检索结果-内蒙古大学图书馆

arXiv 2023年

作者： Li, Guanghui Liu, Fengman Yang, Shengyi Liu, Jiang-Tao Li, Weimin Wu, Zhenhua School of Physics and Mechatronic Engineering Guizhou Minzu University Guiyang550025 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China School of Integrated Circuits University of CAS Beijing100049 China

The micro-electromechanical-system (MEMS) force and acceleration sensor utilizing the graphene-induced non-radiative transition was investigated. The graphene-induced non-radiative transition is very sensitive to the distance, and the deflection of the graphene ribbon is highly susceptive to applied force or acceleration. Thus, a high-sensitivity MEMS sensor can be achieved with detecting the graphene ribbon’s deflection of 1 nm, the force of 0.1 pN, and the acceleration of 0.1 mg. The MEMS sensor, with a size of only tens of microns, can be charged by light irradiation without connecting power sources. In addition, it allows long-distance detection, i.e., wireless transmitter circuit can be omitted. Therefore, it will have significant application prospects in the fields of micro-smart devices, wearable devices, biomedical systems, and so on. Copyright © 2023, The Authors. All rights reserved.

关键词： Graphene

来源：评论

学校读者我要写书评

暂无评论

Uniform, fast, and reliable CMOS compatible resistive switching memory

引用

Journal of Semiconductors 2022年第5期43卷 109-115页

作者： Yunxia Hao Ying Zhang Zuheng Wu Xumeng Zhang Tuo Shi Yongzhou Wang Jiaxue Zhu Rui Wang Yan Wang Qi Liu Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China School of Integrated Circuits Anhui UniversityHefei 230601China Frontier Institute of Chip and System Fudan UniversityShanghai 200433China

Resistive switching random access memory(RRAM) is considered as one of the potential candidates for next-generation memory. However, obtaining an RRAM device with comprehensively excellent performance, such as high retention and endurance, low variations, as well as CMOS compatibility, etc., is still an open question. In this work, we introduce an insert TaO_(x) layer into HfO_(x)-based RRAM to optimize the device performance. Attributing to robust filament formed in the TaO_(x) layer by a forming operation, the local-field and thermal enhanced effect and interface modulation has been implemented simultaneously. Consequently, the RRAM device features large windows(> 10^(3)), fast switching speed(-10 ns), steady retention(> 72h), high endurance(> 10^(8) cycles), and excellent uniformity of both cycle-to-cycle and device-to-device. These results indicate that inserting the TaO_(x) layer can significantly improve HfO_(x)-based device performance, providing a constructive approach for the practical application of RRAM.

关键词： uniformity resistance switching field enhance layer thermal enhance layer and interface modulation

来源：评论

学校读者我要写书评

暂无评论

Development of HSQ replacement gate process for silicon nanowire MOS devices

Development of HSQ replacement gate process for silicon nano...

引用

IEEE Electron devices Technology and Manufacturing Conference (EDTM)

作者： Kun Tu Xiaoqiao Dong Baotong Zhang Ru Huang Ming Li Peimin Lu Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China Fuzhou University Fuzhou China

In this paper, we have developed a replacement gate process with HSQ based on electron beam transmission exposure, which can simply and efficiently realize ideally symmetrical gate-all-around structure. HSQ replacement gate with intact morphology is successfully prepared on suspended nanowire arrays. With Si₃N₄ as the filling dielectric material, HSQ replacement gate is flattened by CMP and removed by hydrofluoric acid. Finally, the self-aligned and completely controllable poly-Si gate-all-around structure is realized successfully.

关键词： Electron beams Dielectric materials Morphology Logic gates Silicon Nanoscale devices Filling

来源：评论

学校读者我要写书评

暂无评论

A Low Noise 384×288 Uncooled Infrared Imager Based on Phase Difference Modulation

A Low Noise 384×288 Uncooled Infrared Imager Based on Phase...

引用

IEEE International Symposium on circuits and Systems (ISCAS)

作者： Xueyou Shi Shanzhe Yu Guangyi Chen Yacong Zhang Zhongjian Chen Wengao Lu Key Laboratory of Microelectronic Devices and Circuits Peking University China Peking University Information Technology Institute (Tianjin Binhai) China

ISBN: (纸本)9781728192017;9781728192024

This paper presents an uncooled infrared imager with flicker noise reduction, which is realized by the proposed phase difference modulation (PDM) method. The PDM method makes noise transfer function (NTF) generate a series of notches to reduce flicker noise. To realize PDM, a high-speed sub-frame readout circuit is proposed. The readout circuit has been manufactured and the output data is processed with FPGA. The measurement results show that the flicker noise power in the frequency range above 10Hz is reduced by 42% compared with traditional method at 60fps full image output rate, and the noise equivalent temperature difference (NETD) is reduced from 40mK to 34mK.

关键词： Temperature measurement Power measurement Phase modulation Transfer functions Frequency measurement Noise measurement 1f noise

来源：评论

学校读者我要写书评

暂无评论

Single-Electron Transistor Based on Cobalt Oxide

Single-Electron Transistor Based on Cobalt Oxide

引用

IEEE International Symposium on circuits and Systems

作者： Muchan Li Zhongzheng Tian Xuemin Yu Dacheng Yu Zhongyang Ren Liming Ren Yunyi Fu Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing P. R. China

In this paper, we propose and implement a single-electron transistor (SET) based on cobalt oxide for the first time. The SETs were fabricated through nanofabrication process compatible with the CMOS technology. A cobalt oxide (Co1-yO) on the surface of the source (S) and drain (D) Co electrodes is utilized to act as a quantum dot (QD). The diameter of QD is calculated to be 2.3 nm. The interface between Co1-yO and Co thin films (S/D electrodes) is used as tunneling junctions. The SET based on CoO exhibits typical single electron transport characteristics. Owing to the high Coulomb blockade energy (～180 meV), the Coulomb blockade regions still remain at room temperature (300 K), revealing the nanometer scale CoO-based SETs have great potential to operate at room temperature.

关键词： Electrodes Temperature Quantum dots Tunneling Cobalt Junctions Single electron transistors

来源：评论

学校读者我要写书评

暂无评论

Vertical‐organic‐nanocrystal‐arrays for crossbar memristors with tuning switching dynamics toward neuromorphic computing

引用

SmartMat 2021年第1期2卷 99-108页

作者： Fangxu Yang Lingjie Sun Qingxi Duan Huanli Dong Zhaokun Jing Yuchao Yang Rongjin Li Xiaotao Zhang Wenping Hu Leon Chua Key Laboratory of Molecular Optoelectronic Sciences School of ScienceTianjin UniversityTianjinChina Beijing National Research Center for Molecular Sciences Chinese Academy of SciencesBeijingChina Joint School of National University of Singapore and Tianjin University International Campus of Tianjin UniversityBinhai New CityFuzhouChina Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking UniversityBeijingChina Department of Electrical Engineering and Computer Sciences University of CaliforniaBerkeleyCaliforniaUSA

Memristors proposed by Leon Chua provide a new type of memory device for novel neuromorphic computing ***,the approaching of distinct multi‐intermediate states for tunable switching dynamics,the con-trolling of conducting filaments(CFs)toward high device repeatability and reproducibility,and the ability for large‐scale preparation devices,remain full of ***,we show that vertical‐organic‐nanocrystal‐arrays(VONAs)could make a way toward the *** perfect one‐dimensional structure of the VONAs could confine the CFs accurately with fine‐tune resistance states in a broad range of 103 *** availability of large‐area VONAs makes the fabrication of large‐area crossbar memristor arrays facilely,and the analog switching characteristic of the memristors is to effectively imitate different kinds of synaptic plasticity,indicating their great potential in future applications.

关键词： conducting filament memristor organic electronics organic single crystal

来源：评论

学校读者我要写书评

暂无评论

Experimental Investigation of Ultra-Low Temperature LA2O3/HFO2 Bi-Layer Dipole-First Process Using PVD Method for Advanced IC Technology

Experimental Investigation of Ultra-Low Temperature LA2O3/HF...

引用

China Semiconductor Technology International Conference (CSTIC)

作者： Yanzhao Wei Jiaxin Yao Renren Xu Qingzhu Zhang Huaxiang Yin Integrated Circuit Advanced Process R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing China School of Integrated Circuits University of Chinese Academy of Sciences Beijing China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

In this paper, a La 2 O 3 /HfO 2 bi-layer dipole-first (DF) process is proposed and investigated by ultra-low temperature PVD dielectric laminates to achieve lower gate effective work function (EWF) for monolithic 3D-IC (M3D) application. The impacts of ultra-low temperature La-dipole on EWF modulation and interfacial properties are comprehensively investigated. It is found that the flat-band voltage (V FB ) negatively shifts 60 mV with sub-1nm La 2 O 3 thickness, which provides an effective way to meet the require of Si conduction band-edge EWF modulation. Furthermore, the electron trap/detrap densities (Not) and interfacial trap densities (Dit) are suppressed by La 2 O 3 /HfO 2 bi-layer DF process to improve device performance. These results exhibit a promising bi-layer DF process in low thermal integration for advanced IC technology.

关键词：

来源：评论

学校读者我要写书评

暂无评论

A High Dynamic Range Pixel Circuit with High-voltage Protection for 128×128 Linear-mode APD Array

A High Dynamic Range Pixel Circuit with High-voltage Protect...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Yuting Gu Wengao Lu Yuze Niu Yacong Zhang Zhongjian Chen Key Laboratory of Microelectronic Devices and Circuits Peking University

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

This paper presents a high dynamic range pixel circuit with high-voltage protection for 128×128 Linear-mode avalanche photodiode (LM-APD) array. The pixel circuit includes a high-voltage transistor, a pixel-level analog-to-digital converter (ADC), and a high-voltage protection circuit based on circuit-shared. Through circuit-shared, the pixel-level A/D conversion and high-voltage protection are completed efficiently. Meanwhile, the dynamic range of the entire circuit is greatly improved. The chip is designed in 0.18μm CMOS process. The frame rate is 100Hz and the resolution is 16bit. The simulation results indicate that the dynamic range is 94dB and the power consumption is 5μW per pixel. The pixel pitch is 100μm, which can be reduced further with smaller APD detector.

关键词： Avalanche photodiodes Dynamic range Detectors Transistors Power demand Analog-digital conversion Simulation

来源：评论

学校读者我要写书评

暂无评论

A Design of Four Dies Parallel NAND Flash Memory Controller Supporting Toggle and ONFI mode 15

A Design of Four Dies Parallel NAND Flash Memory Controller ...

引用

15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020

作者： Huang, Qin Wang, Zilin Lu, Wengao School of Software and Microelectronics Peking University Beijing102600 China Key Laboratory of Microelectronic Devices and Circuits Peking University Department of Microelectronics Beijing100871 China

ISBN: (纸本)9781728162355

The data access speed is an important index of the NAND Flash memory. This paper proposes a new structure which can implement high-speed data storage. One important feature of the controller is that one controller can operate four dies of NAND Flash memory at the same time. It improves the speed of data access effectively. The other important feature is that the controller can support both of the Toggle mode and ONFI mode. DDR protocol can achieve high rapid speed of storage. This design is attached to SOC system as AHB slave. The verification results demonstrate that this designed controller can correctly control NAND Flash memory to read, page program, reset, read ID, read status and block erase. The experimental results based on FPGA demonstrate that the speed of page program is 105.2MB/s. The read/write speed of the four dies parallel controller is 4 times better than the traditional controller. © 2020 IEEE.

关键词： Controllers

来源：评论

学校读者我要写书评

暂无评论

A Low Power High Linearity Cryogenic Readout Integrated Circuit with Large Charge Handling Capacity for $10\mu\mathrm{m}$ Pitch $640\times 512$ Infrared Focal Plane Array

A Low Power High Linearity Cryogenic Readout Integrated Circ...

引用

International Conference on Integrated circuits and Microsystems (ICICM)

作者： Zhiqiang Lu Yuze Niu Zhongjian Chen Bowei An Yacong Zhang Wengao Lu Key Laboratory of Microelectronic Devices and Circuits Beijing China

ISBN: (数字)9781728189789

ISBN: (纸本)9781728189796

This paper presents a low power cryogenic readout integrated circuit(ROIC) with large charge handling capacity for 640×512 infrared focal plane array(IRFPA). An innovative structure using two-stage cascaded source followers in output buffer circuit is proposed to reduce the power consumption of the readout integrated circuit and ensure high linearity of the output voltage. Besides, the area of the integration capacitor in pixel array is maintained as large as possible to ensure large charge handling capacity through a special-shape layout structure. The readout integrated circuit implements frame rate of 100Hz, charge handling capacity of 7.28Me - , nonlinearity of 0.87 0 / 00 and power consumption of 61mW with 4×10MHz output rate when the integration mode is integration while reading(IWR).

关键词： Power demand Capacitors microelectronics Linearity Layout Integrated circuits MOS capacitors

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：