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检索条件"机构=Key Laboratory of Microelectronics Device&Integrated Technology"
117 条 记 录,以下是1-10 订阅
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Improved positive bias temperature instability of n-type vertical C-shaped-channel nanosheet FET by forming gas annealing
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Microelectronic Engineering 2025年 299卷
作者: Shi, Yunfei Jiang, Songyi Yang, Hong Zhang, Yongkui Zhou, Longda Ji, Zhigang Liu, Qianqian Wang, Qi Zhu, Huilong Luo, Jun Wang, Wenwu Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics Chinese Academy of Science Beijing100029 China National Key Laboratory of Science and Technology on Micro/Nano Fabrication School of Microelectronics Shanghai Jiaotong University Shanghai200240 China Microelectronics Institute University of Chinese Academy of Sciences Beijing100049 China
In this article, the influence of Forming Gas Annealing (FGA) on the Positive Bias Temperature Instability (PBTI) characteristics of n-vertical C-shaped-channel nanosheet FET (n-VCNFET) is studied. The experimental re... 详细信息
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Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors
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Chinese Physics B 2012年 第5期21卷 669-674页
作者: 葛霁 刘洪刚 苏永波 曹玉雄 金智 Key Laboratory of Microelectronics Device&Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences
A physical model for scaling and optimizing InGaAs/InP double heterojunction bipolar transistors(DHBTs) based on hydrodynamic simulation is *** model is based on the hydrodynamic equation,which can accurately descri... 详细信息
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The physical process analysis of the capacitance-voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors
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Chinese Physics B 2010年 第9期19卷 536-542页
作者: 王鑫华 赵妙 刘新宇 蒲颜 郑英奎 魏珂 Key Laboratory of Microelectronics Device&Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences
This paper deduces the expression of the Schottky contact capacitance of AlGaN/A1N/GaN high electron mobility transistors (HEMTs), which will help to understand the electron depleting process. Some material paramete... 详细信息
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Co-simulation and optimization of constant temperature circuit for thermistor-based MEMS vacuum sensors
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IEEE Sensors Journal 2025年
作者: Li, Yixuan Fu, Jianyu Zhou, Zaifa Lv, Yutian Wan, Neng Chen, Dapeng Southeast University Key Laboratory of MEMS of the Ministry of Education Nanjing210096 China Chinese Academy of Sciences Key Laboratory of Microelectronic Device and Integrated Technology Institute of Microelectronics Beijing100029 China
Thermistor-based microelectromechanical system (MEMS) vacuum sensors are widely used for vacuum monitoring. It is usually operated in constant temperature (CT) mode because this mode is more suited for rough vacuum re... 详细信息
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Modeling, Simulation and Analysis of Thermal Resistance in Multi-finger AlGaN/GaN HEMTs on SiC Substrates
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Chinese Physics Letters 2012年 第8期29卷 279-283页
作者: WANG Jian-Hui WANG Xin-Hua PANG Lei CHEN Xiao-Juan LIU Xin-Yu Key Laboratory of Microelectronics Device&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029
The effects of varying layout geometries and various thermal boundary resistances(TBRs)on the thermal resistance of multi-finger AlGaN/GaN HEMTs are thoroughly investigated using a combination of a two-dimensional ele... 详细信息
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Determination of Channel Temperature in AlGaN/GaN HEMTs by Pulsed I–V Characteristics
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Chinese Physics Letters 2012年 第8期29卷 213-216页
作者: WANG Jian-Hui WANG Xin-Hua PANG Lei CHEN Xiao-Juan JIN Zhi LIU Xin-Yu Key Laboratory of Microelectronics Device&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029
Electrical determination of the channel temperature used for AlGaN/GaN high-electron-mobility transistors(HEMTs)is *** measurement is based on the pulse technique that superposes a detecting pulse on the quiescent bia... 详细信息
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Modulating 3D memristor synapse by analog spiking pulses for bioinspired neuromorphic computing
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Science China(Physics,Mechanics & Astronomy) 2018年 第8期61卷 75-81页
作者: Qi Liu XuMeng Zhang Qing LUO XiaoLong Zhao HangBing Lv ShiBing Long Ming Liu Key Laboratory of Microelectronics Device&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China
Memristor based artificial synapses have demonstrated great potential for bioinspired neuromorphic computing in recent years. To emulate synaptic fimctions, such as short-term plasticity and long-term potentiation/dep... 详细信息
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Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transistors
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Chinese Physics B 2011年 第9期20卷 396-402页
作者: 蒲颜 庞磊 陈晓娟 袁婷婷 罗卫军 刘新宇 Key Laboratory of Microelectronics Device & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences
The current voltage (IV) characteristics are greatly influenced by the dispersion effects in A1GaN/CaN high electron mobility transistors. The direct current (DC) IV and pulsed IV measurements are performed to giv... 详细信息
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Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT
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Journal of Semiconductors 2010年 第10期31卷 24-27页
作者: 蒲颜 王亮 袁婷婷 欧阳思华 庞磊 刘果果 罗卫军 刘新宇 Key Laboratory of Microelectronics Device & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences
The method of multi-bias capacitance voltage measurement is presented. The physical meaning of gate-source and gate-drain capacitances in AlGaN/GaN HEMT and the variations in them with different bias conditions are di... 详细信息
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An 8 GHz high power AlGaN/GaN HEMT VCO
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Journal of Semiconductors 2010年 第7期31卷 61-64页
作者: 陈慧芳 王显泰 陈晓娟 罗卫军 刘新宇 Key Laboratory of Microelectronics Device & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences
A high power X-band hybrid microwave integrated voltage controlled oscillator(VCO) based on Al-GaN /GaN HEMT is *** oscillator design utilizes a common-gate negative resistance structure with open and short-circuit ... 详细信息
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