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Annual International Symposium on Reliability Physics

作者： Hao Chang Longda Zhou Hong Yang Zhigang Ji Qianqian Liu Eddy Simoen Huaxiang Yin Wenwu Wang Microelectronics Institute University of Chinse Academy of Sciences Beijing China National Key Laboratory of Science and Technology on Micro/Nano Fabrication School of Microelectronics Shanghai Jiaotong University Shanghai China Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics Chinese Academy of Science Beijing China IMEC Leuven Belgium

ISBN: (纸本)9781728168937;9781728168944

A comparative study is carried out to clarify the energy distribution of traps under hot carrier degradation (HCD) and negative bias temperature instability (NBTI) in short channel p-FinFETs. Two sources of traps, pre-existing traps and generated traps, are identified and their energy profiles are separated using Discharging-based Multi-pulse (DMP) method. The pre-existing traps are located below valance band of silicon (Ev), while the two generated traps are located in 0.4eV above E_v and near conduction band (E_c) of silicon, respectively. The two generated traps are highly sensitive to stress voltage and stress time under NBTI and HCD, however, the generated trap 1 is more sensitive to stress temperature than generated trap 2 under HCD. When switching to long channel devices, the overall degradation is reduced due to less trap generation.

关键词： Negative bias temperature instability Temperature sensors Degradation Thermal variables control Switches Hot carriers Silicon

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Cost-Effective 1200 V SiC MOSFETs on a Novel 150 mm SiC Engineered Substrate with Dummy-Grade Material Reuse

Cost-Effective 1200 V SiC MOSFETs on a Novel 150 mm SiC Engi...

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International Electron devices Meeting (IEDM)

作者： Xinhua Wang Xiangjie Xing Xiaolei Yang Xin Yang Yan Chen Guoliang Ma Bixuan Wang Zhifei Zhao Chao Yuan Yun Bai Sen Huang Yipei Lei Jingyuan Shi Fuchao Liu Yuhao Zhang Fenwen Mu Xinyu Liu Sheng Liu Yue Hao HF&HV Device and Integrate Center Institute of Microelectronics Chinese Academy of Science Beijing China State Key Laboratory of WBS Devices and Integrated Technology Nanjing Electronic Devices Institute Nanjing China Center for Power Electronics Systems Virginia Tech Blacksburg VA USA Institute of Technological Sciences Wuhan University Wuhan China TJ Innovative Semiconductor Substrate Technology Co. Ltd. Tianjing China Xidian University Xi'an China

ISBN: (数字)9798350365429

ISBN: (纸本)9798350365436

The SiC substrate cost accounts for >50% of final device cost, and its manufacturing suffers from a high carbon footprint. To address this challenge, this work demonstrates a novel 150 mm single-crystal SiC engineered substrate, which homogeneously integrates a prime-grade SiC layer onto a dummy-grade SiC substrate by surface-active bonding. This engineered substrate reuses low-grade SiC substrates, which are often disposed as wastes in the MOSFET industrial production, as well as recycling the high-grade wafer for over 30 times. It thus can enable a drastic reduction in the substrate cost (by ~40%) and the associated carbon footprint. The engineered substrate demonstrates a defect density as low as prime-grade substrate, a low thermal boundary resistance (TBR) of 2.8 m 2 K/GW, as well as very small electric field at the bonded interface. The TBR is among the lowest reported for the SiC interfaces bonded with SiC, GaN, and $\text{Ga}_device\mathrm{O}_technology$ . The 150 mm, 1200 V-class SiC epi grown on this substrate achieved a high killer-defect-free yield of 99.2%. The 1200 V, 20 $\mathrm{m}\Omega$ SiC MOSFETs fabricated on this 150 mm epi demonstrate a yield over 70% (for $I_{\text{DSS}} < 2\mu A$ . at 1200V), as well as a performance and reliability comparable to the state-of-the-art commercial devices. Circuit robustness tests reveal no degradation of the bonding interface under a >250 A, 10 ms surge current. To the best of our knowledge, this is the first report of the wafer-level device data and high-current robustness for a SiC engineering substrate. These results show the great potential of this new substrate technology to enable more economical and sustainable SiC power electronics.

关键词： MOSFET Costs Silicon carbide Thermal resistance Thermal engineering Robustness Bonding Surges Substrates Carbon footprint

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Comparison of DC/AC Hot Carrier Degradation between Short Channel Si Bulk and SiGe SOI p-FinFETs

Comparison of DC/AC Hot Carrier Degradation between Short Ch...

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International Symposium on Physical & Failure Analysis of integrated Circuits

作者： Hao Chang Yongkui Zhang Longda Zhou Zhigang Ji Hong Yang Qianqian Liu Yongliang Li Renrong Liang Eddy Simoen Huilong Zhu Jun Luo Wenwu Wang Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics Chinese Academy of Science Beijing China Microelectronics Institute University of Chinse Academy of Sciences Beijing China National Key Laboratory of Science and Technology on Micro/Nano Fabrication School of Microelectronics Shanghai Jiaotong University Shanghai China Institute of Microelectronics Tsinghua University Beijing China IMEC Leuven Belgium

In this study, both direct current (DC) and alternating current (AC) hot carrier degradation (HCD) of Si Bulk p-FinFETs and SiGe SOI p-FinFETs with 40 nm channel length are compared. The time exponent (n), activation energy (EA) and voltage acceleration factor (VAF) under different HCD stress conditions are investigated. Experiments show that DC HCD of Si FinFETs is almost 1.2 times of that of SiGe FinFETs at room temperature. However, SiGe SOI FinFETs are more sensitive to AC signal frequency than Si Bulk FinFETs in AC HCD measurement. With AC frequency increasing, oxide traps capture in AC HCD of SiGe FinFETs is becoming dominant due to the reduction of slow-interface traps capture.

关键词： Degradation Temperature sensors Temperature measurement Temperature Hot carriers FinFETs Silicon

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Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline𝛽β-Ga_(2)O_(3)thin film on SiC

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Fundamental Research 2021年第6期1卷 691-696页

作者： Wenhui Xu Tiangui You Yibo Wang Zhenghao Shen Kang Liu Lianghui Zhang Huarui Sun Ruijie Qian Zhenghua An Fengwen Mu Tadatomo Suga Genquan Han Xin Ou Yue Hao Xi Wang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071China School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Collaborative Research Center Meisei UniversityHinoJapan Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of ***,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to *** overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC *** of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 *** thermoreflectance measurements were employed to investigate the thermal *** thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing *** barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk *** thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.

关键词： Thermal management Heterogeneous integration Wafer scale𝛽β-Ga_(2)O_(3)on SiC Ion-cutting technique Schottky barrier diodes(SBDs) Transient thermoreflectance(TTR) measurements

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Anomalous Polarization-Switching Phenomena and Noteworthy Pyroelectricity in Ferroelectric Hf0.5zr0.5o2 Polycrystalline Films

SSRN

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SSRN 2023年

作者： Wang, Xudong Zhou, Yong Xiong, Ke Wu, Shuyu Tu, Luqi Chen, Yan Wu, Shuaiqin Zeng, Jinhua Zheng, Yuqing Gu, Shiqun Luo, Man Lin, Tie Shen, Hong Meng, Xiangjian Liu, Qi Chu, Junhao Wang, Jianlu State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai200083 China Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Frontier Institute of Chip and System Fudan University Shanghai200433 China Shanghai Frontier Base of Intelligent Optoelectronics and Perception Institute of Optoelectronics Fudan University Shanghai200433 China Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Chinese Academy of Sciences Hangzhou330106 China BirenTech Shanghai201114 China Jiangsu Key Laboratory of ASIC Design School of Information Science and Technology Nantong University Jiangsu Nantong226019 China

Hafnia-based oxide thin films exhibit unconventional robust ferroelectricity at the nanoscale, paving the way for advancements in next-generation nanoelectronics. However, the stability and dynamics of ferroelectric polarization in hafnia-based oxides films, particularly at the nanoscale, warrant further exploration. In this study, we delve into the factors influencing the formation of the ferroelectric phase. Our findings illuminate that the confinement effect of the capped layer enhances the stabilization of the metastable orthorhombic phase, thereby bolstering its ferroelectricity and endurance. Furthermore, we identify an unprecedented polarization-switching behavior in HfO2-based ferroelectric films, characterized by a decrease in the remanent polarization and an increase in the coercive field as the temperature drops. This peculiar phenomenon can be ascribed to the reduction in the long-range interaction of polarization dipoles upon cooling, as evidenced by the dielectric spectrum. The diminished long-range interaction results in the emergence of nanodomains and a re-entrant relaxer behavior, offering novel insights into the origin of ferroelectricity and the stability of ferroelectric polarization in hafnia-based thin films. Given the commendable compatibility of Hf0.5Zr0.5O2 films with Si substrates and a pyroelectric coefficient of -62.1 μC/m2·K, they emerge as a prime candidate for sensor device applications. © 2023, The Authors. All rights reserved.

关键词： Thin films

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Temperature Cycling Failure Analysis and Improvement of A Panel Level Fan-out QFN Package

Temperature Cycling Failure Analysis and Improvement of A Pa...

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International Symposium on Physical & Failure Analysis of integrated Circuits

作者： Li Chen Wei Gao Yan Huo Lei Xie Yuyu Peng Min Ren Bo Zhang State key Laboratory of Electronic Thin Films and Integrated Device University of Electronic Science and Technology of China Chengdu China SiPLP Microelectronics(Chongqing) Co. Ltd Chongqing China

This article analyzed the temperature cycling test failure root cause and molding film crack mechanism of a panel level fan-out QFN package. Improvement actions are proposed according to Kitagawa-Takahashi diagram. In the micro crack stage, reducing the thermal stress is the key point. As the crack dimension grows to the macro crack propagation stage, crack propagation threshold and SIF must be well balanced. In addition, the maximum non-propagation crack length is also a key factor to optimize the crack issue. These factors are strongly related to material properties such as CTE and Young’s modules. Detail improvement actions are advised by finite element analysis method and verified through experiments. The optimized products have passed TC1000 cycles reliability test with crack free.

关键词： integrated circuits Temperature Failure analysis Fatigue Finite element analysis Reliability Thermal stresses

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A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs

A Fast DCIV Technique for Characterizing the Generation and ...

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Annual International Symposium on Reliability Physics

作者： Longda Zhou Zhaohao Zhang Hong Yang Zhigang Ji Qianqian Liu Qingzhu Zhang Eddy Simoen Huaxiang Yin Jun Luo Anyan Du Chao Zhao Wenwu Wang School of Electronic Electrical and Communication Engineering University of Chinese Academy of Sciences Beijing China National Key Laboratory of Science and Technology on Micro/Nano Fabrication School of Microelectronics Shanghai Jiaotong University Shanghai China Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics Chinese Academy of Science Beijing China IMEC Leuven Belgium China

ISBN: (纸本)9781728168937;9781728168944

A straightforward and fast (~200 μs) DCIV technique, which is completely compatible with the commercial semiconductor analyzer., is demonstrated to measure the time kinetics of interface trap generation (ΔN_IT) during and after DC/AC NBTI stress in Si p-FinFETs. The measurement time of each VG step in a staircase IV waveform can be down to 2 μs, It is found that the repassivation of ΔN_ITafter DC stress is a very fast process and happens within 200 μs recovery time. The delayed recovery phenomenon of ΔN_IT is observed only for Mode-B AC stress and high frequency (f) Mode-A AC stress., resulting in the f-dependent ΔN_IT under Mode-A AC stress and f-Independent ΔN_IT under Mode-B AC stress.

关键词： Negative bias temperature instability Semiconductor device measurement Thermal variables control Silicon Time measurement Kinetic theory Velocity measurement

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A Flexible LIF Neuron Based on NbOx Memristors for Neural Interface Applications

A Flexible LIF Neuron Based on NbOx Memristors for Neural In...

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IEEE Electron devices technology and Manufacturing Conference (EDTM)

作者： Jiaxue Zhu Zuheng Wu Xumeng Zhang Yongzhou Wang Jian Lu Pei Chen Lingli Cheng Tuo Shi Qi Liu University of Chinese Academy of Sciences Beijing China Frontier Institute of Chip and System Fudan University shanghai China Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China Zhejiang Laboratory Hangzhou China

In this work, we demonstrate a flexible NbOx-based memristor for spiking neuron implementation. The NbOx, device exhibits stable threshold switching behavior and superior bending capability with a curvature radius of ... 详细信息

In this work, we demonstrate a flexible NbO_x-based memristor for spiking neuron implementation. The NbO_x, device exhibits stable threshold switching behavior and superior bending capability with a curvature radius of 2.5 mm. Based on such a device, we build a Leaky Integrate-and-Fire neuron and achieve four basic neuron features: all-or-nothing, threshold-driven spiking, refractory period, and strength-modulated frequency response. Moreover, the constructed flexible neuron is compatible with wearable sensing systems and can transform sensed analog signals to spike signals, leading them favorably to be used as neural interfaces.

关键词： Neurons Memristors Transforms Switches Bending Frequency conversion Frequency response

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Modulating 3D memristor synapse by analog spiking pulses for bioinspired neuromorphic computing

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Science China(Physics,Mechanics & Astronomy) 2018年第8期61卷 75-81页

作者： Qi Liu XuMeng Zhang Qing LUO XiaoLong Zhao HangBing Lv ShiBing Long Ming Liu Key Laboratory of Microelectronics Device&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China

Memristor based artificial synapses have demonstrated great potential for bioinspired neuromorphic computing in recent years. To emulate synaptic fimctions, such as short-term plasticity and long-term potentiation/depression, square pulses or combined complex pulse groups are applied on the device. However, in biological neuron systems, the action potentials are analog pulses with similar amplitudes. Furthermore, in biological systems, the intensity of the stimulus is coded into the frequency of action potentials to modulate the weight of synapses. Toward this programming method, we applied a series of analog spiking pulses with same peaks on Ru/TiOJTiN 3D memristor to emulate synaptic functions, such as long-term potentiation/depression and synaptic saturation. Moreover, we demonstrated the conductance change of the device under different stimulus frequencies of analog spiking pulses and described the statistical results of conductance change value, which shows that the device conductance has a larger change value under a higher spiking frequency with identical pulse number. These results show that the analog spiking pulses can well modulate the memristor-based synaptic weight and have a great potential for bioinspired computing in the future.

关键词： 3D memristor analog spiking pulses artificial synapse spiking frequency

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Radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation

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Journal of Semiconductors 2021年第11期42卷 18-25页

作者： Xiaorui Zhang Huiping Zhu Song’ang Peng Guodong Xiong Chaoyi Zhu Xinnan Huang Shurui Cao Junjun Zhang Yunpeng Yan Yao Yao Dayong Zhang Jingyuan Shi Lei Wang Bo Li Zhi Jin High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Science and Technology on Silicon Devices Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China Department of Chemistry City University of Hong KongHong Kong 999077China

Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer ***,very little work combines the simulation calculations with the electrical measurements of SWCNT field-effect transistors(FETs),which limits further understanding on the mechanisms of radiation ***,SWCNT film-based FETs were fabricated to explore the total ionizing dose(TID)and displacement damage effect on the electrical performance under low-energy proton irradiation with different fluences up to 1×1015 p/*** negative shift of the threshold voltage and obvious decrease of the on-state current verified the TID effect caused in the oxide *** stability of the subthreshold swing and the off-state current reveals that the displacement damage caused in the CNT layer is not serious,which proves that the CNT film is ***,according to the simulation,we found the displacement damage caused by protons is different in the source/drain contact area and channel area,leading to varying degrees of change for the contact resistance and sheet *** analyzed the simulation results and electrical measurements,we explained the low-energy proton irradiation mechanism of the CNT FETs,which is essential for the construction of radiation-hardened CNT film-based ICs for aircrafts.

关键词： SWCNT FETs low-energy proton irradiation radiation effects electrical performance TID effect displacement damage effect simulation

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