检索结果-内蒙古大学图书馆

Subpixel-based Bidirectional Distortion Correction for Two-dimensional Astronomical Fiber Spectral Images

Research in Astronomy and Astrophysics 2025年第3期25卷 48-59页

作者： Dong-Sheng Hu Chuan-Qi Chen Hao-Jie Yang An-Zhi Wang Gang Yue Zhao-Xv Gan Xu-Dong Chen Yun-Xiang Yan Yue Zhong Zhi Xu Zhong-Quan Qu Peng-Fei Wang Tao Geng Shuang Chen Wei-Min Sun Key Laboratory of Photonic Materials and Devices Physics for Oceanic Applications Ministry of Industry and Information Technology of China College of Physics and Optoelectronic Engineering Harbin Engineering University Key Laboratory of In-Fiber Integrated Optics of Ministry of Education College of Physics and Optoelectronic Engineering Harbin Engineering University Qingdao Innovation and Development Center of Harbin Engineering University Yunnan Observatory of Chinese Academy of Sciences State Key Laboratory of Aerodynamics China Aerodynamics Research and Development Center

This paper proposes a subpixel transformation method to correct keystone and Smile distortions in fiber spectral images from the Fiber Arrayed Solar Optical Telescope. These distortions affect the spatial and spectral positions,degrading resolution and accuracy. To correct keystone distortion, we use a local summation and peak-finding method to locate central horizontal coordinates, calculate shifting values, and straighten the curves. For Smile distortion, we use quartic polynomial fitting based on absorption lines at different wavelengths. This technique preserves subpixel components, redistributes pixel values, and interpolates non-fiber portions, rectifying the spectra for accurate analysis. The method can also be applied to other astronomical projects like Large Sky Area MultiObject Fiber Spectroscopic Telescope, enhancing the accuracy and reliability of spectral data in various astronomical studies.

关键词： methods: miscellaneous techniques: image processing techniques: miscellaneous techniques: spectroscopic

来源：评论

学校读者我要写书评

暂无评论

Polarization-encoded neural networks with simplified grating patch

引用

Science China(Technological Sciences) 2025年第2期68卷 269-277页

作者： Chengyan ZHONG Xiang WANG Lingfei LI Yuanchi CUI Lei XIAO Dawei SONG Junxiong GUO Wen HUANG Yufeng GUO Yu LIU College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing 210023China College of Integrated Circuits Hangzhou Global Scientific and Technological Innovation Centre Zhejiang UniversityHangzhou 310027China Nanjing Mumusili Technology Co. LTDNanjing 211100China School of Integrated Circuits Tsinghua UniversityBeijing 100084China Institute of Advanced Study School of Electronic Information and Electrical EngineeringChengdu UniversityChengdu 610106China State Key Laboratory of Electronic Thin Films and Integrated Devices School of Integrated Circuit Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 610054China

Optical neural networks(ONNs)offer a promising solution for high-performance,energy-efficient artificial intelligence hardware by leveraging the parallelism and speed of ***,the large-scale implementation of ONNs remains challenging due to the bulky footprint and complex control of optical *** this work,we propose and simulate a plasmonic polarized synaptic architecture that overcomes the diffraction limit and enables ultra-compact *** tuning the polarization state of incident light,the optical transmittance through each plasmonic unit can be dynamically adjusted to represent a synaptic *** plasmonic structures,with features as small as 40 nm,operate well below this limit in the visible spectrum(400-750 nm).Compared with diffraction and interference-based circuit designs,our proposed method achieves a substantial reduction in synaptic density by factors of 150000-fold and 1500-fold,***,we successfully demonstrate a proof-of-concept plasmonic ONN applied to the Canadian Institute for Advanced Research—10 classes(CIFAR-10)dataset using a Visual Geometry Group network with 16 layers(VGG16)*** training for 80 epochs,the network achieves an accuracy of 93%.The polarization-tunable plasmonics paves the way towards scalable ONNs for next-generation artificial intelligence(AI)accelerators and smart sensors.

关键词： optical neural networks polarization dependent nanophotonic ultra-compact devices diffraction limit

来源：评论

学校读者我要写书评

暂无评论

Enhanced energy storage properties of lead-free BNT-based ceramics by introducing Na0.7La0.1NbO3 13

Enhanced energy storage properties of lead-free BNT-based ce...

引用

13th Global Conference on Materials Science and Engineering, CMSE 2024

作者： Wang, H. Li, E.Z. State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China Key Laboratory of Multi-Spectral Absorbing Materials and Structures of Ministry of Education University of Electronic Science and Technology of China Chengdu610054 China

High energy density ceramic materials play an important role in pulse systems. In this study, (1-x)(0.70Bi0.5Na0.5TiO3-0.30BiFeO3)-xNa0.7La0.1NbO3 (x = 0, 0.08, 0.16, and 0.24) (BNT-BFO-xNLN) ceramics were prepared using the traditional solid-state method. The crystal structure, microstructure, ferroelectricity, dielectric properties, energy storage density, and pulse charge-discharge performance of BNT-BFO-xNLN ceramics were systematically investigated. All BNT-BFO-xNLN ceramics exhibited a pure perovskite structure, indicating the successful incorporation of NLN into the BNT-BFO lattice. With the introduction of NLN, the P-E hysteresis loops of BNT-BFO ceramics gradually transformed from a saturated state to a slender state due to the relaxation dielectric peak shifting to room temperature. BNT-BFO-0.16NLN ceramics revealed superior energy storage properties (Wrec = 4.17 J/cm3, η = 79.2%) under an electric field of 300 kV/cm. Additionally, BNT-BFO-0.16NLN ceramic exhibited a current density (CD) of 164.0 A/cm2 and a power density (PD) of 13.1 MW/cm3, making it a potential material for pulse system energy storage. © Published under licence by IOP Publishing Ltd.

关键词： Perovskite

来源：评论

学校读者我要写书评

暂无评论

Graphene/F_(16)CuPc synaptic transistor for the emulation of multiplexed neurotransmission

引用

Journal of Semiconductors 2025年第1期46卷 215-223页

作者： Zhipeng Xu Yao Ni Mingxin Sun Yiming Yuan Ning Wu Wentao Xu Institute of Photoelectronic Thin Film Devices and Technology Key Laboratory of Photoelectronic Thin Film Devices and Technology of TianjinCollege of Electronic Information and Optical EngineeringEngineering Research Center of Thin Film Photoelectronic Technology of Ministry of EducationNankai UniversityTianjin 300350China Shenzhen Research Institute of Nankai University Shenzhen 518000China Smart Sensing Interdisciplinary Science Center Nankai UniversityTianjin 300350China School of Integrated Circuits Guangdong University of TechnologyGuangzhou 510006China

We demonstrate a bipolar graphene/F_(16)CuPc synaptic transistor(GFST)with matched p-type and n-type bipolar properties,which emulates multiplexed neurotransmission of the release of two excitatory neurotransmitters in graphene and F_(16)CuPc channels,*** process facilitates fast-switching plasticity by altering charge carriers in the separated *** complementary neural network for image recognition of Fashion-MNIST dataset was constructed using the matched relative amplitude and plasticity properties of the GFST dominated by holes or electrons to improve the weight regulation and recognition accuracy,achieving a pattern recognition accuracy of 83.23%.These results provide new insights to the construction of future neuromorphic systems.

关键词： synaptic transistor dual excitatory channels fast-switching plasticity multiplexed neurotransmission

来源：评论

学校读者我要写书评

暂无评论

Nonlinear saturable absorption and defect-assisted Auger recombination of environmentally stable OHB-T

引用

Optics Express 2025年第9期33卷 19689-19699页

作者： Zhang, Mingang Ye, Xiaofang Jiang, Yadong Dong, Ningning Wang, Jun Zhang, Lin Wang, Wenfeng Chen, Hualong Zhang, Han Zhang, Bo Air Defense and Antimissile School Air Force Engineering University Xi’an710056 China State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu610054 China Laboratory of Micro-Nano Optoelectronic Materials and Devices Key Laboratory of Materials for High-Power Laser Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences Shanghai201800 China School of Physics and Optoelectronic Engineering Shenzhen University Shenzhen518060 China

The search for environmentally stable nonlinear optical materials with ultra-high third-order nonlinear absorption response is attractive for the development of novel optoelectronic devices. To this end, the nonlinear absorptions and related carrier dynamics of ionic organic 2-(4-hydroxystyryl)-3-methylbenzothiazolium 4-methylbenzenesulfonate (OHB-T) are investigated in this work. Results indicate that stable OHB-T with a high initial weight-loss temperature of 314.3 oC and melting temperature of 265.3 oC exhibits outstanding third-order nonlinear saturable absorption properties in both liquid and solid phases at 520 nm with the figures of merit of 2.94−4.50 × 10−13 esu cm and saturation intensities of 2.80−3.60 GW cm−2. Transient absorption measurements reveal that the saturable absorption behavior originates from a rapid ground-state bleaching process caused by the Pauli blocking principle. Particularly, the subsequent relaxation processes of single-photon excited carriers are dominated by the defect-assisted Auger recombination involving a fast relaxation of 5.68−11.95 ps and a slow relaxation of 43.30−64.30 ps. These findings are not only are helpful for understanding the third-order nonlinearities and carrier dynamics of organic benzothiazolium salts, but also disclose a promising candidate material for the design of next-generation high-performance optoelectronic devices in the future. © 2025 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement.

关键词： Nonlinear optics

来源：评论

学校读者我要写书评

暂无评论

1.27 GW/cm² Reverse Blocking E-Mode GaN-Si(100) Monolithic Heterogeneous Integration Cascode Switch With Ultralow Turn-On Voltage and Dynamic RON

IEEE Electron Device Letters

引用

IEEE Electron Device Letters 2025年第5期46卷 805-808页

作者： Fan, Yutong Zhang, Weihang Zhang, Yachao Wu, Yinhe Feng, Xin Liu, Zhihong Jiang, Yang In Mak, Pui Hao, Yue Zhang, Jincheng Xidian University National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xi'an710071 China Guangzhou Institute of Technology Xidian University Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou510555 China Institute of Microelectronics University of Macau State Key Laboratory of Analog and Mixed-Signal Vlsi China

In this letter, an E-Mode GaN-Si(100) monolithic heterogeneous integration cascode switch (RBMHIC-switch) with reverse blocking compatibility on a SiC substrate with an AlN buffer layer is demonstrated. The RBMHIC-switch with LGD of 22~μ m showed a threshold voltage (VTH) of 2.64 V, a large forward gate voltage swing of 16.27 V, a turn-on voltage (VON) of 0.3 V, and an extremely low reverse leakage current (IR) of 3.5× 10-4 mA/mm at -2000 V. The forward breakdown voltage (VFBR) of 2264 V and reverse breakdown voltage (VRBR) of 2183 V with a specific on-resistance (RON, SP ) of 3.74 mΩ ċ cm2 were achieved, resulting in a forward power figure of merit (PFOM = V BR2 /RON,SP) of 1.35 GW/cm2 and reverse PFOM of 1.27 GW/cm2. The ratio between dynamic-RON and static-RON was 1.104 and 1.127 after a 10 ms 1900 V drain stress voltage (V DS- OFF ) and a 10 ms -1900 V V DS- OFF (delay time = 1~μ s) for the RBMHIC-switches, respectively, which were the best among all existing GaN power devices with reverse blocking capability. The thermal resistance at different temperatures was also extracted. The RBMHIC-switche shows decent overall characteristics as compared to the reported results. © 1980-2012 IEEE.

关键词： Gallium nitride

来源：评论

学校读者我要写书评

暂无评论

Theoretical understanding of defects-driven mechanoluminescence for Pr^(3+)-doped NaNbO_(3)/LiNbO_(3)heterojunctions

引用

Journal of Rare Earths 2025年第4期43卷 691-700,I0002页

作者： Wenhao Li Minyu Jin Jianhui Li Ci Wang Haizheng Shi Jinlong Nan Qingmiao Hu Baifeng Liu Lu Liu Jing Ren Jianzhong Zhang Key Laboratory of Photonic Materials and Devices Physics for Oceanic Applications Ministry of Industry and Information Technology of ChinaCollege of Physics and Optoelectronic EngineeringHarbin Engineering UniversityHarbin150001China Key Laboratory of In-Fiber Integrated Optics of Ministry of Education College of Physics and Optoelectronic EngineeringHarbin Engineering UniversityHarbin150001China Institute of Metal Research Chinese Academy of SciencesShenyang110016China Shanghai APACTRON Particle Equipment Co. LtdShanghai200000China

Mechano luminescence(ML),which involves the emission of light under mechanical stimuli,shows great potential in various applications such as sensing,imaging,and energy *** research suggests that the luminescence mechanism of ML is typically connected to specific defects present within the *** this study,we focus on the investigation of ML defects in Pr^(3+)-doped NaNbO_(3)/LiNbO_(3)heterojunctions,employing a combination of experimental and theoretical *** experimental analysis,we confirmed the presence of the heterojunction and its influence on ML intensity,and the optimal doping ratio for the heterojunction in ML was ***,we examined the influence of varying Pr^(3+)doping concentrations on ML behavior and a proof-of-concept was demonstrated using the X-rays charged heterostructural phosphor as a stress sensor for biological *** position and concentration of internal defects in the ML material were scrutinized through thermo luminescence tests employing the variable heating rate method and positron *** the experimental findings,theoretical simulations were conducted to elucidate the underlying mechanisms responsible for the observed ML *** functional theory calculations were employed to investigate the energy levels,charge transfer processes,and lattice distortions within the heterojunctions under mechanical *** predictions were compared and validated against the experimental *** integration of experimental and theoretical approaches provides a comprehensive understanding of the ML behavior of Pr^(3+)-doped NaNbO_(3)/LiNbO_(3)*** insights gained from this research contribute to the development of novel ML materials and pave the way for their applications in next-generation sensing and energy conversion devices.

关键词： Mechanoluminescence Defects First-principle calculations Positron annihilation lifetime test Heterostructures Rare earths

来源：评论

学校读者我要写书评

暂无评论

AQ-band spatial power combining module based on antipodal finline transitions 2

AQ-band spatial power combining module based on antipodal fi...

引用

2nd International Workshop on Engineering Physics, IWEP 2024

作者： Chen, Xilong Wang, Wei Zhang, Li Yang, Songyuan Lin, Qinglei College of Physics and Electronic Information Yunnan Normal University Kunming650500 China Yunnan Key Laboratory of Opto-electronic Technology Kunming650500 China State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi'an710071 China

In this paper, a Q-band spatial power combining module based on antipodal finline transition is designed, which combines the excellent characteristics of antipodal finline and the advantages of spatial power combining technology (SPCT) in millimeter-wave band. Numeric simulation shows a return loss better than 14.9dB and an average insertion loss of 1.19dB between 39.5 - 47.5GHz, and the theoretical average power combined efficiency can reach up to 87.3%. The measurement results reveal an average power combined efficiency of 72.8% and the maximum power combined efficiency of 80.4%. © 2025 Institute of Physics Publishing. All rights reserved.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Atomically Thin Nems Frequency Comb with Both Frequency Tunability and Reconfigurability Via Mechanical Mixing of Two Excitations 38

Atomically Thin Nems Frequency Comb with Both Frequency Tuna...

引用

38th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2025

作者： Xu, Bo Wang, Zenghui Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu610054 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China

ISBN: (纸本)9798331508890

We report and tune a frequency comb in a Graphene nanoelectromechanical system (NEMS) resonator via mechanical mixing of two excitations. By applying a single-tone excitation and carefully setting the gate voltage Vg, 1:2 internal resonances can be realized and equidistant spectral lines around the fundamental mode frequency are observed. Its frequency response can be adjusted by introducing an additional excitation simultaneously. The frequency spacing and the number of spectral lines can be tuned by the driving amplitude and frequency of the mixing source. The combination of such resonant responses can be harnessed to realize highly tunable NEMS frequency combs and provide new possibilities towards high performance sensing application and frequency control. © 2025 IEEE.

关键词： NEMS

来源：评论

学校读者我要写书评

暂无评论

Transparent near-infrared organic upconversion device for high-quality biological imaging 10

Transparent near-infrared organic upconversion device for hi...

引用

10th Symposium on Novel Optoelectronic Detection technology and Applications

作者： Han, Xingwei He, Meiyu Wang, Jun School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu610054 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China

ISBN: (数字)9781510688155

ISBN: (纸本)9781510688148

Organic upconversion devices (OUDs), which have the advantages of low cost, simple structure, and large-area manufacturing, have emerged as a dependable infrared imaging strategy in the context of the growing interest in infrared visualization technology in recent years. However, currently available organic upconversion devices rarely make use of transparent electrode designs and imaging applications. In this work, since the transparent organic light-emitting diode (OLED) can emit visible light directly from the top electrode, we propose a transparent OUD integrating an organic photodetector and a transparent OLED to increase the transmission of visible light. The device achieves a notable upconversion efficiency of 10.9 % along with a wide linear dynamic range (LDR) of 77 dB and a low turn-on voltage (Von) of 1.55 V. The device tackles the problem of inferior imaging quality that is linked to traditional oblique incidence techniques, thereby achieving high-quality imaging of biological specimens and visualization of intricate details that are imperceptible to the naked eye. This work provides modified imaging techniques and a fabrication method for next-generation transmissive up-conversion devices. © 2025 SPIE.

关键词： Organic light emitting diodes (OLED)

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：