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检索条件"机构=Key Laboratory of Microelectronic Devices and Circuit"
21 条 记 录,以下是1-10 订阅
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An All-Neuron Spiking 2-D Path Integration and Map Representation Model Implemented on Neuromorphic Chips  16
An All-Neuron Spiking 2-D Path Integration and Map Represent...
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16th IEEE International Conference on Solid-State and Integrated circuit Technology, ICSICT 2022
作者: Liu, Kefei Cui, Xiaoxin Kuang, Yisong Zou, Chenglong Zhong, Yi Xiao, Kanglin Wang, Yuan Peking University Key Laboratory of Microelectronic Devices and Circuits Ministry of Education School of Integrated Circuits Beijing100871 China Peking University Beijing Laboratory of Future Integrated Circuit Technology and Science Beijing100871 China
Some specialized neurons have been found in mammalian brains, like grid cells, place cells, head direction cells and speed cells. These neurons form the positioning system in the brain. In this paper, we propose an al... 详细信息
来源: 评论
Experimental Investigation of Ultra-Low Temperature LA2O3/HFO2Bi-Layer Dipole-First Process Using PVD Method for Advanced IC Technology
Experimental Investigation of Ultra-Low Temperature LA2O3/HF...
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2023 China Semiconductor Technology International Conference, CSTIC 2023
作者: Wei, Yanzhao Yao, Jiaxin Xu, Renren Zhang, Qingzhu Yin, Huaxiang Chinese Academy of Sciences Integrated Circuit Advanced Process R&d Center Institute of Microelectronics Beijing100029 China Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integrated Technology Beijing100029 China University of Chinese Academy of Sciences School of Integrated Circuits Beijing100049 China
In this paper, a La2O3/HfO2 bi-layer dipole-first (DF) process is proposed and investigated by ultra-low temperature PVD dielectric laminates to achieve lower gate effective work function (EWF) for monolithic 3D-IC (M... 详细信息
来源: 评论
Unsupervised Learning of Spike-Timing-Dependent Plasticity Based on a Neuromorphic Implementation
Unsupervised Learning of Spike-Timing-Dependent Plasticity B...
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IEEE International Conference on Artificial Intelligence circuits and Systems (AICAS)
作者: Yi Zhong Zilin Wang Xiaoxin Cui Jian Cao Yuan Wang Key Laboratory of Microelectronic Devices and Circuits (MoE) MPW Center School of Integrated Circuits Peking University Beijing Laboratory of Future Integrated Circuit Technology and Science Peking University Beijing China
Spiking neural network is a promising endeavor to fulfill brain-like intelligence on the chip. Its learning rule, i.e., spike-timing-dependent plasticity (STDP), derived from neurobiology, is perceived as a powerful c...
来源: 评论
High-Performance PANI Sensor on Silicon Nanowire Arrays for Sub-ppb NH3 Detection
SSRN
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SSRN 2024年
作者: Wang, Zhehang Lan, Kuibo Wang, Zhi Wei, Junqing Chen, Ruibing Qin, Guoxuan Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology School of Microelectronics Tianjin University Tianjin300072 China School of Pharmaceutical Science and Technology Tianjin University Tianjin300072 China Tianjin Key Laboratory of Film Electronic & Communication Devices School of Integrated Circuit Science and Engineering Tianjin University of Technology Tianjin300384 China
For industrial production and disease diagnosis, real-time detection of low concentrations of NH3 is crucial, necessitating a gas-sensitive sensor compatible with integrated processes and exhibiting excellent performa... 详细信息
来源: 评论
Experimental Investigation of Ultra-Low Temperature LA2O3/HFO2 Bi-Layer Dipole-First Process Using PVD Method for Advanced IC Technology
Experimental Investigation of Ultra-Low Temperature LA2O3/HF...
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China Semiconductor Technology International Conference (CSTIC)
作者: Yanzhao Wei Jiaxin Yao Renren Xu Qingzhu Zhang Huaxiang Yin Integrated Circuit Advanced Process R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing China School of Integrated Circuits University of Chinese Academy of Sciences Beijing China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China
In this paper, a La 2 O 3 /HfO 2 bi-layer dipole-first (DF) process is proposed and investigated by ultra-low temperature PVD dielectric laminates to achieve lower gate effective work function (EWF) for monolithic 3D...
来源: 评论
Plasmon hybridization induced by quasi bound state in the continuum of graphene metasurfaces oriented for high-accuracy polarization-insensitive two-dimensional sensors
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Chinese Optics Letters 2022年 第4期20卷 65-70页
作者: Xiuyu Wang Jihong Xin Qun Ren Haocheng Cai Jiaqi Han Chengyi Tian Pengcheng Zhang Lijie Jiang Zhihao Lan Jianwei You Wei E.I.Sha Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology School of MicroelectronicsTianjin UniversityTianjin 300072China School of Electrical and Information Engineering Tianjin UniversityTianjin 300072China State Key Laboratory of Millimeter Waves School of Information Science and EngineeringSoutheast UniversityNanjing 210096China Key Laboratory of High Speed Circuit Design and EMC of Ministry of Education School of Electronic EngineeringXidian UniversityXi'an 710071China Huawei Technologies Company Ltd. Shanghai 518129China Department of Electronic and Electrical Engineering University College LondonLondon WC1E7JEUK Key Laboratory of Micro-Nano Electronic Devices and Smart Systems of Zhejiang Province College of Information Science and Electronic EngineeringZhejiang UniversityHangzhou 310027China
Plasmonics could provide compact and powerful solutions for manipulating light in deep-subwavelength dimensions,which is promising for a great range of nanophotonic technologies such as plasmonic rulers and ***,the ef... 详细信息
来源: 评论
Impact of gate length on the electrical characteristics of junctionless FDSOI strained SiGe channel p-FinFET
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Journal of Materials Science: Materials in Electronics 2025年 第15期36卷
作者: Lin, Hongxiao Miao, Yuanhao Ren, Yuhui Zhang, Yongkui Zhang, Qingzhu Xiong, Wenjuan Yu, Jiahan Zhao, Xuewei Liang, Renrong Xu, Jun Ye, Tianchun Radamson, Henry H. Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Research and Development Center of Optoelectronic Hybrid IC Guangdong Greater Bay Area Institute of Integrated Circuit and System Guangzhou510535 China School of Microelectronics University of Chinese Academy of Sciences Beijing100049 China School of Integrated Circuits Tsinghua University Beijing100086 China
In this work, we present the influence of structure design on the performance of novel fully depleted silicon-on-insulator (FDSOI) SiGe p-type FinFETs. The effects of Ge content, strain in the epitaxial SiGe channel a... 详细信息
来源: 评论
A novel strategy for GaN-on-diamond device with a high thermal boundary conductance
arXiv
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arXiv 2021年
作者: Mu, Fengwen Xu, Bin Wang, Xinhua Gao, Runhua Huang, Sen Wei, Ke Takeuchi, Kai Chen, Xiaojuan Yin, Haibo Wang, Dahai Yu, Jiahan Suga, Tadatomo Shiomi, Junichiro Liu, Xinyu High-Frequency High-Voltage Device and Integrated Circuits RandD Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Department of Mechanical Engineering The University of Tokyo Tokyo Bunkyo113-8656 Japan University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Collaborative Research Center Meisei University Tokyo Hino-shi191-8506 Japan Integrated Circuit Advanced Process RandD Center Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China
To achieve high device performance and high reliability for the gallium nitride (GaN)-based high electron mobility transistors (HEMTs), efficient heat dissipation is important but remains challenging. Enormous efforts... 详细信息
来源: 评论
Current Degradation and Delay Analysis of Series-Connected circuits Based on Novel TFET Design
Current Degradation and Delay Analysis of Series-Connected C...
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International Conference on Solid-State and Integrated circuit Technology
作者: Yuan Zhong Cheng Chen Qianqian Huang Zhixuan Wang Le Ye Jenchung Lou Ru Huang Institute of Integrated Circuit Engineering Peking University Beijing China Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing China
In this paper, for the first time, we investigate the circuit current degradation behavior in series-connected structures based on conventional Tunnel FET (TFET) and our proposed Multi-Finger Schottky-barrier TFET (MF... 详细信息
来源: 评论
Effect of Mo capping layers thickness on the perpendicular magnetic anisotropy in MgO/CoFeB based top magnetic tunnel junction structure
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Chinese Physics B 2016年 第11期25卷 558-562页
作者: 刘毅 朱开贵 钟汇才 朱正勇 于涛 马苏德 School of Physics and Nuclear Energy Engineering Beihang University Key Laboratory of Micro-nano Measurement-Manipulation and Physics Ministry of Education Beihang University Integrated Circuit Advanced Process Center Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences
A detailed study of the magnetic characterizations of the top structure MgO/CoFeB/Mo is *** samples show strong perpendicular magnetic anisotropy(PMA) when the thickness of CoFeB is 0.9 nm and 1.1 *** saturation mag... 详细信息
来源: 评论