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23.1: Controllable Growth of Conjugated Polymer Monolayer: from Field-Effect Transistors to Integrated circuits

SID Symposium Digest of Technical Papers 2023年第S1期54卷

作者： Chenming Ding Congyan Lu Mengmeng Li Ling Li Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China 100029 University of Chinese Academy of Sciences Beijing China 100049

The charge transport of planar organic field-effect transistors (FETs) occurs in the nearest molecular layer to the dielectric layer. Therefore, organic monolayer FETs with two-dimensional transport properties have been widely studied, and is considered to be promising for applications in bottom-up integrated circuits. Based on the semiconducting polymer PffBT4T-2DT, we fabricate the high-performance monolayer FETs and unipolar inverters. Resultant polymer monolayer FETs exhibited excellent and uniform performance with a 10 7 on/off current ratio and ultra-low leakage current with a magnitude of 10 -12 A. More importantly, the corresponding intrinsic gain of 1000 V/V is achieved, which surpass Si MOSFET. Zero-VGS inverters based on these polymer monolayer FETs exhibit steep level transitions with a voltage gain of 70 V/V, which is among the record for inverters based on organic monolayer.

关键词： Polymer monolayer organic field-effect transistor organic analog circuits unipolar inverter

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Impact of gate length on the electrical characteristics of junctionless FDSOI strained SiGe channel p-FinFET

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Journal of Materials Science: Materials in Electronics 2025年第15期36卷

作者： Lin, Hongxiao Miao, Yuanhao Ren, Yuhui Zhang, Yongkui Zhang, Qingzhu Xiong, Wenjuan Yu, Jiahan Zhao, Xuewei Liang, Renrong Xu, Jun Ye, Tianchun Radamson, Henry H. Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Research and Development Center of Optoelectronic Hybrid IC Guangdong Greater Bay Area Institute of Integrated Circuit and System Guangzhou510535 China School of Microelectronics University of Chinese Academy of Sciences Beijing100049 China School of Integrated Circuits Tsinghua University Beijing100086 China

In this work, we present the influence of structure design on the performance of novel fully depleted silicon-on-insulator (FDSOI) SiGe p-type FinFETs. The effects of Ge content, strain in the epitaxial SiGe channel and gate length (LG) on the device’s electrical characteristics are systematically studied. Among the studied SiGe compositions, Si0.75Ge0.25 exhibits superior performance over Si0.7Ge0.3, as the latter shows the increased defect density due to strain relaxation, degrading carrier transport and the overall device performance. The strain in the Si0.75Ge0.25 channel is tailored to be 0.65% according to the nano beam diffraction (NBD) results, which enhances carrier mobility and drive current (Ion). As the LG decreases from 500 to 30 nm, the device exhibits a well-balanced trade-off between high drive current and low leakage current, demonstrating the effectiveness of the proposed device structure, while the subthreshold swing (SS) shows a progressive deterioration with decreasing LG, reflecting the growing impact of short-channel effects and interface states. At LG = 30 nm, the drain current (Id), maximum transconductance (Gm, max), and Ion/Ioff ratio can reach up to 0.19mA/μm, 33.2μS/μm, and 6.9 × 105, respectively. These improvements were attributed to the enhanced hole mobility from strain engineering and the superior electrostatic control of the junctionless architecture. Our work provides valuable insights into the optimization of junctionless FDSOI FinFETs, enhancing their potential for low-power, high-performance semiconductor applications in the beyond Moore era. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2025.

关键词： FinFET

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Role of Carbon Pre-Germanidation Implantation on Enhancing the Thermal Stability of NiGe Films below 10 nm Thickness

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ECS Journal of Solid State Science and Technology 2020年第5期9卷

作者： Liu, Yaodong Xu, Jing Liu, Jinbiao Wang, Guilei Luo, Xue Zhang, Dan Mao, Shujuan Li, Yongliang Li, Junfeng Zhao, Chao Wang, Wenwu Gao, Bo Chen, Dapeng Ye, Tianchun Luo, Jun Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Beijing100049 China

The effects of carbon on improving the thermal stability of relatively thick NiGe films were manifested in previous work. How this thermal stability can be maintained for ultrathin NiGe films i.e. below 10 nm thickness, is, however, still unknown and deserves to be explored. In this work, the effects of carbon Pre-Germanidation Implantation (PGI) on the thermal stability of ultrathin NiGe films below 10 nm thickness were systematically studied. For different thicknesses of Ni layers, as-prepared NiGe films with carbon PGI were characterized by beans of sheet resistance measurement, X-ray diffraction (XRD), scanning electron microscopy (SEM) and secondary ion mass spectroscopy (SIMS). The presence of carbon is proved to be still effective in enhancing the thermal stability of ultrathin NiGe films by ∼200 °C compared to the counterparts without C. The homogeneously distributed C at NiGe grain boundaries and C peak at the NiGe/Ge interface is responsible for such a distinguished improved thermal stability. © 2020 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.

关键词： Germanium alloys

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Study on Simulation and Profile Prediction of Atomic Layer Deposition

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Journal of microelectronic Manufacturing 2020年第3期3卷 18-27页

作者： Lei Qu Chen Li Jiang Yan Rui Chen Jing Zhang Yanrong Wang Yayi Wei North China University of Technology Beijing 100144 Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029

The Atomic Layer Deposition process(ALD)is widely used in FinFET,3D-NAND and other important technologies because of its self-limiting signature and low growth *** recent years,the development of computer enables chances for ALD process simulation in order to improve the process R&D *** this paper,steady state theory and vacuum pump theory are implemented to develop the growth rate algorithm of atomic layer *** dynamic evolution of the deposition profile is realized based on cellular automata method,and fits the relationship between temperature and growth rate in HfO2 *** model accuracy and simulation results are verified with high *** on the simulation results of this model,the influence of different substrate size and environmental dose on growth rate of pore structure is studied and *** the case of deep hole,high depth-to-width ratio hole,or when the gas entry time is below saturation,the growth rate decreases at the pore ***,the simulation considering the angle-of-inclination of the hole’s tapered sidewall indicates that the greater the angle,the better the distribution of flux.

关键词： Atomic Layer Deposition process simulation profile model temperature fitting film of HfO2

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High-Mobility Polymer Monolayer Field-Effect Transistors with Graphene Electrodes 2

High-Mobility Polymer Monolayer Field-Effect Transistors wit...

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2nd IEEE International Conference on Integrated circuits, Technologies and Applications, ICTA 2019

作者： Li, Mengmeng Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9781728151670

Polymer monolayer field-effect transistors provide an excellent platform to investigate the charge transport mechanism, however, most studies only reported the mobility of ≤ 10-2cm-2 V-1 S-1. This study select the graphene as electrode materials, significantly improving the morphology of polymer monolayer at the edge of the electrodes. As a result, a maximum saturated mobility of 0.73 cm-2 V-1S-1is obtained. Additionally, the channel length is found to have minor effect on the charge transport ranging from 20 to 100 μm. © 2019 IEEE.

关键词： Field effect transistors

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A flexible nickel phthalocyanine resistive random access memory with multi-level data storage capability

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Journal of Materials Science & Technology 2021年第27期86卷 151-157页

作者： Tariq Aziz Yun Sun Zu-Heng Wu Mustafa Haider Ting-Yu Qu Azim Khan Chao Zhen Qi Liu Hui-Ming Cheng Dong-Ming Sun Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of Sciences72 Wenhua RoadShenyang110016China University of Chinese Academy of Sciences 19A Yuquan RoadBeijing100049China School of Material Science and Engineering University of Science and Technology of China72 Wenhua RoadShenyang110016China Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences3 Bei-Tu-Cheng West RoadBeijing100029China Pak-Austria Fachhochschule:Institute of Applied Sciences and Technology MangKhanpur RoadHaripurKPKPakistan NUS Graduate School Integrative Sciences and Engineering ProgrammeNational University of Singapore119077Singapore Frontier Institute of Chip and System Fudan University2005 Songhu RoadShanghai 200433China Shenzhen Geim Graphene Center Shenzhen International Graduate SchoolTsinghua University1001 Xueyuan RoadShenzhen518055China

Metal phthalocyanine is considered one of the most promising candidates for the design and fabrication of flexible resistive random access memory(RRAM)devices due to its intrinsic flexibility and excellent ***,performance degradation and the lack of multi-level capability,which can directly expand the storage capacity in one memory cell without sacrificing additional layout area,are the primary obstacles to the use of metal phthalocyanine RRAMs in information ***,a flexible RRAM with pristine nickel phthalocyanine(Ni Pc)as the resistive layer is reported for multi-level data *** to its high trap-concentration,the charge transport behavior of the device agrees well with classical space charge limited conduction controlled by traps,leading to an excellent performance,including a high on-off current ratio of 10^(7),a long-term retention of 10^(6)s,a reproducible endurance over6000 cycles,long-term flexibility at a bending strain of 0.6%,a write speed of 50 ns under sequential bias pulses and the capability of multi-level data storage with reliable retention and uniformity.

关键词： Flexible Metal phthalocyanine Resistive random access memory Multi-level

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High sensitivity ultraviolet graphene-metamaterial integrated electro-optic modulator enhanced by superlubricity

arXiv

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arXiv 2022年

作者： Xu, Yan-Li Li, Wei-Min Li, Rong Liu, Jiang-Tao Liu, Ze Wu, Zhen-Hua College Of Mechanical And Electrical Engineering Guizhou Minzu University Guiyang550025 China Key Laboratory Of Microelectronic Devices And Integrated Technology Institute Of Microelectronics Chinese Academy Of Sciences Beijing100029 China Department Of Engineering Mechanics School Of Civil Engineering Wuhan University Wuhan430072 China University Of Chinese Academy Of Sciences Beijing100029 China

Ultraviolet (UV) electro-optic modulation system based on grapheneplasmonic metamaterials nanomechanical system (NEMS) with superlubricity is investigated. Due to the strong optical absorption intensity of graphene in the UV region and the combination of metamaterial structure based on surface plasmons, the modulation depth of the UV NEMS electro-optic modulator approaches as high as 8.5 times compared to the counterpart modulator in visible light region. Meanwhile, the superlubricity significantly reduces the power consumption of the UV electro-optic modulation system due to its extremely low friction coefficient. It also significantly improves the response speed of the modulator, which can reach the order of a nanosecond. The modulation voltage can be lower than 200 mV. The proposed electro-optic modulation system has a simple structure and high sensitivity, which is supposed to have important applications in UV optoelectronic devices and systems. Copyright © 2022, The Authors. All rights reserved.

关键词： Light modulation

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Voltage-control oscillator based on Pt/C/NbO_x/TiN device with highly improved threshold switching performances

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Science China(Physics,Mechanics & Astronomy) 2019年第12期62卷 126-129页

作者： Wei Wang ZuHeng Wu Tuo Shi YongZhou Wang Sen Liu RongRong Cao Hui Xu Qi Liu QingJiang Li College of Electronic Science and Technology National University of Defense TechnologyChangsha 410073China Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

Oscillator is a common key component of electronic *** periodic signal produced by the oscillator is generally required in various applications,such as the electronic system clock,electronic neurons,and the true random number generator system[1-6].Capacitors and inductors are usually utilized to generate periodic waveforms in the traditional oscillator,which greatly reduces integration and cannot be packaged into chips[2].Oscillators based on a memristor have been proposed as a solution to these issues[7-14].The memristor has attracted great attention and has been widely applied in many fields,such as memory,com?puting,security,etc.

关键词： oscillator system electronic

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All-Linear Multistate Magnetic Switching Induced by Electrical Current

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Physical Review Applied 2021年第5期15卷 054013-054013页

作者： Meiyin Yang Yanru Li Jun Luo Yongcheng Deng Nan Zhang Xueying Zhang Shaoxin Li Yan Cui Peiyue Yu Tengzhi Yang Yu Sheng Sumei Wang Jing Xu Chao Zhao Kaiyou Wang Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences (IMECAS) Beijing 100029 China University of Chinese Academy of Sciences (UCAS) Beijing 100049 China SKLSM Institute of Semiconductors CAS P.O. Box 912 Beijing 100083 China Beihang-Goertek Joint Microelectronics Institute Qingdao Research Institute Beihang University Qingdao 266101 China Beijing Academy of Quantum Information Sciences Beijing 100193 China

We present an alternative mechanism to control domain wall motion, whose directions are manipulated by the amplitude of electrical current rather than its sign when modulating the exchange stiffness A while maintaining the Dzyaloshinskii-Moriya interaction constant D. To confirm this mechanism, we observe this type of domain wall motion and demonstrate linear magnetic switching without hysteresis effect via adjusting A of a Ta/Pt/Co/Ta multilayer device with ion implantations. We further find field-free biased and chirally controllable multistate switching at the lateral interface of ion exposed and unexposed areas, which is due to current-induced Néel wall motion and a strong exchange coupling at this interface.

关键词： Domain walls Magnetic interactions Magnetization switching Spin torque Surface & interfacial phenomena Magnetic multilayers Magnetization measurements Micromagnetic modeling

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MXenes induce epitaxial growth of size-controlled noble nanometals:A case study for surface enhanced Raman scattering(SERS)

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Journal of Materials Science & Technology 2020年第5期40卷 119-127页

作者： Renfei Cheng Tao Hu Minmin Hu Changji Li Yan Liang Zuohua Wang Hui Zhang Muchan Li Hailong Wang Hongxia Lu Yunyi Fu Hongwang Zhang Quan-Hong Yang Xiaohui Wang Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Materials Science and Engineering University of Science and Technology of ChinaShenyang 110016China University of Chinese Academy of Sciences Beijing 100049China National Engineering Research Center for Equipment and Technology of Cold Strip Rolling College of Mechanical EngineeringYanshan UniversityQinhuangdao 066004China Department of Materials Science and Engineering Monash UniversityClaytonVictoria 3800Australia Institute of Microelectronics Key Laboratory of Microelectronic Devices and CircuitsPeking UniversityBeijing 100871China School of Materials Science and Engineering Zhengzhou UniversityZhengzhou 450001China School of Chemical Engineering&Technology Tianjin UniversityTianjin 300072China

Noble nanometals are of significance in both scientific interest and technological applications,which are usually obtained by conventional wet-chemical *** surfactants are always used in the synthesis to prevent unexpected overgrowth and aggregation of noble ***,the surfactants are hard to remove and may interfere with plasmonic and catalytic studies,remaining surfactant-free synthesis of noble nanometals a ***,we report an approach to epitaxial growth of sizecontrolled noble nanometals on *** piloted by density functional theory calculations,along with work function experimental determination,kinetic and spectroscopic studies,epitaxial growth of noble nanometals is initiated via a mechanism that involves an in situ redox *** the redox,MXenes as two-dimensional solid reductants whose work functions are compatible with the reduction potentials of noble metal cations,enable spontaneous donation of electrons from the MXenes to noble metal cations and reduce the cations into nanoscale metallic metals on the outmost surface of *** surfactants nor external reductants are used during the whole synthesis process,which addresses a long-standing interference issue of surfactant and external reductant in the conventional wet-chemical ***,the MXenes induced noble nanometals are ***,noble nanometals firmly anchored on MXenes exhibit excellent performance towards surface enhanced Raman *** developed strategy will promote the nanostructure-controlled synthesis of noble nanometals,offering new opportunities to further improve advanced functional properties towards practical applications.

关键词： Two-dimensional materials MXene In situ redox Noble metal SERS

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