检索结果-内蒙古大学图书馆

Frequency dependence on polarization switching measurement in ferroelectric capacitors

Journal of Semiconductors 2022年第1期43卷 90-94页

作者： Zhaomeng Gao Shuxian Lyu Hangbing Lyu Key Laboratory of Microelectronics Device&Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China

Ferroelectric hysteresis loop measurement under high driving frequency generally faces great *** factors in testing circuits such as leakage current and RC delay could result in abnormal hysteresis loops with erroneous rem-nant polarization(P_(r))and coercive field(E_(c)).In this study,positive-up-negative-down(PUND)measurement under a wide fre-quency range was performed on a 10-nm thick Hf_(0.5)Zr_(0.5)O_(2) ferroelectric *** analysis on the leakage current and RC delay was conducted as the polarization switching occurs in the FE *** considering the time lag caused by RC delay,reasonable calibration of current response over the voltage pulse stimulus was employed in the integral of polarization current over *** such a method,rational P-V loops measured at high frequencies(>1 MHz)was successfully *** work provides a comprehensive understanding on the effect of parasitic factors on the polarization switching behavior of FE films.

关键词： PUND measurement HfO_(2)-based ferroelectric RC delay

来源：评论

学校读者我要写书评

暂无评论

Enhanced electronic and photoelectrical properties of two-dimensional Zn-doped SnS_(2)

引用

Chinese Physics B 2025年第5期34卷 491-496页

作者： Xichen Chuai Peng Yin Jiawei Wang Guanhua Yang Congyan Lu Di Geng Ling Li Can Liu Zhongming Wei Nianduan Lu Laboratory of Microelectronics Device&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China School of Physics Renmin University of ChinaBeijing 100872China

Alloy engineering,with its ability to tune the electronic band structure,is regarded as an effective method for adjusting the electronic and optoelectronic properties of two-dimensional(2D)***,synthesizing metal-site substitution alloys remains challenging due to the low reactivity of metal precursors and the tendency for spatial phase separation during high-temperature ***,we report the preparation of a high-quality metal-site substitution alloy,Zn_(0.167)Sn_(0.833)S_(2),via the chemical vapor transport method,which exhibits excellent photoresponsivity and enhanced electrical transport *** characterization techniques,including Raman spectroscopy,x-ray photoelectron spectroscopy(XPS),and electron microscopy,unambiguously confirm the uniform Zn substitution in the as-prepared Zn_(0.167)Sn_(0.833)S_(2) ***,the photodetector based on the Zn_(0.167)Sn_(0.833)S_(2) alloy demonstrated a high on/off ratio of 51 under white light,a wide spectral response range from 350 nm to 900 nm,and a broad dynamic power range of 80 dB under 638-nm *** terms of transport properties,field-effect transistors(FETs)based on Zn_(0.167)Sn_(0.833)S_(2) achieved a carrier mobility of 6.5 cm^(2)·V^(-1)·s^(-1),which is six times higher than that of SnS_(2).This alloy semiconductor showcases significantly enhanced electronic and optoelectronic properties,offering great potential for the development of high-resolution photodetection technologies.

关键词： alloy engineering metal-site substitution photodetector field-effect transistors

来源：评论

学校读者我要写书评

暂无评论

Improved performance of MoS_(2)FET by in situ NH_(3)doping in ALD Al_(2)O_(3)dielectric

引用

Chinese Physics B 2022年第7期31卷 560-564页

作者： Xiaoting Sun Yadong Zhang Kunpeng Jia Guoliang Tian Jiahan Yu Jinjuan Xiang Ruixia Yang Zhenhua Wu Huaxiang Yin School of Information Engineering Hebei University of TechnologyTianjin 300401China Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China

Since defects such as traps and oxygen vacancies exist in dielectrics,it is difficult to fabricate a high-performance MoS_(2)field-effect transistor(FET)using atomic layer deposition(ALD)Al_(2)O_(3)as the gate dielectric *** this paper,NH_(3)in situ doping,a process treatment approach during ALD growth of Al_(2)O_(3),is used to decrease these defects for better device ***_(2)FET has been well fabricated with this technique and the effect of different NH_(3)in situ doping sequences in the growth cycle has been investigated in *** with counterparts,those devices with NH_(3)in situ doping demonstrate obvious performance enhancements:Ion/Ioff is improved by one order of magnitude,from 1.33×10^(5)to 3.56×10^(6),the threshold voltage shifts from-0.74 V to-0.12 V and a small subthreshold swing of 105 m V/dec is *** improved MoS_(2)FET performance is attributed to nitrogen doping by the introduction of NH_(3)during the Al_(2)O_(3)ALD growth process,which leads to a reduction in the surface roughness of the dielectric layer and the repair of oxygen vacancies in the Al_(2)O_(3)***,the MoS_(2)FET processed by in situ NH_(3)doping after the Al and O precursor filling cycles demonstrates the best performance;this may be because the final NH_(3)doping after film growth restores more oxygen vacancies to screen more charge scattering in the MoS_(2)*** reported method provides a promising way to reduce charge scattering in carrier transport for high-performance MoS_(2)devices.

关键词： MoS_(2) Al_(2)O_(3)dielectric NH_(3)in-situ doping oxygen vacancy

来源：评论

学校读者我要写书评

暂无评论

Enhancement of fMAX of InP-based HEMTs by double-recessed offset gate process

引用

Chinese Physics B 2022年第5期31卷 743-748页

作者： Bo Wang Peng Ding Rui-Ze Feng Shu-Rui Cao Hao-Miao Wei Tong Liu Xiao-Yu Liu Hai-Ou Li Zhi Jin Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic TechnologyGuilin 541004China High-Frequency High-Voltage Device and Integrated Circuits Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

A double-recessed offset gate process technology for In P-based high electron mobility transistors(HEMTs)has been developed in this ***-recessed and double-recessed HEMTs with different gate offsets have been fabricated and *** with single-recessed devices,the maximum drain-source current(I_(D,max))and maximum extrinsic transconductance(g_(m,max))of double-recessed devices decreased due to the increase in series ***,in terms of RF performance,double-recessed HEMTs achieved higher maximum oscillation frequency(f_(MAX))by reducing drain output conductance(g_(m,max))and drain to gate capacitance(C_gd).In addition,further improvement of fMAXwas observed by adjusting the gate offset of double-recessed *** can be explained by suppressing the ratio of C_(gd)to source to gate capacitance(C_gd)by extending drain-side recess length(Lrd).Compared with the single-recessed HEMTs,the f;of double-recessed offset gate HEMTs was increased by about 20%.

关键词： InP HEMT maximum oscillation frequency(fMAX) double-recess offset gate

来源：评论

学校读者我要写书评

暂无评论

Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology

引用

Chinese Physics B 2022年第1期31卷 658-663页

作者： Yan-Fu Wang Bo Wang Rui-Ze Feng Zhi-Hang Tong Tong Liu Peng Ding Yong-Bo Su Jing-Tao Zhou Feng Yang Wu-Chang Ding Zhi Jin University of Chinese Academic of Sciences Beijing 100029China High-Frequency High-Voltage Device and Integrated Circuits Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic TechnologyGuilin 541004China

Heterogeneous integrated InP high electron mobility transistors(HEMTs)on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene(BCB)bonding *** channel of the new device is In_(0.7)Ga_(0.3)As,and the gate length is 100 nm.A maximum extrinsic transconductance gm,max of 855.5 mS/mm and a maximum drain current of 536.5 mA/mm are *** current gain cutoff frequency is as high as 262 GHz and the maximum oscillation frequency reaches 288 *** addition,a small signal equivalent circuit model of heterogeneous integration of InP HEMTs on quartz wafer is built to characterize device performance.

关键词： heterogeneous integration InP high electron mobility transistor quartz small-signal model

来源：评论

学校读者我要写书评

暂无评论

Impact of gate offset in gate recess on DC and RF performance of InAlAs/InGaAs InP-based HEMTs

引用

Chinese Physics B 2022年第5期31卷 720-724页

作者： Shurui Cao Ruize Feng Bo Wang Tong Liu Peng Ding Zhi Jin High-Frequency High-Voltage Device and Integrated Circuits Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100029China Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic TechnologyGuilin 541004China

A set of 100-nm gate-length In P-based high electron mobility transistors(HEMTs)were designed and fabricated with different gate offsets in gate recess.A novel technology was proposed for independent definition of gate recess and T-shaped gate by electron beam *** and RF measurement was *** the gate offset varying from drain side to source side,the maximum drain current(I_(ds,max))and transconductance(g_(m,max))*** the meantime,fTdecreased while f;increased,and the highest fmax of 1096 GHz was *** can be explained by the increase of gate-source capacitance and the decrease of gate-drain capacitance and source *** conductance was also suppressed by gate offset toward source *** provides simple and flexible device parameter selection for HEMTs of different usages.

关键词： InP HEMT InGaAs/InAlAs cut-off frequency(fT) maximum oscillation frequency(fmax) asymmetric gate recess

来源：评论

学校读者我要写书评

暂无评论

Impact of symmetric gate-recess length on the DC and RF characteristics of InP HEMTs

引用

Chinese Physics B 2022年第1期31卷 675-679页

作者： Ruize Feng Bo Wang Shurui Cao Tong Liu Yongbo Su Wuchang Ding Peng Ding Zhi Jin High-Frequency High-Voltage Device and Integrated Circuits Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100029China Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic TechnologyGuilin 541004China

We fabricated a set of symmetric gate-recess devices with gate length of 70 *** kept the source-to-drain spacing(L_(SD))unchanged,and obtained a group of devices with gate-recess length(L_(recess))from 0.4µm to 0.8µm through process *** order to suppress the influence of the kink effect,we have done SiN_(X) passivation *** maximum saturation current density(ID_(max))and maximum transconductance(g_(m,max))increase as L_(recess) decreases to 0.4µ*** this time,the device shows ID_(max)=749.6 mA/mm at V_(GS)=0.2 V,V_(DS)=1.5 V,and g_(m,max)=1111 mS/mm at V_(GS)=−0.35 V,V_(DS)=1.5 ***,as L_(recess) increases,it causes parasitic capacitance C_(gd) and g_(d) to decrease,making f_(max) drastically *** L_(recess)=0.8µm,the device shows f_(T)=188 GHz and f_(max)=1112 GHz.

关键词： InP HEMT InGaAs/InAlAs current gain cut-off frequency(fT) maximum oscillation frequency(f_(max)) gate-recess length(L_(recess))

来源：评论

学校读者我要写书评

暂无评论

Long-term and short-term plasticity independently mimicked in highly reliable Ru-doped Ge_(2)Sb_(2)Te_(5) electronic synapses

引用

InfoMat 2024年第8期6卷 85-96页

作者： Qiang Wang Yachuan Wang Yankun Wang Luyue Jiang Jinyan Zhao Zhitang Song Jinshun Bi Libo Zhao Zhuangde Jiang Jutta Schwarzkopf Shengli Wu Bin Zhang Wei Ren Sannian Song Gang Niu State Key Laboratory for Manufacturing Systems Engineering Electronic Materials Research LaboratoryKey Laboratory of the Ministry of Education&International Center for Dielectric ResearchSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China School of Integrated Circuits Peking UniversityBeijingthe People's Republic of China Beijing Microelectronics Technology Institute Beijingthe People's Republic of China National Key Laboratory of Human-Machine Hybrid Augmented Intelligence National Engineering Research Center for Visual information and Applicationsand School of SoftwareXi'an Jiaotong UniversityXi'anthe People's Republic of China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghaithe People's Republic of China Key Laboratory of Microelectronics Device and Integrated Technology The Institute of Microelectronics of Chinese Academy of SciencesBeijingthe People's Republic of China University of Chinese Academy of Sciences Beijingthe People's Republic of China The State Key Laboratory for Manufacturing Systems Engineering&The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong UniversityXi'anthe People's Republic of China Leibniz-Institut für Kristallzüchtung Max-Born-Straße 2BerlinGermany Key Laboratory of Physical Electronics and Devices Ministry of EducationSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong UniversityXi'anthe People's Republic of China

In order to fulfill the complex cognitive behaviors in neuromorphic systems with reduced peripheral circuits,the reliable electronic synapses mimicked by single device that achieves diverse long-term and short-term plasticity are *** change random access memory(PCRAM)is of great potential for artificial synapses,which faces,however,difficulty to realize short-term plasticity due to the long-lasting resistance *** work reports the ruthenium-doped Ge_(2)Sb_(2)Te_(5)(RuGST)based PCRAM,demonstrating a series of synaptic behaviors of short-term potentiation,pair-pulse facilitation,longterm depression,and short-term plasticity in the same single *** optimized RuGST electronic synapse with the high transformation temperature of hexagonal phase>380C,the outstanding endurance>108 cycles,the low resistance drift factor of 0.092,as well as the extremely high linearity with correlation coefficients of 0.999 and 0.976 in parts of potentiation and *** investigations also go insight to mechanisms of Ru doping according to thorough microstructure characterization,revealing that Ru dopant is able to enter GST lattices thus changing and stabilizing atomic arrangement of *** leads to the short-term plasticity realized by RuGST ***,the proposed RuGST electronic synapses performs a high accuracy of94.1%in a task of image recognition of CIFAR-100 database using ResNet *** work promotes the development of PCRAM platforms for large-scale neuromorphic systems.

关键词： electronic synapses neuromorphic computing PCRAM Ru-doped Ge_(2)Sb_(2)Te_(5)

来源：评论

学校读者我要写书评

暂无评论

Distribution of HCD-induced Interface Trap in nano-scale Si n-FinFET due to Corner Effect

Distribution of HCD-induced Interface Trap in nano-scale Si ...

引用

International Symposium on Physical & Failure Analysis of integrated Circuits

作者： Mingvang Sun Ruixi Yu Yunfei Shil Hong Yang Qianqian Liu Bo Tang Xiaobin He Jianfeng Gao Junfeng Li Huaxiang Yin Jun Luo Wenwu Wang Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Beijing China Microelectronics Institute University of Chinese Academy of Sciences Beijing China

ISBN: (数字)9798350360608

ISBN: (纸本)9798350360615

In this paper, in order to understand the interface trap distribution along channel induced by Hot Carrier Degradation (HCD) of nano-scale Si n-FinFETs, both Bias Temperature Instability (BTI) and HCD of n-FinFETs are compared. Under BTI stress, the short-channel n-FinFET is influenced by both corner passivation effects and a larger corner electric field. Interface traps exhibit a lower density in the short-channel device at lower stress voltages, but surpass it at higher stress voltages. During HCD stress, the degradation process in short-channel devices is predominantly dominated by a larger lateral electric field, resulting in significantly fewer interface traps. Moreover, interface traps in short-channel devices no longer accumulate near the drain side, as observed in long-channel devices, but extend towards the source, distributed across the entire channel.

关键词： Degradation integrated circuits Temperature distribution Logic gates Silicon Nanoscale devices Electric fields integrated circuit reliability Stress Passivation

来源：评论

学校读者我要写书评

暂无评论

Enhanced Robustness of Interfacial Layer (IL) for PBTI Improvement of HfO2/TiN RMG Stacks by Low-Temperature Oxygen Plasma Treatment

Enhanced Robustness of Interfacial Layer (IL) for PBTI Impro...

引用

International Symposium on Physical & Failure Analysis of integrated Circuits

作者： Songyi Jiang Qianqian Liu Mingyang Sun Hong Yang Junjie Li Bo Tang Xiaobin He Shuai Yang Jun Luo Wenwu Wang Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics Chinese Academy of Science Beijing China Microelectronics Institute University of Chinese Academy of Sciences Beijing China

ISBN: (数字)9798350360608

ISBN: (纸本)9798350360615

In this paper, in order to enhance the quality of SiO 2 chemical interfacial layer (IL) and get better PBTI characteristics of devices with HfO 2 /TiN stacks, the atom oxygen (O*) plasma treatment after IL growth is applied at low temperature (250°C) for 10 seconds. The experimental results show that equivalent oxide thickness (EOT) is increased about 0.12nm by O* plasma treatment, which is due to the SiO 2 IL re-growth according to the TEM image and relationship between leakage (LKG) and EOT. The initial interface trap of device decreases about 60%, while the generated interface trap in PBTI at 125°C is obviously decreased, which is due to the increase of hydrogen in the interface between IL and silicon as shown in Secondary ion mass spectrometry (SIMS) data. The stress-induced leakage current (SILC) shows that the energy level of generated oxide trap in HfO 2 by O* plasma treatment shifts to Ev of silicon about 0.04eV due to the nitrogen passivation in the oxide. This work gives a clue to improve the IL quality and PBTI using low-temperature thermal budget.

关键词： Silicon compounds Atomic layer deposition Hydrogen Voltage Silicon Plasmas Hafnium compounds

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：