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Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors

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Chinese Physics B 2012年第5期21卷 669-674页

作者：葛霁刘洪刚苏永波曹玉雄金智 Key Laboratory of Microelectronics Device&Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

A physical model for scaling and optimizing InGaAs/InP double heterojunction bipolar transistors（DHBTs） based on hydrodynamic simulation is *** model is based on the hydrodynamic equation,which can accurately describe non-equilibrium conditions such as quasi-ballistic transport in the thin base and the velocity overshoot effect in the depleted *** addition,the model accounts for several physical effects such as bandgap narrowing,variable effective mass,and doping-dependent mobility at high *** agreement between the measured and simulated values of cutoff frequency,f t,and maximum oscillation frequency,f max,are achieved for lateral and vertical device *** is shown that the model in this paper is appropriate for downscaling and designing InGaAs/InP DHBTs.

关键词： InGaAs/InP double heterojunction bipolar transistors hydrodynamic simulation lateraland vertical scalable model

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Modeling, Simulation and Analysis of Thermal Resistance in Multi-finger AlGaN/GaN HEMTs on SiC Substrates

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Chinese Physics Letters 2012年第8期29卷 279-283页

作者： WANG Jian-Hui WANG Xin-Hua PANG Lei CHEN Xiao-Juan LIU Xin-Yu Key Laboratory of Microelectronics Device&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029

The effects of varying layout geometries and various thermal boundary resistances(TBRs)on the thermal resistance of multi-finger AlGaN/GaN HEMTs are thoroughly investigated using a combination of a two-dimensional electro-thermal model coupled with the three-dimensional thermal *** measurement using micro-Raman thermography is performed to verify and enhance the accuracy of the thermal *** results indicate that thermal resistance weakly depends on the layout design because of the high thermal conductivity of ***,the analysis reveals that optimizing the TBR of the device could efficiently reduce the thermal resistance since TBR takes a significant proportion of the total thermal resistance.

关键词： AlGaN/GaN HEMTs Simulation

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Determination of Channel Temperature in AlGaN/GaN HEMTs by Pulsed I–V Characteristics

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Chinese Physics Letters 2012年第8期29卷 213-216页

作者： WANG Jian-Hui WANG Xin-Hua PANG Lei CHEN Xiao-Juan JIN Zhi LIU Xin-Yu Key Laboratory of Microelectronics Device&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029

Electrical determination of the channel temperature used for AlGaN/GaN high-electron-mobility transistors(HEMTs)is *** measurement is based on the pulse technique that superposes a detecting pulse on the quiescent bias to acquire the electrical response under various thermal *** experiments and electro-thermal simulations manifest that the duration of the pulse used has a fairly slight influence in the measured ***,noticeable variance of thermal resistance at different gate biases is reported and the thermal resistance as a function of gate voltage decreases from 18.6 to 12.3℃·mm/W as the gate bias increases from-1 V to 2 V under low power density condition.

关键词： AlGaN/GaN HEMTs pulse

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Electric field dependent drain current drift of AlGaN/GaN HEMT

Electric field dependent drain current drift of AlGaN/GaN HE...

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IEEE International Workshop integrated Reliability

作者： Xinhua Wang Yuanqi Jiang Sen Huang Yingkui Zheng Ke Wei Xiaojuan Chen Weijun Luo Guoguo Liu Lei Pang Tingting Yuan Xinyu Liu Key Laboratory of Microelectronics Device & Integrated Technology Chinese Academy of Sciences Beijing People's Republic of China

We have performed constant voltage stress (CVS) tests on GaN-on-SiC HEMT to investigate the drain current drift. Two kinds of current drift behavior are observed in CVS. The off-state drain voltage step stress tests are carried out to confirm the electric field dependent current drift. A critical voltage for drain current recovery is observed. We suggest that the recovery of drain current is due to holes generation near the heterojunction interface or the detrapping of acceptors in the barrier layer. The drain current drift is balanced by the current degradation and recovery mechanism.

关键词： Stress Gallium nitride HEMTs Degradation Aluminum gallium nitride integrated circuit reliability

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Improvement of breakdown characteristics of an A1GaN/GaN HEMT with a U-type gate foot for millimeter-wave power application

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Chinese Physics B 2012年第12期21卷 531-537页

作者：孔欣魏珂刘果果刘新宇 Microwave Devices and Integrated Circuits Department Key Laboratory of Microelectronics Device and Integrated TechnologyInstitute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

In this study, the physics-based device simulation tool Silvaco ATLAS is used to characterize the electrical properties of an AlGaN/GaN high electron mobility transistor （HEMT） with a U-type gate foot. The U-gate AlGaN/GaN HEMT mainly features a gradually changed sidewall angle, which effectively mitigates the electric field in the channel, thus obtaining enhanced off-state breakdown characteristics. At the same time, only a small additional gate capacitance and decreased gate resistance ensure excellent RF characteristics for the U-gate device. U-gate AlGaN/GaN HEMTs are feasible through adjusting the etching conditions of an inductively coupled plasma system, without introducing any extra process steps. The simulation results are confirmed by experimental measurements. These features indicate that U-gate A1GaN/GaN HEMTs might be promising candidates for use in millimeter-wave power applications.

关键词： AlGaN/GaN HEMT breakdown characteristics millimeter-wave U-type gate foot

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Gate-Recessed AlGaN/GaN MOSHEMTs with the Maximum Oscillation Frequency Exceeding 120 GHz on Sapphire Substrates

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Chinese Physics Letters 2012年第7期29卷 280-283页

作者： KONG Xin WEI Ke LIU Guo-Guo LIU Xin-Yu Microwave Devices and Integrated Circuits Department Key Laboratory of Microelectronics Device and Integrated TechnologyInstitute of MicroelectronicsChinese Academy of SciencesBeijing 100029

Gate-recessed AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on sapphire substrates are *** devices with a gate length of 160nm and a gate periphery of 2 × 75μmexhibit two orders of magnitude reduction in gate leakage current and enhanced off-state breakdown characteristics,compared with conventional ***,the extrinsic transconductance of an MOSHEMT is 237.2mS/mm,only 7% lower than that of Schottky-gate *** extrinsic current gain cutoff frequency fT of 65 GHz and a maximum oscillation frequency fmax of 123 GHz are deduced from rf small signal *** high fmax demonstrates that gate-recessed MOSHEMTs are of great potential in millimeter wave frequencies.

关键词： AlGaN/GaN MOSHEMT millimeter

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High voltage degradation of GaN high electron mobility transistors with AlGaN back barrier on SiC substrate

High voltage degradation of GaN high electron mobility trans...

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2012 International Workshop on Microwave and Millimeter Wave Circuits and System technology, MMWCST 2012

作者： Wang, Xinhua Pang, Lei Wang, Jianhui Yuan, Tingting Luo, Weijun Chen, Xiaojuan Liu, Xinyu Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing Chaoyang 100029 China

ISBN: (纸本)9781467318938

We have stressed GaN High Electron Mobility Transistors (HEMTs) with AlGaN back barrier on SiC substrate at high voltages at normal and high temperatures. A pattern of device degradation differs from what occurred in reported GaN-on-SiC HEMTs and GaN-on-Si HEMTs. The recoverable degradation of drain current is observed under Vds=0 step stress condition, but no degradation is observed under off-state condition. We attribute the results to electron injection into the back quantum well, other than electron trapping. Raman scattering indicates planar strain is greatly enhanced under Vds=0V condition, which is likely to assist electron in tunneling the back barrier. © 2012 IEEE.

关键词： High electron mobility transistors

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Dislocation induced nonuniform surface morphology of Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN HEMTs

Dislocation induced nonuniform surface morphology of Ti/Al/N...

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International Workshop on Microwave and Millimeter Wave Circuits and System technology (MMWCST)

作者： Xin Kong Ke Wei Guoguo Liu Jianhui Wang Xinyu Liu Microwave Devices and Integrated Circuits Department Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

In this study, Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors was fabricated and demonstrated distribution of bright and dark areas on the surface. Surface element analyses show that it is of great difference in the Ni and Au content between these two kinds of regions. According to transmission electron microscopy and corresponding Electron dispersive x-ray spectroscopy analyses, plenty of Ni was detected in dislocation rich regions while rare Ni was left in dislocation free regions so that Au tended to accumulate in the form of AlAu x binary alloy. The surface nonuniformity presented on the surface should be attributed to the nonuniform interfacial reactions resulted from the dislocations.

关键词： Aluminum gallium nitride Gallium nitride Surface morphology Nickel Gold Ohmic contacts

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Three-dimensional modeling of AlGaN/GaN HEMT including electro-thermal coupling effects

Three-dimensional modeling of AlGaN/GaN HEMT including elect...

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International Workshop on Microwave and Millimeter Wave Circuits and System technology (MMWCST)

作者： Jianhui Wang Xinhua Wang Lei Pang Xiaojuan Chen Xin Kong Xinyu Liu Microwave Devices and Integrated Circuits Department Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

Thermal performance of AlGaN/GaN HEMT is a critical issue during the design stage, since it significantly affect the lifetime of the device. This paper introduces a three-dimensional modeling technique including electro-thermal coupling effects for investing the thermal characteristic of the AlGaN/GaN HEMT. The method achieves a good balance between simulation time and accuracy through iterative calculation between the 2D and 3D model.

关键词： Gallium nitride Solid modeling Aluminum gallium nitride HEMTs Temperature measurement Logic gates Silicon carbide

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A wide dynamic range transimpedance amplifier with high gain-bandwidth product for 10 Gb/s optical links

A wide dynamic range transimpedance amplifier with high gain...

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International Workshop on Microwave and Millimeter Wave Circuits and System technology (MMWCST)

作者： Fan Jiang Jianwu Chen Danyu Wu Jin Wu Zhi Jin Xinyu Liu Microwave Devices and Integrated Circuits Department Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

This paper presents the design method and implementation of a wide dynamic range transimpedance amplifier (TIA) with high gain-bandwidth product (GBW) based on 1μm GaAs process of WIN company. The wide dynamic range results from the utilization of a parallel feedback structure that divides the input current when it is large. And the high GBW owes to the limiting amplifier (LA) which functions as a gain stage based on a modified Cherry-Hopper amplifier. The proposed TIA achieves a maximum input current of 3.5 mA and a transimpedance of 68.6 dBΩ and a bandwidth of 10.9 GHz.

关键词： Bandwidth Resistors Dynamic range Noise Limiting Gain Optical receivers

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