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Science Bulletin 2024年第10期69卷 1427-1436页

作者：屈恒泽张胜利曹江吴振华柴扬李卫胜李连忠任文才王欣然曾海波 MIIT Key Laboratory of Advanced Display Materials and Devices College of Material Science and EngineeringNanjing University of Science and TechnologyNanjing 210094China School of Electronic and Optical Engineering Nanjing University of Science and TechnologyNanjing 210094China Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China Department of Applied Physics The Hong Kong Polytechnic UniversityHong Kong 999077China National Laboratory of Solid State Microstructures School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210023China Department of Mechanical Engineering The University of Hong KongHong Kong 999077China Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Integrated Circuits Nanjing UniversitySuzhou 215163China Suzhou Laboratory Suzhou 215009China

Developing low-power FETs holds significant importance in advancing logic circuits,especially as the feature size of MOSFETs approaches sub-10 ***,this has been restricted by the thermionic limitation of SS,which is limited to 60 mV per decade at room ***,we proposed a strategy that utilizes 2D semiconductors with an isolated-band feature as channels to realize subthermionic SS in *** high-throughput calculations,we established a guiding principle that combines the atomic structure and orbital interaction to identify their sub-thermionic transport *** guides us to screen 192 candidates from the 2D material database comprising 1608 ***,the physical relationship between the sub-thermionic transport performances and electronic structures is further revealed,which enables us to predict 15 systems with promising device performances for low-power applications with supply voltage below 0.5 *** work opens a new way for the low-power electronics based on 2D materials and would inspire extensive interests in the experimental exploration of intrinsic steep-slope MOSFETs.

关键词： 2D materials Electronic band structures Transport properties Steep-slope transistors DFT-NEGF calculations

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Applications of MXenes in human-like sensors and actuators

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Nano Research 2023年第4期16卷 5767-5795页

作者： Jinbo Pang Songang Peng Chongyang Hou Xiao Wang Ting Wang Yu Cao Weijia Zhou Ding Sun Kai Wang Mark H.Rümmeli Gianaurelio Cuniberti Hong Liu Institute for Advanced Interdisciplinary Research(iAIR) Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of ShandongUniversity of JinanJinan 250022China Institute for Materials Science and Max Bergmann Center of Biomaterials Technische Universität DresdenDresden 01069Germany Center for Advancing Electronics Dresden Technische Universität DresdenDresden 01069Germany Dresden Center for Computational Materials Science Technische Universität DresdenDresden 01062Germany Dresden Center for Intelligent Materials(GCL DCIM) Technische Universität DresdenDresden 01062Germany High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Shenzhen Key Laboratory of Nanobiomechanics Shenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen 518055China State Key Laboratory of Biobased Material and Green Papermaking Qilu University of TechnologyShandong Academy of SciencesJinan 250353China School of Bioengineering Qilu University of TechnologyShandong Academy of ScienceJinan 250353China Key Laboratory of Modern Power System Simulation and Control&Renewable Energy Technology(Ministry of Education) Northeast Electric Power UniversityJilin 132012China School of Electrical Engineering Northeast Electric Power UniversityJilin 132012China School of Electrical Engineering Weihai Innovation Research InstituteQingdao UniversityQingdao 266000China School of Electrical and Computer Engineering Jilin Jianzhu UniversityChangchun 130118China Institute for Complex Materials Leibniz Institute for Solid State and Materials Research Dresden(IFW Dresden)20 Helmholtz StrasseDresden 01069Germany College of Energy Soochow Institute for Energy and Materials Innovations Soochow UniversitySuzhou 215006China Key L

Human beings perceive the world through the senses of sight,hearing,smell,taste,touch,space,and *** first five senses are prerequisites for people to *** sensing organs upload information to the nervous systems,including the brain,for interpreting the surrounding ***,the brain sends commands to muscles reflexively to react to stimuli,including light,gas,chemicals,sound,and ***,as an emerging two-dimensional material,has been intensively adopted in the applications of various sensors and *** this review,we update the sensors to mimic five primary senses and actuators for stimulating muscles,which employ MXene-based film,membrane,and composite with other functional ***,a brief introduction is delivered for the structure,properties,and synthesis methods of ***,we feed the readers the recent reports on the MXene-derived image sensors as artificial retinas,gas sensors,chemical biosensors,acoustic devices,and tactile sensors for electronic ***,the actuators of MXene-based composite are ***,future opportunities are given to MXene research based on the requirements of artificial intelligence and humanoid robot,which may induce prospects in accompanying healthcare and biomedical engineering applications.

关键词： MXenes sensors actuators gas sensors biosensors tactile sensors sound sensors artificial retina

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Design of a Three-Dimensional Inlet Structure for Preventing Cell Deposition of Microfluidic Flow Cytometry

Design of a Three-Dimensional Inlet Structure for Preventing...

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International Symposium on Next-Generation Electronics (ISNE)

作者： Yu Hu Ya Li Xu Wang Ziqiang Du Wenchang Zhang Xiaonan Yang School of Electrical and Information Engineering Zhengzhou University Zhengzhou China Department of Gastroenterology The First Affiliated Hospital of Zhengzhou University Zhengzhou China Key Laboratory of microelectronic devices and integration technology Institute of Microelectronics of the Chinese Academy Beijing China

Microfluidic flow cytometry has the advantage of simple structure and easy sample handling, with a promising application for point-of-care testing. Long time imaging at low flow rates leads to inlet cell deposition and inaccurate counting. In this paper, we propose a three-dimensional inlet structure that can effectively reduce cell deposition and achieve a smaller dead zone area. First, the geometric design of the structure is presented and the flow path and dead zone distribution of the structure are analysed. Then, the design method and preparation process of the structure are described. In order to test the optimised performance of the structure, analytical experiments were carried out and cell counts were analysed and counted using image detection methods. The results show that the junction structure is able to assist in sample feeding and increase the cell throughput values by approximately 21%.

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Topology Optimization of Random Memristors for Input-Aware Dynamic SNN

arXiv

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arXiv 2024年

作者： Wang, Bo Wang, Shaocong Lin, Ning Li, Yi Yu, Yifei Zhang, Yue Yang, Jichang Wu, Xiaoshan He, Yangu Wang, Songqi Chen, Rui Li, Guoqi Qi, Xiaojuan Wang, Zhongrui Shang, Dashan Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong ACCESS – AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Key Laboratory of Brain Cognition and Brain-inspired Intelligence Technology Institute of Automation Chinese Academy of Sciences Beijing100190 China University of Chinese Academy of Sciences Beijing100049 China

There is unprecedented development in machine learning, exemplified by recent large language models (GPT4) and world simulators (SORA), which are artificial neural networks (ANNs) running on digital computers. However, they still cannot parallel human brains in terms of energy efficiency and the streamlined adaptability to inputs of different difficulties, due to differences in signal representation, optimization, run-time reconfigurability, and hardware architecture. To address these fundamental challenges, we introduce pruning optimization for input-aware dynamic memristive spiking neural network (PRIME). Signal representation-wise, PRIME employs leaky integrate-and-fire neurons to emulate the brain’s inherent spiking mechanism. Drawing inspiration from the brain’s structural plasticity, PRIME optimizes the topology of a random memristive SNN, without expensive memristor conductance fine-tuning. For runtime reconfigurability, inspired by the brain’s dynamic adjustment of computational depth, PRIME employs an input-aware dynamic early stop policy to minimize latency during inference, thereby boosting energy efficiency without compromising performance. Architecture-wise, PRIME leverages memristive in-memory computing, mirroring the brain and mitigating the von Neumann bottleneck. We validated our system using a 40 nm 256 Kb memristor-based in-memory computing macro on neuromorphic image classification and image inpainting. Our results demonstrate the classification accuracy and Inception Score (IS) are comparable to the software baseline, while achieving 37.83× and 62.50× improvements in energy efficiency. Furthermore, we attained 77.0% and 12.5% computational load savings with minimal reduction in performance. The system also exhibits robustness against stochastic synaptic noise of analogue memristors. Our software-hardware co-designed model paves the way to future brain-inspired neuromorphic computing of brain-like energy efficiency and adaptivity. Copyright © 202

关键词： Memristors

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First-Principles Study on the Electronic Properties of Layered Ga2o3/Teo2 Heterolayers for High-Performance Electronic devices

SSRN

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SSRN 2022年

作者： Dong, Linpeng Li, Penghui Zhao, Yan Miao, Yuanhao Peng, Bo Liu, Weiguo Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test Xi'an Technological University Xi'An710032 China Key laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'An710071 China

Layered Ga2O3 with ultra-high electron mobility and wide bandgap has attracted extensive attention. However, the bottleneck of p-type conducting restricts its potential. Here, we investigate the structural, electronic and carrier mobility properties of stacked layered Ga2O3/TeO2 heterolayers on the basis of first-principles calculations. All the investigated heterolayers exhibit high thermodynamic stability and type-II band alignment characteristic. The built-in electric field direction depends on the stacking pattern, which points from layered Ga2O3 to ML (monolayer) TeO2 for AB stacking pattern and reverses for AAꞌ stacking pattern. Both exceptionally high electron and hole mobility are found in layered Ga2O3/TeO2 heterolayers with AB stacking pattern. For BL (bilayer) Ga2O3/TeO2 heterolayer, the μn and μp along a direction are 16977 and 46585 cm2V-1s-1, respectively, and the corresponding mobility along b direction are 19510 and 49870 cm2V-1s-1, respectively. The current-voltage (I-V) curve result of the transistors based on ML Ga2O3/TeO2 heterolayer channel further confirms the enhanced conducting property. All these results indicate that the layered Ga2O3 based heterolayers integrating with ML TeO2 have excellent performance, especially for high-performance photodetectors and transistors. More importantly, our study applies a new strategy to overcome the p-type conducting issue of layered Ga2O3, thus favorable for high-performance photodetectors and transistors. © 2022, The Authors. All rights reserved.

关键词： Gallium compounds

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Highly Sensitive Humidity Sensor Based on Strontium-Doped Lanthanum Ferrite Nanofibers

SSRN

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SSRN 2022年

作者： Zhang, Ziyi Li, Fangxin Zhang, Yuejun Zheng, Yangong Faculty of Electrical Engineering and Computer Science Ningbo University Ningbo315211 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Humidity sensors are the most widely applied sensors. Although some highly sensitive humidity sensors have been explored, devices that can accurately detect low humidity still require development. Improving the chemisorption of water molecules by surface regulation is an effective way to enhance a humidity sensitivity of a device. In this study, we used electrospinning to prepare a series of lanthanum ferrite samples doped with different levels of strontium. Although heavy strontium doping caused amorphous crystallinity in the samples, light doping produced samples with nanofibrous morphology and good crystallinity. When the surface atomic ratio between strontium and lanthanum was approximately 0.2, there was a 6×104 times change in the resistance of the sensor to 90% relative humidity, and the response was 6.76 for 4% relative humidity. Negligible hysteresis, excellent stability, and linear response demonstrate the advantages of the strontium-doped lanthanum ferrite nanofibers regarding resistance measurements. Strontium doping decreased the adsorption energy and increased the charge transfer by redistributing the valence electrons and adjusting the electric field on the surface of lanthanum ferrite. This study provides a new perspective for enhancing the sensitivity of humidity sensors via surface regulation. © 2022, The Authors. All rights reserved.

关键词： Electrospinning

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Highly Sensitive Humidity Sensor Based on Strontium-Doped Lanthanum Ferrite Nanofibers

SSRN

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SSRN 2022年

Humidity sensors are the most widely applied sensors. Although some highly sensitive humidity sensors have been explored, devices that can accurately detect low humidity are still required. Improving the chemisorption of water molecules by surface regulation is an effective way to enhance the humidity sensitivity. In this study, a series of lanthanum ferrite samples doped with different concentrations of strontium was prepared by electrospinning. For the sample with surface atomic ratio between strontium and lanthanum was approximately 0.2, there was a 6´10 4 times change in the resistance of the sensor to 90% relative humidity, and the response was 6.76 for 4% relative humidity. Negligible hysteresis, excellent stability, and linear response demonstrate the advantages of the strontium-doped lanthanum ferrite nanofibers. The sensing mechanism was discussed by measuring the change of band gap and work function of samples with different concentrations of strontium doping. Furthermore, suitable doping also decreased the adsorption energy and increased the charge transfer during the adsorption of water molecules on the surface of lanthanum ferrite based on the calculations. This study provides a new perspective for enhancing the sensitivity of humidity sensors via surface regulation. © 2022, The Authors. All rights reserved.

关键词： Electrospinning

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Optimizing Flash Memory Towards Storage-Class Memory (SCM) Applications

Optimizing Flash Memory Towards Storage-Class Memory (SCM) A...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Xinyi Guo Yang Feng Jing Liu Junyu Zhang Xuepeng Zhan Jixuan Wu Jiezhi Chen School of Information Science and Engineering Shandong University Qingdao P. R. China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing P. R. China Neumem Co. Ltd Hefei P. R. China

ISBN: (数字)9798350361834

ISBN: (纸本)9798350361841

Aiming at the applications of flash memories as storage-class memory (SCM), we did a comprehensive study on the operation schemes of flash cells for fast Program/Erase (PE) cycling, high endurance and read stabilities. By adopting the channel-hot-electron injection (CHEI) and hot-hole injection (HHI) as PE schemes, as large as $\sim 5\mathrm{V}$ memory window (MW) can be realized and the endurance can reach $\sim 10^{6}$ PE cycles. As for 1-bit operation with sub-1V MW, the speed can be as fast as $\sim 10\text{ns}$ and the endurance is over 10 9 PE cycles. Moreover, with the incremental-step-pulse-program (ISPP) method, 64 states (6-bit/cell) with high linearity and robust stabilities could be obtained. Our results demonstrate that there is a large flexibility to optimize flash cells as SCM, especially for the read-intensive applications and energy-efficient computing-in-memory (CiM) architectures.

关键词： Integrated circuit technology Robust stability Linearity Computer architecture Hot carriers Reliability engineering Circuit stability Flash memories Integrated circuit reliability Optimization

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Efficient second-harmonic emission via strong modal overlap in single-resonant lithium niobate nanocavity

arXiv

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arXiv 2025年

作者： Jiang, Zhi Yao, Danyang Gao, Yu Ran, Xu Li, Duomao Zhang, Erqi Wang, Jianguo Gan, Xuetao Zhang, Jinchuan Liu, Fengqi Hao, Yue State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Faculty of Integrated Circuits Xidian University Xi’an710071 China Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technology Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and Technology Northwestern Polytechnical University Xi’an710129 China Laboratory of Solid-State Optoelectronics Information Technology Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China

High-efficiency second-harmonic generation (SHG) in compact integrated photonic systems is crucial for advancing nonlinear optical technologies. However, achieving exceptional conversion efficiencies while maintaining stable performance remains a significant challenge. Here, we report a high-Q single-resonant photonic crystal nanobeam cavity (PCNBC) on a polymer-loaded lithium niobate on insulator (LNOI) platform, which enables bright second-harmonic (SH) emission. Through synergistic optimization of modal confinement and spatial overlap in a y-cut LN architecture, our device achieves a normalized SHG conversion efficiency of 163%/W, outperforming previous LN-based photonic crystal cavities LN-based photonic crystal cavities by over three orders of magnitude. The visible SH emission at 768.77 nm exhibits a single-lobe radiation pattern with precise spectral alignment between fundamental (FH) and second-harmonic (SH) modes, a critical feature for integrated photonic circuits. Remarkably, the conversion efficiency remains stable under thermal variations up to 20°C, addressing a key limitation of multi-resonant systems. High-order cavity modes are directly visualized via CCD imaging, confirming strong spatial overlap. This work establishes a record SHG conversion efficiency for LN microcavities and provides a scalable, temperature-insensitive architecture for nonlinear light sources, with immediate applications in quantum optics and chip-scale interconnects. © 2025, CC BY.

关键词： Quantum optics

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Rectangular suspended single crystal Si nanowire with (001) planes and <001> direction developed via TMAH wet chemical etching

Rectangular suspended single crystal Si nanowire with (001) ...

引用

China Semiconductor Technology International Conference (CSTIC)

作者： Shuang Sun Baotong Zhang Yuancheng Yang Xia An Xiaoyan Xu Ru Huang Ming Li Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

In this study, a kind of rectangular suspended single crystal Si nanowire with (001) planes and along direction is developed via a CMOS-compatible top-down scheme. In this scheme, the nanowires are formed by anisotropic etching of TMAH on different silicon crystallography orientations. By designing the initial orientations of hard mask patterns, the rectangular suspended silicon nanowires can be successfully fabricated without any sacrificial epitaxial layers. Due to the damage-free process and the high mobility on (001) planes, this scheme will provide a high-quality channel for the future gate-alI-around silicon transistor technology.

关键词： Epitaxial layers Logic gates Silicon Etching Transistors Crystallography Chemicals

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