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检索条件"机构=Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics"
430 条 记 录,以下是201-210 订阅
排序:
Neuromorphic Computing: Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics (Adv. Mater. 21/2018)
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Advanced Materials 2018年 第21期30卷
作者: Jiadi Zhu Yuchao Yang Rundong Jia Zhongxin Liang Wen Zhu Zia Ur Rehman Lin Bao Xiaoxian Zhang Yimao Cai Li Song Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing 100871 China National Synchrotron Radiation Laboratory CAS Center for Excellence in Nanoscience University of Science and Technology of China Hefei Anhui 230029 China CAS Key Laboratory of Standardization and Measurement for Nanotechnology CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology Beijing 100190 China
来源: 评论
Vertical Transistors: Analog Circuit Applications Based on Ambipolar Graphene/MoTe2Vertical Transistors (Adv. Electron. Mater. 3/2018)
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Advanced Electronic Materials 2018年 第3期4卷
作者: Chen Pan Yajun Fu Jiaxin Wang Junwen Zeng Guangxu Su Mingsheng Long Erfu Liu Chenyu Wang Anyuan Gao Miao Wang Yu Wang Zhenlin Wang Shi-Jun Liang Ru Huang Feng Miao National Laboratory of Solid State Microstructures School of Physics Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China School of Material Science and Engineering Southwest University of Science and Technology Mianyang 621010 China Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing 100871 China
来源: 评论
Layout dependent BTI and HCI degradation in nano CMOS technology: A new time-dependent LDE and impacts on circuit at end of life
Layout dependent BTI and HCI degradation in nano CMOS techno...
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IEEE International Conference on Integrated Circuit Design and Technology (ICICDT)
作者: Pengpeng Ren Runsheng Wang Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China
In this paper, the newly-found time-dependent layout dependent effects (LDE) due to layout dependency of device aging is presented. BTI and HCI degradation in nanoscale HKMG devices exhibits evident layout dependency,... 详细信息
来源: 评论
A novel low-power and high-speed dual-modulus prescaler based on extended true single-phase clock logic
A novel low-power and high-speed dual-modulus prescaler base...
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International Symposium on circuits and Systems
作者: Song Jia Ziyi Wang Zijin Li Yuan Wang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University 100871 Beijing China
A novel low-power and high-speed dual-modulus prescaler based on extended true single-phase clock (E-TSPC) scheme is presented. By restricting the short-circuit current in noncritical branchs, the design reduces the m... 详细信息
来源: 评论
A New Static Power Clamp Co-designed with Input ESD Protection Circuit
A New Static Power Clamp Co-designed with Input ESD Protecti...
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2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
作者: Jian Wang Jian Cao Guangyi Lu Xing Zhang Yuan Wang School of Software and Microelectronics Peking University Key Laboratory of Microelectronic Devices and Circuits (MoE) Peking University
A new static power clamp circuit integrated with input ESD protection is proposed in this paper. By skillfully incorporating traditional input ESD protection, the proposed circuit replaces the protection resistor by t...
来源: 评论
Optimized spin-injection efficiency and spin MOSFET operation based on low-barrier ferromagnet/insulator/n-Si tunnel contact
arXiv
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arXiv 2017年
作者: Yang, Yang Wu, Zhenhua Yang, Wen Li, Jun Chen, Songyan Li, Cheng Department of Physics Semiconductor Photonics Research Center Xiamen University Xiamen361005 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Beijing Computational Science Research Center Beijing100089 China
We theoretically investigate the spin injection in different FM/I/n-Si tunnel contacts by using the lattice NEGF method. We find that the tunnel contacts with low barrier materials such as TiO2 and Ta2O5, have much lo... 详细信息
来源: 评论
Structural optimization of 4H-SiC BJT for ultraviolet detection with high optical gain  16th
Structural optimization of 4H-SiC BJT for ultraviolet detect...
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16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
作者: Bai, Yun Li, Cheng Zhan Shen, Hua Jun Tang, Yi Dan Liu, Xin Yu Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China Microwave Devices and Integrated Circuits Department The Institute of Microelectronics of Chinese Academy of Sciences Beijing China ZhuZhou CRRC Times Electric CO. LTD ZhuzhouHunan China
The 4H-SiC n-p-n BJT for ultraviolet detection with high optical gain is proposed and optimized in this paper. The effect of structural parameters of 4H-SiC phototransistor on the performance of the detectors is simul... 详细信息
来源: 评论
Design and optimization of AlGaN solar-blind double Heterojunction ultraviolet phototransistor  16th
Design and optimization of AlGaN solar-blind double Heteroju...
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16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
作者: Bai, Yun Shen, Huajun Li, Chengzhan Tang, Yidan Liu, Xinyu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China Microwave Devices and Integrated Circuits Department The Institute of Microelectronics of Chinese Academy of Sciences Beijing China ZhuZhou CRRC Times Electric CO. LTD. ZhuzhouHunan China
The n-p-i-n AlGaN solar-blind ultraviolet double heterojunction phototransistor (DHPT) with internal gain is proposed and optimized in this paper. The dependences of spectral responsivity and quantum gain on structure... 详细信息
来源: 评论
A wafer-level characterization method of ESD protection circuits for both component-level and system-level applications
A wafer-level characterization method of ESD protection circ...
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Asia-Pacific Symposium on Electromagnetic Compatibility (APEMC)
作者: Yuan Wang Guangyi Lu Xing Zhang Key Laboratory of Microelectronic Devices and Circuits (MoE) Institute of Microelectronics Peking University Beijing P.R. China
Electrostatic discharge (ESD) protection circuits are often designed with detection circuits to trigger clamp devices to bypass ESD currents. In order to fully characterize performance of these protection circuits, a ... 详细信息
来源: 评论
Delay-locked loop based frequency quadrupler with wide operating range and fast locking characteristics
Delay-locked loop based frequency quadrupler with wide opera...
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International Symposium on circuits and Systems
作者: Yuan Wang Yuequan Liu Mengyin Jiang Song Jia Xing Zhang Key Laboratory of Microelectronic Devices and Circuits (MoE) Institute of Microelectronics Peking University 100871 Beijing P.R. China
A wide operating range and fast locking delay-locked loop (DLL) based frequency quadrupler that includes an eight-phase-clock generator and an edge combiner is proposed. The eight-phase-clock generator is composed of ... 详细信息
来源: 评论