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Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess

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Journal of Semiconductors 2021年第9期42卷 61-65页

作者： Wen Shi Sen Huang Xinhua Wang Qimeng Jiang Yixu Yao Lan Bi Yuchen Li Kexin Deng Jie Fan Haibo Yin Ke Wei Yankui Li Jingyuan Shi Haojie Jiang Junfeng Li Xinyu Liu Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Institute of Microelectronics University of Chinese Academy of SciencesBeijing 100049China

A pre-ohmic micro-patterned recess process,is utilized to fabricate Ti/Al/Ti/TiN ohmic contact to an ultrathin-barrier(UTB)AlGaN/GaN heterostructure,featuring a significantly reduced ohmic contact resistivity of 0.56Ω·mm at an alloy temperature of 550℃.The sheet resistances increase with the temperature following a power law with the index of +2.58,while the specific contact resistivity decreases with the *** contact mechanism can be well described by thermionic field emission(TFE).The extracted Schottky barrier height and electron concentration are 0.31 eV and 5.52×10^(18) cm^(−3),which suggests an intimate contact between ohmic metal and the UTB-AlGaN as well as GaN buffer.A good correlation between ohmic transfer length and the micro-pattern size is revealed,though in-depth investigation is needed.A preliminary CMOS-process-compatible metal-insulator-semiconductor high-mobility transistor(MIS-HEMT)was fabricated with the proposed Au-free ohmic contact technique.

关键词： ultrathin-barrier AlGaN/GaN heterostructure low thermal budget Au-free ohmic contact micro-patterned ohmic recess MIS-HEMTs transfer length

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Collective Transport for Nonlinear Current-Voltage Characteristics of Doped Conducting Polymers

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Physical Review Letters 2023年第17期130卷 177001-177001页

作者： Jiawei Wang Dongyang Liu Lishuai Yu Feilong Liu Jiebin Niu Guanhua Yang Congyan Lu Nianduan Lu Ling Li Ming Liu Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 People’s Republic of China

Origin of nonlinear transport phenomena in conducting polymers has long been a topic of intense controversies. Most previous knowledge has attributed the macroscopic nonlinear I−V characteristics to individual behaviors of elementary resistors in the network. In this Letter, we show via a systematic dimensionality-dependent transport investigation, that understanding the nonlinear transport in conducting polymers must include the collective transport effect in a percolation network. The possible mediation of percolation threshold pc by controlling the samples’ dimensionality unveiled the collective effect in growth of percolation paths driven by electric field, enabling us to draw a smooth connection between two typically observed nonlinear phenomena, dissipative tunnelinglike and threshold-limited transport, which have been controversial for years. The possible microscopic origins of the collective transport are discussed within the Coulomb blockade theory.

关键词： Electrical conductivity Percolation Conducting polymers

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A Design of Four Dies Parallel NAND Flash Memory Controller Supporting Toggle and ONFI mode 15

A Design of Four Dies Parallel NAND Flash Memory Controller ...

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15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020

作者： Huang, Qin Wang, Zilin Lu, Wengao School of Software and Microelectronics Peking University Beijing102600 China Key Laboratory of Microelectronic Devices and Circuits Peking University Department of Microelectronics Beijing100871 China

ISBN: (纸本)9781728162355

The data access speed is an important index of the NAND Flash memory. This paper proposes a new structure which can implement high-speed data storage. One important feature of the controller is that one controller can operate four dies of NAND Flash memory at the same time. It improves the speed of data access effectively. The other important feature is that the controller can support both of the Toggle mode and ONFI mode. DDR protocol can achieve high rapid speed of storage. This design is attached to SOC system as AHB slave. The verification results demonstrate that this designed controller can correctly control NAND Flash memory to read, page program, reset, read ID, read status and block erase. The experimental results based on FPGA demonstrate that the speed of page program is 105.2MB/s. The read/write speed of the four dies parallel controller is 4 times better than the traditional controller. © 2020 IEEE.

关键词： Controllers

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Nanofabrication beyond optical diffraction limit: Optical driven assembly enabled by superlubricity

arXiv

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arXiv 2024年

作者： Jiang-Tao, Liu Peng, Deli Yang, Qin Liu, Ze Wu, Zhenhua College of Physics and Mechatronic Engineering Guizhou Minzu University Guiyang550025 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Institute of Superlubricity Technology Research Institute of Tsinghua University in Shenzhen Shenzhen518057 China Department of Engineering Mechanics Tsinghua University Beijing100084 China School of Integrated Circuits University of CAS Beijing100049 China

The optical manipulation of nanoparticles on superlubricity surfaces is investigated. The research revealed that, due to the near-zero static friction and extremely low dynamic friction at superlubricity interfaces, the maximum intensity for controlling the optical field can be less than 100 W/cm2, which is nine orders of magnitude lower than controlling nanoparticles on traditional interfaces. The controlled nanoparticle radius can be as small as 5 nm, which is more than one order of magnitude smaller than nanoparticles controlled through traditional optical manipulation. Manipulation can be achieved in sub-microsecond to microsecond timescales. Furthermore, the manipulation takes place on solid surfaces and in non-liquid environments, with minimal impact from Brownian motion. By appropriately increasing dynamic friction, controlling light intensity, or reducing pressure, the effects of Brownian motion can be eliminated, allowing for the construction of microstructures with a size as small as 1/75 of the wavelength of light. This enables the control of super-resolution optical microstructures. The optical super-resolution manipulation of nanoparticles on superlubricity surfaces will find important applications in fields such as nanofabrication, photolithography, optical metasurface, and biochemical analysis. © 2024, CC BY.

关键词： Nanoparticles

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Polar Axis Orientation Control of Hafnium-Based Ferroelectric Capacitors with in-Situ AC Electric Bias During Rapid Thermal Annealing

Polar Axis Orientation Control of Hafnium-Based Ferroelectri...

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Symposium on VLSI Technology

作者： Zhaomeng Gao Tianjiao Xin D. Kai Qiwendong Zhao Yiwei Wang Cheng Liu X. Yilin Rui Wang Guangjie Shi Yunzhe Zheng Yonghui Zheng Yan Cheng Hangbing Lyu Key Laboratory of Polar Materials and Devices (MOE) East China Normal University Shanghai China National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (CAS) Shanghai China Huawei Technologies Co. Shenzhen China Hualu Technologies Co. Shanghai China Institute of Microelectronics (CAS) Beijing China

ISBN: (数字)9798350361469

ISBN: (纸本)9798350361476

Hafnium-based ferroelectric (FE) thin films, prepared via atomic layer deposition (ALD), suffered from random oriented polar axis (PA), posing challenges and complexities for device scaling and variation. To effectively control the PA orientation and enhance polarization, we employed in-situ AC electric bias (E) during rapid thermal annealing (RTA) treatment (i.e. RTA+E). The main findings are: (1) Direct experimental evidence of variable orthogonal (0-) PA has been obtained for the first time, originating from tetragonal (T-) to O- transition in RTA cooling; (2) Applying E during cooling significantly enhances polarization in hafnium-based FE capacitors up to ~121.6% increase; (3) The RTA+E method effectively controls the O-PA orientation towards the out-of-plane E direction. These findings solidly demonstrate that the PA orientation of O-grain can be controlled in fluorite-type FE thin films.

关键词： Annealing Cooling Films Capacitors Position control Transforms Very large scale integration

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A Readout Circuit with Current-Compensation-Based Extended-Counting ADC for 1024×768 Diode Uncooled Infrared Imagers

A Readout Circuit with Current-Compensation-Based Extended-C...

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IEEE International Symposium on circuits and Systems (ISCAS)

作者： Shanzhe Yu Xueyou Shi Yacong Zhang Guangyi Chen Siyuan Ye Wengao Lu Zhongjian Chen Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University China Peking University Information Technology Institute (Tianjin Binhai) China

This paper presents a low-power readout circuit with 14-bit column-level extended-counting ADC for 17μm-pitch 1024 × 768 silicon diode uncooled infrared imagers. The ADC's coarse conversion adopts a current-mode DAC to feedback charge into a CTIA-based integrator during integration and the fine conversion is implemented by a SAR ADC after integration. A current self-compensator and a modified DAC are proposed to reduce more than 50% power of the overall integrator compared with conventional structure. The 1024 × 768 readout circuit has been fabricated in the 0.18 μm 1P5M CMOS process. Power consumption of the readout circuit is 104mW and each column ADC only consumes 15μW. Simulation results show that the RMS noise of the readout circuit is 0.9LSB and nonlinearity is 0.06% at 30fps.

关键词： Power demand circuits and systems Simulation Linearity CMOS process Silicon

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Vertical‐organic‐nanocrystal‐arrays for crossbar memristors with tuning switching dynamics toward neuromorphic computing

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SmartMat 2021年第1期2卷 99-108页

作者： Fangxu Yang Lingjie Sun Qingxi Duan Huanli Dong Zhaokun Jing Yuchao Yang Rongjin Li Xiaotao Zhang Wenping Hu Leon Chua Key Laboratory of Molecular Optoelectronic Sciences School of ScienceTianjin UniversityTianjinChina Beijing National Research Center for Molecular Sciences Chinese Academy of SciencesBeijingChina Joint School of National University of Singapore and Tianjin University International Campus of Tianjin UniversityBinhai New CityFuzhouChina Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking UniversityBeijingChina Department of Electrical Engineering and Computer Sciences University of CaliforniaBerkeleyCaliforniaUSA

Memristors proposed by Leon Chua provide a new type of memory device for novel neuromorphic computing ***,the approaching of distinct multi‐intermediate states for tunable switching dynamics,the con-trolling of conducting filaments(CFs)toward high device repeatability and reproducibility,and the ability for large‐scale preparation devices,remain full of ***,we show that vertical‐organic‐nanocrystal‐arrays(VONAs)could make a way toward the *** perfect one‐dimensional structure of the VONAs could confine the CFs accurately with fine‐tune resistance states in a broad range of 103 *** availability of large‐area VONAs makes the fabrication of large‐area crossbar memristor arrays facilely,and the analog switching characteristic of the memristors is to effectively imitate different kinds of synaptic plasticity,indicating their great potential in future applications.

关键词： conducting filament memristor organic electronics organic single crystal

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非平衡压缩实现高灵敏度、线性响应协同的离电压力传感器

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Science Bulletin 2024年第14期69卷 2221-2230页

作者：杨静李志斌伍莹沈勇张明陈彬袁国江肖松华冯建松张旭唐毓蔚丁孙安陈晓龙王太宏 Department of Electrical and Electronic Engineering Southern University of Science and TechnologyShenzhen 518055China School of Microelectronics Southern University of Science and TechnologyShenzhen 518055China Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of EducationChangsha Semiconductor Technology and Application Innovation Research InstituteCollege of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China School of Environmental and Chemical Engineering Yanshan UniversityQinhuangdao 066004China School of Integrated Circuits Nanjing UniversitySuzhou 215163China

Flexible pressure sensors with high sensitivity and linearity are highly desirable for robot sensing and human physiological signal ***,the current strategies for stabilizing axial microstructures(e.g.,micro-pyramids)are mainly susceptible to structural stiffening during compression,thereby limiting the realization of high sensitivity and ***,we report a bending-induced nonequilibrium compression process that effectively enhances the compressibility of microstructures,thereby crucially improving the efficiency of interfacial area growth of electric double layer(EDL).Based on this principle,we fabricate an iontronic flexible pressure sensor with vertical graphene(VG)array ***-high sensitivity(185.09 kPa^(-1))and linearity(R^(2)=0.9999)are realized over a wide pressure range(0.49 Pa–66.67 k Pa).It also exhibits remarkable mechanical stability during compression and *** sensor is successfully employed in a robotic gripping task to recognize the targets of different materials and shapes based on a multilayer perception(MLP)neural *** opens the door to realizing haptic sensing capabilities for robotic hands and prosthetic limbs.

关键词： Artificial mechanoreceptor Pressure sensor Vertical grapheme Ionic nanofiber Object recognition E-skin

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Nondestructive visualization of graphene on Pt with methylene blue surface modification

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Science China Materials 2022年第10期65卷 2763-2770页

作者： He Kang Yanhui Zhang Yun Wu Shike Hu Jing Li Zhiying Chen Yanping Sui Shuang Wang Sunwen Zhao Runhan Xiao Guanghui Yu Songang Peng Zhi Jin Xinyu Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device InstituteNanjing 210016China Microwave Devices and Integrated Circuits Department Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

Efficient large-scale nondestructive quality assessment of graphene on Pt is essential to the in-depth growth research and practical applications of ***,we present a very simple method for directly observing the domains and defects in graphene on Pt using an ordinary optical *** was achieved by modifying graphene on Pt using methylene blue(MB).Because the chemical activities of graphene and Pt surface differ significantly,the adsorption and reaction of MB on graphene and platinum surface *** can determine the distribution of graphene crystal domains and defects by comparing the colors in the optical *** addition,this characterization method causes no obvious damage to the Pt substrate and ***,it does not affect the recycling of the substrate or the subsequent characterization or application of *** study provides a nondestructive method for measuring the quality of graphene on Pt on a large scale,as well as a reference for the characterization and doping of other two-dimensional materials.

关键词： graphene Pt nondestructive visualization surface modification methylene blue

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通过高通量研究识别用于本征陡坡晶体管的原子级薄孤立能带沟道材料

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Science Bulletin 2024年第10期69卷 1427-1436页

作者：屈恒泽张胜利曹江吴振华柴扬李卫胜李连忠任文才王欣然曾海波 MIIT Key Laboratory of Advanced Display Materials and Devices College of Material Science and EngineeringNanjing University of Science and TechnologyNanjing 210094China School of Electronic and Optical Engineering Nanjing University of Science and TechnologyNanjing 210094China Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China Department of Applied Physics The Hong Kong Polytechnic UniversityHong Kong 999077China National Laboratory of Solid State Microstructures School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210023China Department of Mechanical Engineering The University of Hong KongHong Kong 999077China Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Integrated Circuits Nanjing UniversitySuzhou 215163China Suzhou Laboratory Suzhou 215009China

Developing low-power FETs holds significant importance in advancing logic circuits,especially as the feature size of MOSFETs approaches sub-10 ***,this has been restricted by the thermionic limitation of SS,which is limited to 60 mV per decade at room ***,we proposed a strategy that utilizes 2D semiconductors with an isolated-band feature as channels to realize subthermionic SS in *** high-throughput calculations,we established a guiding principle that combines the atomic structure and orbital interaction to identify their sub-thermionic transport *** guides us to screen 192 candidates from the 2D material database comprising 1608 ***,the physical relationship between the sub-thermionic transport performances and electronic structures is further revealed,which enables us to predict 15 systems with promising device performances for low-power applications with supply voltage below 0.5 *** work opens a new way for the low-power electronics based on 2D materials and would inspire extensive interests in the experimental exploration of intrinsic steep-slope MOSFETs.

关键词： 2D materials Electronic band structures Transport properties Steep-slope transistors DFT-NEGF calculations

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