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Vertical‐organic‐nanocrystal‐arrays for crossbar memristors with tuning switching dynamics toward neuromorphic computing

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SmartMat 2021年第1期2卷 99-108页

作者： Fangxu Yang Lingjie Sun Qingxi Duan Huanli Dong Zhaokun Jing Yuchao Yang Rongjin Li Xiaotao Zhang Wenping Hu Leon Chua Key Laboratory of Molecular Optoelectronic Sciences School of ScienceTianjin UniversityTianjinChina Beijing National Research Center for Molecular Sciences Chinese Academy of SciencesBeijingChina Joint School of National University of Singapore and Tianjin University International Campus of Tianjin UniversityBinhai New CityFuzhouChina Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking UniversityBeijingChina Department of Electrical Engineering and Computer Sciences University of CaliforniaBerkeleyCaliforniaUSA

Memristors proposed by Leon Chua provide a new type of memory device for novel neuromorphic computing ***,the approaching of distinct multi‐intermediate states for tunable switching dynamics,the con-trolling of conducting filaments(CFs)toward high device repeatability and reproducibility,and the ability for large‐scale preparation devices,remain full of ***,we show that vertical‐organic‐nanocrystal‐arrays(VONAs)could make a way toward the *** perfect one‐dimensional structure of the VONAs could confine the CFs accurately with fine‐tune resistance states in a broad range of 103 *** availability of large‐area VONAs makes the fabrication of large‐area crossbar memristor arrays facilely,and the analog switching characteristic of the memristors is to effectively imitate different kinds of synaptic plasticity,indicating their great potential in future applications.

关键词： conducting filament memristor organic electronics organic single crystal

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A Readout Circuit with Current-Compensation-Based Extended-Counting ADC for 1024×768 Diode Uncooled Infrared Imagers

A Readout Circuit with Current-Compensation-Based Extended-C...

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IEEE International Symposium on circuits and Systems (ISCAS)

作者： Shanzhe Yu Xueyou Shi Yacong Zhang Guangyi Chen Siyuan Ye Wengao Lu Zhongjian Chen Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University China Peking University Information Technology Institute (Tianjin Binhai) China

This paper presents a low-power readout circuit with 14-bit column-level extended-counting ADC for 17μm-pitch 1024 × 768 silicon diode uncooled infrared imagers. The ADC's coarse conversion adopts a current-mode DAC to feedback charge into a CTIA-based integrator during integration and the fine conversion is implemented by a SAR ADC after integration. A current self-compensator and a modified DAC are proposed to reduce more than 50% power of the overall integrator compared with conventional structure. The 1024 × 768 readout circuit has been fabricated in the 0.18 μm 1P5M CMOS process. Power consumption of the readout circuit is 104mW and each column ADC only consumes 15μW. Simulation results show that the RMS noise of the readout circuit is 0.9LSB and nonlinearity is 0.06% at 30fps.

关键词： Power demand circuits and systems Simulation Linearity CMOS process Silicon

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非平衡压缩实现高灵敏度、线性响应协同的离电压力传感器

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Science Bulletin 2024年第14期69卷 2221-2230页

作者：杨静李志斌伍莹沈勇张明陈彬袁国江肖松华冯建松张旭唐毓蔚丁孙安陈晓龙王太宏 Department of Electrical and Electronic Engineering Southern University of Science and TechnologyShenzhen 518055China School of Microelectronics Southern University of Science and TechnologyShenzhen 518055China Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of EducationChangsha Semiconductor Technology and Application Innovation Research InstituteCollege of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China School of Environmental and Chemical Engineering Yanshan UniversityQinhuangdao 066004China School of Integrated Circuits Nanjing UniversitySuzhou 215163China

Flexible pressure sensors with high sensitivity and linearity are highly desirable for robot sensing and human physiological signal ***,the current strategies for stabilizing axial microstructures(e.g.,micro-pyramids)are mainly susceptible to structural stiffening during compression,thereby limiting the realization of high sensitivity and ***,we report a bending-induced nonequilibrium compression process that effectively enhances the compressibility of microstructures,thereby crucially improving the efficiency of interfacial area growth of electric double layer(EDL).Based on this principle,we fabricate an iontronic flexible pressure sensor with vertical graphene(VG)array ***-high sensitivity(185.09 kPa^(-1))and linearity(R^(2)=0.9999)are realized over a wide pressure range(0.49 Pa–66.67 k Pa).It also exhibits remarkable mechanical stability during compression and *** sensor is successfully employed in a robotic gripping task to recognize the targets of different materials and shapes based on a multilayer perception(MLP)neural *** opens the door to realizing haptic sensing capabilities for robotic hands and prosthetic limbs.

关键词： Artificial mechanoreceptor Pressure sensor Vertical grapheme Ionic nanofiber Object recognition E-skin

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Two-dimensional materials for future information technology: status and prospects

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Science China(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School of Integrated Circuits Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University School of Electronic Science and Engineering Nanjing University The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and TechnologyWuhan University School of Integrated Circuits Huazhong University of Science and Technology Center for Nanochemistry (CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University State Key Laboratory for Artificial Microstruct

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

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Fatigue of ferroelectric field effect transistor: mechanisms and optimization strategies

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Journal of Semiconductors 2025年第6期46卷 69-82页

作者： Yu Song Pengfei Jiang Pan Xu Xueyang Peng Qianqian Wei Qingyi Yan Wei Wei Yuan Wang Xiao Long Tiancheng Gong Yang Yang Eskilla Venkata Ramana Qing Luo Key Laboratory of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences University of Chinese Academy of Sciences I3N-Aveiro Department of Physics University of Aveiro

The novel HfO2-based ferroelectric field effect transistor（FeFET） is considered a promising candidate for next-generation nonvolatile memory（NVM）. However, a series of reliability issues caused by the fatigue effect hinder its further development. Therefore, a comprehensive understanding of the fatigue mechanisms of the device and optimization strategies is essential for its application. The fundamental mechanism of the fatigue effect is attributed to charge trapping and trap generation based on the current studies, and the underlying causes, occurrence locations and specific impacts are analyzed in this *** particular, the asymmetric trapping/detrapping of electrons and holes, as well as the relationship between the ferroelectric（FE） polarization and charge trapping, are given particular attention. After categorizing and summarizing the current progress,we propose a series of optimization strategies derived based on the fatigue mechanisms.

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Single-Electron Transistor Based on Cobalt Oxide

Single-Electron Transistor Based on Cobalt Oxide

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IEEE International Symposium on circuits and Systems

作者： Muchan Li Zhongzheng Tian Xuemin Yu Dacheng Yu Zhongyang Ren Liming Ren Yunyi Fu Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing P. R. China

In this paper, we propose and implement a single-electron transistor (SET) based on cobalt oxide for the first time. The SETs were fabricated through nanofabrication process compatible with the CMOS technology. A cobalt oxide (Co1-yO) on the surface of the source (S) and drain (D) Co electrodes is utilized to act as a quantum dot (QD). The diameter of QD is calculated to be 2.3 nm. The interface between Co1-yO and Co thin films (S/D electrodes) is used as tunneling junctions. The SET based on CoO exhibits typical single electron transport characteristics. Owing to the high Coulomb blockade energy (～180 meV), the Coulomb blockade regions still remain at room temperature (300 K), revealing the nanometer scale CoO-based SETs have great potential to operate at room temperature.

关键词： Electrodes Temperature Quantum dots Tunneling Cobalt Junctions Single electron transistors

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通过高通量研究识别用于本征陡坡晶体管的原子级薄孤立能带沟道材料

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Science Bulletin 2024年第10期69卷 1427-1436页

作者：屈恒泽张胜利曹江吴振华柴扬李卫胜李连忠任文才王欣然曾海波 MIIT Key Laboratory of Advanced Display Materials and Devices College of Material Science and EngineeringNanjing University of Science and TechnologyNanjing 210094China School of Electronic and Optical Engineering Nanjing University of Science and TechnologyNanjing 210094China Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China Department of Applied Physics The Hong Kong Polytechnic UniversityHong Kong 999077China National Laboratory of Solid State Microstructures School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210023China Department of Mechanical Engineering The University of Hong KongHong Kong 999077China Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Integrated Circuits Nanjing UniversitySuzhou 215163China Suzhou Laboratory Suzhou 215009China

Developing low-power FETs holds significant importance in advancing logic circuits,especially as the feature size of MOSFETs approaches sub-10 ***,this has been restricted by the thermionic limitation of SS,which is limited to 60 mV per decade at room ***,we proposed a strategy that utilizes 2D semiconductors with an isolated-band feature as channels to realize subthermionic SS in *** high-throughput calculations,we established a guiding principle that combines the atomic structure and orbital interaction to identify their sub-thermionic transport *** guides us to screen 192 candidates from the 2D material database comprising 1608 ***,the physical relationship between the sub-thermionic transport performances and electronic structures is further revealed,which enables us to predict 15 systems with promising device performances for low-power applications with supply voltage below 0.5 *** work opens a new way for the low-power electronics based on 2D materials and would inspire extensive interests in the experimental exploration of intrinsic steep-slope MOSFETs.

关键词： 2D materials Electronic band structures Transport properties Steep-slope transistors DFT-NEGF calculations

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Design of a Three-Dimensional Inlet Structure for Preventing Cell Deposition of Microfluidic Flow Cytometry

Design of a Three-Dimensional Inlet Structure for Preventing...

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International Symposium on Next-Generation Electronics (ISNE)

作者： Yu Hu Ya Li Xu Wang Ziqiang Du Wenchang Zhang Xiaonan Yang School of Electrical and Information Engineering Zhengzhou University Zhengzhou China Department of Gastroenterology The First Affiliated Hospital of Zhengzhou University Zhengzhou China Key Laboratory of microelectronic devices and integration technology Institute of Microelectronics of the Chinese Academy Beijing China

Microfluidic flow cytometry has the advantage of simple structure and easy sample handling, with a promising application for point-of-care testing. Long time imaging at low flow rates leads to inlet cell deposition and inaccurate counting. In this paper, we propose a three-dimensional inlet structure that can effectively reduce cell deposition and achieve a smaller dead zone area. First, the geometric design of the structure is presented and the flow path and dead zone distribution of the structure are analysed. Then, the design method and preparation process of the structure are described. In order to test the optimised performance of the structure, analytical experiments were carried out and cell counts were analysed and counted using image detection methods. The results show that the junction structure is able to assist in sample feeding and increase the cell throughput values by approximately 21%.

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Nanofabrication beyond optical diffraction limit: Optical driven assembly enabled by superlubricity

arXiv

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arXiv 2024年

作者： Jiang-Tao, Liu Peng, Deli Yang, Qin Liu, Ze Wu, Zhenhua College of Physics and Mechatronic Engineering Guizhou Minzu University Guiyang550025 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Institute of Superlubricity Technology Research Institute of Tsinghua University in Shenzhen Shenzhen518057 China Department of Engineering Mechanics Tsinghua University Beijing100084 China School of Integrated Circuits University of CAS Beijing100049 China

The optical manipulation of nanoparticles on superlubricity surfaces is investigated. The research revealed that, due to the near-zero static friction and extremely low dynamic friction at superlubricity interfaces, the maximum intensity for controlling the optical field can be less than 100 W/cm2, which is nine orders of magnitude lower than controlling nanoparticles on traditional interfaces. The controlled nanoparticle radius can be as small as 5 nm, which is more than one order of magnitude smaller than nanoparticles controlled through traditional optical manipulation. Manipulation can be achieved in sub-microsecond to microsecond timescales. Furthermore, the manipulation takes place on solid surfaces and in non-liquid environments, with minimal impact from Brownian motion. By appropriately increasing dynamic friction, controlling light intensity, or reducing pressure, the effects of Brownian motion can be eliminated, allowing for the construction of microstructures with a size as small as 1/75 of the wavelength of light. This enables the control of super-resolution optical microstructures. The optical super-resolution manipulation of nanoparticles on superlubricity surfaces will find important applications in fields such as nanofabrication, photolithography, optical metasurface, and biochemical analysis. © 2024, CC BY.

关键词： Nanoparticles

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Nondestructive visualization of graphene on Pt with methylene blue surface modification

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Science China Materials 2022年第10期65卷 2763-2770页

作者： He Kang Yanhui Zhang Yun Wu Shike Hu Jing Li Zhiying Chen Yanping Sui Shuang Wang Sunwen Zhao Runhan Xiao Guanghui Yu Songang Peng Zhi Jin Xinyu Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device InstituteNanjing 210016China Microwave Devices and Integrated Circuits Department Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

Efficient large-scale nondestructive quality assessment of graphene on Pt is essential to the in-depth growth research and practical applications of ***,we present a very simple method for directly observing the domains and defects in graphene on Pt using an ordinary optical *** was achieved by modifying graphene on Pt using methylene blue(MB).Because the chemical activities of graphene and Pt surface differ significantly,the adsorption and reaction of MB on graphene and platinum surface *** can determine the distribution of graphene crystal domains and defects by comparing the colors in the optical *** addition,this characterization method causes no obvious damage to the Pt substrate and ***,it does not affect the recycling of the substrate or the subsequent characterization or application of *** study provides a nondestructive method for measuring the quality of graphene on Pt on a large scale,as well as a reference for the characterization and doping of other two-dimensional materials.

关键词： graphene Pt nondestructive visualization surface modification methylene blue

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