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Low power readout circuit for 384×288 uncooled IRFPA with novel readout stage

Low power readout circuit for 384×288 uncooled IRFPA with n...

引用

IEEE Conference on Electron devices and Solid-State circuits

作者： Xiangyun Meng Yacong Zhang Sanlin Liu Meng Chen Wengao Lu Zhongjian Chen Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University Beijing China

A readout integrated circuit for 384×288 uncooled infrared focal plane array (IRFPA) is presented in this paper. To overcome the kickback to sample and hold stage with less power consumption, a novel readout stage of a Class AB op-amp with input stage in each column and sharing one cascode output stage is introduced. This IRFPA readout circuit has been designed and fabricated in 0.35um CMOS technology. The readout speed of the circuit can reach 7MHz, the dynamic range is 86.5dB and power consumption is 108mW. A 32×32 experimental chip has been verified by test results.

关键词： Power demand Bolometers Arrays Capacitance Dynamic range Crosstalk Simulation

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A Power Clamp Circuit Using Current Mirror for On-chip ESD Protection

A Power Clamp Circuit Using Current Mirror for On-chip ESD P...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Guangyi Lu Yuan Wang Xuelin Zhang Song Jia Ganggang Zhang Xing Zhang Key Laboratory of Microelectronic Devices and Circuits(MoE) Institute of Microelectronics Peking University

ISBN: (纸本)9781467324748

A power clamp circuit using current mirror is proposed in this *** current mirror is used for capacitance multiplication in the proposed circuit. Besides,the proposed circuit has different turn-on and turn-off paths towards clamp transistor and it employs a non-traditional phase inverter in the turn-on path of clamp *** results verify that the proposed circuit has enhanced ability to discharge static charges during an ESD event while making the ESD pulse detection CR time constant notably *** the reduction of CR time constant,the proposed circuit has better immunity to mis-triggering and is less chip area-consuming.

关键词： Electrostatic discharge(ESD),power clamp circuit,current mirror,mis-triggering

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A Switched-Capacitor Single-ended to Differential Stage for A/D Conversion of IRFPA ROIC

A Switched-Capacitor Single-ended to Differential Stage for ...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Meng Chen Wengao Lu Guannan Wang Ran Fang Yacong Zhang Zhongjian Chen Lijiu Ji Key laboratory of Microelectronic Devices and Circuit Department of MicroelectronicsPeking University

ISBN: (纸本)9781467324748

This paper presents a Switched-Capacitor Single-ended to Differential（SC-STD）stage for A/D conversion of an Infrared Focal Plane Array（IRFPA）Readout Integration Circuit（ROIC）.The SC-STD stage converts the output of the Capacitive Trans-Impedance Amplifier（CTIA）into differential signals,which can be used as the input of the subsequent A/D conversion.A novel Switched-Capacitor Common-Mode Feedback（SC-CMFB）technique with only two capacitors and single phase clock is proposed. Performances of the SC-STD stage are verified by a 14-bit column-paralleled Successive-Approximation A/D converter which is fabricated in a 0.35um CMOS-based process *** SFDR of the A/D converter is up to 93dB at a sampling clock of 31.25 KHz with an input signal of 1.009 *** THD of the SC-STD circuit is up to -94dB at a 1V Vpp input of 1.009 KHz.

关键词： proposed fabricated sampling

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An Offset-compensated Switched-Capacitor Interface Circuit for Closed-loop MEMS Capacitive Accelerometer

An Offset-compensated Switched-Capacitor Interface Circuit f...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Ting-Ting Zhang Hao-Jiong Li Jing-Qing Huang Meng Zhao Li-Chen Hong Ya-Cong Zhang Wen-Gao Lu Zhong-Jian Chen Key Laboratory of Microelectronic Devices and Circuit Department of MicroelectronicsPeking University

This paper presents a switched-capacitor readout circuit designed for the closed-loop MEMS capacitive accelerometer with a full scale of±*** offset voltage of amplifiers is compensated and the low-frequency noise is reduced by using CDS technique, thus the precision of the whole system is significantly *** chip has been fabricated in a 0.35μm 15V CMOS technology and the equivalent noise acceleration (ENA)of the whole accelerometer system is tested to be 950ng/Hz(1/2) at 120Hz in atmosphere.

关键词： Accelerometers Micromechanical devices Equations Sensors Mathematical model Noise Switching circuits

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A Closed-loop System with DC Sensing Method for Vibratory Gyroscopes

A Closed-loop System with DC Sensing Method for Vibratory Gy...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Tingting Tao Wengao Lu Ran Fang Yacong Zhang Zhongjian Chen Department of Microelectronics Peking University Key laboratory of Microelectronic Devices and Circuit

The paper presents a closed-loop system scheme with DC sensing method for vibratory gyroscopes.A DC sensing method is employed to convert the amplitude-modulated capacitive signal to *** system realizes a closed-loop control in the driving mode.A high voltage(HV)drive signal which is compatible with the gyro is obtained by the on-chip level *** ASIC occupies 2.5×2.0mm 2 in a 0.35μm BCD *** system requires a differential supply of±12V and can work under a resonant frequency from 3 to 10 kHz.

关键词： CSA kHz A Closed-loop System with DC Sensing Method for Vibratory Gyroscopes

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Three-dimensional modeling of AlGaN/GaN HEMT including electro-thermal coupling effects

Three-dimensional modeling of AlGaN/GaN HEMT including elect...

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International Workshop on Microwave and Millimeter Wave circuits and System Technology (MMWCST)

作者： Jianhui Wang Xinhua Wang Lei Pang Xiaojuan Chen Xin Kong Xinyu Liu Microwave Devices and Integrated Circuits Department Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

Thermal performance of AlGaN/GaN HEMT is a critical issue during the design stage, since it significantly affect the lifetime of the device. This paper introduces a three-dimensional modeling technique including electro-thermal coupling effects for investing the thermal characteristic of the AlGaN/GaN HEMT. The method achieves a good balance between simulation time and accuracy through iterative calculation between the 2D and 3D model.

关键词： Gallium nitride Solid modeling Aluminum gallium nitride HEMTs Temperature measurement Logic gates Silicon carbide

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Dislocation induced nonuniform surface morphology of Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN HEMTs

Dislocation induced nonuniform surface morphology of Ti/Al/N...

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International Workshop on Microwave and Millimeter Wave circuits and System Technology (MMWCST)

作者： Xin Kong Ke Wei Guoguo Liu Jianhui Wang Xinyu Liu Microwave Devices and Integrated Circuits Department Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

In this study, Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors was fabricated and demonstrated distribution of bright and dark areas on the surface. Surface element analyses show that it is of great difference in the Ni and Au content between these two kinds of regions. According to transmission electron microscopy and corresponding Electron dispersive x-ray spectroscopy analyses, plenty of Ni was detected in dislocation rich regions while rare Ni was left in dislocation free regions so that Au tended to accumulate in the form of AlAu x binary alloy. The surface nonuniformity presented on the surface should be attributed to the nonuniform interfacial reactions resulted from the dislocations.

关键词： Aluminum gallium nitride Gallium nitride Surface morphology Nickel Gold Ohmic contacts

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A wide dynamic range transimpedance amplifier with high gain-bandwidth product for 10 Gb/s optical links

A wide dynamic range transimpedance amplifier with high gain...

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International Workshop on Microwave and Millimeter Wave circuits and System Technology (MMWCST)

作者： Fan Jiang Jianwu Chen Danyu Wu Jin Wu Zhi Jin Xinyu Liu Microwave Devices and Integrated Circuits Department Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

This paper presents the design method and implementation of a wide dynamic range transimpedance amplifier (TIA) with high gain-bandwidth product (GBW) based on 1μm GaAs process of WIN company. The wide dynamic range results from the utilization of a parallel feedback structure that divides the input current when it is large. And the high GBW owes to the limiting amplifier (LA) which functions as a gain stage based on a modified Cherry-Hopper amplifier. The proposed TIA achieves a maximum input current of 3.5 mA and a transimpedance of 68.6 dBΩ and a bandwidth of 10.9 GHz.

关键词： Bandwidth Resistors Dynamic range Noise Limiting Gain Optical receivers

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A Design of Readout Circuit for 384×288 Uncooled Microbolometer Infrared Focal Plane Array

A Design of Readout Circuit for 384×288 Uncooled Microbolom...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： San-Lin Liu Ya-Cong Zhang Xiang-Yun Meng Wen-Gao Lu Zhong-Jian Chen Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University

ISBN: (纸本)9781467324748

A readout integrated circuit（ROIC）for uncooled infrared focal plane array（IRFPA）is presented in this *** ROIC is designed for a 384×288 detector array made of amorphous silicon microbolometers with a pixel-pitch of 35μm.A capacitive trans-impedance amplifier（CTIA）is used in each column to integrate the pixel *** design is tuned on a detailed theoretical analysis of the sensor signal and noise *** chip has been fabricated using a 0.35μm 2P4M CMOS process under 5V supply *** ROIC can operate at a data rate of 7MHz,achieving a frame rate of 60Hz and the total power dissipation is less than 108mW.A 32×32 experimental chip has been tested.

关键词： process dissipation experimental

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Radiation Detector Readout Circuit with Two-stage Charge Sensitive Amplifier

Radiation Detector Readout Circuit with Two-stage Charge Sen...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Ya-Cong Zhang Xiao-Lu Chen Wen-Gao Lu Zhong-Jian Chen Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

ISBN: (纸本)9781467324748

A two-stage charge sensitive amplifier structure suitable for silicon radiation detector with large capacitance is *** has the advantage that the integration capacitor can be large to reduce the gain sensibility to detector capacitance variation without any stability *** feasibility of the proposed circuit is verified by comparing the simulation results with the conventional one-stage charge sensitive amplifier.A prototype of 16-channel readout circuit for electron collection has been taped out in a 0.35μm CMOS technology with a power supply of *** area is 2.5×1.54mm 2 with 42 pads and the power dissipation is 60mW.

关键词： CSA Radiation Detector Readout Circuit with Two-stage Charge Sensitive Amplifier

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