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检索条件"机构=Key Laboratory of Microelectronic Devices and Circuits"
442 条 记 录,以下是1-10 订阅
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Physical investigation of subthreshold swing degradation behavior in negative capacitance FET
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Science China(Information Sciences) 2022年 第6期65卷 241-246页
作者: Mengxuan YANG Qianqian HUANG Kaifeng WANG Chang SU Liang CHEN Yangyuan WANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University Beijing Laboratory of Future IC Technology and Science Peking University
Power consumption has become one of the bottlenecks limiting the future development of integrated circuits. Tunnel FETs(TFETs) and negative capacitance FETs(NCFETs) can break the subthreshold swing limitation(60 mV/de... 详细信息
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Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors
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Science China(Information Sciences) 2022年 第6期65卷 277-278页
作者: Mengxuan YANG Qianqian HUANG Chang SU Liang CHEN Yangyuan WANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University Beijing Laboratory of Future IC Technology and Science Peking University
Dear editor,Recently, ferroelectric(FE)-based negative capacitance FET(NCFET) with ferroelectric/dielectric(FE/DE) gate stack has attracted extensive attention due to its capability of sub-60 mV/dec subthreshold swing... 详细信息
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A single-inductor thermoelectric, photovoltaic and vibration triplesource energy-harvesting power management system
A single-inductor thermoelectric, photovoltaic and vibration...
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2022 International Conference on Signal Processing and Communication Technology, SPCT 2022
作者: Liang, Zhanrong Wei, Baolin Xu, Weilin Wei, Xuming Gui, Fadi Li, Haiou Key Laboratory of Microelectronic Devices and Integrated Circuits Guilin University of Electronic Technology Guangxi Guilin541004 China
A single-inductor triple-source energy harvesting system that can harvest thermoelectric, photovoltaic and vibration energy was presented. With an integrated self-starting circuit, the system can self-supply while don... 详细信息
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Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET
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Science China(Information Sciences) 2021年 第2期64卷 271-272页
作者: Zhexuan REN Xia AN Gensong LI Xing ZHANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University
Dear editor,Strain technology has become a common solution in the semiconductor manufacturing industry since 90-nm technology node to overcome the severe carrier mobility degradation of nanoscale microelectronic devic... 详细信息
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A Depletion-enhanced N Layers Stacked LDMOS  3
A Depletion-enhanced N Layers Stacked LDMOS
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3rd International Symposium on Semiconductor and Electronic Technology, ISSET 2024
作者: Li, Qi Liang, Lanyi Guan, Li Dang, Tianbao Huang, Hong Chen, Yonghe Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin541004 China Key Laboratory of Microelectronic Devices and Integrated Circuits Navigation Department of Guangxi Zhuang Autonomous Region Guilin541004 China
With the development of power integrated circuits, LDMOS devices assume a significant role in power device applications due to their elevated input impedance and enhanced conversion rate. Nonetheless, a contradictory ... 详细信息
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Back Gate Controlled Pseudo-P-Channel GaN HFET  3
Back Gate Controlled Pseudo-P-Channel GaN HFET
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3rd International Symposium on Semiconductor and Electronic Technology, ISSET 2024
作者: Guan, Li Li, Qi Liang, Lanyi Wang, Lei Zhang, Xin Li, Haiou Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin541004 China Key Laboratory of Microelectronic Devices and Integrated Circuits Education Department of Guangxi Zhuang Autonomous Region Guilin541004 China
This paper proposes a novel pseudo-p-channel AlGaN/GaN heterostructure field-effect transistor (PP-HFET). As semiconductor technology advances, GaN devices are preferred for high-power and high-frequency applications ... 详细信息
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A 20-Gb/s Low Power Inductorless TIA Design in 0.18μm CMOS  6
A 20-Gb/s Low Power Inductorless TIA Design in 0.18μm CMOS
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6th International Conference on Electronic Engineering and Informatics, EEI 2024
作者: Zeng, Zhiwei Xu, Weilin Mo, Peisi Li, Haiou Key Laboratory of Microelectronic Devices and Integrated Circuits Guilin University of Electronic Technology Education Department of Guangxi Zhuang Autonomous Region Guilin China Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Applications Guilin China
The performance demands on transimpedance amplifiers (TIA) for optoelectronic conversion have increased with the rapid development of fiber optic communication technology. A modified feedforward common gate (MFCG) tra... 详细信息
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Low Power EEPROM Designed for Sensor Interface Circuit
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Chinese Journal of Electronics 2023年 第4期21卷 642-644页
作者: Xiangyun MENG Sen YANG Zhongjian CHEN Wengao LU Yacong ZHANG Jingqing HUANG Haojiong LI Weiguo SU Song LI Department of Microelectronics Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing China
EEPROM is an important part for interface circuit of sensor. It saves the calibration data and parameter setting data by non-volatile storage. A new low- power Erasable and electrically programmable read only memory (... 详细信息
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A centripetal collection image sensor(CCIS) based on back gate modulation achieving 1T submicron pixel
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Science China(Information Sciences) 2022年 第4期65卷 282-284页
作者: Liqiao LIU Guihai YU Gang DU Xiaoyan LIU Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University
Dear editor,Image sensors have been rapidly developed for decades and widely used in many different fields [1, 2]. To achieve high resolution, the pixel size has been scaled down to 1 μm for mass production [3]. Neve... 详细信息
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Experimental Demonstration of A CT-FeFET Array with Intrinsic Long-Short-Term Plasticity for Low-Cost Trajectory Prediction
Experimental Demonstration of A CT-FeFET Array with Intrinsi...
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2024 IEEE International Electron devices Meeting, IEDM 2024
作者: Li, Chao Yu, Jie Zhang, Xumeng Zhang, Zhaohao Zhu, Fangduo Ouyang, Siyuan Chen, Pei Cheng, Lingli Xu, Gaobo Zhang, Qingzhu Yin, Huaxiang Liu, Qi Liu, Ming State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai200438 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Key Laboratory of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Beijing100029 China
Trajectory prediction is a vital function in the auto-driving field, typically achieved with a long short-term memory network. Static IMC technology accelerates the computing of long-term parameters, while the executi...
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