检索结果-内蒙古大学图书馆

International Conference on Solid-State and Integrated Circuit Technology

作者： Pei Peng Zhongzhen Tian Muchan Li Zidong Wang Liming Reng Yunyi Fu Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China

Current mirrors are significant elements in analog integrated circuits. Here, graphene-based field-effect transistors (GFETs) are fabricated and the parameters of device model for the fabricated GFETs are extracted from the measured I-V characteristics. The GFETs model was then coded with Verilog-A language for circuit simulation. Using simulation, we investigate the electrical properties of GFETs-based current mirrors. We found that in simple current mirror configuration, the output current is intensively dependent on the output voltage, and cannot track the reference current well. However, in GFETs-based cascode current mirror configuration, the output current can track the reference current in a proper range of output voltage, indicating the GFETs can implement cascode current mirrors. Furthermore, the GFETs-based cascode current mirror working as a load can efficiently improve the voltage gain of the GFETs-based amplifiers when compared to a resistor load.

关键词： Mirrors Graphene Integrated circuit modeling Logic gates Resistors Analytical models Current measurement

来源：评论

学校读者我要写书评

暂无评论

A Physical Current Model for Self-Depleted T-gate Schottky Barrier Tunneling FET with Low SS and High ION/IOFF

A Physical Current Model for Self-Depleted T-gate Schottky B...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Jin Luo Zhu Lv Qian-Qian Huang Cheng Chen Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China

Compared with conventional tunneling field-effect transistor (TFET), the novel T-gate Schottky barrier TFET (TSB-TFET) with adaptive operation mechanism can effectively achieve higher I ON with dominant Schottky current, lower I OFF by introducing self-depleted effect and steep subthreshold slope with dominant band-to-band tunneling current. To facilitate the circuit simulation based on this new kind of device, in this paper, we establish a physical current model of TSB-TFET through modeling its modulated band-to-band tunneling and Schottky barrier injection current respectively. The current model results with different device parameters agree well with Sentaurus TCAD simulation results, showing its high applicability for further circuit design and simulation.

关键词： Junctions Schottky barriers Tunneling TFETs Logic gates Integrated circuit modeling Fingers

来源：评论

学校读者我要写书评

暂无评论

Switching Dynamics and Computing Applications of Memristors:An Overview 12

Switching Dynamics and Computing Applications of Memristors:...

引用

2017 IEEE 12th International Conference on ASIC

作者： Qingxi Duan Teng Zhang Minghui Yin Caidie Cheng Liying Xu Yuchao Yang Ru Huang Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking University

ISBN: (纸本)9781509066261;9781509066254

Memristors have acquired a lot of attention due to their potential applications in nonvolatile memory,reconfigurable logic,analog circuits and neuromorphic computing etc.,and important progress has been made *** we first shed light on the switching dynamics of oxide based memristors by electrostatic force microscopy(EFM).We further demonstrate a new type of vertical 3-terminal oxide based memristive device capable of implementing heterosynaptic *** address the long-standing issue of device variations in memristors limiting the construction of neuromorphic computing systems,we propose a fuzzy restricted Boltzmann machine(FRBM) network that can effectively tolerate device ***,we show that nonvolatile Boolean logic can also be achieved in the same 3-terminal heterosynaptic devices in an efficient manner,compared with conventional 2-terminal memristors.

关键词： memristors switching dynamics neuromorphic computing nonvolatile logic fuzzy restricted Boltzmann machine(FRBM) network

来源：评论

学校读者我要写书评

暂无评论

Flexible memristors as electronic synapses for neuro- inspired computation based on scotch tape-exfoliated mica substrates

引用

Nano Research 2018年第3期11卷 1183-1192页

作者： Xiaobing Yan Zhenyu Zhou Jianhui Zhao Qi Liu Hong Wang Guoliang Yuan Jingsheng Chen College of Electron and Information Engineering Key Laboratory of Digital Medical Engineering of Hebei Province Key Laboratory of Optoelectronic Information Materials of Hebei Province Hebei University Baoding 071002 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China School of Materials Science and Engineering Nanjing University of Science and Technology Nanjing 210094 China Department of Materials Science and Engineering National University of Singapore Singapore 117576 Singapore

Flexible memristor devices based on plastic substrates have attracted considerable attention due to their applications in wearable computers and integrated circuits. However, most plastic-substrate memristors cannot function or be grown in high-temperature environments. In this study, scotch-tape-exfoliated mica was used as the flexible memristor substrate in order to resolve these high-temperature issues. Our TiN/ZHO/IGZO memristor, which was constructed using a thin （10 μm） mica substrate, has superior flexibility and thermostability. After bending it 103 times, the device continues to exhibit exceptional electrical characteristics. It can also be implemented for transitions between high and low resistance states, even in temperatures of up to 300 ℃. More importantly, the biological synaptic characteristics of paired-pulse facilitation/depression （PPF/PPD） and spike- timing-dependent plasticity （STDP） were observed through applying different pulse measurement modes. This work demonstrates that flexible memristor devices on mica substrates may potentially allow for the realization of high-temperature memristor applications for biologically-inspired computing systems.

关键词： mica flexible memristor synapse

来源：评论

学校读者我要写书评

暂无评论

Echo state graph neural networks with analogue random resistor arrays

arXiv

引用

arXiv 2021年

作者： Wang, Shaocong Li, Yi Wang, Dingchen Zhang, Woyu Chen, Xi Dong, Danian Wang, Songqi Zhang, Xumeng Lin, Peng Gallicchio, Claudio Xu, Xiaoxin Liu, Qi Cheng, Kwang-Ting Wang, Zhongrui Shang, Dashan Liu, Ming Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China ACCESS - AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong University of Chinese Academy of Sciences Beijing100049 China Frontier Institute of Chip and System Fudan University Shanghai 200433 China College of Computer Science and Technology Zhejiang University Zhejiang310027 China Department of Computer Science University of Pisa Largo B. Pontecorvo 3 Pisa56127 Italy Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Hong Kong

Recent years have witnessed an unprecedented surge of interest, from social networks to drug discovery, in learning representations of graph-structured data. However, graph neural networks, the machine learning models for handling graph-structured data, face significant challenges when running on conventional digital hardware, including von Neumann bottleneck incurred by physically separated memory and processing units, slowdown of Moore's law due to transistor scaling limit, and expensive training cost. Here we present a novel hardware-software co-design, the random resistor array-based echo state graph neural network, which addresses these challenges. The random resistor arrays not only harness low-cost, nanoscale and stackable resistors for highly efficient in-memory computing using simple physical laws, but also leverage the intrinsic stochasticity of dielectric breakdown to implement random projections in hardware for an echo state network that effectively minimizes the training cost thanks to its fixed and random weights. The system demonstrates state-of-the-art performance on both graph classification using the MUTAG and COLLAB datasets and node classification using the CORA dataset, achieving 34.2×, 93.2×, and 570.4× improvement of energy efficiency and 98.27%, 99.46%, and 95.12% reduction of training cost compared to conventional graph learning on digital hardware, respectively, which may pave the way for the next generation AI system for graph learning. Copyright © 2021, The Authors. All rights reserved.

关键词： Graphic methods

来源：评论

学校读者我要写书评

暂无评论

Insight into multiple-triggering effect in DTSCRs for ESD protection

引用

Journal of Semiconductors 2017年第7期38卷 93-96页

作者： Lizhong Zhang Yuan Wang Yize Wang Yandong He Key Laboratory of Microelectronic Devices and Circuits (MoE) Institute of Microelectronics Peking UniversityBeijing 100871 China

The diode-triggered silicon-controlled rectifier（DTSCR） is widely used for electrostatic discharge（ESD） protection in advanced CMOS process owing to its advantages, such as design simplification, adjustable trigger/holding voltage, low parasitic capacitance. However, the multiple-triggering effect in the typical DTSCR device may cause undesirable larger overall trigger voltage, which results in a reduced ESD safe margin. In previous research, the major cause is attributed to the higher current level required in the intrinsic SCR. The related discussions indicate that it seems to result from the current division rule between the intrinsic and parasitic SCR formed in the triggering process. In this letter, inserting a large space into the trigger diodes is proposed to get a deeper insight into this issue. The triggering current is observed to be regularly reduced along with the increased space, which confirms that the current division is determined by the parasitic resistance distributed between the intrinsic and parasitic SCR paths. The theoretical analysis is well confirmed by device simulation and transmission line pulse（TLP） test results. The reduced overall trigger voltage is achieved in the modified DTSCR structures due to the comprehensive result of the parasitic resistance vs triggering current, which indicates a minimized multipletriggering effect.

关键词： electrostatic discharge（ESD） diode-triggered silicon-controlled rectifier（DTSCR） double snapback transmission line pulse（TLP） test

来源：评论

学校读者我要写书评

暂无评论

How to Report and Benchmark Emerging Field-Effect Transistors

arXiv

引用

arXiv 2022年

作者： Cheng, Zhihui Pang, Chin-Sheng Wang, Peiqi Le, Son T. Wu, Yanqing Shahrjerdi, Davood Radu, Iuliana Lemme, Max C. Peng, Lian-Mao Duan, Xiangfeng Chen, Zhihong Appenzeller, Joerg Koester, Steven J. Pop, Eric Franklin, Aaron D. Richter, Curt A. Nanoscale Device Characterization Division National Institute of Standards and Technology GaithersburgMD20899 United States Department of Electrical and Computer Engineering Purdue University West LafayetteIN47907 United States Department of Chemistry and Biochemistry University of California Los Angeles Los AngelesCA90095 United States Theiss Research La Jolla CA92037 United States School of Integrated Circuits Peking University Beijing100871 China Electrical and Computer Engineering New York University BrooklynNY11201 United States Center for Quantum Phenomena Physics Department New York University New YorkNY10003 United States IMEC Leuven Belgium RWTH Aachen University Electronic Devices Otto-Blumenthal-Str. 2 Aachen52074 Germany AMO GmbH Advanced Microelectronic Center Aachen Otto-Blumenthal-Str. 25 Aachen52074 Germany Key Laboratory for the Physics and Chemistry of Nanodevices Center for Carbon-Based Electronics Department of Electronics Peking University Beijing China Department of Electrical and Computer Engineering University of Minnesota MinneapolisMN55455 United States Department of Electrical Engineering Stanford University StanfordCA94305 United States Department of Electrical and Computer Engineering Duke University DurhamNC27708 United States Department of Chemistry Duke University DurhamNC27708 United States

The use of organic, oxide and low-dimensional materials in field-effect transistors has now been studied for decades. However, properly reporting and comparing device performance remains challenging due to the interdependency of multiple device parameters. The interdisciplinarity of this research community has also led to a lack of consistent reporting and benchmarking guidelines. Here we propose guidelines for reporting and benchmarking key field-effect transistor parameters and performance metrics. We provide an example of this reporting and benchmarking process by using a two-dimensional semiconductor field-effect transistor. Our guidelines should help promote an improved approach for assessing device performance in emerging field-effect transistors, helping the field to progress in a more consistent and meaningful way. © 2022, CC BY.

关键词： Benchmarking

来源：评论

学校读者我要写书评

暂无评论

Publisher Correction: Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing

引用

Nature materials 2023年第11期22卷 1430页

作者： Guangjian Wu Xumeng Zhang Guangdi Feng Jingli Wang Keji Zhou Jinhua Zeng Danian Dong Fangduo Zhu Chenkai Yang Xiaoming Zhao Danni Gong Mengru Zhang Bobo Tian Chungang Duan Qi Liu Jianlu Wang Junhao Chu Ming Liu State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai China. Shanghai Qi Zhi Institute Xuhui District Shanghai China. Zhangjiang Fudan International Innovation Center Fudan University Shanghai China. Key Laboratory of Polar Materials and Devices (MOE) Ministry of Education Shanghai Center of Brain-inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai China. State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai China. Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China. Key Laboratory of Polar Materials and Devices (MOE) Ministry of Education Shanghai Center of Brain-inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai China. bbtian@***. State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai China. qi_liu@***. Shanghai Qi Zhi Institute Xuhui District Shanghai China. qi_liu@***. Zhangjiang Fudan International Innovation Center Fudan University Shanghai China. qi_liu@***. State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai China. jianluwang@***. Shanghai Qi Zhi Institute Xuhui District Shanghai China. jianluwang@***. Zhangjiang Fudan International Innovation Center Fudan University Shanghai China. jianluwang@***. Institute of Optoelectronics Shanghai Frontier Base of Intelligent Optoelectronics and Perception Fudan University Shanghai China. jianluwang@***. Institute of Optoelectronics Shanghai Frontier Base of Intelligent Optoelectronics and Perception Fudan University Shanghai China.

来源：评论

学校读者我要写书评

暂无评论

A 781Mbps-5Gbps DLL-Based CDR with Starting-Control Circuit

A 781Mbps-5Gbps DLL-Based CDR with Starting-Control Circuit

引用

IEEE International Conference on Solid-State and Integrated Circuit Technology

作者： Cheng Li Yuequan Liu Song Jia Yuan Wang Key Laboratory of Microelectronic Devices and Circuits (MoE) Institute of Microelectronics Peking University Beijing P. R. China

This paper presents a 781 Mbps-5 Gbps wide-range clock and data recovery (CDR) circuit combined delay-locked loop (DLL). A novel starting-control circuit is introduced to solve the inherent problem of false locking and expand the phase capture range. The phase detector (PD) achieves sampling and charge-pump tasks in one pass-gate construction, which optimizes the design complexity and cost. The results demonstrate the peak-to-peak jitter is 5.74 ps and the total power consumption is 4.6 mW at 4 Gbps with 1.2V power supply.

关键词： DLL-Based CDR PD

来源：评论

学校读者我要写书评

暂无评论

Two-Dimensional Heterojunction Photovoltaic Cells with Low Spontaneous-Radiation Loss and High Efficiency Limit

引用

Physical Review Applied 2019年第3期12卷 034023-034023页

作者： Jiangtao Liu Menghui Fan Kun Luo Qin Yang Jun Li Zhenhua Wu College of Mechanical and Electrical Engineering Guizhou Minzu University Guiyang 550025 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Department of Physics Semiconductor Photonics Research Center Xiamen University Xiamen 361005 China University of CAS Beijing 100049 China

This work presents theoretical investigations on the spontaneous-radiation loss of two-dimensional van der Waals heterojunction photovoltaic cells (2D-PVcs) combined with an interference-based light-trapping structure. We find that 2D-PVcs possess much lower spontaneous radiation loss, since the solid angle of the spontaneous radiation is a magnitude smaller than that in traditional PVcs. The efficiency limit of a 2D-PVc can be 10% larger than that of a traditional PVc. Furthermore, we demonstrate that the spontaneous-radiation loss can be further reduced by introducing only a weak light-concentrating system, approaching the efficiency limit of traditional PVcs under perfect focus. In a trapped structure, the smaller the light absorption coefficients of the photovoltaic cells, the higher are the efficiency limits that are achieved. Finally, the spontaneous-radiation loss increases as the battery thickness increases, indicating that the 2D-PVc has the lowest spontaneous emission loss because of its extremely low thickness.

关键词： Carrier generation & recombination Optical lattices & traps Optoelectronics Photovoltaic absorbers Multilayer thin films Organic semiconductors Solar cells Van der Waals systems

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：