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2023 China Semiconductor technology International Conference, CSTIC 2023

作者： Wei, Yanzhao Yao, Jiaxin Xu, Renren Zhang, Qingzhu Yin, Huaxiang Chinese Academy of Sciences Integrated Circuit Advanced Process R&d Center Institute of Microelectronics Beijing100029 China Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integrated Technology Beijing100029 China University of Chinese Academy of Sciences School of Integrated Circuits Beijing100049 China

ISBN: (纸本)9798350311006

In this paper, a La2O3/HfO2 bi-layer dipole-first (DF) process is proposed and investigated by ultra-low temperature PVD dielectric laminates to achieve lower gate effective work function (EWF) for monolithic 3D-IC (M3D) application. The impacts of ultra-low temperature La-dipole on EWF modulation and interfacial properties are comprehensively investigated. It is found that the flat-band voltage (VFB) negatively shifts 60 mV with sub-1nm La2O3 thickness, which provides an effective way to meet the require of Si conduction band-edge EWF modulation. Furthermore, the electron trap/detrap densities (Not) and interfacial trap densities (Dit) are suppressed by La2O3/HfO2 bi-layer DF process to improve device performance. These results exhibit a promising bi-layer DF process in low thermal integration for advanced IC technology. © 2023 IEEE.

关键词： Timing circuits

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Entanglement Improvement of Three-mode Squeezed Vacuum State Via Number-conserving Operation

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International Journal of Theoretical Physics 2025年第6期64卷 1-20页

作者： Dai, Shiyu Kang, Qingqian Hu, Liyun Liu, Cunjin Zhao, Teng Center for Quantum Science and Technology Jiangxi Normal University Nanchang China Jiangxi Civil-Military Integration Research Institute Nanchang China Department of Physics College of Science and Technology Jiangxi Normal University Nanchang China Jiangxi Provincial Key Laboratory of Advanced Electronic Materials and Devices Nanchang China

In this paper, the quantum entanglement properties of a three-mode squeezed vacuum state under an ideal and realistic scenario are discussed. We find that photon loss has a significant negative effect on quantum entanglement, leading to the degradation of entangled states and the loss of fidelity. In order to overcome this challenge, we further study the effect of number-conserving operation on the entangled properties of three-mode squeezed vacuum states. In general, when the squeezing amplitude is small, the multi-mode and high-order number-conserving operation has the optimal effect on the improvement of entanglement. With the increase of squeezing amplitude, we need to reduce the number of operated modes and the order of number-conserving operation to obtain the optimal improvement effect. When the squeezing amplitude is large enough, the number-conserving operation no longer has the improvement effect. The results in this paper are helpful to further understand the multi-mode squeezed vacuum state and provide an estimable theoretical basis for its application in quantum information processing.

关键词： Entanglement Non-Gaussian operation Number-conserving operation Three-mode squeezed vacuum state

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Experimental Demonstration of A CT-FeFET Array with Intrinsic Long-Short-Term Plasticity for Low-Cost Trajectory Prediction

Experimental Demonstration of A CT-FeFET Array with Intrinsi...

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International Electron devices Meeting (IEDM)

作者： Chao Li Jie Yu Xumeng Zhang Zhaohao Zhang Fangduo Zhu Siyuan Ouyang Pei Chen Lingli Cheng Gaobo Xu Qingzhu Zhang Huaxiang Yin Qi Liu Ming Liu State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China Key Laboratory of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Beijing China

ISBN: (数字)9798350365429

ISBN: (纸本)9798350365436

Trajectory prediction is a vital function in the auto-driving field, typically achieved with a long short-term memory network. Static IMC technology accelerates the computing of long-term parameters, while the execution of short-term parameters faces great buffer overhead. Inspired by the fused long-short-term synaptic plasticity in biology, here, we proposed a dynamic IMC strategy based on a charge-trapping FeFET array with intrinsic long-short-term plasticity. The long-term weights are stored in the ferroelectric domain, while the short-term weights are in-situ dynamically operated in a charge-trapping domain, eliminating the external caching process. We further demonstrated a dynamic IMC neuromorphic system built on this array for performing trajectory prediction of moving vehicles, achieving more than 1000x and 4x improvements than GPU in power consumption and memory overhead.

关键词： Performance evaluation Power demand Neuromorphics Memory management Graphics processing units Trajectory Vehicle dynamics Synapses Long short term memory FeFETs

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Tunable magnetic anisotropy, Curie temperature and band alignment of two-dimensional ferromagnet VSiSnN4 via non-volatile ferroelectrical control

arXiv

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arXiv 2024年

作者： Li, Kang-Jie Wang, Ze-Quan Chen, Zu-Xin Hou, Yusheng Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices Center for Neutron Science and Technology School of Physics Sun Yat-Sen University Guangzhou510275 China Guangdong Provincial Key Laboratory of Chip and Integration Technology School of Semiconductor Science and Technology South China Normal University Guangzhou528225 China

The emergence of multiferroic materials, which possess both ferromagnetic (FM) and ferroelectric (FE) properties, drive advancements in magnetoelectric applications and the next generation of spintronics. Based on first-principles calculations, we investigate an engineered two-dimensional multiferroic van der Waals heterostructures consisting of FM VSiSnN4 monolayer (ML) and fully hydrogenated FE AlN bilayer. We find that the magnetic anisotropy of VSiSnN4 ML is tunable between out-of-plane and in-plane and a phase transition between semiconductor and metal is induced in VSiSnN4/AlN bilayer when the FE polarization direction of AlN bilayer is reversed. Surprisingly, when the FE polarization of AlN bilayer is upward, the Curie temperature of VSiSnN4/AlN bilayer can be significantly increased from 204K to 284K. Such nonvolatile and tunable magnetic anisotropy, Curie temperature and band alignment in VSiSnN4/AlN multiferroic heterostructure are highly promising for future low-current operation of data storage and logic devices. © 2024, CC BY.

关键词： Aluminum nitride

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Investigation of Vertically Stacked Horizontal Gate-All-Around SI Nanosheet Ion Sensitive Field Effect Transistor For Detection of C-Reactive Protein

Investigation of Vertically Stacked Horizontal Gate-All-Arou...

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China Semiconductor technology International Conference (CSTIC)

作者： Yang Liu Qingzhu Zhang Junjie Li Cinan Wu Lei Cao Yanna Luo Zhaohao Zhang Shuhua Wei Qianhui Wei Jiaxin Yao Jiawei Hu Meiyan Qin Enxu Liu Yanchu Han LianLian Li YingLu Li Tao Yang Na Zhou Jianfeng Gao Junfeng Li Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China College of Big Data and Information Engineering Guizhou University Guiyang China School of Information Science and Technology North China University of Technology Beijing China State Key Laboratory of Advanced Materials for Smart Sensing GRINM Group Co. Ltd. Beijing China

In this work, based on advanced gate-all-around (GAA) technology, the extended sensing gate (ESG) GAA Si nanosheet (SiNS) ion sensitive field effect transistor (ISFET) sensor was fabricated and reported for the first time. Due to the GAA structures and the vertically-stacked SiNS channels, the average sensitivity of the ESG GAA SiNS ISFET sensor can be reached 58.8 mV/pH, which provides good gate control and ultra-sensitive detection capabilities. In addition, the actual minimum detection concentration of C-reactive protein (CRP) by ESG GAA SiNS ISFET sensor in 1$\times$ PBS environment is as low as 100pg/mL, which is much lower than the normal concentration of human body.

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A Low Power Active-Passive Noise Shaping SAR ADC

A Low Power Active-Passive Noise Shaping SAR ADC

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Electronic technology, Communication and Information (ICETCI), IEEE International Conference on

作者： Ziqi Huang Weilin Xu Baolin Wei Xueming Wei Haiou Li Guangxi Key Laboratory of Precision Navigation Technology and Applications Guilin University of Electronic Science and Technology Guilin China Education Department of Guangxi Zhuang Autonomous Region Key Laboratory of Microelectronic Devices and Integrated Circuits Guilin University of Electronic Technology Guilin China

The traditional passive noise-shaping SAR ADC has low power consumption but weak shaping capability; while the active noise-shaping SAR ADC has strong shaping capability but high-power consumption. The typical active-passive SAR ADC still consumes considerable power due to the use of OTA amplifier in the active part. In this paper, an active-passive noise-shaping SAR ADC is designed by using floating inversion amplifier (FIA) to replace the traditional OTA amplifier in the active part, which achieves a strong noise shaping capability and low power consumption at the same time. The second-order active-passive noise-shaping SAR ADC circuit designed by a 180nm CMOS process achieves 14.6-bit ENOB with 400KS/s sampling rate and consumes only 28.9µW.

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A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

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Science China(Information Sciences) 2020年第6期63卷 253-255页

作者： Gong CHEN Bocheng YU Xiaokang LI Xiaoqiao DONG Xiaoyan XU Zhihong LI Ru HUANG Ming LI Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Peking University Faculty of Information Technology Beijing University of Technology

Dear editor,Recently, the integration of photosensitive material and electronic nanodevice has been the center of attention with Internet of things (IoT)technology development [1–3]. The immobilization of such photoactive molecules on the semiconductor surface was necessarily adopted to employ their photoelectric characteristics which can be observed in the solution. Porphyrin-based hybrid transistors have emerged as promising candidates for photonic sensing application due to the

关键词： A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

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Fundamental Correction of Self-Absorption Effect on the Element Concentration Measurement in Laser Induced Plasmas

SSRN

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SSRN 2022年

作者： He, Gui-Cang Zhang, Kang-Wei Shi, Li-Na Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

For testing the fundamental correction of self-absorption (SA) effect on the element concentration measurement in laser induced plasmas (LIPs), the spectra of soil LIPs are measured using a typical experiment set up. The SA coefficient (SAλ) of a spectral line is directly obtained from the fitting of the Voigt function with the experiment data of that, which are used to correct the intensity of the spectral line, electron temperature, electron density, and the element concentration of the LIPs. The nine elements (Al, Ca, Fe, K, Mg, Na, Li, Cu, Ti) concentrations in the soil are analyzed, which are closer to the results measured by chemical methods than that obtained without considering SA correction. Especially, SAλ of some lines (Mg I at 518.36 nm, Na I at 497.85 nm, Cu I at 324.75 nm) are equal to 1, which do not affect concentrations of corresponding elements, but the concentrations accuracy of them are still improved. This indicate the elements concentrations not only are corrected by the intensity of the spectral lines, but also are corrected by plasmas properties. So, the SA effect on element concentration can be fundamental corrected in this method. © 2022, The Authors. All rights reserved.

关键词： Laser produced plasmas

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A Low Power OTA-C Filter for Wireless Body Area Networks

A Low Power OTA-C Filter for Wireless Body Area Networks

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International Conference on Integrated Circuits and Microsystems (ICICM)

作者： Jueyong Zhu Weilin Xu Xueming Wei Baolin Wei Haiou Li Education Department of Guangxi Zhuang Autonomous Region Key Laboratory of Microelectronic Devices and Integrated Circuits Guilin University of Electronic Technology Guilin China Guangxi Key Laboratory of Precision Navigation Technology and Applications Guilin University of Electronic Science and Technology Guilin China

The traditional OTA structure uses the current splitting technology to decompose most of the current, which can effectively reduce the transconductance, but the excessive current splitting ratio will bring power loss. To solve this problem, a multiple-output fully differential (MOFD) cascode OTA structure is proposed. This structure can generate additional output by connecting the load to the current splitting branch, which can effectively utilize the current generated by the current splitting to reduce the power loss. In order to reduce the passband attenuation of the filter, the output stage adopts the cascode structure to increase the output impedance of the OTA, and the improved source negative feedback structure obtains lower transconductance and better linear range. Compared with the traditional structure, the number of OTAs of the fifth-order Butterworth low-pass filter with this OTA structure is reduced from 11 to 6, thereby reducing power consumption and achieving lower passband attenuation. The circuit is verified by 0.18 um CMOS process. The results show that the passband gain of the proposed filter is only −6.1 dB. −3dB frequency is 260 Hz. For 100 mV sinusoidal input signal at 50 Hz, the total harmonic distortion (THD) of the filter is about −66 dB and the power consumption is only 11.4 $\mu \mathbf{W}$ at 1.8 V supply.

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Designing Fragile-to-Strong Crystallization Kinetics in Confined Nanoscale Films for Improved Phase-Change Memory Performances

SSRN

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SSRN 2024年

作者： Chen, Yimin Wang, Guoxiang Chen, Bin Gu, Chenjie Gao, Yixiao Liu, Zijun Zou, Qiushun Xu, Tiefeng Wang, Jun-Qiang Lotnyk, Andriy Shen, Xiang Department of Microelectronic Science and Engineering School of Physical Science and Technology Ningbo University Ningbo315211 China Laboratory of Infrared Material and Devices Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province Advanced Technology Research Institute Ningbo University Ningbo315211 China Co. Ltd. Wuhan430205 China CAS Key Laboratory of Magnetic Materials and Devices Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Ningbo Institute of Materials Technology & Engineering Chinese Academy of Sciences Ningbo315201 China Permoserstrasse 15 LeipzigD-04318 Germany

Designing the crystallization process in confined nanoscale phase-change materials (PCMs) is crucial for developing universal memory and neuro-inspired computation. This requires a comprehensive understanding of phase-change behavior, especially in complex situations involving interfacial effects, nanoscale effects, and non-isothermal conditions. We designed 2D confined nanoscale GeTe films and investigated thickness dependent crystallization kinetics using non-isothermal Flash DSC method. Compared to conventional Ge2Sb2Te5, we found the nanoscale GeTe films exhibit both the faster crystallization and better amorphous thermal stability, which is attributed to the distinct fragile-to-strong crossover (FSC) behavior. Noteworthily, the FSC magnitude is always ~2 for 2D confined films, but the FSC temperature increases significantly as the film thickness decreases to nanometers. The thickness dependent crystal growth rate of confined PCMs can be depicted by an exponential expression, yielding the thickness of ~10 nm is optimal for phase-change memory. We confirmed the 10 nm GeTe based device has fast SET speed of 6 ns after applying 2.5 V voltage pulse. We also revealed the explored FSC behavior stems from the competition between heterogenous nucleation at interface and crystal growth in the inner film. These findings would be a useful guideline for future phase-change neuro-inspired computing and provide supports to data-intensive applications. © 2024, The Authors. All rights reserved.

关键词： Phase change memory

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