检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

303 篇 会议
126 篇 期刊文献

馆藏范围

429 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

306 篇 工学
- 198 篇 电子科学与技术（可...
- 87 篇 材料科学与工程（可...
- 51 篇 电气工程
- 45 篇 计算机科学与技术...
- 30 篇 化学工程与技术
- 22 篇 仪器科学与技术
- 19 篇 信息与通信工程
- 17 篇 控制科学与工程
- 13 篇 机械工程
- 13 篇 软件工程
- 12 篇 光学工程
- 10 篇 动力工程及工程热...
- 7 篇 冶金工程
- 5 篇 生物医学工程（可授...
- 4 篇 力学（可授工学、理...
- 4 篇 生物工程
- 4 篇 安全科学与工程
- 3 篇 环境科学与工程（可...
- 2 篇 核科学与技术
85 篇 理学
- 56 篇 物理学
- 30 篇 化学
- 17 篇 数学
- 4 篇 生物学
- 4 篇 系统科学
- 2 篇 统计学（可授理学、...
23 篇 管理学
- 18 篇 管理科学与工程(可...
- 4 篇 图书情报与档案管...
- 2 篇 工商管理
2 篇 军事学
- 2 篇 军队指挥学
1 篇 经济学
1 篇 法学
1 篇 医学
1 篇 艺术学

主题

30 篇 logic gates
28 篇 microelectronics
19 篇 switches
17 篇 cmos technology
16 篇 silicon
16 篇 clocks
15 篇 simulation
15 篇 transistors
14 篇 capacitors
11 篇 cmos integrated ...
11 篇 electrodes
11 篇 mosfets
10 篇 power demand
10 篇 threshold voltag...
10 篇 performance eval...
9 篇 circuit simulati...
9 篇 voltage
9 篇 noise
9 篇 power dissipatio...
8 篇 random access me...

机构

230 篇 key laboratory o...
29 篇 university of ch...
20 篇 key laboratory o...
13 篇 key laboratory o...
12 篇 department of el...
12 篇 institute of mic...
11 篇 key laboratory o...
11 篇 key laboratory o...
11 篇 school of softwa...
9 篇 peking universit...
9 篇 department of el...
8 篇 frontier institu...
7 篇 access – ai chip...
7 篇 key laboratory o...
6 篇 high-frequency h...
6 篇 frontiers scienc...
5 篇 peking universit...
5 篇 school of microe...
5 篇 state key labora...
5 篇 college of compu...

作者

77 篇 ru huang
55 篇 xing zhang
54 篇 yuan wang
37 篇 song jia
29 篇 wengao lu
28 篇 zhongjian chen
25 篇 yacong zhang
25 篇 ming li
17 篇 xia an
16 篇 xiaoyan liu
16 篇 runsheng wang
16 篇 lijiu ji
16 篇 yangyuan wang
16 篇 wang yuan
16 篇 zhang xing
16 篇 lu wengao
16 篇 jia song
15 篇 qi liu
15 篇 qianqian huang
15 篇 huailin liao

语言

402 篇 英文
15 篇 中文
10 篇 其他
2 篇 法文

检索条件"机构=Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics"

共 429 条记录，以下是401-410 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

A new configuration scheme for delay test in non-simple LUT FPGA designs

A new configuration scheme for delay test in non-simple LUT ...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Botao Sun Jianhua Feng Teng Lin Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University China

ISBN: (纸本)9781424421855

With the increased use of FPGA in widespread applications, its¿ size and speed has been rapidly increased, so more and more problems associated with performance defects are emerging. Performance defects such as delay defects will not lead to a functional fault, but will limit the frequency of the system. Only Stuck-at testing has not been sufficient to guarantee the reliability and quality, so testing delay fault becomes necessary. In this paper, in order to improve the efficiency and coverage of delay test, we first select the most suitable delay fault model for FPGAs, which is a good simulation for the actual situation. At the same time we proposed a new configuration on the basis of this. This method takes full advantage of the FPGAs¿ reconfiguration feature. It not only omits complex test pattern generation, but also optimizes the BIST circuits to minimize the area cost, and reaches higher fault coverage. To verify the theory, we use Xilinx vertex4 devices on the experimental test, and achieved approving results.

关键词： Delay Testing Table lookup Field programmable gate arrays Circuit faults Frequency Circuit simulation Test pattern generators Built-in self-test Cost function

来源：评论

学校读者我要写书评

暂无评论

Investigations on proton-irradiation-induced spacer damage in deep-submicron MOSFETs

Investigations on proton-irradiation-induced spacer damage i...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Shoubin Xue Pengfei Wang Ru Huang Dake Wu Yunpeng Pei Wenhua Wang Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781424421855;9781424421862

In this paper, we have focused our attention on DC characteristics degradation of 0.18 ¿m MOSFETs after 10-MeV proton irradiation. It is shown that the threshold voltage shift, the transconductance degradation and the saturation drain current decrease are lager in PMOSFETs, while small effects are exhibited in NMOSFETs. From the analysis, it is concluded that the basic damage mechanism is not ascribed to the gate oxide and the isolation. The origin of the observed changes is due to the damage in spacer oxides of the MOSFETs. The mechanism involved is that the energetic protons incident on the spacer region lose their energy to displace the atoms, give rise to many defects, and create a disordered region (displacement damage region), where many defects and traps can capture positive charges to make the static characteristics degraded. Therefore, it is pointed out that the sidewalls are one of sensitive regions for irradiation hardness.

关键词： MOSFETs Protons Degradation Voltage CMOS technology Dielectric breakdown microelectronics Space technology Laboratories circuits

来源：评论

学校读者我要写书评

暂无评论

A simple nano-scale patterning technology for FinFET fabrication

A simple nano-scale patterning technology for FinFET fabrica...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Xu Han Chengen Yang Dingyu Li Shengdong Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781424421855;9781424421862

In this paper, a simple low-cost sub-50 nm silicon fin patterning technology is proposed and experimentally demonstrated. The technology is based on a micro-meter level lithography equipment, that is, it does not need any critical photolithographic step. The masking layer for fin formation is the nitride caped oxide layer which is reduced in width from sub-micrometer scale to nano-meter scale through a lateral etching in BOE. The etching rate is shown to slow down as the etching process goes on. A nano-scale oxide hard mask can be achieved after the nitride is removal. Both the cross-sectional view and top view of the etching process are shown by SEM photographs. Results indicate the simple patterning way is of low cost and under good control, and applicable to FinFET technology.

关键词： FinFETs Fabrication Etching Lithography Silicon Nanoscale devices microelectronics circuits Electron beams Ultraviolet sources

来源：评论

学校读者我要写书评

暂无评论

Characteristics of sub-100nm ferroelectric field effect transistor with high-k buffer layer

Characteristics of sub-100nm ferroelectric field effect tran...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Rui Jin Yuncheng Song Min Ji Honghua Xu Jinfeng Kang Ruqi Han Xiaoyan Liu Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781424421855

The simulation work is carried out using two dimension device simulator to investigate the characteristics of sub-100 nm ferroelectric field effect transistor (FeFET) with high-k material as the buffer layer. Different configurations of gate stack are simulated and analyzed. It is shown that the structure of double-layer buffer can improve the device performance efficiently. Some important issues for FeFET scaling down are also discussed in this paper.

关键词： Ferroelectric materials FETs High K dielectric materials High-K gate dielectrics Buffer layers Polarization Threshold voltage Circuit simulation Capacitors Semiconductor process modeling

来源：评论

学校读者我要写书评

暂无评论

A dual loop dual VCO CMOS PLL using a novel coarse tuning technique for DTV

A dual loop dual VCO CMOS PLL using a novel coarse tuning te...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Congyin Shi Huaizhou Yang Huiling Xiao Junhua Liu Huailin Liao Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781424421855

A CMOS phase-locked loop (PLL) which synthesizes frequencies between 474 and 858 MHz in steps of 1 MHz and settles in less than 180 ¿s is presented. This PLL can be implemented as a sub-circuit for a frequency synthesizer which serves for UHF Digital-TV receiver. To realize fast loop settling, integer-N architecture that work with 1 MHz reference frequency is implemented and a novel adaptive frequency calibration (AFC) of programmable dichotomizing coarse tuning technology is integrated. The novel AFC structure uses pulses of 2 n times of the PFD¿s reference frequency for counting and comparison. Two multi-band voltage controlled oscillators, which cover 866 to 1468 MHz and 1282 to 1892 MHz separately, are implemented so as to reduce VCO output noise and power consumption by reducing VCO gain on each frequency turning curse. I/Q carriers are generated by VCO output divided by 2. Fabricated in 0.18-¿m CMOS technology, the PLL achieves phase noise of less than -132 dBc/Hz at 1.45 MHz offset.

关键词： Voltage-controlled oscillators Phase locked loops Digital TV Tuning Frequency synthesizers Automatic frequency control CMOS technology Calibration Noise reduction Energy consumption

来源：评论

学校读者我要写书评

暂无评论

Resistive Switching Behaviors and Mechanism of Transition Metal Oxides-Based Memory devices

Resistive Switching Behaviors and Mechanism of Transition Me...

引用

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： J.F.Kang B.Sun B.Gao N.Xu X.Sun L.F.Liu Y.Wang X.Y.Liu R.Q.Han Y.Y.Wang Institute of Microelectronics Peking University & Key Laboratory of Microelectronic Devices and CircuitsMinistry of Education

In this paper,the characteristics and mechanism of the transition metal oxide(TMO) based resistive switching memory(RRAM) devices were addressed. The results show that doping in oxide matrix materials, electrode material,and operating mode of the set/reset process may significantly affect the resistive switching behaviors of RRAM *** the dopants and matrix materials,electrode materials,device structure,and operating modes and understanding the related mechanisms are required to achieve the excellent device performance of TMO-based RRAM for the memory application.A unified physical model,based on the electron hopping transport between oxygen vacancies along the conductive filament paths,is used to explain and describe the resistive switching behaviors of the TMO based RRAM devices.

关键词： LRS HRS Resistive Switching Behaviors and Mechanism of Transition Metal Oxides-Based Memory devices

来源：评论

学校读者我要写书评

暂无评论

A method to lower power in speed negotiation algorithm of fiber channel

A method to lower power in speed negotiation algorithm of fi...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Jie Jin Dun Shan Xiao Xin Cui Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing P. R. China

ISBN: (纸本)9781424421855

In this paper, we propose a simple but effective method to reduce the power in the design of the speed negotiation algorithm(SNA). Based on thoroughly analyzing the algorithm and the results of simulation, we identify the large timers, the most commonly used in the SNA, as the most power consuming parts. This paper further develops a partition algorithm to tackle the power issue of the large timers. Utilizing the proposed method, we can reduce the power by 30% as opposed to only 19% if directly applying clock-gating methodology. Combined with clock-gating methodology, we can get 38% reduction in power with no more than 5% increase in area.

关键词： Analytical models Partitioning algorithms Clocks CMOS technology Storage area networks microelectronics Algorithm design and analysis Automata Optical fiber devices Laboratories

来源：评论

学校读者我要写书评

暂无评论

Fabrication and characteristics of ZnO-based thin film transistors

Fabrication and characteristics of ZnO-based thin film trans...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Dedong Han Yi Wang Shengdong Zhang Lei Sun Jinfeng Kang Xiaoyan Liu Gang Du Lifeng Liu Ruqi Han Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781424421855

ZnO-based thin-film transistors (TFT) have been fabricated on p-Si (100) substrates by radio frequency (rf) magnetron sputtering at room temperature with a bottom gate configuration. The XRD and SEM show that ZnO films had high crystalline quality. The ZnO films present an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The electrical properties of ZnO-based TFTs were investigated by I D -V D and I D -V G measurements. The ZnO TFT operates in the enhancement mode with a channel mobility of 6.86 cm 2 /V · s. The combination of transparency, high channel mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of flat panel display (FDP).

关键词： Fabrication Thin film transistors Zinc oxide Optical films Substrates Temperature Radio frequency Sputtering X-ray scattering Crystallization

来源：评论

学校读者我要写书评

暂无评论

Structure and magnetic properties of Co-doped TiO2 nanotubes by aqueous solution method

Structure and magnetic properties of Co-doped TiO2 nanotubes...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： A-bo Zheng Yan Li Yi Wang Lei Sun Li-feng Liu De-dong Han Jin-feng Kang Xing Zhang Ru-qi Han Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781424421855;9781424421862

The Co-doped titanium dioxide nanotubes were synthesized via the aqueous solution reaction. After hydrogenation, room temperature ferromagnetism (RTFM) was found in the cobalt doped titanium dioxide nanotubes at 300 K by the vibrate sample magnetometer. As the concentration of cobalt increased, the observed ferromagnetism became stronger. The X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy were performed and excluded the existence of cobalt cluster. Therefore, the magnetic ions and oxygen vacancies induced by hydrogenation contribute to the observed ferromagnetism at 300 K.

关键词： Magnetic properties Cobalt Titanium Nanotubes Scanning electron microscopy Transmission electron microscopy Temperature Magnetometers X-ray diffraction Dispersion

来源：评论

学校读者我要写书评

暂无评论

Theoretical study of low-energy electron penetration in resist-substrate target by Monte Carlo simulation

Theoretical study of low-energy electron penetration in resi...

引用

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Liming Ren Baoqin Chen Ru Huang Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Institute of Microelectronics of the Chinese Academy of Sciences

Low-energy electron beam lithography has a variety of *** traditional electron scattering model consisting of Rutherford elastic scattering cross section and Bethe continuous slowing down approximation formula are not suitable for low-energy electron beam lithography.A more accurate physical model describing the low-energy electron scattering processes was proposed in this *** Monte Carlo method was used to simulate the complex scattering processes of Gaussian-distribution low-energy electron beam in the target of thin film on thick *** simulation results show that low-energy electron beam lithographyhas advantages of high throughput,low proximity effects and small damage to the underlying *** is in agreement with the conclusion got from Lee et al's and Peterson et al's experiments.

关键词： Theoretical study of low-energy electron penetration in resist-substrate target by Monte Carlo simulation Carlo Monte

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共43页 << < 34 35 36 37 38 39 40 41 42 43 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：