检索结果-内蒙古大学图书馆

High temperature behavior of multi-region direct current current-voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal-oxide-semiconductor field-effect-transistors reliability

High temperature behavior of multi-region direct current cur...

引用

作者： He, Yandong Zhang, Ganggang Zhang, Xing Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing 100871 China

With the process compatibility with the mainstream standard complementary metal-oxide-semiconductor (CMOS), shallow trench isolation (STI) based laterally diffused metal-oxide-semiconductor (LDMOS) devices have become popular for its better tradeoff between breakdown voltage and performance, especially for smart power applications. A multi-region direct current current-voltage (MR-DCIV) technique with spectroscopic features was demonstrated to map the interface state generation in the channel, accumulation and STI drift regions. High temperature behavior of MR-DCIV spectroscopy was analyzed and a physical model was verified. Degradation of STI-based LDMOS transistors under high temperature reverse bias (HTRB) stress is experimentally studied by MR-DCIV spectroscopy. The impact of interface state location on device electrical characteristics was investigated. Our results show that the major contribution to HTRB degradation, in term of the on-resistance degradation, was attributed to interface state generation under STI drift region. © 2014 The Japan Society of Applied Physics.

关键词： Interface states

来源：评论

学校读者我要写书评

暂无评论

Formation energy study of oxygen vacancies in undoped, aluminum-doped and nitrogen-doped TaOx-based RRAM by first principle simulation

Formation energy study of oxygen vacancies in undoped, alumi...

引用

作者： Deng, Haopei Cai, Yimao Yu, Muxi Huang, Ru Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 China

ISBN: (纸本)9781607685395

Formation and transfer of oxygen vacancies are essential to transitional metal oxide RRAM's switching behavior. In this paper, first principle is used to simulate the formation energy of oxygen vacancies in undoped, Al-doped and N-doped TaOx based RRAM. In Al-doped TaOx, oxygen vacancies' formation energy is reduced significantly near the dopant atom. However, in N-doped TaOx, the formation energy of oxygen vacancies is slightly decreased compared with the undoped one. Our simulation results provide insight and guidance on the approach to improving RRAM's performance by doping atoms. © 2014 The Electrochemical Society.

关键词： RRAM

来源：评论

学校读者我要写书评

暂无评论

Investigation of passivation of Ge substrate by N2O plasma and N2 plasma treatment

Investigation of passivation of Ge substrate by N2O plasma a...

引用

作者： Lin, M. Li, M. An, X. Yun, Q. Li, M. Li, Z. Liu, P. Zhang, B. Zhang, X. Huang, R. Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 China

ISBN: (纸本)9781607685395

In this paper, passivation of Ge substrates by N2O plasma is proposed and compared with a N2 plasma treatment. Results show that both N2O and N2 plasma treatments can improve the quality of the interface between the high K dielectric and the Ge substrate, as validated by the CV characteristics of MOS capacitors. Results show that, stoichiometric GeO2 is achieved by a N2O plasma oxidation and GeOxNy is formed by the N2 plasma treatment, due to a native oxide residue or oxidation after aqueous cleaning. Compared to GeOxNy passivation, a GeO2 passivation is superior in reducing the interface state density to ∼2 × 1011cm-2eV-1, suppressing EOT degradation and modulating the surface potential, which is promising for high performance Ge NMOSFETs fabrication. © 2014 The Electrochemical Society.

关键词： Passivation

来源：评论

学校读者我要写书评

暂无评论

Optimization of ohmic contact for InP-based transferred electronic devices

引用

Journal of Semiconductors 2014年第3期35卷 158-162页

作者：武德起丁武昌杨姗姗贾锐金智刘新宇 Key Laboratory of Microelectronics Devices & Integrated Technology Microwave Devices and Integrated Circuits Department Institute of Microelectronics Chinese Academy of Sciences School of Physics and Electrical Information Science Ningxia University

The effect of the annealing time and annealing temperature on Ni/Ge/Au electrode contacts deposited on the n-type InP contact layer has been studied using a circular transmission line model. The minimum specific contact resistance of 3.210 7 cm2was achieved on the low-doped n-type InP contact layer with a 40 s anneal at 425 ℃. In order to improve the ohmic contact and reduce the difficulty in the fabrication of the high doped InP epi-layer, the doping concentration in the InP contact layer was chosen to be 51018cm 3in the fabrication of transferred electronic devices. Excellent differential negative resistance properties were obtained by an electron beam evaporating the Ni/Ge/Au/Ge/Ni/Au composite electrode on an InP epi-layer with a 60 s anneal at 380 ℃.

关键词： circular transmission line model specific contact resistance InP transferred electronic devices differential negative resistance

来源：评论

学校读者我要写书评

暂无评论

Strain affected electronic properties of bilayer tungsten disulfide

Strain affected electronic properties of bilayer tungsten di...

引用

作者： Xin, Zheng Zeng, Lang Wang, Yijiao Wei, Kangliang Du, Gang Kang, Jinfeng Liu, Xiaoyan Peking University Shenzhen Graduate School Shenzhen 518055 China Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 China

The strain effect on the electronic properties of bilayer tungsten disulfide (WS2) is investigated by density functional theory (DFT). It is found that the band gap and carrier effective masses of AA and AB stacking bilayer WS2 decrease with increasing tensile strain. However, their band gap first increases under small compressive strain and then decreases with large compressive strain applied. These results can be explained by the interplay between the projected density of states contributed by the p-orbital of sulfur (S) atoms and those contributed by the d-orbital of tungsten (W) atoms. To measure this interaction quantitatively, a parameter N is proposed in our work. This work could serve as a guideline for the future manipulation of the electronic properties of WS2. © 2014 The Japan Society of Applied Physics.

关键词： Tungsten compounds

来源：评论

学校读者我要写书评

暂无评论

The beat-frequency circuit for monitoring duty-cycle shift based on BTI effect 12

The beat-frequency circuit for monitoring duty-cycle shift b...

引用

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

作者： Qiao, Fang He, Yandong Zhang, Ganggang Zhang, Xing Peking University Shenzhen Graduate School Shenzhen518055 China Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing100871 China

ISBN: (纸本)9781479932962

Circuit reliability issues have great attention to the researchers, especially bias temperature instability (BTI). Obviously, the threshold voltage of the device degraded when the MOS is in the stress mode. For CMOS digital circuits, duty cycle of the signal can shift. In this paper, the beat-frequency circuit design has been verified by the duty-cycle shift of buffer chain. The two ring oscillators (RO) with the same size as the comparison circuit, and the output as the beat frequency to measure the duty-cycle shift, where one is stressed, and the other is unstressed. We found that the duty-cycle increases as the stress time increases. The circuit is demonstrated by using the SMIC 65nm, 1.2V technology. © 2014 IEEE.

关键词： Threshold voltage

来源：评论

学校读者我要写书评

暂无评论

An efficient test structure for interface trap characterization under BTI stresses

An efficient test structure for interface trap characterizat...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Yandong He Ganggang Zhang Lin Han Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing CHINA

ISBN: (纸本)9781479932849

An efficient test structure for interface trap density characterization has been proposed. Based on this single structure and one-time IV measurement, the interface trap densities on both n- and p-type Si/SiO 2 interfaces are obtained, achieving 1x efficiency improvement and 50% cost reduction. BTI-stress-induced degradation was studied and compared under the same structure, demonstrating a better test efficiency and resolution to interface traps generation at different Si/SiO 2 interfaces.

关键词： Logic gates Current measurement Area measurement Abstracts Performance evaluation Substrates Reliability

来源：评论

学校读者我要写书评

暂无评论

Understanding of self-heating enhanced degradation in pLDMOSFETs by MR-DCIV method

Understanding of self-heating enhanced degradation in pLDMOS...

引用

International Symposium on Physical & Failure Analysis of Integrated circuits

作者： Yandong He Ganggang Zhang Xing Zhang Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing P.R. China

Self-heating enhanced degradation in pLDMOSFETs was studied by non-destructive MR-DCIV method. Due to self-heating effect in pLDMOSFETs, several times larger MR-DCIV degradation per finger was observed for multi-finger devices with higher temperature rise and less channel edge heat dissipation. Our study has shown that self-heating induced degradation shared the similar trends and mechanism to NBTI.

关键词： Stress Degradation Fingers Logic gates Interface states Voltage measurement Temperature measurement

来源：评论

学校读者我要写书评

暂无评论

A TDC based process variation sensor for both NMOS and PMOS variation monitoration

A TDC based process variation sensor for both NMOS and PMOS ...

引用

IEEE Conference on Electron devices and Solid-State circuits

作者： Lei Ai Yandong He Ganggang Zhang Xing Zhang Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing P. R. China

ISBN: (纸本)9781479923366

A TDC based process variation sensing circuit for monitoring the variation of both NMOS and PMOS is proposed. The digital outputs of this sensor can offer the circuit designer clear message that indicates the variation of both NMOS and PMOS. Based on the specific inverter chain design concept, this sensor demonstrated with better sensitivity. 10000 Monte Carlo Simulation based on 65nm bulk CMOS process technology is used to verify the feasibility of this sensor.

关键词： Logic gates MOS devices Monitoring

来源：评论

学校读者我要写书评

暂无评论

Towards single-trap spectroscopy: Generation-recombination noise in UTBOX SOI nMOSFETs

引用

Physica Status Solidi (C) Current Topics in Solid State Physics 2015年第3期12卷 292-298页

作者： Simoen, Eddy Cretu, Bogdan Fang, Wen Aoulaiche, Marc Routoure, Jean-Marc Carin, Regis dos Santos, Sara Luo, Jun Zhao, Chao Martino, Joao Antonio Claeys, Cor Imec Kapeldreef 75 Leuven3001 Belgium Department of Solid-State Sciences Ghent University Gent Belgium ENSICAEN and CNRS UMR 6072 GREYC Caen14050 France Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China E.E. Department KU Leuven Leuven Belgium Presently at Micron Technology Belgium Imec Campus Belgium University of Caen UMR 6072 GREYC Caen14050 France LSI/ PSI/USP University of São Paulo SP Brazil

An overview is given on the possibilities of using generation-recombination (GR) noise as a tool for defect spectroscopy in semiconductor materials and devices. The method is illustrated by n-channel MOSFETs fabricated on silicon-on-insulator (SOI) substrates with an ultra-thin buried oxide (UTBOX). As will be shown, the use of fully depleted (FD) UTBOX devices offers some unique opportunities and challenges. In the first instance, one can apply the standard GR noise spectroscopy in function of the temperature to derive the relevant deep-level parameters like the activation energy, the capture cross section and the concentration. In addition, some new type of spectroscopy can be applied to defects in the silicon film by exploiting the front- and/or back-gate bias dependence of the Lorentzian noise parameters. Finally, it is shown that for small geometry transistors the GR noise is generated by one or only a few centres. This becomes obvious in the time domain, where the channel current exhibits random telegraph signal (RTS) fluctuations. The up and down time constants and the relative RTS amplitude can be used to derive the GR centre parameters and, moreover, its spatial location, when combined with numerical device simulations. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

关键词： Activation energy

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：