检索结果-内蒙古大学图书馆

CMOS-compatible wafer-scale Si subulate array for superb switching uniformity of RRAM with localized nanofilaments

Science China Materials 2022年第6期65卷 1623-1630页

作者： Ying Zhang Xiaolong Zhao Xiaolan Ma Yu Liu Xuanze Zhou Meiyun Zhang Guangwei Xu Shibing Long Key Laboratory of Microelectronic Devices&Integration Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China School of Microelectronics University of Science and Technology of ChinaHefei 230026China University of Chinese Academy of Sciences Beijing 100049China

Resistive switching random access memory(RRAM)is one of the most promising candidates with highdensity three-dimensional integration characteristics for nextgeneration nonvolatile memory ***,the poor uniformity issue caused by the stochastic property of the conductive filament(CF)impedes the large-scale manufacture of RRAM *** array has been introduced into the RRAM to minimize the CF randomness,but the methods are cumbersome,expensive,or resolution-limited for large-scale *** this work,Si subulate array(SSA)substrates with different curvature radii prepared by a wafer-scale and nanoscale-controllable method are introduced for RRAM *** SSA structure,which induces a quasi-single CF or a few CFs formed in the tip region(TR)of the device as evidenced by the high-resolution transmission electron microscopy and energy dispersive spectroscopy characterization,dramatically improves the cycle-to-cycle and device-to-device *** the curvature radius of the TR significantly improves the device performance,including switching voltages,high/low resistance states,and retention *** improved uniformity can be attributed to the enhanced local electric field in the *** proposed SSA provides a low-cost,uniform,CMOS-compatible,and nanoscale-controllable optimization strategy for the largescale integration of highly uniform RRAM devices.

关键词： resistive switching memristor RRAM Si subulate array enhancement of electric field

来源：评论

学校读者我要写书评

暂无评论

High-spatiotemporal-resolution chip analysis using a fiber-coupled quantum sensor based on diamond N-V centers

引用

Physical Review Applied 2025年第2期23卷 024050-024050页

作者： Youwei Liu Fazhan Zhao Jing Li Zhenfeng Li Lei Wang Bo Li Key Laboratory of Science and Technology on Silicon Devices Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China School of Integrated Circuits University of Chinese Academy of Sciences 101408 Beijing China Communication and Information Engineering Center Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China

We propose a chip analysis method using a fiber-optic quantum sensor based on diamond nitrogen-vacancy (N-V) centers to capture the magnetic field associated with short-pulse currents in chips. The fiber-coupled diamond N-V sensor was precisely positioned at the target region of the chip. We performed real-time monitoring of the N-V center fluorescence responses to pulsing magnetic fields generated by the pulse signals in the test chip through continuous-wave optically detected magnetic resonance. This allowed the accurate reconstruction of the chip internal node signal variations. We successfully achieved a time resolution of 200 ns, which was consistent with the metastable state lifetime of the N-V centers at room temperature. Furthermore, we evaluated the shot noise–limited magnetic sensitivity, which was found to be 6.3nT/Hz1/2. The proposed system exhibited swift responsivity to short pulse currents in the chip, providing highly accurate spatial localization of magnetic field variations. It satisfied the demand for rapid response and precise positioning in chip testing. Overall, this study validates the potential application of N-V centers in the domain of chip security analysis, offering a solution for chip diagnostics.

关键词： Quantum optics

来源：评论

学校读者我要写书评

暂无评论

F3: An FPGA-based Transformer Fine-tuning Accelerator with Flexible Floating Point Format

引用

IEEE Journal on Emerging and Selected Topics in circuits and Systems 2025年

作者： He, Zerong Liu, Jing Jin, Xi Xu, Zhongguang Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Beijing100029 China University of Science and Technology of China School of Physical Science Anhui Hefei230022 China University of Science and Technology of China School of Microelectronics Anhui Hefei230026 China

Transformers have demonstrated remarkable success across various deep learning tasks. However, their inference and fine-tuning require substantial computation and memory resources, posing challenges for existing hardware platforms, particularly resource-constrained edge devices. To address these limitations, we propose F3, an FPGA-based accelerator for transformer fine-tuning. To reduce computation and memory overhead, this paper proposes a flexible floating point (FFP) format which consumes fewer resources than traditional floating-point formats of the same bitwidth. We adapt low-rank adaptation to FFP format and propose a fine-tuning strategy named LR-FFP which reduces the number of trainable parameters without compromising fine-tuning accuracy. At the hardware level, we design specialized processing elements (PEs) for the FFP format. The PE maximizes the utilization of DSP resources, enabling a single DSP to perform two multiply-accumulate operations per cycle. The PEs are organized into a systolic array (SA) to efficiently handle general matrix multiplication during fine-tuning. Through theoretical analysis and experimental evaluation, we determine the optimal dataflow and SA parameters to balance performance and resource consumption. We implement the architecture on the Xilinx VCU128 FPGA platform and F3 achieves a performance of 8.2 TFlops at 250 MHz. Compared with CPU and GPU implementations, F3 achieves speedups of 15.22× and 3.44×, respectively, and energy efficiency improvements of 70.52× and 9.44×. © 2011 IEEE.

关键词： Systolic arrays

来源：评论

学校读者我要写书评

暂无评论

Study on the Anomalous Characteristics of Random Telegraph Noise in FeFETs

Study on the Anomalous Characteristics of Random Telegraph N...

引用

IEEE Silicon Nanoelectronics Workshop (SNW)

作者： Puyang Cai Yishan Wu Zixuan Sun Hao Li Xiaolei Wang Zhigang Ji Runsheng Wang Ru Huang School of Integrated Circuits Peking University Beijing China National Key Laboratory of Advanced Micro and Nano Manufacture Technology Shanghai Jiaotong University Shanghai China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences China Beijing

ISBN: (数字)9798350391633

ISBN: (纸本)9798350391640

In this work, we investigate the behavior of random telegraph noise (RTN) in HfO 2 -based FeFETs. Anomalously high location factors of RTN in FeFETs are observed for the first time, which can be successfully explained by the lateral domain wall motion, with the help of a dynamic 2-D phase-field simulation. This work reveals the unique characteristics of RTN in HfO 2 -based FeFETs and provides insight into the ferroelectric switching process.

关键词： Conferences Noise Dynamics Switches Hafnium oxide Silicon FeFETs

来源：评论

学校读者我要写书评

暂无评论

Operation Scheme Optimizations to Achieve Ultra-high Endurance (1010) in Flash Memory with Robust Reliabilities

arXiv

引用

arXiv 2024年

作者： Feng, Yang Sun, Zhaohui Wang, Chengcheng Guo, Xinyi Mei, Junyao Qi, Yueran Liu, Jing Zhang, Junyu Wu, Jixuan Zhan, Xuepeng Chen, Jiezhi Shandong University Qingdao266237 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China Neumem Co. Ltd Hefei China

Flash memory has been widely adopted as stand-alone memory and embedded memory due to its robust reliability. However, the limited endurance obstacles its further applications in storage class memory (SCM) and to proceed endurance-required computing-in-memory (CIM) tasks. In this work, the optimization strategies have been studied to tackle this concern. It is shown that by adopting the channel hot electrons injection (CHEI) and hot hole injection (HHI) to implement program/erase (PE) cycling together with a balanced memory window (MW) at the high- Vth (HV) mode, impressively, the endurance can be greatly extended to 1010 PE cycles, which is a record-high value in flash memory. Moreover, by using the proposed electric-field-assisted relaxation (EAR) scheme, the degradation of flash cells can be well suppressed with better subthreshold swings (SS) and lower leakage currents (sub-10pA after 1010 PE cycles). Our results shed light on the optimization strategy of flash memory to serve as SCM and implement endurance-required CIM tasks. Copyright © 2024, The Authors. All rights reserved.

关键词： Flash memory

来源：评论

学校读者我要写书评

暂无评论

Modulation of Microstructure and Charge Transport in Polymer Monolayer Transistors by Solution Aging

引用

Chinese Journal of Chemistry 2021年第11期39卷 3079-3084页

作者： Xuemei Lin Ruochen Liu Chenming Ding Junyang Deng Yifu Guo Shibing Long Ling Li Mengmeng Li Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing100029 China School of Microelectronics University of Science and Technology of ChinaHefeiAnhui230026 China School of Electronic Electrical and Communication EngineeringUniversity of Chinese Academy of SciencesBeijing100049 China E-mail:

A few monolayers of organic semiconductors adjacent to the dielectric layer are of vital importance in organic field-effect transistors due to their dominant role in charge *** this report,the 2-nm-thick polymer monolayers based on poly(3-hexylthiophene)with different molecular weights(M_(n))were fabricated using dip-coating *** the monolayer(solid state)formation from the solution,a disorder-to-order transition of polymer conformation is observed through UV-vis absorption ***,high Mn polymer monolayer generates higher crystalline fibrillar microstructure than the low Mn one due to the strongerπ–πintermolecular packing between *** importantly,the solution aging procedure is utilized to further improve the morphology of polymer *** is obvious that after aging for 6 d,both fiber dimension and density as well as conjugation length are significantly increased under the same processing conditions in comparison to the fresh solution,and consequently the field-effect mobilities are remarkably enhanced by 2—4 *** that the maximum mobility of 0.027 cm2·V^(–1)·s^(–1)is among the highest reported values for poly(3-hexylthiophene)monolayer *** results demonstrate a simple but powerful strategy for boosting the device performance of polymer monolayer transistors.

关键词： Aggregation Conjugation Monolayers Solution aging Charge transport

来源：评论

学校读者我要写书评

暂无评论

Investigation of Nb Ox-based volatile switching device with self-rectifying characteristics

引用

Science China(Information Sciences) 2019年第12期62卷 277-280页

作者： Yichen FANG Zongwei WANG Caidie CHENG Zhizhen YU Teng ZHANG Yuchao YANG Yimao CAI Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University

Dear editor,Resistive random access memory (RRAM), one of the most promising emerging non-volatile memory technologies, has been extensively investigated by researchers from both academia and industry due to its fast ... 详细信息

关键词： Investigation of Nb Ox-based volatile switching device with self-rectifying characteristics

来源：评论

学校读者我要写书评

暂无评论

Phase quasi-random squares spiral zone plates with single-focus diffraction

引用

Journal of the Optical Society of America A 2025年第6期42卷 834-841页

作者： Huakui Hu Weifeng Wu Huajie Xu Guoping Shi Jiangtao Ding Hailiang Li Research Center of Integrated Circuits Design and Semiconductor Processing Material Chizhou College Chizhou 247000 China Anhui Research Center of Semiconductor Industry Generic Technology Chizhou 247000 China College of Mechanical and Electrical Engineering Chizhou College Chizhou 247000 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

Due to the existence of orbital angular momentum, an optical vortex generated from spiral zone plates is an important approach for studying physics and detecting matter. However, the unneeded high-order diffraction inherent in traditional spiral zone plates will add background noise, leading to complication in subsequent analysis. In this paper, a single-focus spiral zone plate with an approximately sinusoidal transmittance, called phase quasi-random squares spiral zone plates (PQRSZPs), is designed. The key idea of the PQRSZPs is to transform the three-dimensional sinusoidal structure of the sinusoidal spiral zone plates into a three-dimensional square structure with a phase difference of ${2}\pi$ , making it easy to fabricate. Theoretical analysis and experimental results confirm that the PQRSZPs can effectively remove high-order diffraction and increase the diffraction intensity of the wanted order. Moreover, the helical phase structure with multiple topological charges of the output beams is also demonstrated. Due to this unique property, there are widespread applications in astrophysics and imaging.

关键词： Diffractive optical elements Optical elements Optical vortex beams Phase plates Spatial light modulators Zone plates

来源：评论

学校读者我要写书评

暂无评论

Experimental Investigation of Ultra-Low Temperature LA2O3/HFO2 Bi-Layer Dipole-First Process Using PVD Method for Advanced IC Technology

Experimental Investigation of Ultra-Low Temperature LA2O3/HF...

引用

China Semiconductor Technology International Conference (CSTIC)

作者： Yanzhao Wei Jiaxin Yao Renren Xu Qingzhu Zhang Huaxiang Yin Integrated Circuit Advanced Process R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing China School of Integrated Circuits University of Chinese Academy of Sciences Beijing China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

In this paper, a La 2 O 3 /HfO 2 bi-layer dipole-first (DF) process is proposed and investigated by ultra-low temperature PVD dielectric laminates to achieve lower gate effective work function (EWF) for monolithic 3D-IC (M3D) application. The impacts of ultra-low temperature La-dipole on EWF modulation and interfacial properties are comprehensively investigated. It is found that the flat-band voltage (V FB ) negatively shifts 60 mV with sub-1nm La 2 O 3 thickness, which provides an effective way to meet the require of Si conduction band-edge EWF modulation. Furthermore, the electron trap/detrap densities (Not) and interfacial trap densities (Dit) are suppressed by La 2 O 3 /HfO 2 bi-layer DF process to improve device performance. These results exhibit a promising bi-layer DF process in low thermal integration for advanced IC technology.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Uniform, fast, and reliable CMOS compatible resistive switching memory

引用

Journal of Semiconductors 2022年第5期43卷 109-115页

作者： Yunxia Hao Ying Zhang Zuheng Wu Xumeng Zhang Tuo Shi Yongzhou Wang Jiaxue Zhu Rui Wang Yan Wang Qi Liu Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China School of Integrated Circuits Anhui UniversityHefei 230601China Frontier Institute of Chip and System Fudan UniversityShanghai 200433China

Resistive switching random access memory(RRAM) is considered as one of the potential candidates for next-generation memory. However, obtaining an RRAM device with comprehensively excellent performance, such as high retention and endurance, low variations, as well as CMOS compatibility, etc., is still an open question. In this work, we introduce an insert TaO_(x) layer into HfO_(x)-based RRAM to optimize the device performance. Attributing to robust filament formed in the TaO_(x) layer by a forming operation, the local-field and thermal enhanced effect and interface modulation has been implemented simultaneously. Consequently, the RRAM device features large windows(> 10^(3)), fast switching speed(-10 ns), steady retention(> 72h), high endurance(> 10^(8) cycles), and excellent uniformity of both cycle-to-cycle and device-to-device. These results indicate that inserting the TaO_(x) layer can significantly improve HfO_(x)-based device performance, providing a constructive approach for the practical application of RRAM.

关键词： uniformity resistance switching field enhance layer thermal enhance layer and interface modulation

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：