检索结果-内蒙古大学图书馆

Improved positive bias temperature instability of n-type vertical C-shaped-channel nanosheet FET by forming gas annealing

引用

Microelectronic Engineering 2025年 299卷

作者： Shi, Yunfei Jiang, Songyi Yang, Hong Zhang, Yongkui Zhou, Longda Ji, Zhigang Liu, Qianqian Wang, Qi Zhu, Huilong Luo, Jun Wang, Wenwu Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics Chinese Academy of Science Beijing100029 China National Key Laboratory of Science and Technology on Micro/Nano Fabrication School of Microelectronics Shanghai Jiaotong University Shanghai200240 China Microelectronics Institute University of Chinese Academy of Sciences Beijing100049 China

In this article, the influence of Forming Gas Annealing (FGA) on the Positive Bias Temperature Instability (PBTI) characteristics of n-vertical C-shaped-channel nanosheet FET (n-VCNFET) is studied. The experimental results show that the extra FGA can significantly suppress both the initial and generated interface traps in PBTI. Moreover, in ultra-fast PBTI the pre-existing trap and total trap of VCNFET due to FGA decreases by 35 % and 31 %, respectively. The energy level of the oxide trap under PBTI and recovery doesn't change, in other words, the FGA induces the oxide trap density of the devices to decrease by 36 % at 125 °C and 1.4 V VOV. The optimization effect of FGA annealing has been further confirmed from the perspective of trap generation. It provides a guideline for the PBTI improvement of VCNFET in trap scopes. © 2025 Elsevier B.V.

关键词： Nanosheets

来源：评论

学校读者我要写书评

暂无评论

Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors

引用

Chinese Physics B 2012年第5期21卷 669-674页

作者：葛霁刘洪刚苏永波曹玉雄金智 Key Laboratory of Microelectronics Device&Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

A physical model for scaling and optimizing InGaAs/InP double heterojunction bipolar transistors（DHBTs） based on hydrodynamic simulation is *** model is based on the hydrodynamic equation,which can accurately describe non-equilibrium conditions such as quasi-ballistic transport in the thin base and the velocity overshoot effect in the depleted *** addition,the model accounts for several physical effects such as bandgap narrowing,variable effective mass,and doping-dependent mobility at high *** agreement between the measured and simulated values of cutoff frequency,f t,and maximum oscillation frequency,f max,are achieved for lateral and vertical device *** is shown that the model in this paper is appropriate for downscaling and designing InGaAs/InP DHBTs.

关键词： InGaAs/InP double heterojunction bipolar transistors hydrodynamic simulation lateraland vertical scalable model

来源：评论

学校读者我要写书评

暂无评论

The physical process analysis of the capacitance-voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors

引用

Chinese Physics B 2010年第9期19卷 536-542页

作者：王鑫华赵妙刘新宇蒲颜郑英奎魏珂 Key Laboratory of Microelectronics Device&Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences

This paper deduces the expression of the Schottky contact capacitance of AlGaN/A1N/GaN high electron mobility transistors （HEMTs）, which will help to understand the electron depleting process. Some material parameters related with capacitance-voltage profiling are given in the expression. Detailed analysis of the forward-biased capacitance has been carried on. The gate capacitance of undoped AlGaN/AlN/GaN HEMT will fall under forward bias. If a rising profile is obviously observed, the donor-like impurity or trap is possibly introduced in the barrier.

关键词： AlGaN/AlN/GaN HEMT capacitance-voltage characteristics trap

来源：评论

学校读者我要写书评

暂无评论

Co-simulation and optimization of constant temperature circuit for thermistor-based MEMS vacuum sensors

引用

IEEE Sensors Journal 2025年

作者： Li, Yixuan Fu, Jianyu Zhou, Zaifa Lv, Yutian Wan, Neng Chen, Dapeng Southeast University Key Laboratory of MEMS of the Ministry of Education Nanjing210096 China Chinese Academy of Sciences Key Laboratory of Microelectronic Device and Integrated Technology Institute of Microelectronics Beijing100029 China

Thermistor-based microelectromechanical system (MEMS) vacuum sensors are widely used for vacuum monitoring. It is usually operated in constant temperature (CT) mode because this mode is more suited for rough vacuum regime and could avoid potential damage caused by overheating. However, the CT circuit will suffer from temperature drift, it is necessary to compare and optimize existing temperature drift suppression methods. In this study, the thermal equivalent circuit method is used to set up the macro-model of thermistor-based MEMS vacuum sensors;the co-simulation with three CT circuits is carried out and compared using Advanced Design System software;and an optimized temperature drift suppression CT circuit is designed. Experiment results got by the optimized temperature drift suppression CT circuit show that the average error between simulation and experiment in response voltage for the vacuum pressure range of 3.75×10-3 to more than 1000 Torr is 3.003 %, and the response voltage at atmospheric pressure and at 3.75×10-3 Torr are separately ±0.694 % and ±2.949 % when the ambient temperature ranges from -20 °C to 80 °C. © 2001-2012 IEEE.

关键词： Macros

来源：评论

学校读者我要写书评

暂无评论

Modeling, Simulation and Analysis of Thermal Resistance in Multi-finger AlGaN/GaN HEMTs on SiC Substrates

引用

Chinese Physics Letters 2012年第8期29卷 279-283页

作者： WANG Jian-Hui WANG Xin-Hua PANG Lei CHEN Xiao-Juan LIU Xin-Yu Key Laboratory of Microelectronics Device&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029

The effects of varying layout geometries and various thermal boundary resistances(TBRs)on the thermal resistance of multi-finger AlGaN/GaN HEMTs are thoroughly investigated using a combination of a two-dimensional electro-thermal model coupled with the three-dimensional thermal *** measurement using micro-Raman thermography is performed to verify and enhance the accuracy of the thermal *** results indicate that thermal resistance weakly depends on the layout design because of the high thermal conductivity of ***,the analysis reveals that optimizing the TBR of the device could efficiently reduce the thermal resistance since TBR takes a significant proportion of the total thermal resistance.

关键词： AlGaN/GaN HEMTs Simulation

来源：评论

学校读者我要写书评

暂无评论

Determination of Channel Temperature in AlGaN/GaN HEMTs by Pulsed I–V Characteristics

引用

Chinese Physics Letters 2012年第8期29卷 213-216页

作者： WANG Jian-Hui WANG Xin-Hua PANG Lei CHEN Xiao-Juan JIN Zhi LIU Xin-Yu Key Laboratory of Microelectronics Device&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029

Electrical determination of the channel temperature used for AlGaN/GaN high-electron-mobility transistors(HEMTs)is *** measurement is based on the pulse technique that superposes a detecting pulse on the quiescent bias to acquire the electrical response under various thermal *** experiments and electro-thermal simulations manifest that the duration of the pulse used has a fairly slight influence in the measured ***,noticeable variance of thermal resistance at different gate biases is reported and the thermal resistance as a function of gate voltage decreases from 18.6 to 12.3℃·mm/W as the gate bias increases from-1 V to 2 V under low power density condition.

关键词： AlGaN/GaN HEMTs pulse

来源：评论

学校读者我要写书评

暂无评论

Modulating 3D memristor synapse by analog spiking pulses for bioinspired neuromorphic computing

引用

Science China(Physics,Mechanics & Astronomy) 2018年第8期61卷 75-81页

作者： Qi Liu XuMeng Zhang Qing LUO XiaoLong Zhao HangBing Lv ShiBing Long Ming Liu Key Laboratory of Microelectronics Device&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China

Memristor based artificial synapses have demonstrated great potential for bioinspired neuromorphic computing in recent years. To emulate synaptic fimctions, such as short-term plasticity and long-term potentiation/depression, square pulses or combined complex pulse groups are applied on the device. However, in biological neuron systems, the action potentials are analog pulses with similar amplitudes. Furthermore, in biological systems, the intensity of the stimulus is coded into the frequency of action potentials to modulate the weight of synapses. Toward this programming method, we applied a series of analog spiking pulses with same peaks on Ru/TiOJTiN 3D memristor to emulate synaptic functions, such as long-term potentiation/depression and synaptic saturation. Moreover, we demonstrated the conductance change of the device under different stimulus frequencies of analog spiking pulses and described the statistical results of conductance change value, which shows that the device conductance has a larger change value under a higher spiking frequency with identical pulse number. These results show that the analog spiking pulses can well modulate the memristor-based synaptic weight and have a great potential for bioinspired computing in the future.

关键词： 3D memristor analog spiking pulses artificial synapse spiking frequency

来源：评论

学校读者我要写书评

暂无评论

Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transistors

引用

Chinese Physics B 2011年第9期20卷 396-402页

作者：蒲颜庞磊陈晓娟袁婷婷罗卫军刘新宇 Key Laboratory of Microelectronics Device & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

The current voltage （IV） characteristics are greatly influenced by the dispersion effects in A1GaN/CaN high electron mobility transistors. The direct current （DC） IV and pulsed IV measurements are performed to give a deep investigation into the dispersion effects, which are mainly related to the trap and self-heating mechanisms. The results show that traps play an important role in the kink effects, and high stress can introduce more traps and defects in the device. With the help of the pulsed IV measurements, the trapping effects and self-heating effects can be separated. The impact of time constants on the dispersion effects is also discussed. In order to achieve an accurate static DC IV measurement, the steady state of the bias points must be considered carefully to avoid the dispersion effects.

关键词： dispersion effects pulsed current voltage measurement trap self-heating

来源：评论

学校读者我要写书评

暂无评论

Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT

引用

Journal of Semiconductors 2010年第10期31卷 24-27页

作者：蒲颜王亮袁婷婷欧阳思华庞磊刘果果罗卫军刘新宇 Key Laboratory of Microelectronics Device & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

The method of multi-bias capacitance voltage measurement is presented. The physical meaning of gate-source and gate-drain capacitances in AlGaN/GaN HEMT and the variations in them with different bias conditions are discussed. A capacitance model is proposed to reflect the behaviors of the gate-source and gate-drain capacitances, which shows a good agreement with the measured capacitances, and the power performance obtains good results compared with the measured data from the capacitance model.

关键词： AlGaN/GaN HEMT multi-bias CV curves non-linear CV model

来源：评论

学校读者我要写书评

暂无评论

An 8 GHz high power AlGaN/GaN HEMT VCO

引用

Journal of Semiconductors 2010年第7期31卷 61-64页

作者：陈慧芳王显泰陈晓娟罗卫军刘新宇 Key Laboratory of Microelectronics Device & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

A high power X-band hybrid microwave integrated voltage controlled oscillator（VCO） based on Al-GaN /GaN HEMT is *** oscillator design utilizes a common-gate negative resistance structure with open and short-circuit stub microstrip lines as the main resonator for a high Q *** VCO operating at 20 V drain bias and-1.9 V gate bias exhibits an output power of 28 dBm at the center frequency of 8.15 GHz with an efficiency of 21%.Phase noise is estimated to be -85 dBc/Hz at 100 kHz offset and -128 dBc/Hz at 1 MHz *** tuning range is more than 50 *** dominating effect of GaN HEMT＇s flicker noise on oscillator phase noise performance has also been *** measured results show great promise for AlGaN/GaN HEMT technology to be used in high power and low phase noise microwave source applications.

关键词： AlGaN/GaN HEMT negative resistance VCO high power phase noise flicker noise

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：