检索结果-内蒙古大学图书馆

International Conference on ASIC

作者： Caidie Cheng Teng Zhang Chang Liu Jiadi Zhu Liying Xu Xiaoqin Yan Yuchao Yang Ru Huang State Key Laboratory for Advanced Metals and Materials School of Materials Science and Engineering University of Science and Technology Beijing Beijing China Key Laboratory of Microelectronic Devices and Circuits (MOE) Peking University Beijing China

Memristors are important building blocks for neuromorphic computing, which can be used to mimic the function of synapse in the human brain, manifesting the significance of the integration technology of the memriator array for building the neuromorphic computing systems. The main achievement of this work is the realization of the nanoscale neuromorphic memristor with low-power consumption and nanosecond respond time by applying electron beam lithography technology, which lays firm foundation for neuromorphic computing chips.

关键词：

来源：评论

学校读者我要写书评

暂无评论

High-Frequency Performance of MoS2 Transistors at Cryogenic Temperatures

High-Frequency Performance of MoS2 Transistors at Cryogenic ...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Qingguo Gao Chongfu Zhang Zhenfeng Zhang Zichuan Yi Xinjian Pan Feng Chi Liming Liu Xuefei Li Yanqing Wu School of Electronic Information University of Electronic Science and Technology of China Zhongshan Institute Zhongshan China Wuhan National High Magnetic Field Center and School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan China Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MOE) and Frontiers Science Center for Nano-optoelectronics Peking University Beijing China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

Recently, due to its potential in high-speed flexible electronics, radio-frequency transistors based on two-dimensional MoS 2 has attracted the interest of researchers. However, for the moment, little is known on the RF performance of MoS 2 transistors at cryogenic temperatures, which is important for evaluating performance limits of high-frequency MoS 2 devices. In this work, we report the RF performance of MoS 2 transistors at cryogenic temperatures based on chemical vapor deposited bilayer MoS 2 for the first time. As the temperature reduces, the higher cut-off frequency was achieved. At the liquid helium temperature, extrinsic and intrinsic fT of 5.7 and 12.7 GHz for the transistor with 300 nm gate-length were achieved. Furthermore, saturation velocity and intrinsic fmax of 2.4×10 6 cm/s and 24 GHz were obtained at 4.3 K, respectively. The revealed high-frequency performances of MoS 2 transistors at cryogenic temperatures are helpful to the advancement of MoS 2 high-frequency electronics.

关键词： Transistors Radio frequency Cryogenics Logic gates MOSFET Cutoff frequency Transconductance

来源：评论

学校读者我要写书评

暂无评论

Complementary Photo-Synapses: Complementary Photo-Synapses Based on Light-Stimulated Porphyrin-Coated Silicon Nanowires Field-Effect Transistors (LPSNFET) (Small 30/2021)

引用

Small 2021年第30期17卷

作者： Xiaokang Li Bocheng Yu Bowen Wang Ran Bi Haixia Li Kun Tu Gong Chen Zhihong Li Ru Huang Ming Li Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing 100871 China National Key Laboratory of Science and Technology on Micro/Nano Fabrication Institute of Microelectronics Peking University Beijing 100871 China Frontiers Science Center for Nano-optoelectronics Peking University Beijing 100871 China

来源：评论

学校读者我要写书评

暂无评论

Impact of Gate Asymmetry on Gate-All-Around Silicon Nanowire Transistor Parasitic Capacitance 14

Impact of Gate Asymmetry on Gate-All-Around Silicon Nanowire...

引用

14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018

作者： Dong, Xiaoqiao Yang, Yuancheng Chen, Gong Sun, Shuang Cai, Qifeng Li, Xiaokang An, Xia Xu, Xiaoyan Zhang, Wanrong Li, Ming Faculty of Information Technology Beijing University of Technology Beijing100124 China Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing100871 China

ISBN: (纸本)9781538644409

In this paper, an analytical model is developed for parasitic gate capacitance of the gate-all-around (GAA) silicon nanowire MOSFETs (SNWT) with asymmetrical top and bottom gates. The modeling results show that the gate-to-source/drain spacer significantly impacts on the parasitic capacitance especially in the case of top-to-bottom gate misalignment. It is found that the optimized top-to-bottom gate misalignment may achieve smaller Cp/Ctotal so as to improve the AC performance of GAA SNWT. The developed capacitance model is more suitable for the actual process for further device design optimization. © 2018 IEEE.

关键词： Nanowires

来源：评论

学校读者我要写书评

暂无评论

A novel strategy for GaN-on-diamond device with a high thermal boundary conductance

arXiv

引用

arXiv 2021年

作者： Mu, Fengwen Xu, Bin Wang, Xinhua Gao, Runhua Huang, Sen Wei, Ke Takeuchi, Kai Chen, Xiaojuan Yin, Haibo Wang, Dahai Yu, Jiahan Suga, Tadatomo Shiomi, Junichiro Liu, Xinyu High-Frequency High-Voltage Device and Integrated Circuits RandD Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Department of Mechanical Engineering The University of Tokyo Tokyo Bunkyo113-8656 Japan University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Collaborative Research Center Meisei University Tokyo Hino-shi191-8506 Japan Integrated Circuit Advanced Process RandD Center Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China

To achieve high device performance and high reliability for the gallium nitride (GaN)-based high electron mobility transistors (HEMTs), efficient heat dissipation is important but remains challenging. Enormous efforts have been made to transfer a GaN device layer onto a diamond substrate with a high thermal conductivity by bonding. In this work, two GaN-diamond bonded composites are prepared via modified surface activated bonding (SAB) at room temperature with silicon interlayers of different thicknesses (15 nm and 22 nm). Before and after post annealing process at 800 oC, thermal boundary conductance (TBC) across the bonded interface including the interlayer and the stress of GaN layer are investigated by time-domain thermoreflectance and Raman spectroscopy, respectively. After bonding, the 15 nm Si interlayer achieved a higher TBC. The post-annealing significantly increased the TBC of both interfaces, while the TBC of 22 nm silicon interlayer increased greater and became higher than that of 15 nm. Detailed investigation of the microstructure and composition of the interfaces were carried out to understand the difference in interfacial thermal conduction. The obtained stress was no more than 230 MPa for both before and after the annealing, and this high thermal stability of the bonded composites indicates that the room temperature bonding can realize a GaN-on-diamond template suitable for further epitaxial growth or device process. This work brings a novel strategy of SAB followed by high-temperature annealing to fabricate a GaN-on-diamond device with a high TBC. © 2021, CC BY.

关键词： Gallium nitride

来源：评论

学校读者我要写书评

暂无评论

High Performance Gigahertz Flexible Radio Frequency Transistors with Extreme Bending Conditions

High Performance Gigahertz Flexible Radio Frequency Transist...

引用

International Electron devices Meeting (IEDM)

作者： Mengfei Wang Mengchuan Tian Zhenfeng Zhang Shengman Li Runsheng Wang Chengru Gu Xiaoyu Shan Xiong Xiong Xuefei Li Ru Huang Yanqing Wu Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MoE) Peking University Beijing Wuhan National High Magnetic Field Center and School of Electrical and Electronic Engineering Huazhong University of Science and Technology Wuhan China

In this work, ultrathin indium tin oxide (ITO) radio frequency (RF) transistors have been demonstrated for the first time, where inverted gate structure are used with a flexible polyimide substrate using magnetron sputtering at a thermal budget below 200 °C. The 160 nm channel length device exhibits excellent DC characteristics, including mobility of 26 cm 2 /V·s and an I on /I off ratio of 6.6×10 8 . A record-high extrinsic cut-off frequency (f T ) of 2.1 GHz and an extrinsic maximum oscillation frequency (f max ) of 3.7 GHz have also been obtained, which are more than one order of magnitude higher than previous results on flexible substrate. A high conversion gain of -20.9 dB has been achieved for the gigahertz frequency mixer based on flexible ITO RF transistor. Moreover, the stability of DC and RF performance under different bending conditions up to 50,000 bending cycles or down to 1 mm bending radius are studied without device failure.

关键词：

来源：评论

学校读者我要写书评

暂无评论

High performance optoelectronics based on CVD Mos2

High performance optoelectronics based on CVD Mos2

引用

International Conference on ASIC

作者： Qianlan Hu Zhenfeng Zhang Yanqing Wu Wuhan National High Magnetic Field Center and School of Optical and Electronic Information Huazhong University of Science & Technology Wuhan China Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MoE) Peking University Beijing China

Transition metal dichalcogenides (TMDs) are regarded as promising nano materials for next generation electronics and optoelectronics due to their ultrathin body nature and excellent transport properties. Here, single crystal growth of monolayer Mos 2 has been realized by controllable atmosphere pressure chemical vapor deposition (APCVD) method. The high-quality of Mos 2 grown directly on SiO 2 /Si substrate has been demonstrated by various material characterization methods. The fabricated optoelectronic device shows prominent photoresponse within a broadband spectrum range and a wide optical power range by taking advantage of the Schottky contact at source/drain electrodes. As a result, high photoresponsivity of 3×10 4 A/W as well as high photodetectivity up to 7×10 12 Jones have been achieved.

关键词：

来源：评论

学校读者我要写书评

暂无评论

A novel SCR ESD protection structure for RF power amplifier

A novel SCR ESD protection structure for RF power amplifier

引用

China Semiconductor Technology International Conference (CSTIC)

作者： Chunguang Wang Zexue Liu Junhua Liu Huailin Liao Key Laboratory of Microelectronic Devices and Circuits (MOE) Peking University Beijing CHINA

In this paper, a novel silicon-controlled rectifier (SCR) structure is proposed to protect a radio-frequency (RF) power amplifier (PA) from electrostatic-discharge (ESD) damages. With a distinguished feature of an imbedded Deep N-well (DNW) area beneath the P-well/N-well regions, the novel SCR is demonstrated to be superior to the conventional SCR in terms of relatively low trigger voltage (13.3V) and high holding voltage (7 V). The new device can be realized in SMIC 0.18μm RF technology without requiring extra layout area. The operational mechanism of the new device structure is investigated, and the effect of the additional DNW region on the SCR's I-V characteristics is analyzed by TCAD simulation.

关键词： Electrostatic discharges Radio frequency Avalanche breakdown Junctions Power amplifiers Simulation Integrated circuits

来源：评论

学校读者我要写书评

暂无评论

Design and simulation of a novel multi-floating-gate synaptic nanowire transistor for neuromorphic computing

Design and simulation of a novel multi-floating-gate synapti...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Xiaokang Li Yuancheng Yang Gong Chen Shuang Sun Qifeng Cai Xiaoqiao Dong Xiaoyan Xu Xia An Ming Li Ru Huang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

In this paper, we proposed a novel multi-floating-gate synaptic nanowire transistor which can emulate synapses behaviors such as long-term potentiation (LTP), long-term depression (LTD), integration signals from multiple pre- synapses and successive synaptic weight modulation, it can also realize high density interconnection in current CMOS IC technology to build complex neural network. Meanwhile, a novel scheme was also proposed to simulate amplitude-adjustable function by properly controlling the polarity-gates. Therefore, the multiple synaptic behaviors can be realized by the proposed new device, making it a competitive candidate for neuromorphic systems.

关键词： Synapses Neuromorphics Nanobioscience Transistors Logic gates Mathematical model

来源：评论

学校读者我要写书评

暂无评论

ESD Robustness of Silicon Nanowire Transistor (SNWT) Combined with Thermal Analysis and Optimization

ESD Robustness of Silicon Nanowire Transistor (SNWT) Combine...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Ming Li Jiewen Fan Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

In this paper, self-heating model of SNWT is studied. For the first time, the excellent heat dissipation per channel width for SNWT is disclosed. The special 2D heat dissipation mode is believed to be the reason. Accordingly, a novel SNWT was proposed to improve the ESD robustness of gate-grounded SNWT with removal of buried oxide under gate. Experiments show the record failure current density of 18.8mA/μm with 5nm diameter. Provided highly uniform nanowire array fabrication capability, SNWT can also achieve high total failure current and ESD voltage.

关键词： Electrostatic discharges Logic gates Thermal resistance Heating systems Performance evaluation Robustness

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：