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Efficient 16 Boolean logic and arithmetic based on bipolar oxide memristors

Science China(Information Sciences) 2020年第10期63卷 203-210页

作者： Rui YUAN Mingyuan MA Liying XU Zhenhua ZHU Qingxi DUAN Teng ZHANG Yu ZHU Yu WANG Ru HUANG Yuchao YANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Department of Micro/NanoelectronicsPeking University Department of Electronic Engineering Beijing National Research Center for Information Science and TechnologyTsinghua University Center for Brain Inspired Chips Academy for Artificial IntelligencePeking University Frontiers Science Center for Nano-optoelectronics Peking University

The physically separated memory and logic units in traditional von Neumann computers place essential limits on the performance and cause increased energy consumption, and hence in-memory computing is required to overcome this bottleneck. Here, a new bipolar memristor based in-memory logic approach is proposed, which is capable of achieving all 16 possible Boolean logic functions in a single device in less than3 steps. This approach does not require initialization and can facilitate logic cascading, and the calculation taking place in-situ is showcased by 1-bit full adder and 2-bit multiplier with improved efficiency, thus showing a great prospect in future in-memory computing architecture.

关键词： memristor nonvolatile logic in-memory computing full adder multiplier

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Direct Cu-polyimide Bonding Achieved by Surface Activation and Pt-catalyzed Formic Acid Atmosphere

Direct Cu-polyimide Bonding Achieved by Surface Activation a...

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2021 IEEE International Conference on Integrated circuits, Technologies and Applications, ICTA 2021

作者： Meng, Ying Gao, Runhua Wang, Xinhua Chen, Xiaojuan Huang, Sen Wei, Ke Wang, Dahai Mu, Fengwen Liu, Xinyu Chinese Academy of Sciences High-Frequency High-Voltage Device and Integrated Circuits RD Center Institute of Microelectronics Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9781665417471

Recent flexible printed circuit applications of high-frequency wireless communication systems require thicker metal layers on substrates for lower ohmic losses. In this paper, a Cu layer over 50-micron thick was directly generated on the polyimide substrate by heterogeneous bonding method without interlayer. The polyimide was first sputtered a 200 nm-thick Cu layer, and then was activated by oxygen plasma to improve its hydrophilicity and achieve direct adhesion between polyimide and nanoscale Cu deposition, and eventually was bonded with a 50micron-thick Cu foil in a Pt-catalyzed formic acid atmosphere by thermo-compression. The effectiveness of this method was verified by comparing bonding interfaces, shear strength, and fracture modes of bonded samples with and without a Cr interlayer. This method provides a new idea for the integration of heterogeneous materials needed in wearable products and flexible printed circuits. © 2021 IEEE.

关键词： Formic acid

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Suppression of Bulk Traps in Al2o3 Gate Dielectric and its Effect on Threshold Voltage Instability in Al2o3/Algan/Gan Metal-Oxide-Semiconductor High Electron Mobility Transistors

SSRN

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SSRN 2023年

作者： Deng, Kexin Huang, Sen Wang, Xinhua Jiang, Qimeng Yin, Haibo Fan, Jie Jing, Guanjun Wei, Ke Zheng, Yingkui Shi, Jingyuan Liu, Xinyu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Bulk trapping and its effects on threshold voltage hysteresis (ΔVTH) in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) are researched through isothermal capture transient spectroscopy. A post deposition annealing (PDA) at 500 ℃ in the O2 ambient is confirmed to be an effective way to reduce the bulk traps in the atomic layer deposited (ALD)-Al2O3 film as it contributes to the suppressed ΔVTH in Al2O3/AlGaN/GaN MOS-HEMTs. Isothermal-mode capacitance deep level transient spectroscopy (C-DLTS) is utilized to investigate the threshold voltage instability in Al2O3/AlGaN/GaN MOS-HEMTs. The evolution of the C-DLTS signals verifies the continual charging of oxide bulk traps in the Al2O3 gate dielectric once the gate bias of the MOS-HEMTs is applied exceeding +3 V, which leads to the degraded ΔVTH as well as subthreshold slopes in transfer characterization. Such traps probably stem from the Al-O-H component in as-deposited Al2O3 layers, as detected by X-ray photoelectron spectroscopy (XPS) analysis. Energy band simulation further illustrates the capture process of the oxide bulk traps, verifying the physical relationship between bulk-trapping and ΔVTH. © 2023, The Authors. All rights reserved.

关键词： Gallium nitride

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A 16bit 1MS/s High-Bit Sampling SAR ADC with Improved Binary-Weighted Capacitive Array

A 16bit 1MS/s High-Bit Sampling SAR ADC with Improved Binary...

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International Conference on Integrated circuits and Microsystems (ICICM)

作者： Bowei An Shoudong Huang Zhongjian Chen Zhiqiang Lu Wengao Lu Yacong Zhang Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing China

ISBN: (数字)9781728189789

ISBN: (纸本)9781728189796

This paper presents a 16-bit 1MS/s successive approximation register (SAR) analog-to-digital converters (ADC) for precision measurement in 180nm technology. High-bit sampling makes the bridge capacitor become unit capacitance, which solves the problem of fractional capacitor mismatch. In addition, thermometer-coded capacitors are used to improve linearity. The prototype achieves 104.3dB spurious-free dynamic range (SFDR) at 3.9kHz input signal while operating at sampling rate of 1 MS/s and the power consumption is 7.85 mW.

关键词： Capacitors microelectronics Thermometers Linearity Bridge circuits Latches Encoding

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Nanofabrication beyond optical diffraction limit: Optical driven assembly enabled by superlubricity

arXiv

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arXiv 2024年

作者： Jiang-Tao, Liu Peng, Deli Yang, Qin Liu, Ze Wu, Zhenhua College of Physics and Mechatronic Engineering Guizhou Minzu University Guiyang550025 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Institute of Superlubricity Technology Research Institute of Tsinghua University in Shenzhen Shenzhen518057 China Department of Engineering Mechanics Tsinghua University Beijing100084 China School of Integrated Circuits University of CAS Beijing100049 China

The optical manipulation of nanoparticles on superlubricity surfaces is investigated. The research revealed that, due to the near-zero static friction and extremely low dynamic friction at superlubricity interfaces, the maximum intensity for controlling the optical field can be less than 100 W/cm2, which is nine orders of magnitude lower than controlling nanoparticles on traditional interfaces. The controlled nanoparticle radius can be as small as 5 nm, which is more than one order of magnitude smaller than nanoparticles controlled through traditional optical manipulation. Manipulation can be achieved in sub-microsecond to microsecond timescales. Furthermore, the manipulation takes place on solid surfaces and in non-liquid environments, with minimal impact from Brownian motion. By appropriately increasing dynamic friction, controlling light intensity, or reducing pressure, the effects of Brownian motion can be eliminated, allowing for the construction of microstructures with a size as small as 1/75 of the wavelength of light. This enables the control of super-resolution optical microstructures. The optical super-resolution manipulation of nanoparticles on superlubricity surfaces will find important applications in fields such as nanofabrication, photolithography, optical metasurface, and biochemical analysis. © 2024, CC BY.

关键词： Nanoparticles

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Hf1-xZrxO2based bipolar selector with high uniformity and high selectivity for large-scale integration of memristor crossbars

Hf1-xZrxO2based bipolar selector with high uniformity and hi...

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IEEE Electron devices Technology and Manufacturing Conference (EDTM)

作者： Caidie Cheng Keqin Liu Bingjie Dang Living Xu Zhen Yang Xiaoqin Yan Yuchao Yang Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Peking University Beijing China State Key Laboratory for Advanced Metals and Materials School of Materials Science and Engineering University of Science and Technology Beijing Beijing China

ISBN: (纸本)9781728181769;9781728181776

The sneak path problem is a main limitation that affects the scale of the memristor crossbar array and hence its practical applications in memory and computing. Here, a bipolar, highly nonlinear selector based on Hf_1-xZr_xO₂ (HZO) was fabricated, which exhibits remarkable performance, including high selectivity of >10⁶, robust endurance of >10⁷, off-state current of ~pA and excellent uniformity, making it attractive for future high-density memristor crossbar arrays.

关键词： Neuromorphic engineering Memristors Switches Large scale integration Manufacturing Leakage currents

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In-memory computing with emerging nonvolatile memory devices

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Science China(Information Sciences) 2021年第12期64卷 23-68页

作者： Caidie CHENG Pek Jun TIW Yimao CAI Xiaoqin YAN Yuchao YANG Ru HUANG State Key Laboratory for Advanced Metals and Materials School of Materials Science and EngineeringUniversity of Science and Technology Beijing Key Laboratory of Microelectronic Devices and Circuits (MOE) Department of Micro/nanoelectronicsPeking University Center for Brain Inspired Chips Institute for Artificial IntelligencePeking University Center for Brain Inspired Intelligence Chinese Institute for Brain Research (CIBR)

The von Neumann bottleneck and memory wall have posed fundamental limitations in latency and energy consumption of modern computers based on von Neumann architecture. In-memory computing represents a radical shift in the computer architecture that can address such problems by merging computing functions within the memory itself. In this article, we review the emerging nonvolatile memory devices,such as resistance-based and charge-based memory devices, that are explored for in-memory computing applications. We will provide an overview of the materials, mechanisms, and integration of these devices,and discuss the optimizations at the device and array levels that are required to better support in-memory computing. Recent progress in the application of in-memory computing in artificial neural networks, spiking neural networks, digital logic in memory as well as hardware security will also be discussed. Finally, we will discuss the remaining challenges in this field and potential pathways to address them.

关键词： in-memory computing von Neumann bottleneck nonvolatile memory energy efficiency neural network

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A Systematic Characterization Method for Time-resolved Stability and Reliability Issues on Lateral GaN Power devices

A Systematic Characterization Method for Time-resolved Stabi...

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International Symposium on Power Semiconductor devices and Ics (ISPSD)

作者： Yifei Huang Qimeng Jiang Sen Huang Xinyu Liu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of the Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Beijing China Institute of Microelectronics University of Chinese Academy of Sciences Beijing China

In this work, three testing modes, including continuous hard switching testing (HSW), high-voltage DC stress testing (DC) and recovery testing (RE), are implemented to characterize time-resolved dynamic $R_{\text{ON}}$ behaviors of GaN HEMT devices, based on the inductive-load evaluation platform. The proposed stressing pattern (DC-HSW-DC-RE) enables the separation of de-stress- and transient-stress-induced dynamic $R_{\text{ON}}$ . Based on the stressing pattern, a novel physical-based characterization method is proposed to identify the irreversible degradation of dynamic $R_{\text{ON}}$ , featuring excellent sensitivity when compared with the traditional methods. In addition, lifetime acceleration experiments are carried out, and the irreversible $R_{\text{ON}}$ degradation exhibits a strong dependence on voltage and current, but a weak dependence on temperature.

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Rectangular suspended single crystal Si nanowire with (001) planes and <001> direction developed via TMAH wet chemical etching

Rectangular suspended single crystal Si nanowire with (001) ...

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China Semiconductor Technology International Conference (CSTIC)

作者： Shuang Sun Baotong Zhang Yuancheng Yang Xia An Xiaoyan Xu Ru Huang Ming Li Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

In this study, a kind of rectangular suspended single crystal Si nanowire with (001) planes and along direction is developed via a CMOS-compatible top-down scheme. In this scheme, the nanowires are formed by anisotropic etching of TMAH on different silicon crystallography orientations. By designing the initial orientations of hard mask patterns, the rectangular suspended silicon nanowires can be successfully fabricated without any sacrificial epitaxial layers. Due to the damage-free process and the high mobility on (001) planes, this scheme will provide a high-quality channel for the future gate-alI-around silicon transistor technology.

关键词： Epitaxial layers Logic gates Silicon Etching Transistors Crystallography Chemicals

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A Novel High-Endurance FeFET Memory Device Based on ZrO2 Anti-Ferroelectric and IGZO Channel

A Novel High-Endurance FeFET Memory Device Based on ZrO2 Ant...

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International Electron devices Meeting (IEDM)

作者： Zhongxin Liang Kechao Tang Junchen Dong Qijun Li Yuejia Zhou Runteng Zhu Yanqing Wu Dedong Han Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) School of Integrated Circuits Peking University Beijing China Wuhan National High Magnetic Field Center and School of Optical and Electronic Information HuazhongUniversity of Science and Technology Wuhan China

ISBN: (纸本)9781665425735

We successfully developed a high-performance FeFET memory device by integrating ZrO 2 anti-ferroelectric with IGZO channel for the first time. The replacement of conventional HfO 2 ferroelectric by anti-ferroelectric ZrO 2 effectively reduces the coercive field and boosts endurance. Furthermore, the IGZO channel allows for an interlayer free gate stack that lowers the working voltage and enhances retention compared to Si channel. The novel FeFET demonstrates a high endurance up to 10 9 cycles, a good retention of > 10 years, and a low working voltage of 2 V, greatly empowering the device for future embedded memory with ultra-low energy consumption.

关键词： Electrodes Pulse measurements Nonvolatile memory Capacitance-voltage characteristics Current measurement Crystallization Logic gates

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