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检索条件"机构=Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics"
429 条 记 录,以下是221-230 订阅
排序:
Fabricating GeO_2 passivation layer by N_2O plasma oxidation for Ge NMOSFETs application
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Chinese Physics B 2014年 第6期23卷 538-541页
作者: 林猛 安霞 黎明 云全新 李敏 李志强 刘朋强 张兴 黄如 Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University
In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N20 plasma oxidation at 300 ℃. The GeO2/Ge interface is atomica... 详细信息
来源: 评论
Graphene: Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer (Small 35/2017)
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Small 2017年 第35期13卷
作者: Xiaolong Zhao Sen Liu Jiebin Niu Lei Liao Qi Liu Xiangheng Xiao Hangbing Lv Shibing Long Writam Banerjee Wenqing Li Shuyao Si Ming Liu Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Department of Physics Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam Application Wuhan University Wuhan 430072 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China
来源: 评论
A high frequency resolution digitally controlled oscillator with differential tapped inductor
A high frequency resolution digitally controlled oscillator ...
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IEEE International Symposium on circuits and Systems (ISCAS)
作者: Fan Yang Runhua Wang Xiaozhe Liu Junhua Liu Huailin Liao Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing Beijing CN
A novel architecture of high frequency resolution LC-tank based digitally controlled oscillator (DCO) is presented in this paper. The proposed architecture utilizes a differential tapped inductor and a capacitor array... 详细信息
来源: 评论
Impacts of Dimensions, Number of Layers and Contact Structures on the Loss of Graphene-based Coplanar Waveguides through Simulations
Impacts of Dimensions, Number of Layers and Contact Structur...
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2015 IEEE 16th International Conference on Communication Technology(ICCT 2015)
作者: Qiaofeng Qin Zidong Wang Yuehui Jia Pei Peng Xin Gong Liming Ren Yunyi Fu Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University
We present modeling and simulations of graphene coplanar waveguide(GCPW) under the frequency up to 50 GHz. Our simulation results show that the dimensions of GCPW greatly influence its insertion loss. In addition, dif... 详细信息
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A power efficient 1.0625–3.125 Gb/s serial transceiver in 130 nm digital CMOS for multi-standard applications
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Science China(Information Sciences) 2014年 第6期57卷 182-191页
作者: HOU ZhongYuan YANG Fan LIU JunHua ZHANG Xing Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University
A power-efficient and low-cost 1.0625–3.125 Gb/s serial transceiver is presented in this paper for Fiber Channel(FC),Peripheral Component Interconnect Express(PCIe),and RapidIO *** support multiple standards with a s... 详细信息
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Experimental clarification of orientation dependence of germanium PMOSFETs with Al_2O_3/GeO_x/Ge gate stack
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Chinese Physics B 2014年 第11期23卷 626-629页
作者: 云全新 黎明 安霞 林猛 刘朋强 李志强 张冰馨 夏宇轩 张浩 张兴 黄如 王阳元 Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University
An extensive and complete experimental investigation with a full layout design of the channel direction was carried out for the first time to clarify the orientation dependence of germanium p-channel metal-oxide-semic... 详细信息
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Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor
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Chinese Physics B 2014年 第11期23卷 616-619页
作者: 云全新 黎明 安霞 林猛 刘朋强 李志强 张冰馨 夏宇轩 张浩 张兴 黄如 王阳元 Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University
Nitrogen plasma passivation (NPP) on (111) germanium (Ge) was studied in terms of the interface trap density, roughness, and interfacial layer thickness using plasma-enhanced chemical vapor deposition (PECVD).... 详细信息
来源: 评论
A Low-Power High-Speed 32/33 Prescaler Based on Novel Divide-by-4/5 Unit with Improved True Single-Phase Clock Logic
A Low-Power High-Speed 32/33 Prescaler Based on Novel Divide...
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IEEE International Symposium on circuits and Systems
作者: Song Jia Shilin Yan Yuan Wang Ganggang Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 CHINA
In this work, new design techniques that aim to reduce power consumption of true single-phase clock-based (TSPC) prescalers is presented. The structure of divide-by-4/5 frequency divider is simplified, and its perform... 详细信息
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Human body channel energy harvesting scheme with −22.5 dBm sensitivity 25.87% efficiency threshold-compensated rectifier
Human body channel energy harvesting scheme with −22.5 dBm ...
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IEEE International Symposium on circuits and Systems (ISCAS)
作者: Jiayi Wang Yongan Zheng Shi Wang Maoqiang Liu Huailin Liao Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China
A novel human body channel (HBC) energy harvesting scheme for body sensor networks (BSNs) is proposed in this paper. Human body channel is utilized innovatively as energy transmission medium to reduce the transmission... 详细信息
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A 0.5-2 GHz High Frequency Selectivity RF Front-End with Series N-path Filter
A 0.5-2 GHz High Frequency Selectivity RF Front-End with Ser...
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IEEE International Symposium on circuits and Systems
作者: Ying Guo Ling Shen Fan Yang Yongan Zheng Long Chen Xing Zhang Huailin Liao Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing 100871 China
This paper presents a 0.5-2GHz RF front-end with Series N-path Filter. With series 8-path filter applied, an ultimate rejection larger than 46 dB with 30 dB out-of-band rejection at 50 MHz offset is achieved. Dynamic ... 详细信息
来源: 评论