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Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values

Chinese Physics B 2015年第2期24卷 362-367页

作者：马晓华张亚嫚王鑫华袁婷婷庞磊陈伟伟刘新宇 School of Advanced Materials and Nanotechnology Xidian University Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences

In this paper,the off-state breakdown characteristics of two different AlGaN/GaN high electron mobility transistors（HEMTs）,featuring a 50-nm and a 150-nm GaN thick channel layer,respectively,are *** HEMT with a thick channel exhibits a little larger pinch-off drain current but significantly enhanced off-state breakdown voltage（SVoff）.device simulation indicates that thickening the channel increases the drain-induced barrier lowering（DIBL） but reduces the lateral electric field in the channel and buffer underneath the *** increase of BVoff in the thick channel device is due to the reduction of the electric *** results demonstrate that it is necessary to select an appropriate channel thickness to balance DIBL and BVoff in AlGaN/GaN HEMTs.

关键词： AlGaN/GaN HEMTs GaN channel layer thickness off-state breakdown DIBL

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A Combined Wafer Bonding Method using Spin-coated Water Glass Adhesive Layer and Spot Pressing Bonding Technique 13

A Combined Wafer Bonding Method using Spin-coated Water Glas...

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2016 13th IEEE International Conference on Solid-State and integrated Circuit technology (ICSICT)

作者： Yang Xu Shengkai Wang Yinghui Wang Dapeng Chen Honggang Liu Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Micro Electronics of the Chinese Academy of Sciences Smart Sensing R&D Centre Institute of Micro Electronics of the Chinese Academy of Sciences High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Micro Electronics of the Chinese Academy of Sciences

A combined wafer bonding method consist of spot pressing bonding technique and water glass adhesive layer is proposed. The mechanism of water glass bonding is investigated, and the two major factors in this bonding me... 详细信息

ISBN: (纸本)9781467397209

关键词： wafer bonding water glass Spot Pressing Bonding surface energy voids formation

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An asynchronous wafer bonding method using spot pressing technique

An asynchronous wafer bonding method using spot pressing tec...

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IEEE International Nanoelectronics Conference (INEC)

作者： Xu Wei S. K. Wang Xu Yang Y. H. Wang D. P. Chen H.-G. Liu Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Microwave Device and IC Dept. Institute of Microelectronics Beijing China Chinese Academy of Sciences Institute of Microelectronics Beijing China

ISBN: (纸本)9781467389709

A novel asynchronous wafer bonding method based on Spot Pressing Bonding (SPB) using thermo-compression bonding spot by spot with Ti/Au as intermediate layer is proposed and investigated. It is demonstrated that SPB is effective in bonding wafers with patterned, rough or contaminated surfaces. The SPB bonding mechanism is confirmed experimentally and theoretically.

关键词： Bonding Surface topography Pressing microelectronics Wafer bonding Rough surfaces Surface roughness

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Effects of Si δ-Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures

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Chinese Physics Letters 2015年第9期32卷 112-115页

作者：周书星齐鸣艾立鹍徐安怀汪丽丹丁芃金智 State Key Laboratory of Functional Materials for lnformatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 Microveave Devices and Integrated Circuits Department Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029

The InGaAs/InAIAs/InP high electron mobility transistor （HEM：F） structures with lattice-matched and pseudo- morphic channels are grown by gas source molecular beam epitaxy. Effects of Si ^-doping condition and growth interruption on the electrical properties are investigated by changing the Si-cell temperature, doping time and growth process. It is found that the optimal Si ^-doping concentration （Nd） is about 5.0 x 1012 cm-2 and the use of growth interruption has a dramatic effect on the improvement of electrical properties. The material structure and crystal interface are analyzed by secondary ion mass spectroscopy and high resolution transmission elec- tron microscopy. An InGaAs/InAiAs/InP HEMT device with a gate length of lOOnm is fabricated. The device presents good pinch-off characteristics and the kink-effect of the device is trifling. In addition, the device exhibits fT = 249 GHa and fmax 〉 400 GHz.

关键词： InP InGaAs Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures Effects of Si

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Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

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Chinese Physics Letters 2015年第12期32卷 109-112页

作者：申华军唐亚超彭朝阳邓小川白云王弋宇李诚瞻刘可安刘新宇 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 Microwave Device and IC Department Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 Zhuzhou CSR Times Electric Co. LTD Zhuzhou 412001

The fabrication and characterization of 1700 V 7 A 4H-SiC vertical double-implanted metal-oxide-semiconductor field-effect transistors （VDMOSFETs） are reported. The drift layer is 17μm in thickness with 5 × 10^15 cm^-3 n-type doping, and the channel length is 1μm. The MOSFETs show a peak mobility of 17cm2/V.s and a typical threshold voltage of 3 V. The active area of 0.028cm2 delivers a forward drain current of 7A at Vcs = 22 V and VDS= 15 V. The specific on-resistance （Ron,sv） is 18mΩ.cm2 at VGS= 22 V and the blocking voltage is 1975 V （IDS 〈 lOOnA） at VGS = 0 V.

关键词： SiC Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors VGS VDS MOSFET

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MIM capacitors with various Al_2O_3 thicknesses for GaAs RFIC application

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Journal of Semiconductors 2015年第5期36卷 37-40页

作者：周佳辉常虎东刘洪刚刘桂明徐文俊李琦李思敏何志毅李海鸥 Guangxi Experiment Center of Information Science Guilin University of Electronic Technology Microwave Device and IC Department Institute of MicroelectronicsChinese Academy of Sciences State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

The impact of various thicknesses of Al2O3 metal-insulator-metal （MIM） capacitors on direct current and radio frequency （RF） characteristics is investigated. For 20 nm Al2O3, the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm2 and acceptable voltage coefficients of capacitance of 681 ppm/V2 at 1 MHz. An outstanding VCC-a of 74 ppm/V2 at 1 MHz, resonance frequency of 8.2 GHz and Q factor of 41 at 2 GHz are obtained by 100 nm Al2O3 MIM capacitors. High-performance MIM capacitors using GaAs process and atomic layer deposition Al2O3 could be very promising candidates for GaAs RFIC applications.

关键词： MIM capacitors Al2O3 thickness

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Effect of annealing on the characteristics of Ti/Al ohmic contacts to p-Type 4H-SiC

Effect of annealing on the characteristics of Ti/Al ohmic co...

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European Conference on Silicon Carbide & Related Materials (ECSCRM)

作者： Yi-Dan Tang Hua-Jun Shen Xu-Fang Zhang Guo Fei Bai Yun Zhao-Yang Peng Xin-Yu Liu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing China School of Physical Science and Technology Lanzhou University Lanzhou China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of china Chengdu China

Ti/Al contacts deposited on p-type epilayer doped with Al at 2×10 19 cm -3 are reported. The current-voltage curves of Ti/Al contacts annealed at different temperatures from 800 to 1000 °C were measured, which provided the specific contact resistances (SCRs) of 6.59×10 -5 Ω/cm 2 and 7.81×10 -5 Ω/cm 2 after annealing at 900°C for 5min and 950°C for 2min, respectively. The microstructures of Ti/Al contact on P-type 4H-SiC were investigated by X-ray diffraction (XRD). The results of XRD show that the phases of Ti 3 SiC 2 was formed at the metal/SiC interface after annealing, which could be effective to ohmic contacts on P-type 4H-SiC. The quantitative phase analysis were also discussed, which show that the phase composition of Ti 3 SiC 2 is key factor for low resistance to P-type 4H-SiC. Moreover, simulations proved that the gradual Ti 3 SiC 2 ISL reduces or eliminates the effective barrier height at the metal/Ti 3 SiC 2 /p-type and may also contribute to low contact resistivity.

关键词： Ohmic contacts Silicon carbide Annealing X-ray scattering Temperature measurement Microstructure Metals

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Design and simulation of corrugated diaphragm applied to the MEMS fiber optic pressure sensor

Design and simulation of corrugated diaphragm applied to the...

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IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

作者： Yiming Gui Yangxi Zhang Guandong Liu Yilong Hao Chengchen Gao Institute of Microelectronics Peking University China National Key Laboratory of Science and Technology on Micro/Nano Fabrication China Innovation Center for Micro-Nano-electronics and Integrated System China Device and System Collaborative Innovation Center for Micro/Nano Fabrication Beijing China

ISBN: (纸本)9781509019489

In this paper, we propose a corrugated diaphragm applied to the fiber optic pressure sensor which needs a wide sensing range and a large deflection. The corrugated diaphragm can effectively improve the sensitivity of the sensor has been proved by ANSYS simulation. The stress concentration is weakened after the silicon is chamfered into corrugated diaphragm by isotropic etching process. The sensitivity of the corrugated diaphragm can reach to 0.44μ m/MPa which is two times larger than that of the same size planar diaphragm. The maximum sensing stress is up to 14MPa.

关键词： Stress Pressure sensors Sensitivity Optical fibers Micromechanical devices Silicon

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Design of a graphene capacitive pressure sensor for ultra-low pressure detection

Design of a graphene capacitive pressure sensor for ultra-lo...

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IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

作者： Yangxi Zhang Yiming Gui Fanrui Meng Chengchen Gao Yilong Hao Institute of Microelectronics Peking University Beijing China National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing China Device and system Collaborative Innovation Center for Micro/Nano Fabrication Beijing China Innovation Center for MicroNanoelectronics and Integrated System Beijing China

ISBN: (纸本)9781509019489

This paper reports the design and theoretical calculation of a capacitive ultra-low pressure sensor, which is based on circular suspend graphene diaphragm array. The atom scale thickness and high mechanical strength of suspend graphene diaphragm both contribute to ultra-low pressure measure range. As the size of single suspend graphene diaphragm is limited by fabrication process, a parallel connected sensor array is designed to achieve detectable capacitance change and redundancy. In calculation, a sensor array with 40,000 5μm radius suspend graphene diaphragm cells in 4mm×4mm size can provide 288fF/Pa sensitivity to pressure load.

关键词： Graphene Capacitance Pressure sensors Sensor arrays Films Electrodes Sensitivity

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An investigation of capacitance-voltage hysteresis in Al2O3/SiC MIS capacitors

An investigation of capacitance-voltage hysteresis in Al2O3/...

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European Conference on Silicon Carbide and Related Materials, ECSCRM 2014

作者： Wang, Yi Yu Wang, Xiao Lei Li, Cheng Zhan Wu, Jia Han, Lin Chao Shen, Hua Jun Wang, Wen Wu Liu, Xin Yu Microwave Device and IC Department Institute of Microelectronics of Chinese Academy of Sciences Beijing China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China Zhuzhou CSR Times Electric Co. Ltd Zhuzhou China

ISBN: (纸本)9783038354789

Charge trapping behavior in Al2O3/SiC MOS structures was investigated by C-V hysteresis measurements in combination with XPS analysis. According to the quadratic fit of C-V hysteresis vs. tox curves, the densities of the injected charges in the bulk Al2O3 films are the same under different maximum electric field, while the densities of sheet charges close to the Al2O3/SiC interface increase with the increase of maximum electric field. Thus, a simple sheet charge model approximation has been used to evaluate the actual effect of the electron injection phenomenon. The charge trapping levels can be as high as 1013 cm-2, indicating the importance of C-V hysteresis in Al2O3/SiC structures. All the trapped charges are found to be located at a distance ranging from 3 to 4 nm from the interface. Furthermore, no detectable interface oxide between Al2O3 and SiC has been found through our XPS measurements. We conclude that the origin of charge trapping sites in Al2O3/SiC structures is the native defects in atomic layer deposition Al2O3 layer and predominantly the border traps in the Al2O3 near the oxide/semiconductor interface. © (2015) Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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