检索结果-内蒙古大学图书馆

SSRN 2024年

作者： Han, Feng Zhang, Jiashun Wang, Liangliang Cui, Pengwei Wang, Yue An, Junming Chen, Jun Sun, Bingli Zhou, Tianhong Jining Normal University School of Physics and Electronic Information Engineering Wulanchabu 012000 China Key Laboratory of Optoelectronic Materials and Devices Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Optoelectronic Circuit and Integration Henan Shijia Photons Technology Co. Ltd. Henan Hebi458030 China

A E-band，48 channels flat top silica based dense wavelength-division multiplexing (DWDM) arrayed waveguide grating (AWG) was designed and fabricated with 0.75% relative refractive index difference. In order to reduce the center wavelength drift caused by the refractive index of silica material changing with external environmental temperature, the AWG chip was athermal packaged, and the center wavelength drift was reduced from 8.2 pm/° C to 0.643 pm/° C. The transmission spectra were measured, which the results shows that optical performance is uniform. The tested 53.12 Gbps PAM-4 high-speed transmission eye signals are clearly visible, extinction ratio is more than 2.7 dB. © 2024, The Authors. All rights reserved.

关键词： Dense wavelength division multiplexing

来源：评论

学校读者我要写书评

暂无评论

3D Printed Microlens Probe for Optical Coherence Tomography

3D Printed Microlens Probe for Optical Coherence Tomography

引用

Asia Communications and Photonics Conference and Exhibition (ACP)

作者： Yalong Tai Zhuorong Li Dejun Liu Bozhe Li Rui Zhu Jianan Li Qiang Li Haiping Liu Changrui Liao Yiping Wang Shenzhen Key Laboratory of Photonic Devices and Sensing Systems for Internet of Things Guangdong and Hong Kong Joint Research Centre for Optical Fibre Sensors State Key Laboratory of Radio Frequency Heterogeneous Integration Shenzhen University Shenzhen China Shenzhen Key laboratory of Ultrafast Laser Micro/Nano Manufacturing Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education/Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen China International Graduate School at Shenzhen Tsinghua University Shenzhen China Shenzhen Vivolight Medical Device & Technology Co. Ltd. Shenzhen China State Key Laboratory of Transient Optics and Photonics Xi'an Institute of Optics and Precision Mechanics Chinese Academy of Sciences Xi'an China

Microsized endoscopy is increasingly demanded in medical clinical diagnosis for imaging in small blood vessels or delicate organs. In this paper, we propose a 3D printed side-viewing microlens on fiber tip by using the femtosecond laser two-photon polymerization (TPP) method for optical coherence tomography (OCT) imaging applications. The printed microlens is only 210 μm in width and 270 μm in height, its measured lateral resolution is around 9.4 μm in air. It is demonstrated that the proposed microlens can easily profile the depth resolved inner structure of a homemade plastic pipe.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Synthesis of two-dimensional transition metal dichalcogenides for electronics and optoelectronics

引用

InfoMat 2021年第4期3卷 362-396页

作者： Min Wu Yonghong Xiao Yang Zeng Yuanliang Zhou Xiangbin Zeng Lining Zhang Wugang Liao College of Electronic and Information Engineering Insitute of Microscale Opteletronics Shenzhen Engineering Laboratory of Phosphorene and OptoelectronicsSZU-NUS Collaborative Innovation Centre for Optoelectronic Science and TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceShenzhen UniversityShenzhenPeople's Republic of China Shenzhen Geim Graphene Center Tsinghua Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhenPeople's Republic of China Laboratory for Optoeletronic Devices and Informnation Integration School of Optical and electronic InformationHuazhong Universty of Science and TechnologyWuhanPeople's Republic of China School of Electronic and Computer Engineering Peking UniversityShenzhenPeople's Republic of China

Tremendous efforts have been devoted to preparing the ultrathin two-dimensional(2D)transition-metal dichalcogenides(TMDCs)and TMDCS-based heterojunctions owing to their unique properties and great potential applications in next generation electronics and optoelectronics over the past ***,to fulfill the demands for practical applications,the batch production of 2D TMDCs with high quality and large area at the mild condi-tions is still a *** feature article reviews the state-of-the art research progresses that focus on the preparation and the applications in elec-tronics and optoelectronics of 2D TMDCs and their van der Waals ***,the preparation methods including chemical and physical vapor deposition growth are comprehensively ***,recent progress on the application of fabricated 2D TMDCs based materials is revealed with particular attention to electronic(eg,field effect transistors and logic circuits)and optoelectronic(eg,photodetectors,photovoltaics,and light emitting diodes)***,the challenges and future prospects are considered based on the current advance of 2D TMDCs and related heterojunctions.

关键词： electronic and optoelectronic application transition metal dichalcogenides two-dimensional materials van der Waals heterojunctions

来源：评论

学校读者我要写书评

暂无评论

Deep tissue super-resolution imaging with adaptive optical two-photon multifocal structured illumination microscopy

引用

PhotoniX 2023年第1期4卷 1-15页

作者： Chenshuang Zhang Bin Yu Fangrui Lin Soham Samanta Huanhuan Yu Wei Zhang Yingying Jing Chunfeng Shang Danying Lin Ke Si Wei Gong Junle Qu Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China Department of Computer Science and Technology Anhui University of Finance and EconomicsBengbu 233030China Guangdong-Hongkong-Macao Institute of CNS Regeneration Ministry of Education CNS Regeneration Collaborative Joint LaboratoryJinan UniversityGuangzhou 510632China Shenzhen Institute of Neuroscience Shenzhen 518057China MOE Frontier Science Center for Brain Science&Brain-Machine Integration NHC and CAMS Key Laboratory of Medical NeurobiologySchool of Brain Science and Brain MedicineZhejiang UniversityHangzhou 310058China

Visualization of axons and dendritic spines is crucial in neuroscience ***,traditional microscopy is limited by diffraction-limited resolution and shallow imaging depth,making it difficult to study neuronal ***-photon multifocal structured illumination microscopy(2P-MSIM)provides super-resolution imaging along with a reasonably good penetration,but it is vulnerable to optical aberrations in deep *** we present a novel non-inertial scanning 2P-MSIM system incorporated with adaptive optics(AO)which allows for super-resolution imaging with effective aberration *** strategy is designed to correct both laser and fluorescence paths simultaneously using a spatial light modulator and a deformable mirror respectively,providing better results than the individual path *** successful implementation of adaptive optical two-photon multifocal structured illumination microscopy(AO 2P-MSIM)has allowed for the super-resolution imaging of neuronal structures in a mouse brain slice at great depths and dynamic morphological characteristics of zebrafish motoneurons in vivo.

关键词： Super-resolution Adaptive optics In vivo imaging Neurons

来源：评论

学校读者我要写书评

暂无评论

Suppression of Bulk Traps in Al2o3 Gate Dielectric and its Effect on Threshold Voltage Instability in Al2o3/Algan/Gan Metal-Oxide-Semiconductor High Electron Mobility Transistors

SSRN

引用

SSRN 2023年

作者： Deng, Kexin Huang, Sen Wang, Xinhua Jiang, Qimeng Yin, Haibo Fan, Jie Jing, Guanjun Wei, Ke Zheng, Yingkui Shi, Jingyuan Liu, Xinyu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Bulk trapping and its effects on threshold voltage hysteresis (ΔVTH) in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) are researched through isothermal capture transient spectroscopy. A post deposition annealing (PDA) at 500 ℃ in the O2 ambient is confirmed to be an effective way to reduce the bulk traps in the atomic layer deposited (ALD)-Al2O3 film as it contributes to the suppressed ΔVTH in Al2O3/AlGaN/GaN MOS-HEMTs. Isothermal-mode capacitance deep level transient spectroscopy (C-DLTS) is utilized to investigate the threshold voltage instability in Al2O3/AlGaN/GaN MOS-HEMTs. The evolution of the C-DLTS signals verifies the continual charging of oxide bulk traps in the Al2O3 gate dielectric once the gate bias of the MOS-HEMTs is applied exceeding +3 V, which leads to the degraded ΔVTH as well as subthreshold slopes in transfer characterization. Such traps probably stem from the Al-O-H component in as-deposited Al2O3 layers, as detected by X-ray photoelectron spectroscopy (XPS) analysis. Energy band simulation further illustrates the capture process of the oxide bulk traps, verifying the physical relationship between bulk-trapping and ΔVTH. © 2023, The Authors. All rights reserved.

关键词： Gallium nitride

来源：评论

学校读者我要写书评

暂无评论

Direct Cu-polyimide Bonding Achieved by Surface Activation and Pt-catalyzed Formic Acid Atmosphere

Direct Cu-polyimide Bonding Achieved by Surface Activation a...

引用

2021 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2021

作者： Meng, Ying Gao, Runhua Wang, Xinhua Chen, Xiaojuan Huang, Sen Wei, Ke Wang, Dahai Mu, Fengwen Liu, Xinyu Chinese Academy of Sciences High-Frequency High-Voltage Device and Integrated Circuits RD Center Institute of Microelectronics Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9781665417471

Recent flexible printed circuit applications of high-frequency wireless communication systems require thicker metal layers on substrates for lower ohmic losses. In this paper, a Cu layer over 50-micron thick was directly generated on the polyimide substrate by heterogeneous bonding method without interlayer. The polyimide was first sputtered a 200 nm-thick Cu layer, and then was activated by oxygen plasma to improve its hydrophilicity and achieve direct adhesion between polyimide and nanoscale Cu deposition, and eventually was bonded with a 50micron-thick Cu foil in a Pt-catalyzed formic acid atmosphere by thermo-compression. The effectiveness of this method was verified by comparing bonding interfaces, shear strength, and fracture modes of bonded samples with and without a Cr interlayer. This method provides a new idea for the integration of heterogeneous materials needed in wearable products and flexible printed circuits. © 2021 IEEE.

关键词： Formic acid

来源：评论

学校读者我要写书评

暂无评论

First Demonstration of High-Sensitivity (NEP<1fW•Hz-1/2) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic integration of Ga2O3 Photodetectors and Oxide Thin-Film-Transistors

First Demonstration of High-Sensitivity (NEP<1fW•Hz-1/2) Ba...

引用

Symposium on VLSI technology

作者： Yuan Qin Congyan Lu Zhaoan Yu Zhihong Yao Feihong Wu Danian Dong Xiaolong Zhao Guangwei Xu Yuhao Zhang Shibing Long Ling Li Ming Liu Key Laboratory of Microelectronics Devices &#x0026 Integration Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China Center of Power Electronics Systems Virginia Polytechnic Institute and State University Blacksburg VA USA School of Microelectronics University of Science and Technology of China Hefei China

ISBN: (纸本)9781665497732

We, for the first time, demonstrated a back-illuminated active-matrix deep UV (DUV) image sensor by monolithically integrating an ultra-wide bandgap (UWBG) Ga 2 O 3 photodetector (PD) array and IGZO thin-film-transistors (TFT) based on a low temperature back-end-of-line (BEOL) process. Benefited from the low off-state current of 10 -13 A, high on/off ratio of 5×10 8 , and high stability of IGZO TFTs, the integrated PD/TFT sensor cell presents super-high sensitivity with NEP down to 1fW•Hz -1/2 with a high responsivity and specific detectivity of 302A/W and 1.7×10 15 Jones, respectively. The 32×32 DUV image sensor shows excellent uniformity and demonstrates a superior image recognition ability with light intensity down to 2 μW/cm 2 . This scalable, high-resolution DUV image sensor shows great promise for advanced imaging and machine vision applications.

关键词： Image sensors Sensitivity Machine vision Monolithic integrated circuits Very large scale integration Photodetectors Thin film transistors

来源：评论

学校读者我要写书评

暂无评论

Multi-model Selection and Computation Resource Allocation Driven Cooperative Spectrum Sensing

引用

IEEE Internet of Things Journal 2025年

作者： Wang, Qian Zhu, Dehao Qian, Li Ping Gu, Tingting Liang, Ying-Chang Kam, Pooi-Yuen Zhejiang University of Technology Institute of Cyberspace Security Hangzhou310023 China ZJUT Research Center of Electromagnetic Space Security Binjiang Institute of Artificial Intelligence Hangzhou310056 China Zhejiang University State Key Laboratory of CAD and CG College of Electrical Engineering Hangzhou310027 China Chengdu611731 China School of Science and Engineering Shenzhen518172 China Center for Advanced Microelectronic Devices Suzhou215123 China

Cooperative spectrum sensing (CSS) plays a crucial role in this era of explosive Internet of Things with scarce spectrum resources, since it can effectively enhance the sensing accuracy with the cooperation of secondary users (SUs). However, most existing CSS algorithms primarily focus on increasing the cooperative detection accuracy, while neglecting the computational complexity or sensing latency. Therefore, we propose a deep learning (DL) driven CSS scheme with the consideration of dynamic multi-model selection and suitable resource allocation. Specifically, we first derive the closed-form expressions to fit and characterize the detection and false alarm probabilities of three popular DL models, including the convolutional neural network, the long short-term memory (LSTM) network and the hybrid convolutional LSTM network. Then, the problem of minimizing the cooperative sensing error is formulated under the constrains of limited computational resource and sensing latency. Finally, the cross-entropy algorithm is employed to dynamically select the most suitable cooperating SU set and their correspondingly matched models, to balance the sensing accuracy and computational complexity. Simulation results demonstrate that our CSS scheme are much more robust and computationally efficient compared to some well-known CSS algorithms, especially in achieving extremely high sensing accuracy at low transmit power or low received signal-to-noise ratio. © 2014 IEEE.

关键词： Convolutional neural networks

来源：评论

学校读者我要写书评

暂无评论

Improved Multi-bit Storage Reliablity by Design of Ferroelectric Modulated Anti-ferroelectric Memory

Improved Multi-bit Storage Reliablity by Design of Ferroelec...

引用

International Electron devices Meeting (IEDM)

作者： Yannan Xu Yang Yang Shengjie Zhao Tiancheng Gong Pengfei Jiang Yuan Wang Peng Yuan Zhiwei Dang Yuting Chen Shuxian Lv Yaxin Ding Yan Wang Jinshun Bi Qing Luo Ming Liu Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China

ISBN: (纸本)9781665425735

For the first time, we present a new concept of ferroelectric modulated anti-ferroelectric memory with independent 2-step state switching and large polarization as a promising option for multi-bit storage in advanced technology nodes. We show that 1) based on the Landau-Ginzburg-Devonshire (LGD) theory, 4 stable states of AFE with built-in field can be obtained. 2) non-volatile 2-bit storage is demonstrated in AFE due to bipolar built-in field introduced by FE polarization switching. 3) The $F$ E+A $F$ E device shows double-peak $\mathrm{E}_{\mathrm{c}}$ distribution and large $2\mathrm{P}_{\mathrm{r}}$ of 33.8 $\mu \mathrm{C}/\text{cm}^{2}$ with good process stability. 4) Benefit from independently step-by-step switching and large density of effective FE domain, the improved multi-bit storage reliability is verified by kinetic Monte Carlo modeling, compared to conventional multi-bit technology.

关键词： Nonvolatile memory Shape Statistical distributions Superlattices Switches Control systems Reliability engineering

来源：评论

学校读者我要写书评

暂无评论

A DC-DC converter utilizing $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ Schottky barrier diode

A DC-DC converter utilizing $\beta-\text{Ga}_{2}\mathrm{O}_{...

引用

IEEE Electron devices technology and Manufacturing Conference (EDTM)

作者： Wei Guo Guangzhong Jian Feihong Wu Kai Zhou Guangwei Xu Xuanze Zhou Qiming He Xiaolong Zhao Shibing Long School of Microelectronics University of Science and Technology of China Hefei China Key Laboratory of Microelectronics Devices and Integration Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China

The β-Ga2O3 Schottky barrier diode (SBD) is fabricated and actualized a breakdown voltage of 472 V. A SPICE model for β-Ga2O3 Sbd is derived from experimental results and applied to DC-DC converter circuit simulatio... 详细信息

ISBN: (纸本)9781728181769;9781728181776

The β-Ga₂O₃ Schottky barrier diode (SBD) is fabricated and actualized a breakdown voltage of 472 V. A SPICE model for β-Ga₂O₃ Sbd is derived from experimental results and applied to DC-DC converter circuit simulation. Then the β-Ga₂O₃ SBD is implemented in a DC-DC converter circuit and acquired the conversion efficiency of 94.8%, indicating the great potential of Ga₂O₃-based devices and circuits.

关键词： Schottky diodes Electric potential Circuit simulation Schottky barriers DC-DC power converters Packaging SPICE

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：