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International Electron devices Meeting (IEDM)

作者： Shijie Huang Zhenghua Wu Haoqing Xu Jingrui Guo Lihua Xu XinLv Duan Qian Chen Guanhua Yang Qingzhu Zhang Huaxiang Yin Lingfei Wang Ling Li Ming Liu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China Advanced Integrated Circuits R&D Center Institute of Microelectronic of the Chinese Academy of Sciences Beijing China

Quantum-corrected quasi-ballistic compact model is developed for Stacked Silicon Nanosheet (SiNS) Gate-all-around (GAA) FETs. Theories of Density-Gradient-Poisson (DG-P), Singular perturbation and quasi-ballistic to interpret quantum mechanicals on density profile and charge transport are employed in analytical expressions of current, terminal charge and trans-capacitance. Besides, the model incorporates ultra-scaling induced subthreshold degradation and is rigidly verified by comparing to 6-nm-thick-SiNS based experiments (of both ${P-}$ and $N$ -GAAFET) and GTS simulations (of down to 15 nm channel length). Instead of classical Schrodinger-Poisson theory, it holds features of computation-efficiency and SPICE-compatibility. Especially, awareness of geometric variability enables performance and reliability assessments that statistical effects of stacked nanosheets on on-state voltage are predicted. Hence, this high-efficient quantum corrected model is promising in designing integrated circuits and developing a geometry aware design-technology co-optimization flow in the next generation technology node.

关键词： Electric potential Simulation Field effect transistors Gallium arsenide Logic gates Mathematical models Silicon

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Adaptive Random Number Generator Based on RRAM Intrinsic Fluctuation for Reinforcement Learning

Adaptive Random Number Generator Based on RRAM Intrinsic Flu...

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International Symposium on VLSI Technology, Systems and Applications

作者： Lin Bao Zongwei Wang Zhizhen Yu Yichen Fang Yuchao Yang Yimao Cai Ru Huang Institute of Microelectronics Peking University Beijing China Key Laboratory of Microelectronic Devices and Circuits (MOE) Peking University Beijing China

ISBN: (数字)9781728142326

ISBN: (纸本)9781728142333

In this work, a novel random number generator with adjustable adaptability is demonstrated based on the intrinsic fluctuation of resistive random access memory (RRAM). Experimental data shows the standard deviation of resistance state has a negative dependence on compliance current (CC), thus an adaptive random number generator (ARNG) can be realized by controlling the CC in RRAM set process. Benchmarking results show that the RRAM based ARNG can achieve same performance compared with software ARNG in reinforcement learning process of zebra finch's singing pattern.

关键词： Resistance Learning (artificial intelligence) Fluctuations Generators Standards Software Random access memory

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High-Speed Trace Detection DROIC for 15μm-Pitch Cryogenic Infrared FPAs

High-Speed Trace Detection DROIC for 15μm-Pitch Cryogenic I...

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IEEE International Symposium on circuits and Systems (ISCAS)

作者： Yuze Niu Yajun Zhu Wengao Lu Zhaofeng Huang Yuting Gu Yacong Zhang Zhongjian Chen Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University China Peking University information technology institute (Tianjin Binhai) China

ISBN: (数字)9781728133201

ISBN: (纸本)9781728133218

This paper introduces a digital readout integrated circuit (DROIC) for 320×256 target-tracking infrared focal plane arrays(IRFPAs). The circuit is based on a two-stage ADC, which implements 10-bit coarse quantization and 4-bit fine quantization, enabling high frame frequency trace detection. In addition, the locating and independent output of sensitive pixels are realized by a scanning function, which greatly reduces output frequency and power consumption. The proposed ROIC of 15μm pixel-pitch is fabricated using 55nm 1P6M CMOS process. The pixel circuit consumes 379nW. Frame frequency of the target-tracking mode is 1 kHz, the two-stage ADC has a nonlinearity of 0.06%.

关键词： Quantization (signal) Capacitors Array signal processing Power demand Imaging Detectors Integrated circuits

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Improvement of thermal stability of nickel germanide using nitrogen plasma pretreatment for germanium-based technology

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Science China(Information Sciences) 2018年第10期61卷 285-287页

作者： Bingxin ZHANG Xia AN Pengqiang LIU Xiangyang HU Ming LI Xing ZHANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

Dear editor,Ge has been considered as a very promising candidate as a channel material of MOSFET to extend Moore’s law beyond sub-7 nm node, due to its high and symmetric mobility, as well as the compatibility with conventional Si process [1, 2].In spite of higher carrier mobility than Si, there are still several challenges for Ge MOSFETs, such as low electrical concentration of n-type dopants and high electron Schottky barrier height, resulting in large source/drain (S/D) series resistance.

关键词： Improvement of thermal stability of nickel germanide using nitrogen plasma pretreatment for germanium-based technology NPP Ni

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Efficient and accurate neural field reconstruction using resistive memory

arXiv

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arXiv 2024年

作者： Yu, Yifei Wang, Shaocong Zhang, Woyu Zhang, Xinyuan Wu, Xiuzhe He, Yangu Yang, Jichang Zhang, Yue Lin, Ning Wang, Bo Chen, Xi Wang, Songqi Zhang, Xumeng Qi, Xiaojuan Wang, Zhongrui Shang, Dashan Liu, Qi Cheng, Kwang-Ting Liu, Ming Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong Hong Kong ACCESS – AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong Hong Kong Institute of Mind The University of Hong Kong Hong Kong Hong Kong Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Frontier Institute of Chip and System Fudan University Shanghai200433 China Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Hong Kong Hong Kong

Human beings construct perception of space by integrating sparse observations into massively interconnected synapses and neurons, offering a superior parallelism and efficiency. Replicating this capability in AI finds wide applications in medical imaging, AR/VR, and embodied AI, where input data is often sparse and computing resources are limited. However, traditional signal reconstruction methods on digital computers face both software and hardware challenges. On the software front, difficulties arise from storage inefficiencies in conventional explicit signal representation. Hardware obstacles include the von Neumann bottleneck, which limits data transfer between the CPU and memory, and the limitations of CMOS circuits in supporting parallel processing. We propose a systematic approach with software-hardware co-optimizations for signal reconstruction from sparse inputs. Software-wise, we employ neural field to implicitly represent signals via neural networks, which is further compressed using low-rank decomposition and structured pruning. Hardware-wise, we design a resistive memory-based computing-in-memory (CIM) platform, featuring a Gaussian Encoder (GE) and an MLP Processing Engine (PE). The GE harnesses the intrinsic stochasticity of resistive memory for efficient input encoding, while the PE achieves precise weight mapping through a Hardware-Aware Quantization (HAQ) circuit. We demonstrate the system’s efficacy on a 40nm 256Kb resistive memory-based in-memory computing macro, achieving 31.5×, 35.5×, and 47.2× energy efficiency improvements and 10.8×, 38.8×, and 6.2× parallelism improvements without compromising reconstruction quality in tasks like 3D CT sparse reconstruction, novel view synthesis, and novel view synthesis for dynamic scenes. This work advances the AI-driven signal restoration technology and paves the way for future efficient and robust medical AI and 3D vision applications. Copyright © 2024, The Authors. All rights reserved.

关键词： Signal reconstruction

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Plasmon hybridization induced by quasi bound state in the continuum of graphene metasurfaces oriented for high-accuracy polarization-insensitive two-dimensional sensors

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Chinese Optics Letters 2022年第4期20卷 65-70页

作者： Xiuyu Wang Jihong Xin Qun Ren Haocheng Cai Jiaqi Han Chengyi Tian Pengcheng Zhang Lijie Jiang Zhihao Lan Jianwei You Wei E.I.Sha Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology School of MicroelectronicsTianjin UniversityTianjin 300072China School of Electrical and Information Engineering Tianjin UniversityTianjin 300072China State Key Laboratory of Millimeter Waves School of Information Science and EngineeringSoutheast UniversityNanjing 210096China Key Laboratory of High Speed Circuit Design and EMC of Ministry of Education School of Electronic EngineeringXidian UniversityXi'an 710071China Huawei Technologies Company Ltd. Shanghai 518129China Department of Electronic and Electrical Engineering University College LondonLondon WC1E7JEUK Key Laboratory of Micro-Nano Electronic Devices and Smart Systems of Zhejiang Province College of Information Science and Electronic EngineeringZhejiang UniversityHangzhou 310027China

Plasmonics could provide compact and powerful solutions for manipulating light in deep-subwavelength dimensions,which is promising for a great range of nanophotonic technologies such as plasmonic rulers and ***,the effective area of enhanced localized field induced by surface plasmon polaritons is typically restricted to the structural *** this work,we propose a method to generate high quality-factor extended electromagnetic fields via hybridizing the superradiant state and the quasi bound state in the continuum of graphene *** coupling interaction involved operates as a three-level system with multiple sharp resonances immune to the polarization,which holds great promise for developing nanodevices with high sensing capacity in two dimensions.

关键词： plasmon hybridization quasi bound state in the continuum high-Q sensing

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Dynamic neural network with memristive CIM and CAM for 2D and 3D vision

arXiv

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arXiv 2024年

作者： Zhang, Yue Zhang, Woyu Wang, Shaocong Lin, Ning Yu, Yifei He, Yangu Wang, Bo Jiang, Hao Lin, Peng Xu, Xiaoxin Qi, Xiaojuan Wang, Zhongrui Zhang, Xumeng Shang, Dashan Liu, Qi Cheng, Kwang-Ting Liu, Ming Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100049 China ACCESS – AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong Institute of the Mind The University of Hong Kong Hong Kong Key Lab of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Beijing100049 China State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai200433 China University of Chinese Academy of Sciences Beijing100049 China College of Computer Science and Technology Zhejiang University Zhejiang310027 China Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Hong Kong

The brain is dynamic, associative and efficient. It reconfigures by associating the inputs with past experiences, with fused memory and processing. In contrast, AI models are static, unable to associate inputs with past experiences, and run on digital computers with physically separated memory and processing. We propose a hardware-software co-design, a semantic memory-based dynamic neural network (DNN) using memristor. The network associates incoming data with the past experience stored as semantic vectors. The network and the semantic memory are physically implemented on noise-robust ternary memristor-based Computing-In-Memory (CIM) and Content-Addressable Memory (CAM) circuits, respectively. We validate our co-designs, using a 40nm memristor macro, on ResNet and PointNet++ for classifying images and 3D points from the MNIST and ModelNet datasets, which not only achieves accuracy on par with software but also a 48.1% and 15.9% reduction in computational budget. Moreover, it delivers a 77.6% and 93.3% reduction in energy consumption. © 2024, CC BY.

关键词： Memristors

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Direct Cu-polyimide Bonding Achieved by Surface Activation and Pt-catalyzed Formic Acid Atmosphere

Direct Cu-polyimide Bonding Achieved by Surface Activation a...

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IEEE International Conference on Integrated circuits, Technologies and Applications (ICTA)

作者： Ying Meng Runhua Gao Xinhua Wang Xiaojuan Chen Sen Huang Ke Wei Dahai Wang Fengwen Mu Xinyu Liu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

ISBN: (纸本)9781665417488

Recent flexible printed circuit applications of high-frequency wireless communication systems require thicker metal layers on substrates for lower ohmic losses. In this paper, a Cu layer over 50-micron thick was directly generated on the polyimide substrate by heterogeneous bonding method without interlayer. The polyimide was first sputtered a 200 nm-thick Cu layer, and then was activated by oxygen plasma to improve its hydrophilicity and achieve direct adhesion between polyimide and nanoscale Cu deposition, and eventually was bonded with a 50micron-thick Cu foil in a Pt-catalyzed formic acid atmosphere by thermo-compression. The effectiveness of this method was verified by comparing bonding interfaces, shear strength, and fracture modes of bonded samples with and without a Cr interlayer. This method provides a new idea for the integration of heterogeneous materials needed in wearable products and flexible printed circuits.

关键词： Wireless communication Integrated circuit technology Flexible printed circuits Atmosphere Metals Polyimides Nanoscale devices

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Polarization tunable bidirectional photoresponse in Van der Waals α−In2Se3/NbX2 (X=S,Se,andTe) ferroelectric diodes

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Physical Review Materials 2023年第8期7卷 084412-084412页

作者： Shibo Fang Qiuhui Li Chen Yang Baochun Wu Shiqi Liu Jie Yang Jiachen Ma Zongmeng Yang Kechao Tang Jing Lu State Key Laboratory for Mesoscopic Physics and School of Physics Peking University Beijing 100871 People's Republic of China State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics Tsinghua University Beijing 100871 People's Republic China Key Laboratory of Spintronics Materials Devices and Systems of Zhejiang Province Hangzhou 311305 People's Republic of China Key Laboratory of Material Physics School of Physics and Microelectronics Ministry of Education Zhengzhou University Zhengzhou 450001 People's Republic of China Research Center for Materials Architectures and Integration of Nanomembranes (MAIN) Chemnitz University of Technology 09126 Chemnitz Germany School of Integrated Circuits Peking University Beijing 100871 People's Republic of China Collaborative Innovation Center of Quantum Matter Beijing 100871 People's Republic of China Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD) Peking University Beijing 100871 People's Republic of China Peking University Yangtze Delta Institute of Optoelectronics Nantong 226010 People's Republic of China Key Laboratory for the Physics and Chemistry of Nanodevices Peking University Beijing 100871 People's Republic of China

Ferroelectric diodes can generate a polarization-controlled bidirectional photoresponse to simulate inhibition and promotion behaviors in the artificial neuromorphic system with fast speed, high energy efficiency, and nonvolatility. However, the existing ferroelectric diodes based on ferroelectric oxides suffer from a weak bidirectional photoresponse (below 1 mA/W), difficult miniaturization, and a large response photon energy (over 3 eV). Here, we design a series of van der Waals α−In2Se3/NbX2 (X = S, Se, and Te) ferroelectric diodes with bidirectional photoresponse by using ab initio quantum transport simulation. These devices show a maximum bidirectional photoresponse of 30 (−19) mA/W and a minimum response photon energy of 1.3 eV at the monolayer thickness. Our work shows advanced optoelectronic applications of the van der Waals ferroelectric diodes in the future artificial neuromorphic system.

关键词： Ferroelectricity First-principles calculations Photocurrent 2-dimensional systems Diodes Ferroelectrics Density functional theory Landauer formula

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Ferroelectricity in HfO2 from a chemical perspective

arXiv

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arXiv 2022年

作者： Yuan, Jun-Hui Mao, Ge-Qi Xue, Kan-Hao Bai, Na Wang, Chengxu Cheng, Yan Lyu, Hangbing Sun, Huajun Wang, Xingsheng Miao, Xiangshui School of Integrated Circuits School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan430074 China Hubei Yangtze Memory Laboratories Wuhan430205 China Department of Electronics East China Normal University Shanghai200241 China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Ferroelectricity observed in thin film HfO2, either doped with Si, Al, etc. or in the Hf0.5Zr0.5O2 form, has gained great technical significance. However, the soft mode theory faces a difficulty in explaining the origin of such ferroelectricity. In this work, we propose that the 7 cation coordination number of HfO2/ZrO2 lies at the heart of this ferroelectricity, which stems from the proper ionic radii of Hf/Zr compared with O. Among the numerous compounds with non-centrosymmetric nature, e.g., mm2 point group, HfO2 and ZrO2 are special in that they are close to the border of 7 and 8 cation coordination, such that the 8-coordination tetragonal intermediate phase could greatly reduce the switching barrier. Other 7-coordination candidates, including SrI2, TaON, YSBr and YOF are also studied in comparison to HfO2/ZrO2, and six switching paths are analyzed in detail for the Pca21 phase. A rule of preferred switching path in terms of ionic radii ratio and coordination number has been established. We also show the possible route from ferroelectric Pca21 phase to monoclinic P21/c phase in HfO2, which is relevant to the fatigue phenomenon. Copyright © 2022, The Authors. All rights reserved.

关键词： Ferroelectricity

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