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Suppression of Bulk Traps in Al2o3 Gate Dielectric and its Effect on Threshold Voltage Instability in Al2o3/Algan/Gan Metal-Oxide-Semiconductor High Electron Mobility Transistors

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SSRN 2023年

作者： Deng, Kexin Huang, Sen Wang, Xinhua Jiang, Qimeng Yin, Haibo Fan, Jie Jing, Guanjun Wei, Ke Zheng, Yingkui Shi, Jingyuan Liu, Xinyu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Bulk trapping and its effects on threshold voltage hysteresis (ΔVTH) in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) are researched through isothermal capture transient spectroscopy. A post deposition annealing (PDA) at 500 ℃ in the O2 ambient is confirmed to be an effective way to reduce the bulk traps in the atomic layer deposited (ALD)-Al2O3 film as it contributes to the suppressed ΔVTH in Al2O3/AlGaN/GaN MOS-HEMTs. Isothermal-mode capacitance deep level transient spectroscopy (C-DLTS) is utilized to investigate the threshold voltage instability in Al2O3/AlGaN/GaN MOS-HEMTs. The evolution of the C-DLTS signals verifies the continual charging of oxide bulk traps in the Al2O3 gate dielectric once the gate bias of the MOS-HEMTs is applied exceeding +3 V, which leads to the degraded ΔVTH as well as subthreshold slopes in transfer characterization. Such traps probably stem from the Al-O-H component in as-deposited Al2O3 layers, as detected by X-ray photoelectron spectroscopy (XPS) analysis. Energy band simulation further illustrates the capture process of the oxide bulk traps, verifying the physical relationship between bulk-trapping and ΔVTH. © 2023, The Authors. All rights reserved.

关键词： Gallium nitride

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Direct Cu-polyimide Bonding Achieved by Surface Activation and Pt-catalyzed Formic Acid Atmosphere

Direct Cu-polyimide Bonding Achieved by Surface Activation a...

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2021 IEEE International Conference on integrated Circuits, Technologies and Applications, ICTA 2021

作者： Meng, Ying Gao, Runhua Wang, Xinhua Chen, Xiaojuan Huang, Sen Wei, Ke Wang, Dahai Mu, Fengwen Liu, Xinyu Chinese Academy of Sciences High-Frequency High-Voltage Device and Integrated Circuits RD Center Institute of Microelectronics Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9781665417471

Recent flexible printed circuit applications of high-frequency wireless communication systems require thicker metal layers on substrates for lower ohmic losses. In this paper, a Cu layer over 50-micron thick was directly generated on the polyimide substrate by heterogeneous bonding method without interlayer. The polyimide was first sputtered a 200 nm-thick Cu layer, and then was activated by oxygen plasma to improve its hydrophilicity and achieve direct adhesion between polyimide and nanoscale Cu deposition, and eventually was bonded with a 50micron-thick Cu foil in a Pt-catalyzed formic acid atmosphere by thermo-compression. The effectiveness of this method was verified by comparing bonding interfaces, shear strength, and fracture modes of bonded samples with and without a Cr interlayer. This method provides a new idea for the integration of heterogeneous materials needed in wearable products and flexible printed circuits. © 2021 IEEE.

关键词： Formic acid

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Nondestructive visualization of graphene on Pt with methylene blue surface modification

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Science China Materials 2022年第10期65卷 2763-2770页

作者： He Kang Yanhui Zhang Yun Wu Shike Hu Jing Li Zhiying Chen Yanping Sui Shuang Wang Sunwen Zhao Runhan Xiao Guanghui Yu Songang Peng Zhi Jin Xinyu Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device InstituteNanjing 210016China Microwave Devices and Integrated Circuits Department Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

Efficient large-scale nondestructive quality assessment of graphene on Pt is essential to the in-depth growth research and practical applications of ***,we present a very simple method for directly observing the domains and defects in graphene on Pt using an ordinary optical *** was achieved by modifying graphene on Pt using methylene blue(MB).Because the chemical activities of graphene and Pt surface differ significantly,the adsorption and reaction of MB on graphene and platinum surface *** can determine the distribution of graphene crystal domains and defects by comparing the colors in the optical *** addition,this characterization method causes no obvious damage to the Pt substrate and ***,it does not affect the recycling of the substrate or the subsequent characterization or application of *** study provides a nondestructive method for measuring the quality of graphene on Pt on a large scale,as well as a reference for the characterization and doping of other two-dimensional materials.

关键词： graphene Pt nondestructive visualization surface modification methylene blue

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Applications of MXenes in human-like sensors and actuators

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Nano Research 2023年第4期16卷 5767-5795页

作者： Jinbo Pang Songang Peng Chongyang Hou Xiao Wang Ting Wang Yu Cao Weijia Zhou Ding Sun Kai Wang Mark H.Rümmeli Gianaurelio Cuniberti Hong Liu Institute for Advanced Interdisciplinary Research(iAIR) Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of ShandongUniversity of JinanJinan 250022China Institute for Materials Science and Max Bergmann Center of Biomaterials Technische Universität DresdenDresden 01069Germany Center for Advancing Electronics Dresden Technische Universität DresdenDresden 01069Germany Dresden Center for Computational Materials Science Technische Universität DresdenDresden 01062Germany Dresden Center for Intelligent Materials(GCL DCIM) Technische Universität DresdenDresden 01062Germany High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Shenzhen Key Laboratory of Nanobiomechanics Shenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen 518055China State Key Laboratory of Biobased Material and Green Papermaking Qilu University of TechnologyShandong Academy of SciencesJinan 250353China School of Bioengineering Qilu University of TechnologyShandong Academy of ScienceJinan 250353China Key Laboratory of Modern Power System Simulation and Control&Renewable Energy Technology(Ministry of Education) Northeast Electric Power UniversityJilin 132012China School of Electrical Engineering Northeast Electric Power UniversityJilin 132012China School of Electrical Engineering Weihai Innovation Research InstituteQingdao UniversityQingdao 266000China School of Electrical and Computer Engineering Jilin Jianzhu UniversityChangchun 130118China Institute for Complex Materials Leibniz Institute for Solid State and Materials Research Dresden(IFW Dresden)20 Helmholtz StrasseDresden 01069Germany College of Energy Soochow Institute for Energy and Materials Innovations Soochow UniversitySuzhou 215006China Key L

Human beings perceive the world through the senses of sight,hearing,smell,taste,touch,space,and *** first five senses are prerequisites for people to *** sensing organs upload information to the nervous systems,including the brain,for interpreting the surrounding ***,the brain sends commands to muscles reflexively to react to stimuli,including light,gas,chemicals,sound,and ***,as an emerging two-dimensional material,has been intensively adopted in the applications of various sensors and *** this review,we update the sensors to mimic five primary senses and actuators for stimulating muscles,which employ MXene-based film,membrane,and composite with other functional ***,a brief introduction is delivered for the structure,properties,and synthesis methods of ***,we feed the readers the recent reports on the MXene-derived image sensors as artificial retinas,gas sensors,chemical biosensors,acoustic devices,and tactile sensors for electronic ***,the actuators of MXene-based composite are ***,future opportunities are given to MXene research based on the requirements of artificial intelligence and humanoid robot,which may induce prospects in accompanying healthcare and biomedical engineering applications.

关键词： MXenes sensors actuators gas sensors biosensors tactile sensors sound sensors artificial retina

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Degradation of SOI SRAMs at 25C Operating Conditions 23

Degradation of SOI SRAMs at 25C Operating Conditions

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23rd IEEE Electronics Packaging technology Conference, EPTC 2021

作者： Wang, K. Gao, J. Zeng, C. Li, B. Zhang, G. Ma, S. Sun, P. Wang, C. Hao, N. Li, J. Liu, H. Zhao, F. Luo, J. Han, Z. Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Silicon Device Technology Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Guangdong Greater Bay Area Institute of Integrated Circuit and System Guangzhou510535 China

ISBN: (纸本)9781665416191

In this paper, a dynamic life evaluation test of 0.35mu {m} PD SOI SRAM is conducted at 250{C} ambient temperatures. Experiments show that the SOI SRAMs can safely operate for more than 600 hours at 250{C}. Analysis of failed devices demonstrates that electro-migration effect and Kirkendall effect may be the direct causes of device degradation. And underlying leakage of the device will greatly accelerate the degradation of the metal interconnect and package, which needs to be improved in future work. © 2021 IEEE.

关键词： Failure analysis

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Highly efficient nonuniform finite difference method for three-dimensional electrically stimulated liquid crystal photonic devices

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Photonics Research 2024年第4期12卷 865-875页

作者： ZHENGHAO GUO MENGJUN LIU ZIJIA CHEN RUIZHI YANG PEIYUN LI HAIXIA DA DONG YUAN GUOFU ZHOU LINGLING SHUI HUAPENG YE Guangdong Provincial Key Laboratory of Optical Information Materials and Technology&Institute of Electronic Paper Displays South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou 510006China SCNU-TUE Joint Lab of Device Integrated Responsive Materials(DIRM) National Center for International Research on Green OptoelectronicsSouth China Normal UniversityGuangzhou 510006China Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices School of Information and Optoelectronic Science and EngineeringSouth China Normal UniversityGuangzhou 510006China Joint Laboratory of Optofluidic Technology and Systems National Center for International Research on Green OptoelectronicsSouth China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou 510006China College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210046China Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province Nanjing 210023China

Liquid crystal(LC)photonic devices have attracted intensive attention in recent decades,due to the merits of tunability,cost-effectiveness,and high ***,the precise and efficient simulation of large-scale three-dimensional electrically stimulated LC photonic devices remains challenging and resource *** we report a straightforward nonuniform finite difference method(NFDM)for efficiently simulating largescale LC photonic devices by employing a spatially nonuniform mesh grid.

关键词： nonuniform crystal finite

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Three-Orders Improvement of Endurance in Hafina Based MFS Capacitor through CF4 Plasma Pre-Treatment

Three-Orders Improvement of Endurance in Hafina Based MFS Ca...

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IEEE Electron devices technology and Manufacturing Conference (EDTM)

作者： Shuxian Lv Yan Wang Zhaomeng Gao Zhiwei Dang Pengfei Jiang Peng Yuan Qing Luo Shengjie Zhao Hangbing Lv University of Chinese Academy of Sciences Beijing China Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China

In hafina ferroelectric based FeFET device, endurance issue is one of the most critical concern. In this work, an effective approach of CF4 plasma pre-treatment on the Si surface before Hf0.5Zr0.5O2 deposition was employed to improve interface quality of metal-ferroelectric-semiconductor (MFS) capacitor, which is the key component of FeFET device. The F plasma pre-treatment was found helpful to reduce the leakage current and increase the breakdown voltage of MFS capacitor. In the sample treated with CF4 plasma for 10 seconds, the endurance property of MFS capacitor was successfully enhanced to 10⁸ cycles, which are 3 orders higher than the non-treated sample. Along with the improvement of endurance, the coercive field was also found increased 20 percent, which is beneficial to increase the memory window (2Ec) of FeFET. The observed phenomenon could be well understood by the improved interface quality and reduced leakage current.

关键词： Plasma properties Performance evaluation Capacitors Silicon Manufacturing Leakage currents FeFETs

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Recess-Patterned Ohmic Contact technology for AlGaN/GaN Heterostructures

Recess-Patterned Ohmic Contact Technology for AlGaN/GaN Hete...

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International Conference on ASIC

作者： Xinyi Tang Nick Tao Yang Jiang Qing Wang Fangzhou Du Hongyu Yu School of Microelectronics Southern University of Science and Technology Shenzhen China Maxscend Microelectronics Company Limited Wuxi China Department of Electrical and Electronic Engineering The University of Hong Kong China Engineering Research Center of Integrated Circuits for Next-Generation Communications Ministry of Education Southern University of Science and Technology Shenzhen China GaN Device Engineering Technology Research Center of Guangdong Southern University of Science and Technology Shenzhen China The Key Laboratory of the Third Generation Semi-Conductor Southern University of Science and Technology Shenzhen China

In this paper, a recess-patterned ohmic contact technology is presented, which shows a promising way to reduce the ohmic contact resistance for AlGaN/GaN heterostructures. The influences of annealing temperature, recessed-pattern size and shape are investigated, respectively. The mean value of ohmic contact resistance (R C ) is 0.345 Ω·mm, which is 33.8% lower than conventional non-recessed metal-stacking scheme. The technology Computer Aided Design (TCAD) simulation results indicate the two-dimensional electron gas (2-DEG) concentration significantly increasing near the edge of recessed-pattern. This effect shortens the distance between ohmic contact metal and 2-DEG, which may effectively contribute to the superior ohmic contact performance.

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Convertible Volatile and non-Volatile Resistive Switching in a Self-Rectifying Pt/TiOx/Ti Memristor

Convertible Volatile and non-Volatile Resistive Switching in...

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IEEE Electron devices technology and Manufacturing Conference (EDTM)

作者： Zuheng Wu Xumeng Zhang Tuo Shi Yongzhou Wang Rui Wang Jian Lu Jinsong Wei Peiwen Zhang Qi Liu University of Chinese Academy of Sciences Beijing China Fudan University Zhejiang Laboratory Hangzhou China Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China

In this work, a multi-functional self-rectifying memristor (Pt/TiOx/Ti) is fabricated. The device shows convertible volatile and non-volatile resistive switching. More importantly, the device has a high rectifying rat... 详细信息

In this work, a multi-functional self-rectifying memristor (Pt/TiO_x/Ti) is fabricated. The device shows convertible volatile and non-volatile resistive switching. More importantly, the device has a high rectifying ratio in both switching modes (~10⁵ for volatile and 10⁶ for non-volatile), which is favorable for high-density 3D vertical integration. The convertible multi-switching behaviors and high self-rectifying ratio in a single memristor provide the flexibility for multi-functional applications in a large-scale array.

关键词： Performance evaluation Three-dimensional displays Neuromorphic engineering Memristors Switches Reservoirs Hardware

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Emerging Internet of Things driven carbon nanotubes-based devices

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Nano Research 2022年第5期15卷 4613-4637页

作者： Shu Zhang Jinbo Pang Yufen Li Feng Yang Thomas Gemming Kai Wang Xiao Wang Songang Peng Xiaoyan Liu Bin Chang Hong Liu Weijia Zhou Gianaurelio Cuniberti Mark HRümmeli Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong Institute for Advanced Interdisciplinary Research(iAIR)University of JinanJinan 250022China Department of Chemistry Guangdong Provincial Key Laboratory of CatalysisSouthern University of Science and TechnologyShenzhen 518055China Leibniz Institute for Solid State and Materials Research Dresden P.O.Box 270116Dresden D-01171Germany State Key Laboratory of Crystal Materials Center of Bio&Micro/Nano Functional MaterialsShandong University27 Shandanan RoadJinan 250100China School of Electrical Engineering Qingdao UniversityQingdao 266071China Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences 1068 Xueyuan AvenueShenzhen University TownShenzhen 518055China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China School of Chemistry and Chemical Engineering University of JinanJinan 250022China College of Energy Soochow Institute for Energy and Materials InnovationsSoochow UniversitySuzhou 215006China Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province Soochow UniversitySuzhou 215006China Centre of Polymer and Carbon Materials Polish Academy of SciencesM.Curie Sklodowskiej 34Zabrze 41-819Poland Institute of Environmental Technology(CEET) VSB-Technical University of Ostrava17.Listopadu 15Ostrava 70833Czech Republic Dresden Center for Computational Materials Science Technische Universität DresdenDresden 01062Germany Dresden Center for Intelligent Materials(GCL DCIM) Technische Universität DresdenDresden 01062Germany Institute for Materials Science and Max Bergmann Center of Biomaterials Technische Universität DresdenDresden 01069Germany Center for Advancing Electronics D

Carbon nanotubes(CNTs)have attracted great attentions in the field of electronics,sensors,healthcare,and energy *** emerging applications have driven the carbon nanotube research in a rapid ***,the structure control over CNTs has inspired an intensive research vortex due to the high promises in electronic and optical device ***,this in-depth review is anticipated to provide insights into the controllable synthesis and applications of high-quality ***,the general synthesis and post-purification of CNTs are briefly ***,the state-of-the-art electronic device applications are discussed,including field-effect transistors,gas sensors,DNA biosensors,and pressure ***,the optical sensors are delivered based on the *** addition,energy applications of CNTs are discussed such as thermoelectric energy ***,future opportunities are proposed for the Internet of Things(IoT)oriented sensors,data processing,and artificial intelligence.

关键词： carbon nanotubes electronics sensors electronic skins Internet of Things artificial intelligence

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