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Realization of Complete Boolean Logic Functions using a Single Memtranstor

Physical Review Applied 2019年第5期12卷 054062-054062页

作者： Jianxin Shen Peipei Lu Dashan Shang Young Sun Beijing National Laboratory for Condensed Matter Physics and Beijing Advanced Innovation Center for Materials Genome Engineering Institute of Physics Chinese Academy of Sciences Beijing 100190 People's Republic of China School of Physical Science University of Chinese Academy of Sciences Beijing 100190 China The Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Songshan Lake Materials Laboratory Dongguan Guangdong 523808 China

A memtranstor that directly correlates charge (q) and magnetic flux (φ) via the nonlinear magnetoelectric effects is considered as the fourth memelement in addition to the memristor, memcapacitor, and meminductor. Just like the well-known memristor, the memtranstor also holds a great potential for developing advanced electronic devices such as nonvolatile memory and artificial synapses. Complete Boolean logic functions can be implemented in a single memtranstor made of the Fe0.81Ga0.19/[Pb(Mg1/3Nb2/3)O3]0.7[PbTiO]0.3/Fe0.81Ga0.19 multiferroic heterostructure. There are four variables in a memtranstor: the initial state, the input electric potentials of two terminals, and the phase angle. By assigning different values to the four variables, 16 complete Boolean logic functions are demonstrated in experiments using a single memtranstor. The sign of the magnetoelectric voltage of the device is considered as logic output. The concurrence of nonvolatile memory and complete Boolean logic functions makes the memtranstor a promising candidate for future computing systems beyond von Neumann architecture.

关键词： devices Ferroelectrics Ferromagnets Multiferroics Multilayer thin films

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Positive Bias Temperature Instability Degradation of Buried InGaAs Channel nMOSFETs with InGaP Barrier Layer and Al2O3 Dielectric

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Chinese Physics Letters 2017年第5期34卷 101-105页

作者：王盛凯马磊常虎东孙兵苏玉玉钟乐李海鸥金智刘新宇刘洪刚 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 Guangxi Experiment Center of Information Science Guilin University of Electronic Technology Guilin 541004 Microsystem and Terahertz Research Center China Academy of Engineering Physics Chengdu 610200

Positive bias temperature instability stress induced interface trap density in a buried InGaAs channel metaloxide-semiconductor field-effect transistor with a InCaP barrier layer and Al2O3 dielectric is investigated. Well behaved split C-V characteristics with small capacitance frequency dispersion are confirmed after the insertion of the InCaP barrier layer. The direct-current Id-Vg measurements show both degradations of positive gate voltage shift and sub-threshold swing in the sub-threshold region, and degradation of positive △Vg in the oncurrent region. The Id-Vg degradation during the positive bias temperature instability tests is mainly contributed by the generation of near interface acceptor traps under stress. Specifically, the stress induced aeceptor traps contain both permanent and recoverable traps. Compared with surface channel InCaAs devices, stress induced recoverable donor traps are negligible in the buried channel ones.

关键词： InGaAs Positive Bias Temperature Instability Degradation of Buried InGaAs Channel nMOSFETs with InGaP Barrier Layer and Al2O3 Dielectric MOSFET Al

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Artificial Synapses: A Reliable All-2D Materials Artificial Synapse for High Energy-Efficient Neuromorphic Computing (Adv. Funct. Mater. 27/2021)

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Advanced Functional Materials 2021年第27期31卷

作者： Jian Tang Congli He Jianshi Tang Kun Yue Qingtian Zhang Yizhou Liu Qinqin Wang Shuopei Wang Na Li Cheng Shen Yanchong Zhao Jieying Liu Jiahao Yuan Zheng Wei Jiawei Li Kenji Watanabe Takashi Taniguchi Dashan Shang Shouguo Wang Wei Yang Rong Yang Dongxia Shi Guangyu Zhang Beijing National Laboratory for Condensed Matter Physics Key Laboratory for Nanoscale Physics and Devices Institute of Physics Chinese Academy of Sciences Beijing 100190 China Institute of Advanced Materials Beijing Normal University Beijing 100875 China Institute of Microelectronics Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University Beijing 100084 China Beijing Innovation Center for Future Chips (ICFC) Tsinghua University Beijing 100084 China Ming Hsieh Department of Electrical Engineering University of Southern California Los Angeles CA 90089 USA RIKEN Center for Emergent Matter Science (CEMS) Wako 351-0198 Japan School of Physical Sciences University of Chinese Academy of Sciences Beijing 100190 China Songshan Lake Materials Laboratory Dongguan Guangdong 523808 China Research Center for Functional Materials National Institute for Materials Science 1-1 Namiki Tsukuba 305-0044 Japan International Center for Materials Nanoarchitectonics National Institute for Materials Science 1-1 Namiki Tsukuba 305-0044 Japan The Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Beijing Key Laboratory for Nanomaterials and Nanodevices Beijing 100190 China

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Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs

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Chinese Physics B 2017年第9期26卷 515-519页

作者：李建飞吕元杰李长富冀子武庞智勇徐现刚徐明升 School of Microelectronics Shandong UniversityJinan 250100China National Key Laboratory of Application Specific Integrated Circuit(ASIC) Hebei Semiconductor Research InstituteShijiazhuang 050051China Key Laboratory of Functional Crystal Materials and Device(Ministry of Education) Shandong UniversityJinan 250100China School of Physics and Optoelectronics South China University of TechnologyGuangzhou 510640China

The photoluminescence（PL） and electrical properties of Al GaN/GaN high electron mobility transistors（HEMTs） with different Fe doping concentrations in the GaN buffer layers were studied. It was found that, at low Fe doping concentrations,the introduction of Fe atoms can result in a downward shift of the Fermi level in the GaN buffer layer, since the Fe atoms substitute Ga and introduce an FeGa^3＋/2＋ acceptor level. This results in a decrease in the yellow luminescence（YL） emission intensity accompanied by the appearance of an infrared（IR） emission, and a decrease in the off-state buffer leakage current（BLC）. However, a further increase in the Fe doping concentration will conversely result in the upward shift of the Fermi level due to the incorporation of O donors under the large flow rate of the Fe source. This results in an increased YL emission intensity accompanied by a decrease in the IR emission intensity, and an increase in the BLC. The intrinsic relationship between the PL and BLC characteristics is expected to provide a simple and effective method to understand the variation of the electrical characteristic in the modulation Fe-doped HEMTs by optical measurements.

关键词： AlGaN/GaN HEMT Fe-doping photoluminescence leakage current

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Artificial Synapse: Reconfigurable Artificial Synapses between Excitatory and Inhibitory Modes Based on Single-Gate Graphene Transistors (Adv. Electron. Mater. 5/2019)

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Advanced Electronic Materials 2019年第5期5卷

作者： Yao Yao Xinnan Huang Songang Peng Dayong Zhang Jingyuan Shi Guanghui Yu Qi Liu Zhi Jin High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

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Design and simulation of 4H-SiC MESFET ultraviolet photodetector with gain 11th

Design and simulation of 4H-SiC MESFET ultraviolet photodete...

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11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016

作者： Bai, Yun Li, Chengzhan Shen, Huajun Yang, Chengyue Tang, Yidan Liu, Xinyu Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing China ZhuZhou CRRC Times Electric CO. LTD. ZhuzhouHunan China

ISBN: (纸本)9783035710434

The 4H-SiC ultraviolet detector of the MESFET structure with gain is proposed and simulated in this paper. The Schottky gate of MESFET is transparent or semi-transparent to allow more of the incident UV light to be absorbed in the device. The effect of the doping and thickness of the channel layer on the photocurrent of the 4H-SiC MESFET UV detector is simulated and the effect mechanism is analyzed. The simulation results show that the 4H-SiC MESFET exhibits photocurrent below 380 nm. And only when the channel of the 4H-SiC MESFET is in the open state there will be a gain in the detector. Shorter gate length is beneficial to improve the responsivity and the gain of the 4H-SiC MESFET UV detector. When the gate length is set to 10 μm with the channel thickness of 0.3 μm and channel doping of 1×1017 cm-3, the peak responsivity and the gain are calculated to be 12.9 A/W and 55.6 respectively. © 2017 Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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Effect of annealing on the characteristics of Ti/Al Ohmic contacts to p-type 4H-SiC 11th

Effect of annealing on the characteristics of Ti/Al Ohmic co...

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11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016

作者： Tang, Yi-Dan Shen, Hua-Jun Zhang, Xu-Fang Guo, Fei Bai, Yun Peng, Zhao-Yang Liu, Xin-Yu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing China School of Physical Science and Technology Lanzhou University Lanzhou China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of china Chengdu China

ISBN: (纸本)9783035710434

Ti/Al contacts deposited on p-type epilayer doped with Al at 2×1019 cm-3 are reported. The current-voltage curves of Ti/Al contacts annealed at different temperatures from 800 to 1000 °C were measured, which provided the specific contact resistances (SCRs) of 6.59×10-5 Ω/cm2 and 7.81×10-5Ω/cm2 after annealing at 900°C for 5min and 950°C for 2min, respectively. The microstructures of Ti/Al contact on P-type 4H–SiC were investigated by X-ray diffraction (XRD). The results of XRD show that the phases of Ti3SiC2 was formed at the metal/SiC interface after annealing, which could be effective to ohmic contacts on P-type 4H–SiC. The quantitative phase analysis were also discussed, which show that the phase composition of Ti3SiC2 is key factor for low resistance to P-type 4H–SiC. Moreover, simulations proved that the gradual Ti3SiC2 ISL reduces or eliminates the effective barrier height at the metal/Ti3SiC2/p-type and may also contribute to low contact resistivity. © 2017 Trans Tech Publications, Switzerland.

关键词： X ray diffraction

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100-nm Gate-Length GaAs mHEMTs Using Si-doped InP/InAlAs Schottky Layers and Atomic Layer Deposition Al2O3 Passivation with fmax of 388.2 GHz 7

100-nm Gate-Length GaAs mHEMTs Using Si-doped InP/InAlAs Sch...

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7th IEEE International Nanoelectronics Conference, INEC 2016

作者： Sun, Bing Chang, Hudong Wang, Shengkai Ding, Peng Niu, Jiebin Gong, Zhujing Liu, Honggang Key Laboratory of Microelectronics Devices and Integrated Technology High-Frequency High-Voltage Device Beijing100029 China

ISBN: (纸本)9781467389693

100-nm gate length (Lg) In0.52Al0.48As/In0.7Ga0.3As metamorphic high-electron mobility transistors (mHEMTs) on GaAs substrates have been successfully fabricated and extensively studied. Epitaxial structure with Si-doped InP/InAlAs Schottky layers and atomic layer deposition (ALD) Al2O3 passivation were chosen in this study. devices with 100-nm gate length and 2×25μm gate width exhibit excellent DC and RF performance. A maximum drain current of 630 mA/mm, a peak transconductance of 580 mS/mm, a specific ohmic contact resistance of 0.026ωmm, a unity current gain cut-off frequency (fT) of 112.7 GHz, and a maximum oscillation frequency (fmax) of 388.2 GHz have been achieved. These excellent characteristics have made the 100-nm gate length GaAs mHEMTs well suitable for high frequency and high speed applications. © 2016 IEEE.

关键词： Atomic layer deposition

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Simulation study of an enhancement-mode n-type InGaAs MOSFETs with a low zero bias off-current 7

Simulation study of an enhancement-mode n-type InGaAs MOSFET...

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7th IEEE International Nanoelectronics Conference, INEC 2016

作者： Gong, Zhujing Chang, Hudong Wang, Shengkai Li, Yue Sun, Bing Liu, Honggang Microwave Device IC Department Institute of Microelectronics Chinese Academy of Science Beijing100029 China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Science Beijing100029 China

ISBN: (纸本)9781467389693

InGaAs channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with thin channels and wide-bandgap InP vertical field spacers in the S/D have been simulated and investigated. I-V characteristics and leakage current are carefully studied. Good performance can be achieved by controlling indium concentration of InGaAs channel, delta doping concentration and InP caplayer thickness. Simulation results show that an enhancement-mode n-type InGaAs MOSFETs with a low zero bias off-current La can be achieved. An InGaAs MOSFET with Lg=450nm has been made and the measured data fit well with the simulated results. © 2016 IEEE.

关键词： MOSFET devices

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An asynchronous wafer bonding method using spot pressing technique 7

An asynchronous wafer bonding method using spot pressing tec...

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7th IEEE International Nanoelectronics Conference, INEC 2016

作者： Wei, Xu Wang, S.K. Yang, Xu Wang, Y.H. Chen, D.P. Liu, H.-G. Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics China Microwave Device and IC Dept Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Smart Sensing R and D Centre Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9781467389693

A novel asynchronous wafer bonding method based on Spot Pressing Bonding (SPB) using thermo-compression bonding spot by spot with Ti/Au as intermediate layer is proposed and investigated. It is demonstrated that SPB is effective in bonding wafers with patterned, rough or contaminated surfaces. The SPB bonding mechanism is confirmed experimentally and theoretically. © 2016 IEEE.

关键词： Wafer bonding

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