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SSRN 2023年

作者： Xie, Shuangquan Gu, Jierong Jia, Guang Liu, Zijun Gu, Chenjie Gao, Yixiao Zheng, Wenfeng Liu, Ziqiang Shen, Xiang Chen, Yimin Laboratory of Infrared Material and Devices Advanced Technology Research Institute Ningbo University Ningbo315211 China Ningbo Institute of Oceanography Ningbo315832 China Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province Zhejiang Ningbo315211 China Department of Microelectronic Science and Engineering School of Physical Science and Technology Ningbo University Ningbo315211 China

In order to overcome the narrow glass-forming compositional range with traditional melt-quenching method, we here performed the mechanical milling and Spark Plasma Sintering technology to fabricate a high Ge content chalcogenide glass, the Ge40As40Se20 glass, which locates outside the Ge-As-Se glass-forming domain. By using the optimal ball milling time of 50 h and sintering stress of 37.5 MPa, the large size Ge40As40Se20 bulk glasses were obtained, which possesses both a large Vickers hardness of 369 Hv and a relative high infrared optical transmission of 43% (@5 and 9 μm). Moreover, it was found there are pores in the sintered glasses more or less, and the pore size and number significantly affect the transmission, i.e., the optimal Ge40As40Se20 bulk glasses were demonstrated has the smallest and least pores via scanning electron microscope. The combination of mechanical milling and low-temperature sintering methods has been confirmed can be used to improve the glass formability and then obtain the high Ge content component with a potential high hardness glass to break through the limited mechanical property of chalcogenides. © 2023, The Authors. All rights reserved.

关键词： Milling (machining)

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Realizing Force Sensing with InGaN/GaN Multi-Quantum Well Diode Chip

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Instrumentation 2024年第4期11卷 4-12页

作者： Feifei Qin Jiaqi Wu Shun Lu Xueyao Lu Yang Chen Xumin Gao Yue Cao Lei Zhang Xiaoxuan Wang Peng Wan Gangyi Zhu Yongjin Wang GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province College of Telecommunications and Information EngineeringNanjing University of Posts and TelecommunicationsNanjing 210003China Chongqing Institute of Green and Intelligent Technology Chinese Academy of SciencesChongqing 400714China State Key Laboratory of Digital Medical Engineering School of Biological Science and Medical EngineeringSoutheast UniversityNanjing 210096China College of Physics MIIT Key Laboratory of Aerospace Information Materials and PhysicsKey Laboratory for Intelligent Nano Materials and DevicesNanjing University of Aeronautics and AstronauticsNanjing 211106China

Force sensing provides a crucial physical-electrical channel within sensing *** study showcases the fabrication and characterization of force sensors by integrating a polydimethylsiloxane(PDMS)mechanical module and an optical channel formed by two ideal InGaN/GaN light-emitting diodes(LEDs)with transmit-receive *** an emitter,the InGaN/GaN device(5 mm×4 mm)exhibits electroluminescence at 469 nm with an on-voltage of 2.33 *** a receiver,the response spectrum of InGaN/GaN devices spans from 350 to 480 nm,featuring a peak at 390 nm,rise time of~68.4 ms,and falling edge of~61.0 *** PDMS film can transform the force into deformation data and influence the signals in the optical *** drive current,the gap between the emitter and receiver,and distance between the LED and PDMS mechanical module all significantly influence the receiver *** from the integrated design,our PDMS-assisted force sensing model uses discrete structures to allow signal intensity *** finite element simulation and experimental results indicate that force of the designed PDMS film exhibits a linear relationship with z-axis displacement and photocurrent from 0 to 0.7 *** findings reveal that when the PDMS film height is 1.5 mm and the distance between the emitter and receiver is near,the photocurrent is ***,Ag film with a thickness of 100 nm considerably enhances the photocurrent response and signal stability in the sensing ***,a weight measurement demonstration is employed to demonstrate force *** system resolution is 1.23μA/N,and the measurement range is 0 to 0.7 N.

关键词： InGaN/GaN diodes chip force sensing coexistence of light emission and detection PDMS

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Highly Sensitive Metamaterial Plasmonic Sensor Based on Nanoimprinting

Highly Sensitive Metamaterial Plasmonic Sensor Based on Nano...

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OptoElectronics and Communications Conference, OECC

作者： Enlai Zheng Xuanming Zhang Fei Lou Xin Cheng Lei Lei State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University) Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen China Department of Materials Science and Engineering Southern University of Science and Technology Shenzhen China

In this paper, we propose and experimentally demonstrate a highly sensitive plasmonic nanohole metasurface sensor using nanoimprinting and electron beam evaporation. A refractive index sensitivity of 516 nm/RIU has been successfully achieved. With the help of nanoimprinting, the proposed method exhibits intrinsic advantages in a simple fabrication process, high repeatability and low cost. Furthermore, the proposed method enables large-area fabrication, making the mass-production of the metamaterial sensor highly feasible.

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Comparison of α particle detectors based on single-crystal diamond films grown in two types of gas atmospheres by microwave plasma-assisted chemical vapor deposition

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International Journal of Minerals,Metallurgy and Materials 2020年第5期27卷 703-712页

作者： Yan-zhao Guo Jin-long Liu Jiang-wei Liu Yu-ting Zheng Yun Zhao Xiao-lu Yuan Zi-hao Guo Li-fu Hei Liang-xian Chen Jun-jun Wei Jian-peng Xing Cheng-ming Li Institute for Advanced Materials and Technology University of Science and Technology BeijingBeijing 100083China Optical and Electronic Materials Unit National Institute for Materials Science(NIMSIbaraki 305-0044Japan Key Laboratory of Microelectronic Device and Integration Technology Institute of Microelectronics of the Chinese Academy of SciencesBeijing 100029China

Chemical vapor deposition(CVD)-grown diamond films have been developed as irradiation-resistant materials to replace or upgrade current detectors for use in extreme radiation environments. However, their sensitivity in practical applications has been inhibited by space charge stability issues caused by defects and impurities in pure diamond crystal materials. In this study, two high-quality CVD-grown single-crystal diamond(SCD) detectors with low content of nitrogen impurities were fabricated and characterized. The intrinsic properties of the SCD samples were characterized using Raman spectroscopy, stereomicroscopy, and X-ray diffraction with the rocking curve mode, cathode luminescence(CL), and infrared and ultraviolet-visible-near infrared spectroscopies. After packaging the detectors, the dark current and energy resolution under α particle irradiation were investigated. Dark currents of less than 5 pA at 100 V were obtained after annealing the electrodes, which is comparable with the optimal value previously reported. The detector that uses a diamond film with higher nitrogen content showed poor energy resolution, whereas the detector with more dislocations showed poor charge collection efficiency(CCE). This demonstrates that the nitrogen content in diamond has a significant effect on the energy resolution of detectors, while the dislocations in diamond largely contribute to the poor CCE of detectors.

关键词： single-crystal diamond nitrogen impurity detector αparticle

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First-Principles Study on the Electronic Properties of Layered Ga2o3/Teo2 Heterolayers for High-Performance Electronic devices

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SSRN 2022年

作者： Dong, Linpeng Li, Penghui Zhao, Yan Miao, Yuanhao Peng, Bo Liu, Weiguo Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test Xi'an Technological University Xi'An710032 China Key laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'An710071 China

Layered Ga2O3 with ultra-high electron mobility and wide bandgap has attracted extensive attention. However, the bottleneck of p-type conducting restricts its potential. Here, we investigate the structural, electronic and carrier mobility properties of stacked layered Ga2O3/TeO2 heterolayers on the basis of first-principles calculations. All the investigated heterolayers exhibit high thermodynamic stability and type-II band alignment characteristic. The built-in electric field direction depends on the stacking pattern, which points from layered Ga2O3 to ML (monolayer) TeO2 for AB stacking pattern and reverses for AAꞌ stacking pattern. Both exceptionally high electron and hole mobility are found in layered Ga2O3/TeO2 heterolayers with AB stacking pattern. For BL (bilayer) Ga2O3/TeO2 heterolayer, the μn and μp along a direction are 16977 and 46585 cm2V-1s-1, respectively, and the corresponding mobility along b direction are 19510 and 49870 cm2V-1s-1, respectively. The current-voltage (I-V) curve result of the transistors based on ML Ga2O3/TeO2 heterolayer channel further confirms the enhanced conducting property. All these results indicate that the layered Ga2O3 based heterolayers integrating with ML TeO2 have excellent performance, especially for high-performance photodetectors and transistors. More importantly, our study applies a new strategy to overcome the p-type conducting issue of layered Ga2O3, thus favorable for high-performance photodetectors and transistors. © 2022, The Authors. All rights reserved.

关键词： Gallium compounds

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Manipulate energy transport via fluorinated spacers towards recordefficiency 2D Dion-Jacobson CsPbI_(3) solar cells

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Science Bulletin 2022年第13期67卷 1352-1361,M0004页

作者： Yutian Lei Zhenhua Li Haoxu Wang Qian Wang Guoqiang Peng Youkui Xu Haihua Zhang Gang Wang Liming Ding Zhiwen Jin School of Physical Science and Technology&Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education Lanzhou UniversityLanzhou 730000China School of Physical Science and Technology&Lanzhou Center for Theoretical Physics&Key Laboratory of Theoretical Physics of Gansu Province Lanzhou UniversityLanzhou 730000China Delft University of Technology Photovoltaic Materials and Devices GroupDelft 2628CDthe Netherlands Institute of Molecular Plus Tianjin UniversityTianjin 300072China Department of Microelectronic Science and Engineering School of Physical Science and TechnologyNingbo UniversityNingbo 315211China Key Laboratory of Nanosystem and Hierarchical Fabrication National Center for Nanoscience and TechnologyBeijing 100190China

Two-dimensional(2D)Dion-Jacobson(D-J)-type cesium lead iodide CsPbI_(3) perform remarkably in terms of ***,the complex interactions between spacer and inorganic layers limit its excellent progress in perovskite solar cells(PSCs).Herein,starting from the considerable structural diversity of organic spacers,we engineer 2D CsPbI_(3) with fine-tuning ***,for the first time we embedded fluorinated aromatic cations in 2D D-J CsPbI_(3),and successfully applied it into construction of high-performance *** with constitutive 1,4-diaminobenzene(PDA),the fluorinated 2-fluorobenzene-1,4-diamine(F-PDA)component greatly expands the dipole moment from 0.59 D to 3.47 D,which reduces the exciton binding energy of the system.A theoretical study shows that the spacer layer and inorganic plane are more enriched with charge accumulation in(F-PDA)Csn±1 Pb_(n)I_(3n+1).The results show that(F-PDA)Csn±1Pb_(n)I_(3n+1) demonstrates more significant charge transfer between organic and inorganic layers than(PDA)Csn±1 Pb_(n)I_(3n+1),and it is confirmed in the femtosecond transient absorption ***,the interactions of the fluorinated spacer with the[PbI_(6)]_(4)-plane effectively manipulate the crystallization quality,and thus the ion migration and defect formation of target 2D CsPbI_(3) are *** a result,we obtained a record power conversion efficiency(PCE)beyond 15%for 2D D-J(F-PDA)Cs_(3)Pb_(4)I_(13)(n=4)PSCs with significantly improved environmental stability compared with the three-dimensional(3D)counterparts.

关键词： Dion-Jacobson CsPbI_(3) Fluorinated spacers Energy transport Interaction

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Congenital hydrocephalus:a review of recent advances in genetic etiology and molecular mechanisms

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Military Medical Research 2024年第6期11卷 942-958页

作者： Xiu-Yun Liu Xin Song Marek Czosnyka Chiara Robba Zofia Czosnyka Jennifer Lee Summers Hui-Jie Yu Guo-Yi Gao Peter Smielewski Fang Guo Mei-Jun Pang Dong Ming Medical School Tianjin UniversityTianjin 300072China State Key Laboratory of Advanced Medical Materials and Devices Tianjin UniversityTianjin 300072China Haihe Laboratory of Brain-Computer Interaction and Human-Machine Integration Tianjin 300380China School of Pharmaceutical Science and Technology Tianjin University300072 TianjinChina Department of Clinical Neurosciences Addenbrooke’s HospitalUniversity of CambridgeCambridge CB20QQUK San Martino Policlinico Hospital IRCCS for Oncology and Neuroscience16132 GenoaItaly Department of Anesthesiology and Critical Care Medicine Johns Hopkins UniversityBaltimoreMD 21287USA Department of Neurosurgery Tianjin Medical University General HospitalTianjin 300052China Department of Neurosurgery Beijing Tiantan HospitalCapital Medical UniversityBeijing 100070China Department of Neurosurgery Tianjin Huanhu HospitalTianjin 300350China

The global prevalence rate for congenital hydrocephalus(CH)is approximately one out of every five hundred births with multifaceted predisposing factors at *** influences stand as a major contributor to CH pathogenesis,and epidemiological evidence suggests their involvement in up to 40%of all cases observed *** about an individual’s genetic susceptibility can significantly improve prognostic precision while aiding clinical decision-making ***,the precise genetic etiology has only been pinpointed in fewer than 5%of human *** occurrences of CH cases are required for comprehensive gene sequencing aimed at uncovering additional potential genetic loci.A deeper comprehension of its underlying genetics may offer invaluable insights into the molecular and cellular basis of this brain *** review provides a summary of pertinent genes identified through gene sequencing technologies in humans,in addition to the 4 genes currently associated with CH(2 X-linked genes L1CAM and AP1S2,2 autosomal recessive MPDZ and CCDC88C).Others predominantly participate in aqueduct abnormalities,ciliary movement,and nervous system *** prospective CH-related genes revealed through animal model gene-editing techniques are further outlined,focusing mainly on 4 pathways,namely cilia synthesis and movement,ion channels and transportation,Reissner’s fiber(RF)synthesis,cell apoptosis,and ***,the proper functioning of motile cilia provides significant impulsion for cerebrospinal fluid(CSF)circulation within the brain ventricles while mutations in cilia-related genes constitute a primary cause underlying this *** far,only a limited number of CH-associated genes have been identified in *** integration of genotype and phenotype for disease diagnosis represents a new trend in the medical *** models provide insights into the pathogenesis of CH and contribute to our understanding of its association w

关键词： Congenital hydrocephalus Genetic disease Central system Cilia Ventricle

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Dramatically Improved Piezo-Photocatalytic Activity in Pvdf@Bi2moo6/Biobr Composite Films Via Constructing Built-In Polarization Field in Heterojunctions

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SSRN 2023年

作者： Liu, Ming Liu, Aikun Zhang, Hongjian Li, Shuxuan Zhang, Yong State Key Laboratory of Silicate Materials for Architectures Center for Smart Materials and Device Integration School of Materials Science and Engineering Wuhan University of Technology Wuhan430070 China College of Physics and Optoelectronic Engineering Key Laboratory of Optoelectronic Devices and Systems Ministry of Education and Guangdong Province Shenzhen University Shenzhen518060 China

The coupling effect of piezo-photocatalytic technology is well demonstrated as a promising strategy for effective degradation of organic pollutants. However, the catalytic efficiency is dramatically limited by the undesirable neutralization of photogenerated electron-hole pairs. Herein, PVDF@Bi2MoO6/BiOBr heterojunction was designed elaborately to boosting their piezo-photocatalytic activity by built-in polarization field and controlled carrier transfer. The composite film presents excellent degradation performance of methyl orange (MO, 15 mg/L) (98.99%, 120 min) under the simultaneous ultrasonic vibration and visible light irradiation, which is around 2 and 3.1 times than that of individual piezoelectric and photocatalytic process. The intrinsic mechanism was revealed and analyzed in detail, that PVDF enhances the built-in piezoelectric field generated by vibrating p-type BiOBr nanosheets, and effectively reduces the recombination efficiency of photogenerated carriers at the p-n heterojunction interface, thereby dramatically improving the catalytic efficiency. This work proposes and demonstrates the very positive role of dual piezoelectricity in modulating the photocatalytic efficiency in semiconductors, which provides a new paradigm for the further development of highly-efficient piezo-photocatalysts to be applied in environmental purification and wastewater treatment. © 2023, The Authors. All rights reserved.

关键词： Bismuth compounds

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Higher order BIC of metasurface excited by magnetic EIT

Higher order BIC of metasurface excited by magnetic EIT

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International Applied Computational Electromagnetics Society Symposium (ACES)

作者： Qun Ren Fangmiao Wang Yongjing Dang Xiaoman Wang Jianwei You Xiuyu Wang Wei E. I. Sha School of Electrical and Information Engineering Tianjin University Tianjin China Purple Mountain Laboratories Nanjing China State Key Laboratory of Millimeter Waves School of Information Science and Engineering Southeast University Nanjing China Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology School of Microelectronics Tianjin University Tianjin China Key Laboratory of Micro-Nano Electronic Devices and Smart Systems of Zhejiang Province College of Information Science and Electronic Engineering Zhejiang University Hangzhou China

ISBN: (数字)9798350355581

ISBN: (纸本)9798350355598

Metasurfaces enable complex modulation of terahertz waves. However, the quality factor of metallic metasurfaces is often limited by intrinsic ohmic losses. The concept of bound states in the continuum (BIC) has been proposed to enhance terahertz-matter interactions. High order BICs have garnered attention due to their robustness. Previous studies on high-order BICs focused on photonic crystals, requiring high structural symmetry. In this paper, we propose a metasurface design based on the magnetic Electromagnetic induced transparency (EIT) effect to excite higher-order BIC eigenmodes. This novel approach and the resulting robust modes hold great potential for terahertz sensing and communication applications.

关键词： Q-factor Optical losses Electric potential Modulation Photonic crystals Metasurfaces Computational electromagnetics Robustness Sensors Electromagnetics

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Nonvolatile, Reversible and Multi-Level Terahertz Modulation Switched by Femtosecond-Laser Induced Ge-Sb-Te Nanofilm Phase Change

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SSRN 2024年

作者： Wang, Jiatong Zhang, Min Liu, Wenquan Li, Ling Hou, Shaodong Song, Qi Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering State Key Laboratory of Radio Frequency Heterogeneous Integration Shenzhen University Shenzhen518060 China School of Physics Science and Information Technology Liaocheng University Liaocheng252059 China Changzhou Inno Machining Co ltd. Changzhou213164 China Center for Opto-Electronic Engineering and Technology Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen518055 China

Ge-Sb-Te (GST) exhibits huge potential in Terahertz (THz) dynamic plasmonic modulation, serving as active component responsive to extra stimuli. In this work, multi-level, nonvolatile, reversible and all-optical THz modulation is achieved by GST femtosecond laser-induced phase change. An insulator-to-metal transition as well as a metal-to-insulator transition is obtained with increasing excitation laser fluence. The local electronical and optical properties of GST laser-induced phase change are demonstrated by near-field THz time-domain spectroscopy (THz-TDS) system, providing an alternative for THz plasmonic manipulation. Raman measurements are employed to validate the phase change from phonon’s perspective. In addition, ultrafast carrier dynamics of GST films is investigated. It is hopeful that this work will empower the advancement of THz multi-level, nonvolatile, reversible and all-optical dynamic modulation. © 2024, The Authors. All rights reserved.

关键词： Femtosecond lasers

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