-Reactive Protein

Investigation of Vertically Stacked Horizontal Gate-All-Arou...

引用

2023 China Semiconductor technology International Conference, CSTIC 2023

作者： Liu, Yang Zhang, Qingzhu Li, Junjie Wu, Cinan Cao, Lei Luo, Yanna Zhang, Zhaohao Wei, Shuhua Wei, Qianhui Yao, Jiaxin Hu, Jiawei Qin, Meiyan Liu, Enxu Han, Yanchu Li, LianLian Li, YingLu Yang, Tao Zhou, Na Gao, Jianfeng Li, Junfeng Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integration Technology Beijing100029 China Guizhou University College of Big Data and Information Engineering Guiyang550025 China North China University of Technology School of Information Science and Technology Beijing100144 China State Key Laboratory of Advanced Materials for Smart Sensing Grinm Group Co. Ltd. Beijing100088 China

ISBN: (纸本)9798350311006

In this work, based on advanced gate-all-around (GAA) technology, the extended sensing gate (ESG) GAA Si nanosheet (SiNS) ion sensitive field effect transistor (ISFET) sensor was fabricated and reported for the first time. Due to the GAA structures and the vertically-stacked SiNS channels, the average sensitivity of the ESG GAA SiNS ISFET sensor can be reached 58.8 mV/pH, which provides good gate control and ultra-sensitive detection capabilities. In addition, the actual minimum detection concentration of C-reactive protein (CRP) by ESG GAA SiNS ISFET sensor in 1× PBS environment is as low as 100pg/mL, which is much lower than the normal concentration of human body. © 2023 IEEE.

关键词： Nanosheets

来源：评论

学校读者我要写书评

暂无评论

Fabrication and Performance Research of Silicon Nanosheet Field Effect Transistor Biosensor

Fabrication and Performance Research of Silicon Nanosheet Fi...

引用

2022 China Semiconductor technology International Conference, CSTIC 2022

作者： Xiong, Enyi Zhang, Zhaohao Zhang, Qingzhu Wei, Shuhua Wei, Qianhui Zhang, Jing Yan, Jiang School of Information Science and Technology North China University of Technology Beijing100144 China Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integration Technology Beijing100029 China State Key Laboratory of Advanced Materials for Smart Sensing Grinm Group Co. Ltd. Beijing100088 China

ISBN: (数字)9781665497589

ISBN: (纸本)9781665497589

Silicon nanowire (SiNW) FET biosensor has made great contributions to chemical and bio-molecular sensing, and is considered to be one of the best candidates for biosensors. However, due to high sensitivity to pH changes of the buffer solution when detecting biomolecules and low binding rate to biomolecules for small area, SiNW FET biosensor still has the problems of high variation and long response time. To solve the problems, In this paper, we investigate the sensing performances of silicon nanosheets (SiNS) FET with different areas, and found that SiNS FET biosensor with large areas can reduce the sensitivity to pH effectively, thus reducing the detection error caused by pH changes and improving sensing accuracy. In addition, by COMSOL simulating, we also found that devices with wide SiNS show higher bonding rate than that of SiNW devices at low analyte concentrations, thereby decreasing the responding time for high-speed detecting. © 2022 IEEE.

关键词： Nanosheets

来源：评论

学校读者我要写书评

暂无评论

F3: An FPGA-based Transformer Fine-tuning Accelerator with Flexible Floating Point Format

引用

IEEE Journal on Emerging and Selected Topics in Circuits and Systems 2025年

作者： He, Zerong Liu, Jing Jin, Xi Xu, Zhongguang Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Beijing100029 China University of Science and Technology of China School of Physical Science Anhui Hefei230022 China University of Science and Technology of China School of Microelectronics Anhui Hefei230026 China

Transformers have demonstrated remarkable success across various deep learning tasks. However, their inference and fine-tuning require substantial computation and memory resources, posing challenges for existing hardware platforms, particularly resource-constrained edge devices. To address these limitations, we propose F3, an FPGA-based accelerator for transformer fine-tuning. To reduce computation and memory overhead, this paper proposes a flexible floating point (FFP) format which consumes fewer resources than traditional floating-point formats of the same bitwidth. We adapt low-rank adaptation to FFP format and propose a fine-tuning strategy named LR-FFP which reduces the number of trainable parameters without compromising fine-tuning accuracy. At the hardware level, we design specialized processing elements (PEs) for the FFP format. The PE maximizes the utilization of DSP resources, enabling a single DSP to perform two multiply-accumulate operations per cycle. The PEs are organized into a systolic array (SA) to efficiently handle general matrix multiplication during fine-tuning. Through theoretical analysis and experimental evaluation, we determine the optimal dataflow and SA parameters to balance performance and resource consumption. We implement the architecture on the Xilinx VCU128 FPGA platform and F3 achieves a performance of 8.2 TFlops at 250 MHz. Compared with CPU and GPU implementations, F3 achieves speedups of 15.22× and 3.44×, respectively, and energy efficiency improvements of 70.52× and 9.44×. © 2011 IEEE.

关键词： Systolic arrays

来源：评论

学校读者我要写书评

暂无评论

Research on Kalman filter for one-dimensional discrete data

Research on Kalman filter for one-dimensional discrete data

引用

2021 International Conference on Information technology and Intelligent Control, CITIC 2021

作者： Wei, Fan Zhang, Zupei Jia, Kunpeng School of Computing Xi'an Shiyou University Shanxi Xi'an710065 China Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Kalman filter processes the input and observation signals with noise on the basis of linear state space representation to obtain the system state or real signal. In the one-dimensional model, due to the lack of multi-dimensional description of the target, the prior estimate of the state is often the measured value of the previous moment. When the target state changes, the divergence phenomenon will occur. Aiming at the problem that the one-dimensional traditional Kalman filter lacks the target observation dimension, which leads to the divergence or imprecision of the filter, this paper focuses on improving the estimation method of the target state, and proposes a real-time prediction model based on the cascade structure. This model can improve the response of Kalman filter to the change of target state and dynamically adjust the Kalman iterative domain to improve the measurement accuracy. The digital signal filtering simulation is carried out and the performance of the filter is verified based on LabVIEW. Experimental results show that the algorithm can maintain the accuracy and real-time performance of filtering when only one dimension observation results are obtained. © 2021 Institute of Physics Publishing. All rights reserved.

关键词： Kalman filters

来源：评论

学校读者我要写书评

暂无评论

Design of a Three-Dimensional Inlet Structure for Preventing Cell Deposition of Microfluidic Flow Cytometry

Design of a Three-Dimensional Inlet Structure for Preventing...

引用

International Symposium on Next-Generation Electronics (ISNE)

作者： Yu Hu Ya Li Xu Wang Ziqiang Du Wenchang Zhang Xiaonan Yang School of Electrical and Information Engineering Zhengzhou University Zhengzhou China Department of Gastroenterology The First Affiliated Hospital of Zhengzhou University Zhengzhou China Key Laboratory of microelectronic devices and integration technology Institute of Microelectronics of the Chinese Academy Beijing China

关键词：

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：