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China Semiconductor Technology International Conference (CSTIC)

作者： Yanzhao Wei Jiaxin Yao Renren Xu Qingzhu Zhang Huaxiang Yin Integrated Circuit Advanced Process R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing China School of Integrated Circuits University of Chinese Academy of Sciences Beijing China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

In this paper, a La 2 O 3 /HfO 2 bi-layer dipole-first (DF) process is proposed and investigated by ultra-low temperature PVD dielectric laminates to achieve lower gate effective work function (EWF) for monolithic 3D-IC (M3D) application. The impacts of ultra-low temperature La-dipole on EWF modulation and interfacial properties are comprehensively investigated. It is found that the flat-band voltage (V FB ) negatively shifts 60 mV with sub-1nm La 2 O 3 thickness, which provides an effective way to meet the require of Si conduction band-edge EWF modulation. Furthermore, the electron trap/detrap densities (Not) and interfacial trap densities (Dit) are suppressed by La 2 O 3 /HfO 2 bi-layer DF process to improve device performance. These results exhibit a promising bi-layer DF process in low thermal integration for advanced IC technology.

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A Low Power Active-Passive Noise Shaping SAR ADC

A Low Power Active-Passive Noise Shaping SAR ADC

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Electronic Technology, Communication and Information (ICETCI), IEEE International Conference on

作者： Ziqi Huang Weilin Xu Baolin Wei Xueming Wei Haiou Li Guangxi Key Laboratory of Precision Navigation Technology and Applications Guilin University of Electronic Science and Technology Guilin China Education Department of Guangxi Zhuang Autonomous Region Key Laboratory of Microelectronic Devices and Integrated Circuits Guilin University of Electronic Technology Guilin China

The traditional passive noise-shaping SAR ADC has low power consumption but weak shaping capability; while the active noise-shaping SAR ADC has strong shaping capability but high-power consumption. The typical active-passive SAR ADC still consumes considerable power due to the use of OTA amplifier in the active part. In this paper, an active-passive noise-shaping SAR ADC is designed by using floating inversion amplifier (FIA) to replace the traditional OTA amplifier in the active part, which achieves a strong noise shaping capability and low power consumption at the same time. The second-order active-passive noise-shaping SAR ADC circuit designed by a 180nm CMOS process achieves 14.6-bit ENOB with 400KS/s sampling rate and consumes only 28.9µW.

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A low-Power SRAM with charge cycling based read and write assist scheme 15

A low-Power SRAM with charge cycling based read and write as...

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15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020

作者： Zhang, Hanzun Jia, Song Yang, Jiancheng Wang, Yuan Institute of Microelectronics Peking University Beijing100871 China Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing China

ISBN: (纸本)9781728162355

In a SRAM array, the largest power consumer is pre-charging or voltage switching on bit-lines in read or write operations. The paper presents a bit-line charge cycling based read and write assist circuit for static random-access memory. With help of the assist circuit, the BLs charges wasted in conventional design is reused for BLs pre-charging in next period. The proposed array is simulated in SMIC 14nm FinFET process with a supply voltage of 0.8V. Simulation results show that a 23%-43% power reduction is achieved compared with conventional designs. © 2020 IEEE.

关键词： Static random access storage

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A Low Power OTA-C Filter for Wireless Body Area Networks

A Low Power OTA-C Filter for Wireless Body Area Networks

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International Conference on Integrated circuits and Microsystems (ICICM)

作者： Jueyong Zhu Weilin Xu Xueming Wei Baolin Wei Haiou Li Education Department of Guangxi Zhuang Autonomous Region Key Laboratory of Microelectronic Devices and Integrated Circuits Guilin University of Electronic Technology Guilin China Guangxi Key Laboratory of Precision Navigation Technology and Applications Guilin University of Electronic Science and Technology Guilin China

The traditional OTA structure uses the current splitting technology to decompose most of the current, which can effectively reduce the transconductance, but the excessive current splitting ratio will bring power loss. To solve this problem, a multiple-output fully differential (MOFD) cascode OTA structure is proposed. This structure can generate additional output by connecting the load to the current splitting branch, which can effectively utilize the current generated by the current splitting to reduce the power loss. In order to reduce the passband attenuation of the filter, the output stage adopts the cascode structure to increase the output impedance of the OTA, and the improved source negative feedback structure obtains lower transconductance and better linear range. Compared with the traditional structure, the number of OTAs of the fifth-order Butterworth low-pass filter with this OTA structure is reduced from 11 to 6, thereby reducing power consumption and achieving lower passband attenuation. The circuit is verified by 0.18 um CMOS process. The results show that the passband gain of the proposed filter is only −6.1 dB. −3dB frequency is 260 Hz. For 100 mV sinusoidal input signal at 50 Hz, the total harmonic distortion (THD) of the filter is about −66 dB and the power consumption is only 11.4 $\mu \mathbf{W}$ at 1.8 V supply.

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High-sensitivity graphene MEMS force and acceleration sensor based on graphene-induced non-radiative transition

arXiv

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arXiv 2023年

作者： Li, Guanghui Liu, Fengman Yang, Shengyi Liu, Jiang-Tao Li, Weimin Wu, Zhenhua School of Physics and Mechatronic Engineering Guizhou Minzu University Guiyang550025 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China School of Integrated Circuits University of CAS Beijing100049 China

The micro-electromechanical-system (MEMS) force and acceleration sensor utilizing the graphene-induced non-radiative transition was investigated. The graphene-induced non-radiative transition is very sensitive to the distance, and the deflection of the graphene ribbon is highly susceptive to applied force or acceleration. Thus, a high-sensitivity MEMS sensor can be achieved with detecting the graphene ribbon’s deflection of 1 nm, the force of 0.1 pN, and the acceleration of 0.1 mg. The MEMS sensor, with a size of only tens of microns, can be charged by light irradiation without connecting power sources. In addition, it allows long-distance detection, i.e., wireless transmitter circuit can be omitted. Therefore, it will have significant application prospects in the fields of micro-smart devices, wearable devices, biomedical systems, and so on. Copyright © 2023, The Authors. All rights reserved.

关键词： Graphene

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Uniform, fast, and reliable CMOS compatible resistive switching memory

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Journal of Semiconductors 2022年第5期43卷 109-115页

作者： Yunxia Hao Ying Zhang Zuheng Wu Xumeng Zhang Tuo Shi Yongzhou Wang Jiaxue Zhu Rui Wang Yan Wang Qi Liu Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China School of Integrated Circuits Anhui UniversityHefei 230601China Frontier Institute of Chip and System Fudan UniversityShanghai 200433China

Resistive switching random access memory(RRAM) is considered as one of the potential candidates for next-generation memory. However, obtaining an RRAM device with comprehensively excellent performance, such as high retention and endurance, low variations, as well as CMOS compatibility, etc., is still an open question. In this work, we introduce an insert TaO_(x) layer into HfO_(x)-based RRAM to optimize the device performance. Attributing to robust filament formed in the TaO_(x) layer by a forming operation, the local-field and thermal enhanced effect and interface modulation has been implemented simultaneously. Consequently, the RRAM device features large windows(> 10^(3)), fast switching speed(-10 ns), steady retention(> 72h), high endurance(> 10^(8) cycles), and excellent uniformity of both cycle-to-cycle and device-to-device. These results indicate that inserting the TaO_(x) layer can significantly improve HfO_(x)-based device performance, providing a constructive approach for the practical application of RRAM.

关键词： uniformity resistance switching field enhance layer thermal enhance layer and interface modulation

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A Systematic Characterization Method for Time-resolved Stability and Reliability Issues on Lateral GaN Power devices

A Systematic Characterization Method for Time-resolved Stabi...

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International Symposium on Power Semiconductor devices and Ics (ISPSD)

作者： Yifei Huang Qimeng Jiang Sen Huang Xinyu Liu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of the Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Beijing China Institute of Microelectronics University of Chinese Academy of Sciences Beijing China

In this work, three testing modes, including continuous hard switching testing (HSW), high-voltage DC stress testing (DC) and recovery testing (RE), are implemented to characterize time-resolved dynamic $R_{\text{ON}}$ behaviors of GaN HEMT devices, based on the inductive-load evaluation platform. The proposed stressing pattern (DC-HSW-DC-RE) enables the separation of de-stress- and transient-stress-induced dynamic $R_{\text{ON}}$ . Based on the stressing pattern, a novel physical-based characterization method is proposed to identify the irreversible degradation of dynamic $R_{\text{ON}}$ , featuring excellent sensitivity when compared with the traditional methods. In addition, lifetime acceleration experiments are carried out, and the irreversible $R_{\text{ON}}$ degradation exhibits a strong dependence on voltage and current, but a weak dependence on temperature.

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Development of HSQ replacement gate process for silicon nanowire MOS devices

Development of HSQ replacement gate process for silicon nano...

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IEEE Electron devices Technology and Manufacturing Conference (EDTM)

作者： Kun Tu Xiaoqiao Dong Baotong Zhang Ru Huang Ming Li Peimin Lu Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China Fuzhou University Fuzhou China

In this paper, we have developed a replacement gate process with HSQ based on electron beam transmission exposure, which can simply and efficiently realize ideally symmetrical gate-all-around structure. HSQ replacement gate with intact morphology is successfully prepared on suspended nanowire arrays. With Si₃N₄ as the filling dielectric material, HSQ replacement gate is flattened by CMP and removed by hydrofluoric acid. Finally, the self-aligned and completely controllable poly-Si gate-all-around structure is realized successfully.

关键词： Electron beams Dielectric materials Morphology Logic gates Silicon Nanoscale devices Filling

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Direct Cu-polyimide Bonding Achieved by Surface Activation and Pt-catalyzed Formic Acid Atmosphere

Direct Cu-polyimide Bonding Achieved by Surface Activation a...

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2021 IEEE International Conference on Integrated circuits, Technologies and Applications, ICTA 2021

作者： Meng, Ying Gao, Runhua Wang, Xinhua Chen, Xiaojuan Huang, Sen Wei, Ke Wang, Dahai Mu, Fengwen Liu, Xinyu Chinese Academy of Sciences High-Frequency High-Voltage Device and Integrated Circuits RD Center Institute of Microelectronics Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9781665417471

Recent flexible printed circuit applications of high-frequency wireless communication systems require thicker metal layers on substrates for lower ohmic losses. In this paper, a Cu layer over 50-micron thick was directly generated on the polyimide substrate by heterogeneous bonding method without interlayer. The polyimide was first sputtered a 200 nm-thick Cu layer, and then was activated by oxygen plasma to improve its hydrophilicity and achieve direct adhesion between polyimide and nanoscale Cu deposition, and eventually was bonded with a 50micron-thick Cu foil in a Pt-catalyzed formic acid atmosphere by thermo-compression. The effectiveness of this method was verified by comparing bonding interfaces, shear strength, and fracture modes of bonded samples with and without a Cr interlayer. This method provides a new idea for the integration of heterogeneous materials needed in wearable products and flexible printed circuits. © 2021 IEEE.

关键词： Formic acid

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Suppression of Bulk Traps in Al2o3 Gate Dielectric and its Effect on Threshold Voltage Instability in Al2o3/Algan/Gan Metal-Oxide-Semiconductor High Electron Mobility Transistors

SSRN

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SSRN 2023年

作者： Deng, Kexin Huang, Sen Wang, Xinhua Jiang, Qimeng Yin, Haibo Fan, Jie Jing, Guanjun Wei, Ke Zheng, Yingkui Shi, Jingyuan Liu, Xinyu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Bulk trapping and its effects on threshold voltage hysteresis (ΔVTH) in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) are researched through isothermal capture transient spectroscopy. A post deposition annealing (PDA) at 500 ℃ in the O2 ambient is confirmed to be an effective way to reduce the bulk traps in the atomic layer deposited (ALD)-Al2O3 film as it contributes to the suppressed ΔVTH in Al2O3/AlGaN/GaN MOS-HEMTs. Isothermal-mode capacitance deep level transient spectroscopy (C-DLTS) is utilized to investigate the threshold voltage instability in Al2O3/AlGaN/GaN MOS-HEMTs. The evolution of the C-DLTS signals verifies the continual charging of oxide bulk traps in the Al2O3 gate dielectric once the gate bias of the MOS-HEMTs is applied exceeding +3 V, which leads to the degraded ΔVTH as well as subthreshold slopes in transfer characterization. Such traps probably stem from the Al-O-H component in as-deposited Al2O3 layers, as detected by X-ray photoelectron spectroscopy (XPS) analysis. Energy band simulation further illustrates the capture process of the oxide bulk traps, verifying the physical relationship between bulk-trapping and ΔVTH. © 2023, The Authors. All rights reserved.

关键词： Gallium nitride

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