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Phonon-Limited Electron Mobility in Single-Layer MoS2

Chinese Physics Letters 2014年第2期31卷 101-104页

作者：曾琅辛争陈少闻杜刚康晋锋刘晓彦 Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 Yuanpei College Peking University Beijing 100871

The dynamics of electron transport in single-layer MoS2 is simulated by employing the single particle Monte Carlo method. Acoustic phonon scattering, optical phonon scattering and Frohlich scattering are taken into account. It is found that the electron mobility decreases from 806cm2 /V.s for a transverse electrical field of 103 Vim to 426/112 cm2 /V.s for a transverse electrical field of 105/107 Vim. Further detailed analysis on carrier dynamics reveals that the low field mobility is dominated by the acoustic phonon scattering while the role of optical phonon scattering is to relax the electron energy below the optical phonon energy by efficient energy relaxation through optical phonon emission. Only when the transverse electrical field is larger than 106 V/m, the mobility can be determined by the optical phonon scattering, leading to a strong mobility degradation.

关键词： PHONONS -- Scattering ELECTRON mobility ELECTRON transport ELECTRIC fields PHONON emissions ACOUSTIC phonons

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High temperature behavior of multi-region direct current current-voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal-oxide-semiconductor field-effect-transistors reliability

High temperature behavior of multi-region direct current cur...

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作者： He, Yandong Zhang, Ganggang Zhang, Xing Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing 100871 China

With the process compatibility with the mainstream standard complementary metal-oxide-semiconductor (CMOS), shallow trench isolation (STI) based laterally diffused metal-oxide-semiconductor (LDMOS) devices have become popular for its better tradeoff between breakdown voltage and performance, especially for smart power applications. A multi-region direct current current-voltage (MR-DCIV) technique with spectroscopic features was demonstrated to map the interface state generation in the channel, accumulation and STI drift regions. High temperature behavior of MR-DCIV spectroscopy was analyzed and a physical model was verified. Degradation of STI-based LDMOS transistors under high temperature reverse bias (HTRB) stress is experimentally studied by MR-DCIV spectroscopy. The impact of interface state location on device electrical characteristics was investigated. Our results show that the major contribution to HTRB degradation, in term of the on-resistance degradation, was attributed to interface state generation under STI drift region. © 2014 The Japan Society of Applied Physics.

关键词： Interface states

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Investigation of passivation of Ge substrate by N2O plasma and N2 plasma treatment

Investigation of passivation of Ge substrate by N2O plasma a...

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作者： Lin, M. Li, M. An, X. Yun, Q. Li, M. Li, Z. Liu, P. Zhang, B. Zhang, X. Huang, R. Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 China

ISBN: (纸本)9781607685395

In this paper, passivation of Ge substrates by N2O plasma is proposed and compared with a N2 plasma treatment. Results show that both N2O and N2 plasma treatments can improve the quality of the interface between the high K dielectric and the Ge substrate, as validated by the CV characteristics of MOS capacitors. Results show that, stoichiometric GeO2 is achieved by a N2O plasma oxidation and GeOxNy is formed by the N2 plasma treatment, due to a native oxide residue or oxidation after aqueous cleaning. Compared to GeOxNy passivation, a GeO2 passivation is superior in reducing the interface state density to ∼2 × 1011cm-2eV-1, suppressing EOT degradation and modulating the surface potential, which is promising for high performance Ge NMOSFETs fabrication. © 2014 The Electrochemical Society.

关键词： Passivation

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Formation energy study of oxygen vacancies in undoped, aluminum-doped and nitrogen-doped TaOx-based RRAM by first principle simulation

Formation energy study of oxygen vacancies in undoped, alumi...

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作者： Deng, Haopei Cai, Yimao Yu, Muxi Huang, Ru Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 China

ISBN: (纸本)9781607685395

Formation and transfer of oxygen vacancies are essential to transitional metal oxide RRAM's switching behavior. In this paper, first principle is used to simulate the formation energy of oxygen vacancies in undoped, Al-doped and N-doped TaOx based RRAM. In Al-doped TaOx, oxygen vacancies' formation energy is reduced significantly near the dopant atom. However, in N-doped TaOx, the formation energy of oxygen vacancies is slightly decreased compared with the undoped one. Our simulation results provide insight and guidance on the approach to improving RRAM's performance by doping atoms. © 2014 The Electrochemical Society.

关键词： RRAM

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The beat-frequency circuit for monitoring duty-cycle shift based on BTI effect 12

The beat-frequency circuit for monitoring duty-cycle shift b...

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2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

作者： Qiao, Fang He, Yandong Zhang, Ganggang Zhang, Xing Peking University Shenzhen Graduate School Shenzhen518055 China Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing100871 China

ISBN: (纸本)9781479932962

Circuit reliability issues have great attention to the researchers, especially bias temperature instability (BTI). Obviously, the threshold voltage of the device degraded when the MOS is in the stress mode. For CMOS digital circuits, duty cycle of the signal can shift. In this paper, the beat-frequency circuit design has been verified by the duty-cycle shift of buffer chain. The two ring oscillators (RO) with the same size as the comparison circuit, and the output as the beat frequency to measure the duty-cycle shift, where one is stressed, and the other is unstressed. We found that the duty-cycle increases as the stress time increases. The circuit is demonstrated by using the SMIC 65nm, 1.2V technology. © 2014 IEEE.

关键词： Threshold voltage

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Strain affected electronic properties of bilayer tungsten disulfide

Strain affected electronic properties of bilayer tungsten di...

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作者： Xin, Zheng Zeng, Lang Wang, Yijiao Wei, Kangliang Du, Gang Kang, Jinfeng Liu, Xiaoyan Peking University Shenzhen Graduate School Shenzhen 518055 China Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 China

The strain effect on the electronic properties of bilayer tungsten disulfide (WS2) is investigated by density functional theory (DFT). It is found that the band gap and carrier effective masses of AA and AB stacking bilayer WS2 decrease with increasing tensile strain. However, their band gap first increases under small compressive strain and then decreases with large compressive strain applied. These results can be explained by the interplay between the projected density of states contributed by the p-orbital of sulfur (S) atoms and those contributed by the d-orbital of tungsten (W) atoms. To measure this interaction quantitatively, a parameter N is proposed in our work. This work could serve as a guideline for the future manipulation of the electronic properties of WS2. © 2014 The Japan Society of Applied Physics.

关键词： Tungsten compounds

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A low power readout circuit for 640×512 IRFPA with dynamic windowing readout

A low power readout circuit for 640×512 IRFPA with dynamic ...

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2014 IEEE International Conference on Electron devices and Solid-State circuits, EDSSC 2014

作者： Zhou, Juanjuan Zhang, Yacong Lu, Wengao Chen, Zhongjian Fan, Miaomiao Wang, Guannan Ji, Lijiu School of Electronic and Computer Engineering Peking University Shenzhen Graduate School Shenzhen518055 China Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing100871 China

ISBN: (纸本)9781479923342

This paper presents a snapshot readout integrated circuit (ROIC) for 640×512 infrared focal plane array (IRFPA) with low power and multifunction design. Based on Gray code, flexible readout modes such as dynamic image transposition and dynamic windowing readout are realized. Current is automatically adjusted according to window size to reduce power. This IRFPA ROIC is designed in 0.35μm CMOS technology. © 2014 IEEE.

关键词： Timing circuits

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The beat-frequency circuit for monitoring duty-cycle shift based on BTI effect

The beat-frequency circuit for monitoring duty-cycle shift b...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Fang Qiao Yandong He Ganggang Zhang Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing China

ISBN: (纸本)9781479932849

关键词： Monitoring Abstracts Stress

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Design of low-power high-speed divide-by-2/3 prescalers with improved true single-phase clock scheme

Design of low-power high-speed divide-by-2/3 prescalers with...

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Asia-Pacific Conference on Microwave

作者： Song Jia Shilin Yan Yuan Wang Ganggang Zhang Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing China

New design improvement aiming to reduce the power consumption of true single-phase clock-based dual-modulus divide-by-2/3 prescalers is presented. The first latch stages of TSPC FFs are merged to reduce power and capacitance. Also, a pass transistor is introduced to cut off short circuit current. Hspice simulation of the proposed scheme in 40nm process demonstrates best power efficiency and power-delay-product among referenced designs. Besides, it shows comparable speed with extended TSPC prescalers.

关键词： microelectronics Laboratories Abstracts

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A low power readout circuit for 640×512 IRFPA with dynamic windowing readout

A low power readout circuit for 640×512 IRFPA with dynamic ...

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IEEE Conference on Electron devices and Solid-State circuits

作者： Juanjuan Zhou Yacong Zhang Wengao Lu Zhongjian Chen Miaomiao Fan Guannan Wang Lijiu Ji Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing China

ISBN: (纸本)9781479923366

关键词： CMOS process Photonic band gap

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