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检索条件"机构=Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics"
429 条 记 录,以下是71-80 订阅
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A 160×120 ROIC with non-uniformity calibration for silicon diode uncooled IRFPA
A 160×120 ROIC with non-uniformity calibration for silicon ...
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2019 IEEE International Conference on Electron devices and Solid-State circuits, EDSSC 2019
作者: Zhu, Yajun Niu, Yuze Lu, Wengao Huang, Zhaofeng Zhang, Yacong Chen, Zhongjian Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University Beijing China
This paper presents a ROIC (Readout Integrated Circuit) with NUC (Non-uniformity Calibration), which is applied in a silicon diode uncooled IRFPA (Infrared Focal Plane Array). We propose blind pixel to calibrate chip ... 详细信息
来源: 评论
Efficient 16 Boolean logic and arithmetic based on bipolar oxide memristors
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Science China(Information Sciences) 2020年 第10期63卷 203-210页
作者: Rui YUAN Mingyuan MA Liying XU Zhenhua ZHU Qingxi DUAN Teng ZHANG Yu ZHU Yu WANG Ru HUANG Yuchao YANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Department of Micro/NanoelectronicsPeking University Department of Electronic Engineering Beijing National Research Center for Information Science and TechnologyTsinghua University Center for Brain Inspired Chips Academy for Artificial IntelligencePeking University Frontiers Science Center for Nano-optoelectronics Peking University
The physically separated memory and logic units in traditional von Neumann computers place essential limits on the performance and cause increased energy consumption, and hence in-memory computing is required to overc... 详细信息
来源: 评论
Interfacial properties of 2DWS2on SiO2substrate from x-ray photoelectron spectroscopy and first-principles calculations
arXiv
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arXiv 2022年
作者: Zhou, Changjie Zhu, Huili Yang, Weifeng Lin, Qiubao Zheng, Tongchang Yang, Lan Lan, Shuqiong Xiamen Key Laboratory of Ultra-Wide Bandgap Semiconductor Materials and Devices Department of Physics School of Science Jimei University Xiamen361021 China Department of Microelectronics and Integrated Circuits Xiamen University Xiamen361005 China
Two-dimensional (2D) WS2films were deposited on SiO2wafers, and the related interfacial properties were investigated by high-resolution x-ray photoelectron spectroscopy (XPS) and first-principles calculations. Using t... 详细信息
来源: 评论
Rectangular suspended single crystal Si nanowire with (001) planes and <001> direction developed via TMAH wet chemical etching
Rectangular suspended single crystal Si nanowire with (001) ...
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China Semiconductor Technology International Conference (CSTIC)
作者: Shuang Sun Baotong Zhang Yuancheng Yang Xia An Xiaoyan Xu Ru Huang Ming Li Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China
In this study, a kind of rectangular suspended single crystal Si nanowire with (001) planes and along direction is developed via a CMOS-compatible top-down scheme. In this scheme, the nanowires are formed by anisotrop... 详细信息
来源: 评论
Implementation of Lateral Divisive Inhibition Based on Ferroelectric Fet with Ultra-Low Hardware Cost for Neuromorphic Computing
Implementation of Lateral Divisive Inhibition Based on Ferro...
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China Semiconductor Technology International Conference (CSTIC)
作者: Shuhan Liu Tianyi Liu Zhiyuan Fu Cheng Chen Qianqian Huang Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China
In this work, a novel bio-inspired hardware design of lateral divisive inhibition is proposed and demonstrated by using only one transistor of ferroelectric FET. The proposed design is simulated based on our developed... 详细信息
来源: 评论
Physical Insights into the Impact of Internal Metal Gate on the Subthreshold Behavior of NCFET Based on Domain Switching Dynamics
Physical Insights into the Impact of Internal Metal Gate on ...
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International Conference on Solid-State and Integrated Circuit Technology
作者: Tianyue Fu Qianqian Huang Liang Chen Chang Su Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China
In this work, the influences of the internal metal of gate stack in Negative Capacitance FET (NCFET) are clarified based on domain switching dynamics physically. By analyzing the equivalent ferroelectric (FE)/dielectr... 详细信息
来源: 评论
Device Modeling and Application Simulation of Ferroelectric-FETS with Dynamic Multi-Domain Behavior
Device Modeling and Application Simulation of Ferroelectric-...
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China Semiconductor Technology International Conference (CSTIC)
作者: Zhiyuan Fu Cheng Chen Jin Luo Qianqian Huang Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing CHINA
In this work, a ferroelectric-FET (FeFET) model based on multi-domain Preisach theory is developed. Instead of the single-domain Landau-Khalatnikvo (L-K) and tanh based model, the Preisach model with dynamic module is... 详细信息
来源: 评论
Origin of Steep Subthreshold Swing Within the Low Drain Current Range in Negative Capacitance Field Effect Transistor
Origin of Steep Subthreshold Swing Within the Low Drain Curr...
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China Semiconductor Technology International Conference (CSTIC)
作者: Chang Su Qianqian Huang Mengxuan Yang Liang Chen Zhongxin Liang Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing CHINA
Negative capacitance FET (NCFET) can achieve the steeper subthreshold swing (SS) than conventional MOSFET for the reduction of supply voltage V DD , while many experimental results indicate that NCFETs show the steepe... 详细信息
来源: 评论
Continuous-Time Digital Twin with Analogue Memristive Neural Ordinary Differential Equation Solver
arXiv
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arXiv 2024年
作者: Chen, Hegan Yang, Jichang Chen, Jia Wang, Songqi Wang, Shaocong Wang, Dingchen Tian, Xinyu Yu, Yifei Chen, Xi Lin, Yinan He, Yangu Wu, Xiaoshan Li, Yi Zhang, Xinyuan Lin, Ning Xu, Meng Li, Yi Zhang, Xumeng Wang, Zhongrui Wang, Han Shang, Dashan Liu, Qi Cheng, Kwang-Ting Liu, Ming Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong ACCESS – AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong Institute of the Mind The University of Hong Kong Hong Kong Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China School of Integrated Circuits Hubei Key Laboratory for Advanced Memories Huazhong University of Science and Technology Wuhan430074 China State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai200433 China Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Hong Kong
Digital twins, the cornerstone of Industry 4.0, replicate real-world entities through computer models, revolutionising fields such as manufacturing management and industrial automation. Recent advances in machine lear... 详细信息
来源: 评论
Integrated plasmonic ruler using terahertz multi-BIC metasurface for digital biosensing
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Moore and More 2025年 第1期2卷 67-79页
作者: Qun Ren Sheng Jia Jingtong Li Liu He Yan Xu Hao Huang Xiaoman Wang ZherYian Ooi Yongshan Liang Yaoyin Zhang Hang Xu Zhang Zhang Jianwei You Wei E.I.Sha Jianquan Yao School of Electrical and Information Engineering Tianjin UniversityTianjin 300072China Department of Ultrasound Diagnosis and Treatment Tianjin Medical University Cancer Institute and HospitalTianjin 300072China Key Laboratory of Opto-Electronics Information Technology Ministry of EducationSchool of Precision Instruments and Opto-Electronics EngineeringTianjin UniversityTianjin 300072China Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology School of MicroelectronicsTianjin UniversityTianjin 300072China School of Electronic and Information Engineering Changshu Institute of TechnologyJiangsu 215000China State Key Laboratory of Millimeter Waves School of Information Science and EngineeringSoutheast UniversityNanjing 210096China Key Laboratory of Micro-Nano Electronic Devices and Smart Systems of Zhejiang Province College of Information Science and Electronic EngineeringZhejiang UniversityHangzhou 310027China
In recent years,continuous bound states in the continuum(BIC)have gained significant attention for their practical applications in optics,chip technology,and modern *** approaches to realizing and analyzing BIC typi-c... 详细信息
来源: 评论