检索结果-内蒙古大学图书馆

2017 IEEE 12th International Conference on ASIC

作者： Binbin Lyu Wengao Lu Sijia Yang Zhongjian Chen Yacong Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Peking University Information Technology Institute(Tianjin Binhai)

ISBN: (纸本)9781509066261;9781509066254

This paper introduces a self-adaptive digital technique to calibrate multi-channel SAR *** than achieving higher resolution by adjusting the analog component values,this new digital method infers the capacitor weights of a SAR ADC with the help of a channel-shared high resolution sigma-delta ADC,which results in remarkable improvements in the capacitive SAR ADCs' *** increases from 11.06 bits to 12.67 *** digital calibration logic is based on LMS(least mean squares) and gradient descent.

关键词： SAR ADC multi-channel digital calibration

来源：评论

学校读者我要写书评

暂无评论

Flexible cation-based threshold selector for resistive switching memory integration

引用

Science China(Information Sciences) 2018年第6期61卷 50-57页

作者： Xiaolong ZHAO Rui WANG Xiangheng XIAO Congyan LU Facai WU Rongrong CAO Changzhong JIANG Qi LIU Department of Physics Hubei Nuclear Solid Physics Key Laboratory and Center for Ion beam ApplicationWuhan University Key Laboratory of Microelectronic Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences

Emerging resistive switching random access memory（RRAM）, considered as the most promising candidate of flash memory, is favorable for in flexible electronic system. However, in high density flexible crossbar RRAM array, crosstalk issue that currents from the neighboring unselected cell lead to failure of write and read operations, still keeps a main bottleneck. Therefore, flexible selector compatible with the flexibility of the RRAM array should be focused on to configure one selector-one resistor（1 S1 R） system,which is immune to crosstalk issue. In this paper, flexible cation-based threshold switching（TS） selectors（Pt/Ag/Hf O2/Pt/Ti/parylene） are fabricated and the compressive performance is studied *** device shows excellent bidirectional volatile TS characteristics, including high selectivity ratio（10～9）, low operating voltages（|VTH|<1 V）, ultra-low leakage current(～10-13A) and good flexibility. The successful demonstration of the wire connected 1 S1 R unit comprising this flexible selector and one bipolar resistor cell indicates the great potential of this cation-based selector to restrain the crosstalk issue in a large flexible RRAM array.

关键词： cation-based threshold switching resistive switching flexible selector conductive filament(CF) 1S1R

来源：评论

学校读者我要写书评

暂无评论

Impact of Gate Asymmetry on Gate-All-Around Silicon Nanowire Transistor Parasitic Capacitance

Impact of Gate Asymmetry on Gate-All-Around Silicon Nanowire...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Xiaoqiao Dong Yuancheng Yang Gong Chen Shuang Sun Qifeng Cai Xiaokang Li Xia An Xiaoyan Xu Wanrong Zhang Ming Li Faculty of Information Technology Beijing University of Technology Beijing China Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

In this paper, an analytical model is developed for parasitic gate capacitance of the gate-all-around (GAA) silicon nanowire MOSFETs (SNWT) with asymmetrical top and bottom gates. The modeling results show that the gate-to-source/drain spacer significantly impacts on the parasitic capacitance especially in the case of top-to-bottom gate misalignment. It is found that the optimized top-to-bottom gate misalignment may achieve smaller C p /C total so as to improve the AC performance of GAA SNWT. The developed capacitance model is more suitable for the actual process for further device design optimization.

关键词： Logic gates Parasitic capacitance Gallium arsenide Semiconductor device modeling MOSFET Silicon

来源：评论

学校读者我要写书评

暂无评论

Metric-Torsion Duality of Optically Chiral Structures

引用

Physical Review Letters 2019年第20期122卷 200201-200201页

作者： Yongliang Zhang Lina Shi Ruo-Yang Zhang Jinglai Duan Jack Ng C. T. Chan Kin Hung Fung Department of Applied Physics The Hong Kong Polytechnic University Hong Kong China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Department of Physics The Hong Kong University of Science and Technology Hong Kong China Institute of Modern Physics Chinese Academy of Sciences Lanzhou 730000 China Department of Physics Hong Kong Baptist University Hong Kong China

We develop a metric-torsion theory for chiral structures by using a generalized framework of transformation optics. We show that the chirality is uniquely determined by a metric with the local rotational degree of freedom. In analogy to the dislocation continuum, the chirality can be alternatively interpreted as the torsion tensor of a Riemann-Cartan space, which is mimicked by the anholonomy of the orthonormal basis. As a demonstration, we reveal the equivalence of typical three-dimensional chiral metamaterials in the continuum limit. Our theory provides an analytical recipe to design optical chirality.

关键词： Transformation optics Complex media Metamaterials

来源：评论

学校读者我要写书评

暂无评论

High-throughput Synthesis of Solution-Processable van der Waals Heterostructures through Electrochemistry

引用

Angewandte Chemie 2023年第28期135卷

作者： Dr. Huanhuan Shi Prof. Mengmeng Li Shuai Fu Dr. Christof Neumann Dr. Xiaodong Li Dr. Wenhui Niu Yunji Lee Prof. Mischa Bonn Dr. Hai I. Wang Prof. Andrey Turchanin Dr. Ali Shaygan Nia Dr. Sheng Yang Prof. Xinliang Feng Center for Advancing Electronics Dresden (cfaed) and Department of Chemistry and Food Chemistry Technische Universität Dresden Mommsenstrasse 4 01062 Dresden Germany Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China University of Chinese Academy of Sciences 100049 Beijing China Max Planck Institute for Polymer Research Ackermannweg 10 55128 Mainz Germany Institute of Physical Chemistry and Center for Energy and Environmental Chemistry Jena (CEEC Jena) Friedrich Schiller University Jena Lessingstrasse 10 07743 Jena Germany Max Planck Institute for microstructure physics Weinberg 2 06120 Halle Germany Frontiers Science Center for Transformative Molecules School of Chemistry and Chemical Engineering Shanghai Jiao Tong University 200240 Shanghai China

Two-dimensional van der Waals heterostructures (2D vdWHs) have recently gained widespread attention because of their abundant and exotic properties, which open up many new possibilities for next-generation nanoelectronics. However, practical applications remain challenging due to the lack of high-throughput techniques for fabricating high-quality vdWHs. Here, we demonstrate a general electrochemical strategy to prepare solution-processable high-quality vdWHs, in which electrostatic forces drive the stacking of electrochemically exfoliated individual assemblies with intact structures and clean interfaces into vdWHs with strong interlayer interactions. Thanks to the excellent combination of strong light absorption, interfacial charge transfer, and decent charge transport properties in individual layers, thin-film photodetectors based on graphene/In 2 Se 3 vdWHs exhibit great promise for near-infrared (NIR) photodetection, owing to a high responsivity (267 mA W −1 ), fast rise (72 ms) and decay (426 ms) times under NIR illumination. This approach enables various hybrid systems, including graphene/In 2 Se 3 , graphene/MoS 2 and graphene/MoSe 2 vdWHs, providing a broad avenue for exploring emerging electronic, photonic, and exotic quantum phenomena.

关键词： 2D Semiconductors Electrochemical Synthesis NIR Photodetectors Solution Processability Van Der Waals Heterostructures

来源：评论

学校读者我要写书评

暂无评论

Design of a novel ternary SRAM sense amplifier using CNFET 12

Design of a novel ternary SRAM sense amplifier using CNFET

引用

12th IEEE International Conference on Advanced Semiconductor Integrated circuits, ASICON 2017

作者： Liu, Zizhao Pan, Tao Jia, Song Wang, Uan Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics EECS Peking University No.5 Yiheyuan Road Haidian District Beijing100871 China

ISBN: (纸本)9781509066247

This paper presents a novel design of a ternary SRAM sense amplifier using carbon nanotube field-effect transistors (CNFETs). Chirality of CNFET is used to control the threshold voltage to realize the ternary logic. Simulation results using HSPICE shows that the proposed SRAM sense amplifier perform correctly at 0.9V supply voltage in the ternary SRAM read process. And it can achieve 87.5% and 88.5% enhancement in speed, 84.2% and 85.6% in PDP, compared with a ternary DRAM sense amplifier and the ternary SRAM without sense amplifier. © 2017 IEEE.

关键词： Carbon nanotube field effect transistors

来源：评论

学校读者我要写书评

暂无评论

Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress

引用

Chinese Physics B 2016年第12期25卷 507-513页

作者：张立忠王源何燕冬 Key Laboratory of Microelectronic Devices and Circuits (Ministry of Education)Institute of Microelectronics Peking University

The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier （DTSCR） is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing （TLP） test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor （CMOS） process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.

关键词： electrostatic discharge （ESD） diode-triggered silicon controlled rectifier （DTSCR） transmission-line-pulsing （TLP） mathematical modeling

来源：评论

学校读者我要写书评

暂无评论

基于纳米离子栅控的新型神经形态器件研究

基于纳米离子栅控的新型神经形态器件研究

引用

中国真空学会2018学术年会

作者： Yuchao Yang Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking UniversityBeijing 100871China

Nanoionics based devices and networks are intriguing candidates for the construction of new computing systems that could perform intelligent and energy-efficient *** this talk,I will discuss recent progresses in the development of neuromorphic devices and networks,as well as a few critical challenges existing in the mechanism,device and network levels that must be overcome[1-2].

关键词： Neuromorphic computing synaptic plasticity ionic gating diffusive dynamics

来源：评论

学校读者我要写书评

暂无评论

Design of a Novel Ternary SRAM Sense Amplifier Using CNFET

Design of a Novel Ternary SRAM Sense Amplifier Using CNFET

引用

2017 IEEE 12th International Conference on ASIC

作者： Zizhao Liu Tao Pan Song Jia Yuan Wang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsEECSPeking University

This paper presents a novel design of a ternary SRAM sense amplifier using carbon nanotube field-effect transistors(CNFETs).Chirality of CNFET is used to control the threshold voltage to realize the ternary *** results using HSPICE shows that the proposed SRAM sense amplifier perform correctly at 0.9 V supply voltage in the ternary SRAM read *** it can achieve 87.5% and 88.5% enhancement in speed,84.2% and 85.6% in PDP,compared with a ternary DRAM sense amplifier and the ternary SRAM without sense amplifier.

关键词： ternary CNFET sense amplifier

来源：评论

学校读者我要写书评

暂无评论

Author Correction: How to report and benchmark emerging field-effect transistors

引用

Nature Electronics 2022年 620页

作者： Zhihui Cheng Son T. Le Curt A. Richter Chin-Sheng Pang Zhihong Chen Joerg Appenzeller Peiqi Wang Xiangfeng Duan Yanqing Wu Davood Shahrjerdi Iuliana Radu Max C. Lemme Lian-Mao Peng Steven J. Koester Eric Pop Aaron D. Franklin Nanoscale Device Characterization Division National Institute of Standards and Technology Gaithersburg MD USA Department of Electrical and Computer Engineering Purdue University West Lafayette IN USA Theiss Research La Jolla CA USA Department of Chemistry and Biochemistry University of California Los Angeles Los Angeles CA USA School of Integrated Circuits Peking University Beijing China Electrical and Computer Engineering New York University Brooklyn NY USA Center for Quantum Phenomena Physics Department New York University New York NY USA IMEC Leuven Belgium RWTH Aachen University Chair of Electronic Devices Aachen Germany AMO GmbH Advanced Microelectronic Center Aachen Aachen Germany Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics Department of Electronics Peking University Beijing China Department of Electrical and Computer Engineering University of Minnesota Minneapolis MN USA Department of Electrical Engineering Stanford University Stanford CA USA Department of Electrical and Computer Engineering Duke University Durham NC USA Department of Chemistry Duke University Durham NC USA

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：