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3rd International Conference on Optics and Machine Vision, ICOMV 2024

作者： Lin, Xiaoping Zhao, Jing Xiamen Institute of Technology Xiamen361021 China The Higher Educational Key Laboratory for Flexible Manufacturing Equipment Integration of Fujian Province Xiamen Institute of Technology Xiamen361021 China Key Laboratory of Physical Electronics and Devices of Ministry of Education Shaanxi Key Laboratory of Information Photonic Technique School of Electronic Science and Engineering Xi’an Jiaotong University Xi’an710049 China

ISBN: (纸本)9781510680319

A terahertz refractive index sensor with high sensitivity that can be actively adjusted and is controlled by the states in the continuum is designed. The sensor is constructed from an asymmetric graphene double split-ring, and by disrupting the symmetry of the structure, it can transform the resonance into a high-Q leak-mode resonance, which is very sensitive to variations in the surrounding medium’s refractive index. The effects of the chemical potential of graphene, the refractive index of the analyte and the thickness of the analyte on the transmission spectrum were numerically simulated by the finite element method. The results show that the Q-factor of the graphene metasurface reaches 105, its sensitivity is 288 GHz/RIU, and its FOM is 21. The proposed structure has potential applications in the field of highly sensitive photonic sensors in the terahertz range. © 2024 SPIE.

关键词： Graphene

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Optically pumped wavelength-tunable lasing from a GaN beam cavity with an integrated Joule heater pivoted on Si

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Chinese Physics B 2023年第5期32卷 478-484页

作者：秦飞飞孙阳杨颖李欣王旭卢俊峰王永进朱刚毅 GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province College of Telecommunications and Information EngineeringNanjing University of Posts and TelecommunicationsNanjing 210003China Key Laboratory of Broadband Wireless Communication and Sensor Network Technology(Nanjing University of Posts and Telecommunications Ministry of Education)Nanjing 210003China Department of Microelectronic Science and Engineering School of Physical Science and TechnologyNingbo UniversityNingbo 315211China College of Physics Nanjing University of Aeronautics and AstronauticsNanjing 211106China

Dynamically tunable laser sources are highly promising for realizing visionary concepts of integrated photonic circuits and other applications. In this paper, a Ga N-based laser with an integrated PN junction heater on Si is *** photoluminescence properties of the Ga N beam cavity are controlled by temperature, and the Joule heater provides electrically driven regulation of temperature. These two features of the cavity make it possible to realize convenient tuning of the lasing properties. The multi-functional Ga N beam cavity achieves optically pumped lasing with a single mode near 362.4 nm with a high Q-factor of 1394. The temperature of this device increases by 0–5℃ under the Joule heating effect. Then, electrical control of the lasing mode is demonstrated. The lasing resonant peak shows a continuous redshift of about 0.5 nm and the device also exhibits dynamic switching of its lasing mode. The lasing modulation can be ascribed to temperature-induced reduction of the bandgap. Our work may be of benefit for external optical modulation in future chip-based optoelectronic devices.

关键词： GaN beam cavity optically pumped lasing dynamically tunable laser source Joule heater

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Optimizing Flash Memory Towards Storage-Class Memory (SCM) Applications 17

Optimizing Flash Memory Towards Storage-Class Memory (SCM) A...

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17th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2024

作者： Guo, Xinyi Feng, Yang Liu, Jing Zhang, Junyu Zhan, Xuepeng Wu, Jixuan Chen, Jiezhi School of Information Science and Engineering Shandong University Qingdao China Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integrated Technology Beijing China Neumem Co. Ltd Hefei China

ISBN: (纸本)9798350361834

Aiming at the applications of flash memories as storage-class memory (SCM), we did a comprehensive study on the operation schemes of flash cells for fast Program/Erase (PE) cycling, high endurance and read stabilities. By adopting the channel-hot-electron injection (CHEI) and hot-hole injection (HHI) as PE schemes, as large as ∼ 5 V memory window (MW) can be realized and the endurance can reach ∼ 10 6 PE cycles. As for 1-bit operation with sub-1V MW, the speed can be as fast as ∼ 10ns and the endurance is over 109 PE cycles. Moreover, with the incremental-step-pulse-program (ISPP) method, 64 states (6-bit/cell) with high linearity and robust stabilities could be obtained. Our results demonstrate that there is a large flexibility to optimize flash cells as SCM, especially for the read-intensive applications and energy-efficient computing-in-memory (CiM) architectures. © 2024 IEEE.

关键词： Flash memory

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Innovative dual-mode device integrating capacitive desalination and solar vapor generation for high-efficiency seawater desalination

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Journal of Energy Chemistry 2025年第1期100卷 171-179页

作者： Jiacheng Wang Zhaoyu Chen Ruduan Yuan Jiaxin Luo Ben Zhang Keju Ji Meng Li Juanxiu Xiao Kuan Sun National Innovation Center for Industry-Education Integration of Energy Storage Technology MOE Key Laboratory of Low-grade Energy Utilization Technologies and SystemsCollege of Energy&Power EngineeringChongqing UniversityChongqing 400044China Xuefeng Mountain Energy Equipment Safety National Observation and Research Station CQU-NUS Renewable Energy Materials&Devices Joint LaboratoryChongqing UniversityChongqing 400044China Southwest Technology and Engineering Research Institute Chongqing 400039China Jiangsu Provincial Key Laboratory of Bionic Functional Materials College of Mechanical and Electrical EngineeringNanjing University of Aeronautics and AstronauticsNanjing 210016JiangsuChina State Key Laboratory of Marine Resources Utilization in South China Sea Collaborative Innovation Center of Marine Science and TechnologySchool of Marine Science and EngineeringHainan UniversityHaikou 570228HainanChina

Solar-driven interface evaporation with high solar-to-steam conversion efficiency has shown great potential in seawater ***,due to the influence of latent heat and condensation efficiency,the water yield from solar-driven interface evaporation remains insufficient,posing a significant challenge that requires *** this work,we designed a dual-mode high-flux seawater desalination device that combines solar-driven interface evaporation and capacitive *** utilizing coupled desalination materials exhibiting both photothermal conversion and capacitance activity,the device demonstrated photothermal evaporation rates of 1.41 and 0.97 kg m^(-2)h^(-1)for condensate water yield under one-sun ***,the device exhibited a salt adsorption capacity of up to48 mg g^(-1)and a salt adsorption rate of 2.1 mg g^(-1)*** addition,the salt adsorption capacity increased by approximately 32%under one-sun ***,photo-enhanced capacitive desalination performance was explored through numerical simulations and theoretical *** calculations and characterizations confirmed that the defect energy levels formed by the introduction of sulfur vacancies can effectively widen the light absorption range,improve photothermal conversion performance,and stimulate more photoelectrons to participate in capacitive ***,the electron distribution state of molybdenum disulfide with sulfur vacancies and surface defect sites contributes to ion/electron transport at the solid-liquid *** work provides a novel pathway for integrating solar vapor generation with other low-energy desalination technologies.

关键词： Capacitive deionization Solar vapor generation Molybdenum disulfide Defect engineering

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Dual-NMOS GaN Gate Driver with Active Bootstrap and Infinite-CMTI Level Shifter for Configurable dV/Dt and MHz Operation

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IEEE Transactions on Power Electronics 2025年

作者： Xiong, Yuhao Liu, Xihao Cao, Wenxing Guo, Zhuoqi Xue, Zhongming Geng, Li Xi'an Jiaotong University Shaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips Xi'an Key Laboratory of Micro-Nano Electronics and System Integration and School of Microelectronic Xi'an710049 China

This letter proposes a novel dual-NMOS GaN gate driver integrating an active bootstrap and a high common-mode transient immunity (CMTI) capacitive level shifter. Compared to conventional PMOS-based bootstrap circuits requiring extra level shifters, the proposed design utilizes bidirectional NMOS bootstrap switch pairs with dedicated on-off control circuit, providing reliable floating gate voltage with reduced on-chip area. The capacitive level shifter achieves theoretically infinite CMTI by isolating differential-mode logic signals from common-mode noise through current-mirror-based edge-detection and noise isolation. Furthermore, the dual-NMOS high-side buffer enables continuously adjustable dV/dt via adaptive Miller plateau detection and configurable gate charging currents, reducing switching losses and voltage spikes versus fixed gate-resistor drivers. Experimental results demonstrate a peak efficiency of 91.8% in a 12-to-1.8 V conversion and 4.6% efficiency improvement under 48 V input and 2 MHz switching frequency, validating its potential for high-frequency, high-density power applications such as automotive DC-DC converters. © 1986-2012 IEEE.

关键词： On-off control systems

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Investigation of Vertically Stacked Horizontal Gate-All-Around SI Nanosheet Ion Sensitive Field Effect Transistor For Detection of C-Reactive Protein

Investigation of Vertically Stacked Horizontal Gate-All-Arou...

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2023 China Semiconductor technology International Conference, CSTIC 2023

作者： Liu, Yang Zhang, Qingzhu Li, Junjie Wu, Cinan Cao, Lei Luo, Yanna Zhang, Zhaohao Wei, Shuhua Wei, Qianhui Yao, Jiaxin Hu, Jiawei Qin, Meiyan Liu, Enxu Han, Yanchu Li, LianLian Li, YingLu Yang, Tao Zhou, Na Gao, Jianfeng Li, Junfeng Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integration Technology Beijing100029 China Guizhou University College of Big Data and Information Engineering Guiyang550025 China North China University of Technology School of Information Science and Technology Beijing100144 China State Key Laboratory of Advanced Materials for Smart Sensing Grinm Group Co. Ltd. Beijing100088 China

ISBN: (纸本)9798350311006

In this work, based on advanced gate-all-around (GAA) technology, the extended sensing gate (ESG) GAA Si nanosheet (SiNS) ion sensitive field effect transistor (ISFET) sensor was fabricated and reported for the first time. Due to the GAA structures and the vertically-stacked SiNS channels, the average sensitivity of the ESG GAA SiNS ISFET sensor can be reached 58.8 mV/pH, which provides good gate control and ultra-sensitive detection capabilities. In addition, the actual minimum detection concentration of C-reactive protein (CRP) by ESG GAA SiNS ISFET sensor in 1× PBS environment is as low as 100pg/mL, which is much lower than the normal concentration of human body. © 2023 IEEE.

关键词： Nanosheets

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Polarization-insensitive silicon intensity modulator with a maximum speed of 224 Gb/s

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Photonics Research 2025年第2期13卷 274-285页

作者： ZANYUN ZHANG BEIJU HUANG QIXIN WANG ZILONG CHEN KE LI KAIXIN ZHANG MEIXIN LI HAO JIANG JIAMING XING TIANJUN LIU XIAOQING LV GRAHAM T.REED Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems School of Electronic and Information EngineeringTiangong University Key Laboratory of Optoelectronic Materials and Devices Institute of SemiconductorsChinese Academy of Sciences Suzhou Institute of Microelectronics and Optoelectronics Integration Key Laboratory for Biomedical Engineering of Ministry of Education Zhejiang University Peng Cheng Laboratory Optoelectronics Research Centre University of Southampton

Polarization-insensitive optical modulators allow an external laser to be remotely interconnected by single-mode optical fibers while avoiding polarization controllers,which would be convenient and cost-effective for co-packaged optics,5G,and future 6G *** this article,a polarization-insensitive silicon intensity modulator is proposed and experimentally demonstrated based on two-dimensional centrally symmetric gratings,featuring a low polarization-dependent loss of 0.15 dB in minimum and polarization insensitivity of eye *** device exhibits a low fiber-to-fiber insertion loss of 9 dB and an electro-optic (EO) bandwidth of 49.8 GHz.A modulation speed of up to 224 Gb/s is also demonstrated.

关键词： Chemical vapor deposition Indium tin oxide Optical transceivers Polarization maintaining fibers Signal transmission Silicon modulators

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Graphene MEMS and NEMS

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Microsystems & Nanoengineering 2024年第5期10卷 1-34页

作者： Kuge Fan Chang He Jie Ding Qiang Gao Hongliang Ma Max CLemme Wendong Zhang Advanced Research Institute of Multidisciplinary Sciences Beijing Institute of Technology100081 BeijingChina Center for Interdisciplinary Science of Optical Quantum and NEMS Integration School of PhysicsBeijing Institute of Technology100081 BeijingChina School of Integrated Circuits and Electronics Beijing Institute of Technology100081 BeijingChina Chair of Electronic Devices Faculty of Electrical Engineering and Information TechnologyRWTH Aachen UniversityOtto-Blumenthal-Str.2552074 AachenGermany AMO GmbH Otto-Blumenthal-Str.2552074 AachenGermany state Key Laboratory of Dynamic Measurement Technology North University of ChinaTaiyuan 030051China National Key Laboratory for Electronic Measurement Technology School of Instrument and ElectronicsNorth University of ChinaTaiyuan 030051China

Graphene is being increasingly used as an interesting transducer membrane in micro-and nanoelectromechanical systems(MEMS and NEMS,respectively)due to its atomical thickness,extremely high carrier mobility,high mechanical strength,and piezoresistive electromechanical *** devices based on graphene feature increased sensitivity,reduced size,and new *** this review,we discuss the merits of graphene as a functional material for MEMS and NEMS,the related properties of graphene,the transduction mechanisms of graphene MEMS and NEMS,typical transfer methods for integrating graphene with MEMS substrates,methods for fabricating suspended graphene,and graphene patterning and electrical ***,we provide an overview of devices based on suspended and nonsuspended graphene ***,we discuss the potential and challenges of applications of graphene in MEMS and *** to its unique features,graphene is a promising material for emerging MEMS,NEMS,and sensor applications.

关键词： integrating suspended electrical

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Quantum control for time-dependent noise by inverse geometric optimization

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Science China(Physics,Mechanics & Astronomy) 2024年第9期67卷 51-57页

作者： Xiaodong Yang Yingcheng Li Ran Liu Xinfang Nie Tao Xin Dawei Lu Jun Li Institute of Quantum Precision Measurement State Key Laboratory of Radio Frequency Heterogeneous IntegrationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China State Key Laboratory of Surface Physics Department of PhysicsCenter for Field Theory and Particle Physicsand Institute for Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China Shenzhen Institute for Quantum Science and Engineering and Department of Physics Southern University of Science and TechnologyShenzhen 518055China Guangdong Provincial Key Laboratory of Quantum Science and Engineering Southern University of Science and TechnologyShenzhen 518055China Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area(Guangdong) Shenzhen 518045China

Quantum systems are exceedingly difficult to engineer because they are sensitive to various types of *** particular,timedependent noises are frequently encountered in experiments but how to overcome them remains a challenging *** this work,we propose a flexible robust control technique to resist time-dependent noises based on inverse geometric optimization working in the filter-function *** basic idea is to parameterize the control filter function geometrically and minimize its overlap with the noise spectral *** then effectively reduces the noise susceptibility of the controlled system *** show that the proposed method can produce high-quality robust pulses for realizing desired quantum evolutions under realistic noise ***,we demonstrate this method in examples including dynamical decoupling and quantum sensing protocols to enhance their performances.

关键词： time-dependent noise robust control quantum gates and states dynamical decoupling quantum sensing

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Kilowatt level high-power thulium doped fiber laser

Kilowatt level high-power thulium doped fiber laser

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2024 Advanced Fiber Laser Conference, AFL 2024

作者： Zhang, Xiao Dong, Fanlong Yan, Peiguang Wang, Jinzhang Lue, Qitao Guo, Chunyu Ruan, Shuangchen Shenzhen Key Laboratory of Laser Engineering Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province State Key Laboratory of Radio Frequency Heterogeneous Integration College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen518060 China Key Laboratory of Advanced Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes Shenzhen Technology University Shenzhen518118 China Han’s Laser Technology Industry Group Co. Ltd. Shenzhen518057 China

ISBN: (数字)9781510688889

ISBN: (纸本)9781510688872

In this paper, a high power Tm3+-doped fiber laser (TDFL) based on a monolithic master oscillator power amplifier (MOPA) system with the center wavelength is 1940 nm is *** maximum laser power was measured to be 909 W with a slope efficiency of 50.1% at the 793 nm pump power of 1816 W. Power stability of the laser output over 60 min is measured to be ~0.14% .Output power is pump-limited without the onset of parasitic oscillation or amplified spontaneous emission (ASE) even at the maximum power, showing further power scaling should be possible with increase the pump power. © 2025 SPIE.

关键词： Optical pumping

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