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High responsivity and fast response 8×8β-Ga_(2)O_(3)solar-blind ultraviolet imaging photodetector array

Science China(Technological Sciences) 2023年第11期66卷 3259-3266页

作者： SHEN GaoHui LIU Zeng TANG Kai SHA ShuLin LI Lei TAN Chee-Keong GUO YuFeng TANG WeiHua Innovation Center of Gallium Oxide Semiconductor(IC-GAO) College of Integrated Circuit Science and EngineeringNanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China Key Laboratory of Aerospace Information Materials and Physics(NUAA) MIITNanjing 211106China College of Physics MIIT Key Laboratory of Aerospace Information Materials and PhysicsKey Laboratory for Intelligent Nano Materials and DevicesNanjing University of Aeronautics and AstronauticsNanjing 211106China Advanced Materials Thrust Function HubThe Hong Kong University of Science and Technology(Guangzhou)Nansha 511458China Department of Electronic and Computer Engineering School of EngineeringThe Hong Kong University of Science and TechnologyHong Kong 999077China

In this work,an 8×8 Ga_(2)O_(3)solar-blind ultraviolet photodetector array is introduced for image sensing *** 2-in wafer-scaled Ga_(2)O_(3)thin film was grown by metalorganic chemical vapor deposition technique;and the photodetector array was fabricated through ultraviolet photolithography,lift-off,and electron-beam *** addition to the high solar-blind/visible rejection ratio of 104,every photodetector cell in the array has high performance and fast response speed,such as responsivity of 49.4 A W^(-1),specific detectivity of 6.8×10^(14)Jones,external quantum efficiency of 1.9×10^(4)%,linear dynamic range of 117.8 d B,and response time of 41 ms,respectively,indicating the high photo-response performance of the ***,the photodetector array displayed uniform responsivity with a standard deviation of~6%,and presented a sensing image of low chromatic aberration,owing to the high resolution of the photodetector *** a word,this work may contribute to developing Ga_(2)O_(3)-based optoelectronic device applications.

关键词： Ga_(2)O_(3) photodetector array imaging photo-response

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Achieving highly-efficient H2S gas sensor by flower-like SnO_(2)–SnO/porous GaN heterojunction

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Chinese Physics B 2023年第2期32卷 193-200页

作者：刘增都灵张少辉边昂方君鹏邢晨阳李山汤谨诚郭宇锋唐为华 College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China School of Electronic and Information Engineering Jinling Institute of TechnologyNanjing 211169China Institute of Microscale Optoelectronics Shenzhen UniversityShenzhen 518060China Key Laboratory of Luminescence and Optical Information of Ministry of Education Institute of Optoelectronic TechnologyBeijing Jiaotong UniversityBeijing 100044China School of Integrated Circuits Tsinghua UniversityBeijing 100044China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education College of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China State Key Laboratory of Information Photonics and Optical Communications School of ScienceBeijing University of Posts and TelecommunicationsBeijing 100876China

A flower-like SnO_(2)–SnO/porous Ga N(FSS/PGaN) heterojunction was fabricated for the first time via a facile spraying process, and the whole process also involved hydrothermal preparation of FSS and electrochemical wet etching of GaN,and SnO_(2)–SnO composites with p–n junctions were loaded onto PGaN surface directly applied to H_(2)S sensor. Meanwhile,the excellent transport capability of heterojunction between FSS and PGaN facilitates electron transfer, that is, a response time as short as 65 s and a release time up to 27 s can be achieved merely at 150℃ under 50 ppm H_(2)S concentration, which has laid a reasonable theoretical and experimental foundation for the subsequent PGaN-based heterojunction gas *** lowering working temperature and high sensitivity(23.5 at 200 ppm H2S) are attributed to the structure of PGaN itself and the heterojunction between SnO_(2)–SnO and PGaN. In addition, the as-obtained sensor showed ultra-high test *** simple design strategy of FSS/PGaN-based H_(2)S sensor highlights its potential in various applications.

关键词： gas sensor SnO_(2)–SnO porous GaN heterojunction

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Realization of flexible in-memory computing in a van der Waals ferroelectric heterostructure tri-gate transistor

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Nano Research 2024年第3期17卷 1886-1892页

作者： Xinzhu Gao Quan Chen Qinggang Qin Liang Li Meizhuang Liu Derek Hao Junjie Li Jingbo Li Zhongchang Wang Zuxin Chen School of Semiconductor Science and Technology South China Normal UniversityFoshan 528225China Guangdong Provincial Key Laboratory of Chip and Integration Technology Guangzhou 510631China Institute of Solid State Physics Hefei Institutes of Physical Science Chinese Academy of SciencesHefei 230601China School of Science STEM CollegeRMIT UniversityMelbourne 3000Australia CAS Key Laboratory of Functional Materials and Devices for Special Environments Xinjiang Technical Institute of Physics&ChemistryChinese Academy of SciencesUrumqi 830011China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China College of Optical Science and Engineering Zhejiang UniversityHangzhou 310027China International Iberian Nanotechnology Laboratory(INL) Av.Mestre Jose Veiga s/nBraga 4715-330Portugal

Combining logical function and memory characteristics of transistors is an ideal strategy for enhancing computational efficiency of transistor ***,we rationally design a tri-gate two-dimensional(2D)ferroelectric van der Waals heterostructures device based on copper indium thiophosphate(CuInP_(2)S_(6))and few layers tungsten disulfide(WS_(2)),and demonstrate its multi-functional applications in multi-valued state of data,non-volatile storage,and logic *** co-regulating the input signals across the tri-gate,we show that the device can switch functions flexibly at a low supply voltage of 6 V,giving rise to an ultra-high current switching ratio of 107 and a low subthreshold swing of 53.9 mV/*** findings offer perspectives in designing smart 2D devices with excellent functions based on ferroelectric van der Waals heterostructures.

关键词： two-dimensional(2D)ferroelectric heterostructure tri-gate polymorphic regulation in-memory computing

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A Depletion-enhanced N Layers Stacked LDMOS

A Depletion-enhanced N Layers Stacked LDMOS

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Semiconductor and Electronic technology (ISSET), International Symposium on

作者： Qi Li Lanyi Liang Li Guan Tianbao Dang Hong Huang Yonghe Chen Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology Guilin China Navigation Department of Guangxi Zhuang Autonomous Region Key Laboratory of Microelectronic Devices and Integrated Circuits Guilin China

ISBN: (数字)9798350390285

ISBN: (纸本)9798350390292

With the development of power integrated circuits, LDMOS devices assume a significant role in power device applications due to their elevated input impedance and enhanced conversion rate. Nonetheless, a contradictory relationship exists between the breakdown voltage and specific on-resistance in power LDMOS devices. Consequently, an n-layer stacked lateral double-diffused metal-oxide-semi conductor transistor(SLDMOS) is proposed, in which numerous MOS cells are stacked under the same chip area. The on-state resistance $(\mathrm{R}_{\mathrm{o}\mathrm{n}})$ of the n layers S-LDMOS is decreased significantly because of the vertical parallel connection, also the interference among devices is weakened through electrode interconnection isolated by oxidation layer. Multiple drift regions are formed by alternate epitaxy N-layer (drift region) and P-layer (substrate), and each drift region is depleted by the top and bottom P substrates, leading to a much lower $\mathrm{R}_{\mathrm{o}\mathrm{n}}$ . The lightly-doped substrate and N/P top region are used to improve the breakdown characteristics, and the floating P layers are introduced to enhance the depletion effect in drift regions and decrease device thicknesses. By optimizing the configuration, a balanced trade-off is obtained. The simulation results indicate that compared with the traditional LDMOS, the 2 layers S-LDMOS exhibits a BV of 356 V and a specific on resistance $(\mathrm{R}_{\mathrm{o}\mathrm{n},\mathrm{s}\mathrm{p}})$ of 13.56 $\boldsymbol{\mathrm{m}\Omega\cdot \text{cm}^devices,}$ an improvement of 26.2 % and 71.6%, respectively. And the $\mathrm{R}_{\mathrm{o}\mathrm{n}}$ , sp of n layers S-LDMOS will be reduced to less than 1/n of C-LDMOS further.

关键词： Resistance Simulation Stacking Interference Oxidation Epitaxial growth Power integrated circuits Substrates Optimization Testing

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Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes

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Science China(Information Sciences) 2023年第12期66卷 295-296页

作者： Haoran YU Tiancheng GONG Peng YUAN Yuan WANG Zhaomeng GAO Xiaoxin XU Ying SUN Ran CHENG Jianfeng GAO Junfeng LI Bing CHEN Qing LUO Key Laboratory of Microelectronics Devices and Integration Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Micro-Nano Electronics Zhejiang University

Doped HfO2, as an emerging ferroelectric material, could overcome the shortcomings of traditional ferroelectrics [1].Hf0.5Zr0.5O2（HZO） is a good choice for Hf-doped materials because of its excellent ferroelectric properties and mature preparation process. In our previous studies, we proposed a new HZO switchable ferroelectric diode（FE diode） with several advantages, such as high operating speed,

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3D Reservoir Computing with High Area Efficiency (5.12 TOPS/mm2) Implemented by 3D Dynamic Memristor Array for Temporal Signal Processing

3D Reservoir Computing with High Area Efficiency (5.12 TOPS/...

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2022 IEEE Symposium on VLSI technology and Circuits, VLSI technology and Circuits 2022

作者： Sun, Wenxuan Zhang, Woyu Yu, Jie Li, Yi Guo, Zeyu Lai, Jinru Dong, Danian Zheng, Xu Wang, Fei Fan, Shaoyang Xu, Xiaoxin Shang, Dashan Liu, Ming Institute of Microelectronics of Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integrated Technology Beijing China University of Chinese Academy of Sciences Beijing China University of Science and Technology of China School of Microelectronics China

ISBN: (纸本)9781665497725

In this work, we realized a three-dimensional (3D) reservoir computing (RC) by utilizing the I-V nonlinearity and short-term memory of the dynamic memristor in 4-layer vertical array. The cycle-to-cycle variation of the dynamic reservoir is improved by parallel memristor configuration. The dimensionality of the reservoir space is increased by input strategy design. After the hardware-software co-optimization, the proposed 3D RC system exhibits high recognition accuracy (90%), low energy consumption (-0.78 pJ /operation), and high area efficiency (5.12 TOPS/mm2). © 2022 IEEE.

关键词： Memristors

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Monitoring the life cycle stages of Haematococcus pluvialis by using FLIM

Monitoring the life cycle stages of Haematococcus pluvialis ...

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2023 Advanced Fiber Laser Conference, AFL 2023

作者： Deng, Yifeng Li, Changjiang Xiao, Zeyu Chen, Jiakai Wu, Zipei Peng, Xiao Lu, Zhen Yan, Wei Qu, Junle State Key Laboratory of Radio Frequency Heterogeneous Integration Shenzhen University China College of Physics and Optoelectronic Engineering Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province Shenzhen University Shenzhen518060 China Yantai Institute of Coastal Zone Research Chinese Academy of Sciences Yantai264003 China Medical Engineering and Technology College Xinjiang Medical University Urumqi830011 China

ISBN: (纸本)9781510677661

Haematococcus pluvialis is one type of freshwater unicellular microalgae, belonging to the Chlorophyta, Haematococcus. H. pluvialis has high economic value due to its wide variety of nutritional components, including astaxanthin, vitamins, algal polysaccharides, proteins, etc. Current microalgae detection methods are deficient in monitoring the life cycle of H. pluvialis. In this study, we applied the confocal fluorescence microscopy and the fluorescence lifetime imaging microscopy (FLIM) system to observe the different stages of the microalgal cells. The cell morphology and the fluorescence lifetime distributions were obtained for further analysis. The results showed that H. pluvialis had a diameter of about 25μm in the state of flagellated macrozooids (zoospore). When the nutrients in the medium were continuously consumed, the individual cells of H. pluvialis became larger and entered the microzooid stage, whose diameters were around 35μm. The fluorescence lifetime values of H. pluvialis in the macrozooid (zoospore) stage and the microzooid stage were around 700 to 800ps and 1000ps, respectively. The next stage was the palmella stage, in which the diameter of H. pluvialis increased to the range of 40 to 52μm. During this stage, the larger algae began to accumulate red pigment in the center of the cell. Meanwhile, the fluorescence lifetime values near the center of the algal cell increased to around 1300ps, approximately 200ps higher than the values in the periphery of the cells, showing layered properties of H. pluvialis in the palmella stage. In summary, FLIM can provide a real-Time quantitative method for monitoring different life stages and cell morphologies of H. pluvialis during its life cycle in a non-destructive way. © COPYRIGHT SPIE.

关键词： Microalgae

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Generation of single-focus phase singularity by the annulusquadrangle-element coded binary square spiral zone plates

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Science China(Physics,Mechanics & Astronomy) 2022年第9期65卷 72-78页

作者： Huaping Zang Zhuanglei Miao Mengguang Wang Quanping Fan Lai Wei Chuanke Wang Weimin Zhou Yilei Hua Leifeng Cao Xinlian Xue Haizhong Guo Key Laboratory of Material Physics Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China Science and Technology on Plasma Physics Laboratory Laser Fusion Research CenterChina Academy of Engineering PhysicsMianyang 621900China Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China School of Engineering Physics Shenzhen Technology UniversityShenzhen 518118China Collaborative Innovation Center of Light Manipulations and Applications Shandong Normal UniversityJinan 250358China

Optical vortices(OVs) with unique square symmetry are widely used in various applications including particle manipulation,microscopy, and image processing. However, the undesired higher-order foci introduced by the conventional vortex lens such as square spiral zone plates(SSZPs) may lead to additional artifacts and thus degrade contrast sensitivity. In this endeavor, herein,we propose a methodology to combine the merit of SSZPs and the advantage of Gabor zone plates(GZPs) in establishing a specific single optical element, termed binary single focused square spiral zone plates(BSSZPs). In contrast to the abrupt transitions of the SSZPs, our central idea aims to realize the sinusoidal transmittance along the radial direction of SSZPs by a series of randomly distributed annulus-quadrangle-shaped nanometer structure apertures. The innovative design can simultaneously generate OVs with unique square symmetry, and eliminate the interference of higher-order foci along the propagation direction. Guided by our theoretical predication, the focusing property of such optics was further experimentally *** findings are expected to direct new avenue towards improving the performance of optical image processing and alignment system.

关键词： optical vortices higher-order diffraction spiral zone plates topological charges

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An All-Neuron Spiking 2-D Path integration and Map Representation Model Implemented on Neuromorphic Chips 16

An All-Neuron Spiking 2-D Path Integration and Map Represent...

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16th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2022

作者： Liu, Kefei Cui, Xiaoxin Kuang, Yisong Zou, Chenglong Zhong, Yi Xiao, Kanglin Wang, Yuan Peking University Key Laboratory of Microelectronic Devices and Circuits Ministry of Education School of Integrated Circuits Beijing100871 China Peking University Beijing Laboratory of Future Integrated Circuit Technology and Science Beijing100871 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

Some specialized neurons have been found in mammalian brains, like grid cells, place cells, head direction cells and speed cells. These neurons form the positioning system in the brain. In this paper, we propose an all-neuron spiking path integration and map representation model dedicated to neuromorphic hardware by mimicking these biological neurons. We deploy a grid cell network on an energy-efficient neuromorphic chip for robot's location representations in 2-D spaces. The grid cell network shifts its activity by integrating motion information from head direction cells and speed cells. With place cells, multiple maps can be stored on one grid cell network. We test our model on several simulated maps and achieve lower path integration error and lower power consumption compared to RatSLAM. We aim to realize an all-neuron robotic control system fully on the neuromorphic chip, and the internal map representation is an important component. © 2022 IEEE.

关键词： Neurons

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Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics

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Nano Research 2022年第4期15卷 3667-3674页

作者： Peng Yuan Ge-Qi Mao Yan Cheng Kan-Hao Xue Yunzhe Zheng Yang Yang Pengfei Jiang Yannan Xu Yuan Wang Yuhao Wang Yaxin Ding Yuting Chen Zhiwei Dang Lu Tai Tiancheng Gong Qing Luo Xiangshui Miao Qi Liu Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesNo.3Beitucheng West RoadBeijing 100029China University of Chinese Academy of Sciences 19 Yuquan RoadBeijing 100049China School of Integrated Circuits School of Optical and Electronic InformationHuazhong University of Science and Technology1037 Luoyu RoadWuhan 430074China Key Laboratory of Polar Materials and Devices(MOE) Department of ElectronicsEast China Normal University100 Guilin RoadShanghai 430079China Department of Mathematics and Theories Peng Cheng LaboratoryNo.2Xingke 1st StreetShenzhen 518055China

Hafnia-based ferroelectrics have greatly revived the field of ferroelectric memory(FeRAM),but certain reliability issues must be satisfactorily resolved before they can be widely applied in commercial *** particular,the imprint phenomenon severely jeopardizes the read-out reliability in hafnia-based ferroelectric capacitors,but its origin remains unclear,which hinders the development of its recovery *** this work,we have systematically investigated the imprint mechanism in TiN/Hf_(0.5)Zr_(0.5)O_(2)(HZO)/TiN ferroelectric capacitors using experiments and first-principles *** is shown that carrier injection-induced charged oxygen vacancies are at the heart of imprint in HZO,where other mechanisms such as domain pinning and dead layer are less *** imprint model based on electron de-trapping from oxygen vacancy sites has been proposed that can satisfactorily explain several experimental facts such as the strong asymmetric imprint,leakage current variation,and so *** on this model,an effective imprint recovery method has been proposed,which utilizes unipolar rather than bipolar voltage *** remarkable recovery performances demonstrate the prospect of improved device reliability in hafnia-based FeRAM devices.

关键词： hafnia-based ferroelectric imprint build-in electric field oxygen vacancy recovery

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