Doped HfO2, as an emerging ferroelectric material, could overcome the shortcomings of traditional ferroelectrics [1].Hf0.5Zr0.5O2（HZO） is a good choice for Hf-doped materials because of its excellent ferroelectric p...
Doped HfO2, as an emerging ferroelectric material, could overcome the shortcomings of traditional ferroelectrics [1].Hf0.5Zr0.5O2（HZO） is a good choice for Hf-doped materials because of its excellent ferroelectric properties and mature preparation process. In our previous studies, we proposed a new HZO switchable ferroelectric diode（FE diode） with several advantages, such as high operating speed,
Resistive switching random access memory(RRAM)is one of the most promising candidates with highdensity three-dimensional integration characteristics for nextgeneration nonvolatile memory ***,the poor uniformity issue ...
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Resistive switching random access memory(RRAM)is one of the most promising candidates with highdensity three-dimensional integration characteristics for nextgeneration nonvolatile memory ***,the poor uniformity issue caused by the stochastic property of the conductive filament(CF)impedes the large-scale manufacture of RRAM *** array has been introduced into the RRAM to minimize the CF randomness,but the methods are cumbersome,expensive,or resolution-limited for large-scale *** this work,Si subulate array(SSA)substrates with different curvature radii prepared by a wafer-scale and nanoscale-controllable method are introduced for RRAM *** SSA structure,which induces a quasi-single CF or a few CFs formed in the tip region(TR)of the device as evidenced by the high-resolution transmission electron microscopy and energy dispersive spectroscopy characterization,dramatically improves the cycle-to-cycle and device-to-device *** the curvature radius of the TR significantly improves the device performance,including switching voltages,high/low resistance states,and retention *** improved uniformity can be attributed to the enhanced local electric field in the *** proposed SSA provides a low-cost,uniform,CMOS-compatible,and nanoscale-controllable optimization strategy for the largescale integration of highly uniform RRAM devices.
Chemical warfare agents(CWAs)can cause significant harm to health and even death in a very short time even when inhaled in small amounts(~100 mg min/m^(3)).Detection equipment based on conventional techniques,includin...
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Chemical warfare agents(CWAs)can cause significant harm to health and even death in a very short time even when inhaled in small amounts(~100 mg min/m^(3)).Detection equipment based on conventional techniques,including gas chromatography-mass spectrometry,Raman spectroscopy,fluorescence spectroscopy,and ion mobility spectrometry,have the disadvantages of high cost,long detection time,and high power ***,portable,and convenient equipment for target CWAs detection under interference is a *** this study,we propose an alarm system comprising a multitype micro sensor array and a field-programmable gate array-based readout circuit for CWAs simulants *** common volatile organic compound,temperature,and water vapor interference,the proposed multitype sensor-based detection system realizes an alarm function in less than 20 s with thresholds of 1 ppm dimethyl methylphosphonate(DMMP),4.6 ppm 2,2'-dichlorodiethyl ether(DCE),and 20 ppm SO_(2).Furthermore,the proposed detection system was evaluated outside the laboratory and passed the wilderness test,demonstrating its reliability in the *** believe that the proposed alarm system will contribute to the development of intelligent,portable,low-cost,and anti-interference CWAs detection technology.
Microfluidic flow cytometry has the advantage of simple structure and easy sample handling, with a promising application for point-of-care testing. Long time imaging at low flow rates leads to inlet cell deposition an...
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In this paper, the influence of different doping concentrations on the performance of p-type polycrystalline silicon nanowire (SiNW) field effect transistor biosensors was investigated. Silicon nanowire biosensors wit...
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Gesture is a form of non-verbal communication and has many applications, such as sign language communication between deaf and dumb people, robot control, human-computer interaction and medical applications. The common...
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We, for the first time, demonstrated a back-illuminated active-matrix deep UV (DUV) image sensor by monolithically integrating an ultra-wide bandgap (UWBG) Ga2O3 photodetector (PD) array and IGZO thin-film-transistors...
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In this paper, the channel release process of stacked gate-all-around (GAA) nanosheet (NS) devices fabricated based on the epitaxial scheme is investigated extensively. The effects of annealing temperatures, thickness...
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Transformers have demonstrated remarkable success across various deep learning tasks. However, their inference and fine-tuning require substantial computation and memory resources, posing challenges for existing hardw...
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In this work, based on advanced gate-all-around (GAA) technology, the extended sensing gate (ESG) GAA Si nanosheet (SiNS) ion sensitive field effect transistor (ISFET) sensor was fabricated and reported for the first ...
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