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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012

作者： Tan, Fei An, Xia Huang, Liangxi Zhang, Xing Ru, Huang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University 100871 Beijing China

ISBN: (纸本)9781467324724

In this paper, heavy-ion-induced permanent damage in fully depleted silicon-on-insulator (FD SOI) devices are investigated. After exposure to heavy ions, the characteristics degradation of FD SOI nMOSFET are presented, which is due to the microdose effect in the oxide layer and the displacement damage in silicon film. Besides, the measured results also exhibit strong device geometry dependence. The electrical properties degradation such as the off-state leakage current and the on-state current become more serious with the gate length or gate width decreasing, which indicates that the heavy-ion-induced damage in ultra-deep submicron FD SOI devices can not be ignored and should be paid more attention for radiation hardened applications. © 2012 IEEE.

关键词： Heavy ions

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Enhanced nitrogen plasma immersion passivation method for high-K/Ge stack formation

Enhanced nitrogen plasma immersion passivation method for hi...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012

作者： Lin, Meng Yun, Quanxin Li, Min Li, Zhiqiang An, Xia Li, Ming Zhang, Xing Ru, Huang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 China

ISBN: (纸本)9781467324724

In this paper, an enhanced Ge surface passivation method by nitrogen plasma immersion with adding RIE power is presented and experimentally demonstrated. With the acceleration effect resulting from electric field induced by proper RIE power, more nitrogen plasma will drift to Ge surface to passivate the dangling bonds. It is shown that nitrogen plasma immersion with RIE power is efficient in suppressing Ge suboxide growth during high-K dielectric deposition, reducing interface states and improving the C-V characteristic of both p-MOS and n-MOS capacitors in terms of flat-band voltage and hysteresis. © 2012 IEEE.

关键词： Interface states

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Contact size scaling of a W-contact phase-change memory cell based on numerical simulation

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Journal of Semiconductors 2012年第10期33卷 53-57页

作者：魏益群林信南贾宇超崔小乐张兴宋志棠 Key Laboratory of Integrated Microsystems Shenzhen Graduate School of Peking University TSRC Key Laboratory of Microelectronic Devices and CircuitsInstitute of MicroelectronicsSchool of Electronics and Computer SciencePeking University State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences

In the design of phase-change memory（PCM）,it is important to perform numerical simulations to predict the performances of different device *** work presents a numerical simulation using a coupled system including Poisson＇s equation,the current continuity equation,the thermal conductivity equation,and phase-change dynamics to simulate the thermal and electric characteristics of phase-change *** method discriminates the common numerical simulation of PCM cells,from which it applies Possion＇s equation and current continuity equations instead of the Laplace equation to depict the electric characteristics of PCM cells,which is more adoptable for the semiconductor characteristics of phase-change *** results show that the simulation agrees with the measurement,and the scalability of PCM is predicted.

关键词： phase-change memory scaling numerical simulation

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A switched-capacitor single-ended to differential stage for A/D conversion of IRFPA ROIC

A switched-capacitor single-ended to differential stage for ...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012

作者： Chen, Meng Lu, Wengao Wang, Guannan Fang, Ran Zhang, Yacong Chen, Zhongjian Ji, Lijiu Key Laboratory of Microelectronic Devices and Circuit Department of Microelectronics Peking University Beijing 100871 China

ISBN: (纸本)9781467324724

This paper presents a Switched-Capacitor Single-ended to Differential (SC-STD) stage for A/D conversion of an Infrared Focal Plane Array (IRFPA) Readout Integration Circuit(ROIC). The SC-STD stage converts the output of the Capacitive Trans-Impedance Amplifier (CTIA) into differential signals, which can be used as the input of the subsequent A/D conversion. A novel Switched-Capacitor Common-Mode Feedback (SC-CMFB) technique with only two capacitors and single phase clock is proposed. Performances of the SC-STD stage are verified by a 14-bit column-paralleled Successive-Approximation A/D converter which is fabricated in a 0.35um CMOS-based process technology. The SFDR of the A/D converter is up to 93dB at a sampling clock of 31.25 KHz with an input signal of 1.009 KHz. The THD of the SC-STD circuit is up to -94dB at a 1V Vpp input of 1.009 KHz. © 2012 IEEE.

关键词： Clocks

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Time Divided Architecture for Closed Loop MEMS Capacitive Accelerometer

Time Divided Architecture for Closed Loop MEMS Capacitive Ac...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Jingqing Huang Tingting Zhang Meng Zhao Lichen Hong Yacong Zhang Wengao Lu Zhongjian Chen Yilong Hao Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University

This paper mainly discusses issues concerning the architecture of time divided closed loop accelerometer. For this particular architecture mathematical relationship between the external acceleration detected by sensor and the voltage output of the readout circuits is deduced. Both Matlab/Simulink model and Verilog-A model for such architecture are *** results agree with the mathematical *** circuits designed to work under 50kHz with feedback duty cycle ηbeing 60% are fabricated using 0.35μm HV CMOS *** results show a sensitivity of 1.518V/g.

关键词： Mathematical model Force Integrated circuit modeling Accelerometers Electrostatics MATLAB

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A SPICE model for a phase-change memory cell based on the analytical conductivity model

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Journal of Semiconductors 2012年第11期33卷 52-56页

作者：魏益群林信南贾宇超崔小乐何进张兴 The Key Laboratory of Integrated Microsystems Shenzhen Graduate School of Peking University Peking University Shenzhen SOC Key Laboratory PKU-HKUSTShenzhen-Hong Kong Institute The Kev Laboratorv of Integrated Microsvstems.Shenzhen Graduate School of Peking University Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsSchool of Electronics and Computer SciencePeking University

By way of periphery circuit design of the phase-change memory,it is necessary to present an accurate compact model of a phase-change memory cell for the circuit *** with the present model,the model presented in this work includes an analytical conductivity model,which is deduced by means of the carrier transport theory instead of the fitting model based on the *** addition,this model includes an analytical temperature model based on the 1D heat-transfer equation and the phase-transition dynamic model based on the JMA equation to simulate the phase-change *** above models for phase-change memory are integrated by using Verilog-A language,and results show that this model is able to simulate theⅠ-Ⅴcharacteristics and the programming characteristics accurately.

关键词： phase-change memory compact model analytical conductivity

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Enhanced Nitrogen Plasma Immersion Passivation Method for High-K/Ge Stack Formation

Enhanced Nitrogen Plasma Immersion Passivation Method for Hi...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Meng Lin Quanxin Yun Min Li Zhiqiang Li Xia An Ming Li Xing Zhang Ru Huang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

In this paper,an enhanced Ge surface passivation method by nitrogen plasma immersion with adding RIE power is presented and experimentally demonstrated. With the acceleration effect resulting from electric field induced by proper RIE power,more nitrogen plasma will drift to Ge surface to passivate the dangling *** is shown that nitrogen plasma immersion with RIE power is efficient in suppressing Ge suboxide growth during high-K dielectric deposition,reducing interface states and improving the C-V characteristic of both p-MOS and n-MOS capacitors in terms of flat-band voltage and hysteresis.

关键词： MOS RIE Enhanced Nitrogen Plasma Immersion Passivation Method for High-K/Ge Stack Formation

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A Radiation Detection Readout Circuit with Current Feedback Baseline Holder

A Radiation Detection Readout Circuit with Current Feedback ...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Xiao-Lu Chen Ya-Cong Zhang Wen-Gao Lu Zhong-Jian Chen Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

This paper describes a radiation detection readout circuit for portable dosimeter which is aimed at low power,low noise and high counting rate.A current feedback baseline holder circuit is proposed to solve the baseline shift problem without any other performance *** core circuit has been implemented in 0.35μm CMOS *** achieves 46mV/fC conversion gain,200kcps counting rate and consumes 260μA current from 3.3V *** no detector is connected to the chip,the equivalent input noise charge is 0.094fC rms.

关键词： A Radiation Detection Readout Circuit with Current Feedback Baseline Holder

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Investigation on Channel Hot Carrier Degradation of Ultra Deep Submicron SOI pMOSFETs

Investigation on Channel Hot Carrier Degradation of Ultra De...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Liang-Xi Huang Xia An Fei Tan Wei-Kang Wu Ru Huang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

ISBN: (纸本)9781467324748

The bias dependence of Channel Hot Carrier (CHC)degradation in 0.18μm SOI pMOSFETs is investigated in this *** classical bias modes (Vg@Isubmax and Vg=Vd)were applied to analyze the CHC degradation behavior of SOI *** results show that at low Vg,hot carriers injection produced by impact ionization is the main factor contributed to ***,the degradation stressed at high Vg is controlled by both CHC and NBTI effect,showing the NBTI-like behavior at room temperature which indicates that NBTI effect is the dominant factor.A possible mechanism is put forward to explain the enhanced CHC degradation under Vg=Vd compared with pure NBTI *** influence of floating body on the performance degradation of PDSOI devices is also investigated.

关键词： SOI CHC Investigation on Channel Hot Carrier Degradation of Ultra Deep Submicron SOI pMOSFETs

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Reactive Ion Etching of Germanium Using SF6/CHF3/He gas mixture

Reactive Ion Etching of Germanium Using SF6/CHF3/He gas mixt...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Min Li Meng Lin Quanxin Yun Zhiqiang Li Xia An Ming Li Xing Zhang Ru Huang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

The effect of CHF3 gas flow rate on the trench shape and etch rate was studied for germanium-based device *** this study,a sidewall tilt angle larger than 80°with the trench depth of 300nm was achieved by optimizing the flow rate ratio of SF6/CHF3/He gas ***,based on the experimental results,a Linear Reactive Ion Etching(RIE) Model was proposed to predict the optimized composition of the SF6/CHF3/He gas mixture to obtain steep trenches with low etch rate,which may provide the guideline for the germanium etching process design.

关键词： RIE Reactive Ion Etching of Germanium Using SF6/CHF3/He gas mixture CHF

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