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International Conference on Solid-State and Integrated Circuit Technology

作者： Qingguo Gao Chongfu Zhang Zhenfeng Zhang Zichuan Yi Xinjian Pan Feng Chi Liming Liu Xuefei Li Yanqing Wu School of Electronic Information University of Electronic Science and Technology of China Zhongshan Institute Zhongshan China Wuhan National High Magnetic Field Center and School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan China Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MOE) and Frontiers Science Center for Nano-optoelectronics Peking University Beijing China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

Recently, due to its potential in high-speed flexible electronics, radio-frequency transistors based on two-dimensional MoS 2 has attracted the interest of researchers. However, for the moment, little is known on the RF performance of MoS 2 transistors at cryogenic temperatures, which is important for evaluating performance limits of high-frequency MoS 2 devices. In this work, we report the RF performance of MoS 2 transistors at cryogenic temperatures based on chemical vapor deposited bilayer MoS 2 for the first time. As the temperature reduces, the higher cut-off frequency was achieved. At the liquid helium temperature, extrinsic and intrinsic fT of 5.7 and 12.7 GHz for the transistor with 300 nm gate-length were achieved. Furthermore, saturation velocity and intrinsic fmax of 2.4×10 6 cm/s and 24 GHz were obtained at 4.3 K, respectively. The revealed high-frequency performances of MoS 2 transistors at cryogenic temperatures are helpful to the advancement of MoS 2 high-frequency electronics.

关键词： Transistors Radio frequency Cryogenics Logic gates MOSFET Cutoff frequency Transconductance

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Impact of Gate Asymmetry on Gate-All-Around Silicon Nanowire Transistor Parasitic Capacitance 14

Impact of Gate Asymmetry on Gate-All-Around Silicon Nanowire...

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14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018

作者： Dong, Xiaoqiao Yang, Yuancheng Chen, Gong Sun, Shuang Cai, Qifeng Li, Xiaokang An, Xia Xu, Xiaoyan Zhang, Wanrong Li, Ming Faculty of Information Technology Beijing University of Technology Beijing100124 China Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing100871 China

ISBN: (纸本)9781538644409

In this paper, an analytical model is developed for parasitic gate capacitance of the gate-all-around (GAA) silicon nanowire MOSFETs (SNWT) with asymmetrical top and bottom gates. The modeling results show that the gate-to-source/drain spacer significantly impacts on the parasitic capacitance especially in the case of top-to-bottom gate misalignment. It is found that the optimized top-to-bottom gate misalignment may achieve smaller Cp/Ctotal so as to improve the AC performance of GAA SNWT. The developed capacitance model is more suitable for the actual process for further device design optimization. © 2018 IEEE.

关键词： Nanowires

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High Performance Gigahertz Flexible Radio Frequency Transistors with Extreme Bending Conditions

High Performance Gigahertz Flexible Radio Frequency Transist...

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International Electron devices Meeting (IEDM)

作者： Mengfei Wang Mengchuan Tian Zhenfeng Zhang Shengman Li Runsheng Wang Chengru Gu Xiaoyu Shan Xiong Xiong Xuefei Li Ru Huang Yanqing Wu Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MoE) Peking University Beijing Wuhan National High Magnetic Field Center and School of Electrical and Electronic Engineering Huazhong University of Science and Technology Wuhan China

In this work, ultrathin indium tin oxide (ITO) radio frequency (RF) transistors have been demonstrated for the first time, where inverted gate structure are used with a flexible polyimide substrate using magnetron sputtering at a thermal budget below 200 °C. The 160 nm channel length device exhibits excellent DC characteristics, including mobility of 26 cm 2 /V·s and an I on /I off ratio of 6.6×10 8 . A record-high extrinsic cut-off frequency (f T ) of 2.1 GHz and an extrinsic maximum oscillation frequency (f max ) of 3.7 GHz have also been obtained, which are more than one order of magnitude higher than previous results on flexible substrate. A high conversion gain of -20.9 dB has been achieved for the gigahertz frequency mixer based on flexible ITO RF transistor. Moreover, the stability of DC and RF performance under different bending conditions up to 50,000 bending cycles or down to 1 mm bending radius are studied without device failure.

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High performance optoelectronics based on CVD Mos2

High performance optoelectronics based on CVD Mos2

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International Conference on ASIC

作者： Qianlan Hu Zhenfeng Zhang Yanqing Wu Wuhan National High Magnetic Field Center and School of Optical and Electronic Information Huazhong University of Science & Technology Wuhan China Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MoE) Peking University Beijing China

Transition metal dichalcogenides (TMDs) are regarded as promising nano materials for next generation electronics and optoelectronics due to their ultrathin body nature and excellent transport properties. Here, single crystal growth of monolayer Mos 2 has been realized by controllable atmosphere pressure chemical vapor deposition (APCVD) method. The high-quality of Mos 2 grown directly on SiO 2 /Si substrate has been demonstrated by various material characterization methods. The fabricated optoelectronic device shows prominent photoresponse within a broadband spectrum range and a wide optical power range by taking advantage of the Schottky contact at source/drain electrodes. As a result, high photoresponsivity of 3×10 4 A/W as well as high photodetectivity up to 7×10 12 Jones have been achieved.

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Design and simulation of a novel multi-floating-gate synaptic nanowire transistor for neuromorphic computing

Design and simulation of a novel multi-floating-gate synapti...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Xiaokang Li Yuancheng Yang Gong Chen Shuang Sun Qifeng Cai Xiaoqiao Dong Xiaoyan Xu Xia An Ming Li Ru Huang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

In this paper, we proposed a novel multi-floating-gate synaptic nanowire transistor which can emulate synapses behaviors such as long-term potentiation (LTP), long-term depression (LTD), integration signals from multiple pre- synapses and successive synaptic weight modulation, it can also realize high density interconnection in current CMOS IC technology to build complex neural network. Meanwhile, a novel scheme was also proposed to simulate amplitude-adjustable function by properly controlling the polarity-gates. Therefore, the multiple synaptic behaviors can be realized by the proposed new device, making it a competitive candidate for neuromorphic systems.

关键词： Synapses Neuromorphics Nanobioscience Transistors Logic gates Mathematical model

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Design of low-power high-speed dual-modulus frequency divider with improved MOS current mode logic

Design of low-power high-speed dual-modulus frequency divide...

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IEEE Conference on Electron devices and Solid-State circuits

作者： Wanlu Wang Song Jia Tao Pan Yuan Wang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781538662359

One design technique that aims to reduce power consumption of MOS current mode logic dual-modulus frequency divider is presented in this paper. With combinational logic transferred the proposed scheme can obtain high working frequency. By merging the first master latches of CML DFFs, the simplified structure can achieve lower power consumption. Circuit simulation of the proposed structure in 28nm CMOS technology shows a 21% reduction of power consumption over conventional scheme is achieved at frequency of 56GHz.

关键词： Frequency conversion Latches Power demand Clocks CMOS technology Power dissipation Logic gates

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ESD Robustness of Silicon Nanowire Transistor (SNWT) Combined with Thermal Analysis and Optimization

ESD Robustness of Silicon Nanowire Transistor (SNWT) Combine...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Ming Li Jiewen Fan Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

In this paper, self-heating model of SNWT is studied. For the first time, the excellent heat dissipation per channel width for SNWT is disclosed. The special 2D heat dissipation mode is believed to be the reason. Accordingly, a novel SNWT was proposed to improve the ESD robustness of gate-grounded SNWT with removal of buried oxide under gate. Experiments show the record failure current density of 18.8mA/μm with 5nm diameter. Provided highly uniform nanowire array fabrication capability, SNWT can also achieve high total failure current and ESD voltage.

关键词： Electrostatic discharges Logic gates Thermal resistance Heating systems Performance evaluation Robustness

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Low Voltage Dual-Modulus Frequency Divider Based on Extended True Single-Phase Clock Logic

Low Voltage Dual-Modulus Frequency Divider Based on Extended...

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IEEE Conference on Electron devices and Solid-State circuits

作者： Wanlu Wang Song Jia Ziyi Wang Tao Pan Yuan Wang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781538662359

Two low voltage dual-modulus frequency divider based on extended true single-phase clock (E-TSPC) logic are proposed. By reducing the number of serial transistors from VDD to GND, the proposed designs can effectively work at low voltage. Simulation results in SMIC 40nm technology show that the presented design I has better power and speed performance with lower supply voltage. Compared to the referenced designs, the presented design II can work at the lowest supply voltage with little loss of performance.

关键词： Low voltage Transistors Power demand Clocks Frequency conversion Robustness CMOS technology

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Author Correction: Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing

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Nature materials 2024年第5期23卷 723页

作者： Guangjian Wu Xumeng Zhang Guangdi Feng Jingli Wang Keji Zhou Jinhua Zeng Danian Dong Fangduo Zhu Chenkai Yang Xiaoming Zhao Danni Gong Mengru Zhang Bobo Tian Chungang Duan Qi Liu Jianlu Wang Junhao Chu Ming Liu State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai China. Shanghai Qi Zhi Institute Xuhui District Shanghai China. Zhangjiang Fudan International Innovation Center Fudan University Shanghai China. Key Laboratory of Polar Materials and Devices (MOE) Ministry of Education Shanghai Center of Brain-inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai China. State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai China. Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China. Key Laboratory of Polar Materials and Devices (MOE) Ministry of Education Shanghai Center of Brain-inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai China. bbtian@***. State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai China. qi_liu@***. Shanghai Qi Zhi Institute Xuhui District Shanghai China. qi_liu@***. Zhangjiang Fudan International Innovation Center Fudan University Shanghai China. qi_liu@***. State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai China. jianluwang@***. Shanghai Qi Zhi Institute Xuhui District Shanghai China. jianluwang@***. Zhangjiang Fudan International Innovation Center Fudan University Shanghai China. jianluwang@***. Institute of Optoelectronics Shanghai Frontier Base of Intelligent Optoelectronics and Perception Fudan University Shanghai China. jianluwang@***. Institute of Optoelectronics Shanghai Frontier Base of Intelligent Optoelectronics and Perception Fudan University Shanghai China.

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Nonvolatile memristor as a new platform for non-von Neumann computing

Nonvolatile memristor as a new platform for non-von Neumann ...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Liying Xu Lin Bao Teng Zhang Ke Yang Yimao Cai Yuchao Yang Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China

Nonvolatile logic based on memristors provides a promising approach toward efficient Non-von Neumann computing. Here we propose a methodology employing hybrid bipolar-unipolar memristive circuits for efficient in-memory logic functions. By combining the features of bipolar and unipolar memristors, the proposed circuits are able to execute both fundamental Boolean logic and arithmetic computing with high reconfigurability and high parallelism, which compares favorably with existing methods of in-memory logic based on memristors. This work could thus pave the way for the development of new in-memory computing architecture with high efficiency.

关键词： Memristors Adders Logic arrays Logic functions Logic gates Nonvolatile memory Parity check codes

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