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arXiv 2024年

作者： Jiang, Zhi Yao, Danyang Ran, Xu Gao, Yu Wang, Jianguo Gan, Xuetao Liu, Yan Hao, Yue Han, Genquan State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Faculty of integrated circuits Xidian University Xi'An710071 China Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technology Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and Technology Northwestern Polytechnical University Xi'An710129 China Hangzhou Institute of Technology Xidian University Hangzhou311200 China

On chip acousto-optic (AO) modulation represents a significant advancement in the development of highly integrated information processing systems. However, conventional photonic devices face substantial challenges in achieving efficient conversion due to the limited overlap between acoustic waves and optical waves. In this study, we address this limitation by demonstrating an enhanced conversion effect of photonic crystal nanobeam cavities (PCNBCs) in AO modulation on a polymer-loaded lithium niobate integrated platform. Attributed to the high ratio of quality factor (Q) to mode volume (V) and optimal light-sound overlap within the nanocavity, PCNBCs-based AO modulator exhibits a significantly enhanced extinction ratio of 38 dB with a threshold RF power below -50 dBm, which is two orders of magnitude lower than that based on micro-ring resonator (MRRs). In addition, robust digital amplitude shift keying modulations using selected RF and optical channels of the PCNBCs-enhanced AO modulators. These findings validate the compelling properties of the PCNBCs photonic platform, establishing it as a promising candidate for on-chip integrated microwave photonics, optical transceivers, and computing applications. © 2024, CC BY.

关键词： Amplitude shift keying

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Perpendicular magnetic anisotropy in as-deposited CoFeB/MgO thin films

arXiv

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arXiv 2022年

作者： Lou, Kaihua Xie, Tunan Zhao, Qianwen Jiang, Baiqing Xia, ChaoChao Zhang, Hanying Yao, Zhihong Bi, Chong Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China School of Microelectronics University of Science and Technology of China Hefei230026 China

Fabrication of perpendicularly magnetized ferromagnetic films on various buffer layers, especially on numerous newly discovered spin-orbit torque (SOT) materials to construct energy-efficient spin-orbitronic devices, is a long-standing challenge. Even for the widely used CoFeB/MgO structures, perpendicular magnetic anisotropy (PMA) can only be established on limited buffer layers through post-annealing above 300 °C. Here, we report that the PMA of CoFeB/MgO films can be established reliably on various buffer layers in the absence of post-annealing. Further results show that precise control of MgO thickness, which determines oxygen diffusion in the underneath CoFeB layer, is the key to obtaining the as-deposited PMA. Interestingly, contrary to previous understanding, post-annealing does not influence the well-established as-deposited PMA significantly but indeed enhances unsaturated PMA with a thick MgO layer by modulating oxygen distributions, rather than crystallinity or Co- and Fe-O bonding. Moreover, our results indicate that oxygen diffusion also plays a critical role in the PMA degradation at high temperature. These results provide a practical approach to build spin-orbitronic devices based on various high-efficient SOT materials. © 2022, CC BY.

关键词： Buffer layers

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Integrated plasmonic ruler using terahertz multi-BIC metasurface for digital biosensing

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Moore and More 2025年第1期2卷 1-13页

作者： Ren, Qun Jia, Sheng Li, Jingtong He, Liu Xu, Yan Huang, Hao Wang, Xiaoman Ooi, ZherYian Liang, Yongshan Zhang, Yaoyin Xu, Hang Zhang, Zhang You, Jianwei Sha, Wei E. I. Yao, Jianquan School of Electrical and Information Engineering Tianjin University Tianjin China Department of Ultrasound Diagnosis and Treatment Tianjin Medical University Cancer Institute and Hospital Tianjin China Key Laboratory of Opto-Electronics Information Technology Ministry of Education School of Precision Instruments and Opto-Electronics Engineering Tianjin University Tianjin China Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology School of Microelectronics Tianjin University Tianjin China School of Electronic and Information Engineering Changshu Institute of Technology Jiangsu China State Key Laboratory of Millimeter Waves School of Information Science and Engineering Southeast University Nanjing China Key Laboratory of Micro-Nano Electronic Devices and Smart Systems of Zhejiang Province College of Information Science and Electronic Engineering Zhejiang University Hangzhou China

In recent years, continuous bound states in the continuum (BIC) have gained significant attention for their practical applications in optics, chip technology, and modern communication. Traditional approaches to realizing and analyzing BIC typically rely on magnetic dipole models, which have limitations in quantitative analysis and integration. This creates a gap in understanding how to efficiently harness BIC with higher Q-factors for enhanced performance in real-world applications, particularly in scenarios involving terahertz imaging and multi-channel communication. In this study, we introduce a novel approach using a metallic resonator model that leverages toroidal dipole moments to generate symmetry-protected BIC with high Q-factors. By systematically varying the asymmetry parameters of the metasurface, we gradually break its symmetry, achieving a transition from the BIC mode to the quasi-BIC mode and facilitating the gradual release of stored electromagnetic energy. Our theoretical analysis confirms the existence and generation of BIC, and experimental measurements of the transmission response spectrum validate these theoretical predictions. The results indicate that terahertz metasurface with high Q-factors can produce strong resonances at specific frequencies, enhancing resistance to electromagnetic interference and ensuring stable imaging quality in complex environments. Additionally, this study suggests the potential for an integrated plasmonic ruler to achieve high-resolution and efficient biological imaging. These findings bridge the gap by demonstrating how high Q-factor BIC can be effectively utilized for multi-channel terahertz dynamic imaging and biosensing applications. This advancement lays a new foundation for developing robust systems in multi-channel communication and biomedical sensing, offering significant potential for future technological and medical innovations.

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A Low Noise 384×288 Uncooled Infrared Imager Based on Phase Difference Modulation

A Low Noise 384×288 Uncooled Infrared Imager Based on Phase...

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IEEE International Symposium on circuits and Systems (ISCAS)

作者： Xueyou Shi Shanzhe Yu Guangyi Chen Yacong Zhang Zhongjian Chen Wengao Lu Key Laboratory of Microelectronic Devices and Circuits Peking University China Peking University Information Technology Institute (Tianjin Binhai) China

ISBN: (纸本)9781728192017;9781728192024

This paper presents an uncooled infrared imager with flicker noise reduction, which is realized by the proposed phase difference modulation (PDM) method. The PDM method makes noise transfer function (NTF) generate a series of notches to reduce flicker noise. To realize PDM, a high-speed sub-frame readout circuit is proposed. The readout circuit has been manufactured and the output data is processed with FPGA. The measurement results show that the flicker noise power in the frequency range above 10Hz is reduced by 42% compared with traditional method at 60fps full image output rate, and the noise equivalent temperature difference (NETD) is reduced from 40mK to 34mK.

关键词： Temperature measurement Power measurement Phase modulation Transfer functions Frequency measurement Noise measurement 1f noise

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Temperature-dependent Defect Behaviors in Ferroelectric Hf0.5Zr0.5O2 Thin Film: Re-wakeup Phenomenon and Underlying Mechanisms

Temperature-dependent Defect Behaviors in Ferroelectric Hf0....

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International Electron devices Meeting (IEDM)

作者： Xiaopeng Li Jixuan Wu Lu Tai Wei Wei Pengpeng Sang Yang Feng Bo Chen Guoqing Zhao Xuepeng Zhan Xiaolei Wang Masaharu Kobayashi Jiezhi Chen School of Information Science and Engineering Shandong University Qingdao China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China Institute of Industrial Science the University of Tokyo Japan

ISBN: (纸本)9781665489607

Aiming at deep insights into the defect behaviors in the ferroelectric HZO thin film, we present a systematical study on the reliability property of $7\mathrm{~nm}$ HZO capacitor at the high-temperature range $(300\sim 420\mathrm{~K})$. For the first time, the rewakeup phenomenon is observed with cycling operation at high temperatures. By characterization on the switching time, fatigue rate, and leakage currents, the underlying defect-related mechanisms are discussed. It is considered that defects at grain boundaries could be an important reason because the trapped positive charge will induce the dipole pinning during the fatigue stage, but stronger electron injection (higher leakage) can release this pinning and cause the re-wakeup phenomenon. Our results strongly indicate that grain boundary engineering could be the key to ultra-thin HZO optimizations.

关键词： Temperature measurement Grain boundaries Temperature distribution Solid modeling Capacitors Fatigue Data models

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Implementation of Lateral Divisive Inhibition Based on Ferroelectric Fet with Ultra-Low Hardware Cost for Neuromorphic Computing

Implementation of Lateral Divisive Inhibition Based on Ferro...

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China Semiconductor Technology International Conference (CSTIC)

作者： Shuhan Liu Tianyi Liu Zhiyuan Fu Cheng Chen Qianqian Huang Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

In this work, a novel bio-inspired hardware design of lateral divisive inhibition is proposed and demonstrated by using only one transistor of ferroelectric FET. The proposed design is simulated based on our developed FeFET model, and is also proved to be functional in spiking neural network. The new design with ultra-low hardware cost exhibits good biological plausibility, showing its great potential for neuromorphic computing.

关键词： Neuromorphic engineering Computational modeling Biological system modeling Neural networks Hardware Transistors Task analysis

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Physical Insights into the Impact of Internal Metal Gate on the Subthreshold Behavior of NCFET Based on Domain Switching Dynamics

Physical Insights into the Impact of Internal Metal Gate on ...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Tianyue Fu Qianqian Huang Liang Chen Chang Su Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

In this work, the influences of the internal metal of gate stack in Negative Capacitance FET (NCFET) are clarified based on domain switching dynamics physically. By analyzing the equivalent ferroelectric (FE)/dielectric (DE) series capacitor, a new method is proposed to study the domain switching process for metal-ferroelectric-insulator-metal (MFIM) structure. Our results illustrate that NC effect of FE/DE series capacitor is closely related to the switching capabilities of FE layer, embodied by the distribution of switching activation field Ea of domains, which also provide the design direction of FE layer for the subthreshold swing optimization of NCFET.

关键词： Switches Iron Logic gates Capacitors Periodic structures Optimization Electric potential

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A Low-Jitter and Low-Reference-Spur 320 GHz Signal Source With an 80 GHz Integer-N Phase-Locked Loop Using a Quadrature XOR Technique

A Low-Jitter and Low-Reference-Spur 320 GHz Signal Source Wi...

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作者： Liang, Yuan Boon, Chirn Chye Qi, Gengzhen Dziallas, Giannino Kissinger, Dietmar Ng, Herman Jalli Mak, Pui-In Wang, Yong Nanyang Technological University School of Electrical and Electronic Engineering Singapore639798 Singapore Sun Yat-sen University School of Microelectronics Science and Technology Zhuhai519082 China State-Key Laboratory of Analog and Mixed-Signal VLSI Institute of Microelectronics University of Macau China Leibniz Institute for High Performance Microelectronics Frankfurt an der Oder 15236 Germany Institute of Electronic Devices and Circuits Ulm University Ulm89081 Germany Karlsruhe University of Applied Sciences Faculty of Electrical Engineering and Information Technology Karlsruhe76133 Germany University of Electronic Science and Technology of China School of Information and Communication Engineering Chengdu611731 China Nanhu Laboratory Jiaxing314002 China

This article reports a 320-GHz low-jitter and low-reference-spur signal source consisting of an 80-GHz integer- N phase-locked loop (PLL) and a 320-GHz frequency quadrupler. The 80-GHz PLL features a novel dual-path quadrature exclusive-OR (QXOR) technique to cancel the spurs at the reference frequency and its harmonics, enabling low-spur and low-noise phase locking. The proposed phase detector (PD) also enables frequency detection and lock detection (LD), rendering the band-searching to be decoupled from the loop components. Implemented in a 0.13- \mu \text{m} SiGe BiCMOS technology, the proposed signal source shows a -73.1-dBc reference spur, -113.7-dB/Hz phase noise at 1-MHz offset at 40.96 GHz, and -90.3-dB/Hz phase noise at 1-MHz offset at 311.8 GHz. It achieves an integrated jitter of 66.9 fsrms at 40.96 GHz and 122 fsrms (both integrated from 10 kHz to 100 MHz) beyond 300 GHz, with a total division ratio of 512. The LD time is at the microsecond level. The maximum output power is -3.24 dBm, and the power consumption is 372 mW. © 1963-2012 IEEE.

关键词： Phase locked loops

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Origin of Steep Subthreshold Swing Within the Low Drain Current Range in Negative Capacitance Field Effect Transistor

Origin of Steep Subthreshold Swing Within the Low Drain Curr...

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China Semiconductor Technology International Conference (CSTIC)

作者： Chang Su Qianqian Huang Mengxuan Yang Liang Chen Zhongxin Liang Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing CHINA

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

Negative capacitance FET (NCFET) can achieve the steeper subthreshold swing (SS) than conventional MOSFET for the reduction of supply voltage V DD , while many experimental results indicate that NCFETs show the steeper SS only within a limited drain current range. In this work, the physical origin and parameter impacts of drain current range corresponding to steeper SS in NCFET are investigated, based on the modeling of domain switching dynamics of ferroelectric (FE). It is found that the larger remnant polarization is beneficial for the steeper SS with the larger drain current range. Besides, simulation results indicate that only within the limited window of sweeping rate and FE switching time, the drain current range can be enlarged for the steeper switching in NCFET.

关键词： MOSFET Simulation Switches Capacitance Iron Hafnium compounds Switching circuits

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Device Modeling and Application Simulation of Ferroelectric-FETS with Dynamic Multi-Domain Behavior

Device Modeling and Application Simulation of Ferroelectric-...

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China Semiconductor Technology International Conference (CSTIC)

作者： Zhiyuan Fu Cheng Chen Jin Luo Qianqian Huang Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing CHINA

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

In this work, a ferroelectric-FET (FeFET) model based on multi-domain Preisach theory is developed. Instead of the single-domain Landau-Khalatnikvo (L-K) and tanh based model, the Preisach model with dynamic module is established to accurately model the dynamic behavior of multi-domain FeFET. Moreover, a FeFET-based neuron structure is presented and simulated based on the developed device model, showing the promising potential of FeFET for neuromorphic computing.

关键词： Semiconductor device modeling Neuromorphic engineering Computational modeling Neurons

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