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Investigation of Vertically Stacked Horizontal Gate-All-Around SI Nanosheet Ion Sensitive Field Effect Transistor For Detection of C-Reactive Protein

Investigation of Vertically Stacked Horizontal Gate-All-Arou...

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2023 China Semiconductor technology International Conference, CSTIC 2023

作者： Liu, Yang Zhang, Qingzhu Li, Junjie Wu, Cinan Cao, Lei Luo, Yanna Zhang, Zhaohao Wei, Shuhua Wei, Qianhui Yao, Jiaxin Hu, Jiawei Qin, Meiyan Liu, Enxu Han, Yanchu Li, LianLian Li, YingLu Yang, Tao Zhou, Na Gao, Jianfeng Li, Junfeng Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integration Technology Beijing100029 China Guizhou University College of Big Data and Information Engineering Guiyang550025 China North China University of Technology School of Information Science and Technology Beijing100144 China State Key Laboratory of Advanced Materials for Smart Sensing Grinm Group Co. Ltd. Beijing100088 China

ISBN: (纸本)9798350311006

In this work, based on advanced gate-all-around (GAA) technology, the extended sensing gate (ESG) GAA Si nanosheet (SiNS) ion sensitive field effect transistor (ISFET) sensor was fabricated and reported for the first time. Due to the GAA structures and the vertically-stacked SiNS channels, the average sensitivity of the ESG GAA SiNS ISFET sensor can be reached 58.8 mV/pH, which provides good gate control and ultra-sensitive detection capabilities. In addition, the actual minimum detection concentration of C-reactive protein (CRP) by ESG GAA SiNS ISFET sensor in 1× PBS environment is as low as 100pg/mL, which is much lower than the normal concentration of human body. © 2023 IEEE.

关键词： Nanosheets

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Polarization-insensitive silicon intensity modulator with a maximum speed of 224 Gb/s

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Photonics Research 2025年第2期13卷 274-285页

作者： ZANYUN ZHANG BEIJU HUANG QIXIN WANG ZILONG CHEN KE LI KAIXIN ZHANG MEIXIN LI HAO JIANG JIAMING XING TIANJUN LIU XIAOQING LV GRAHAM T.REED Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems School of Electronic and Information EngineeringTiangong UniversityTianjin 300387China Key Laboratory of Optoelectronic Materials and Devices Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Suzhou Institute of Microelectronics and Optoelectronics Integration Suzhou 215213China Key Laboratory for Biomedical Engineering of Ministry of Education Zhejiang UniversityHangzhou 310027China Peng Cheng Laboratory Shenzhen 518000China Optoelectronics Research Centre University of SouthamptonSouthampton SO171BJUK

Polarization-insensitive optical modulators allow an external laser to be remotely interconnected by single-mode optical fibers while avoiding polarization controllers,which would be convenient and cost-effective for co-packaged optics,5G,and future 6G *** this article,a polarization-insensitive silicon intensity modulator is proposed and experimentally demonstrated based on two-dimensional centrally symmetric gratings,featuring a low polarization-dependent loss of 0.15 dB in minimum and polarization insensitivity of eye *** device exhibits a low fiber-to-fiber insertion loss of 9 dB and an electro-optic(EO)bandwidth of 49.8 GHz.A modulation speed of up to 224 Gb/s is also demonstrated.

关键词： polarization controllerswhich G electro optic bandwidth polarization dependent loss G applications external laser polarization insensitive silicon intensity modulator

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Fabrication and Performance Research of Silicon Nanosheet Field Effect Transistor Biosensor

Fabrication and Performance Research of Silicon Nanosheet Fi...

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2022 China Semiconductor technology International Conference, CSTIC 2022

作者： Xiong, Enyi Zhang, Zhaohao Zhang, Qingzhu Wei, Shuhua Wei, Qianhui Zhang, Jing Yan, Jiang School of Information Science and Technology North China University of Technology Beijing100144 China Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integration Technology Beijing100029 China State Key Laboratory of Advanced Materials for Smart Sensing Grinm Group Co. Ltd. Beijing100088 China

ISBN: (数字)9781665497589

ISBN: (纸本)9781665497589

Silicon nanowire (SiNW) FET biosensor has made great contributions to chemical and bio-molecular sensing, and is considered to be one of the best candidates for biosensors. However, due to high sensitivity to pH changes of the buffer solution when detecting biomolecules and low binding rate to biomolecules for small area, SiNW FET biosensor still has the problems of high variation and long response time. To solve the problems, In this paper, we investigate the sensing performances of silicon nanosheets (SiNS) FET with different areas, and found that SiNS FET biosensor with large areas can reduce the sensitivity to pH effectively, thus reducing the detection error caused by pH changes and improving sensing accuracy. In addition, by COMSOL simulating, we also found that devices with wide SiNS show higher bonding rate than that of SiNW devices at low analyte concentrations, thereby decreasing the responding time for high-speed detecting. © 2022 IEEE.

关键词： Nanosheets

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Optodevice-in-Sphere for Biaxial Tilt Sensing

Optodevice-in-Sphere for Biaxial Tilt Sensing

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IEEE SENSORS

作者： Ruoyao Huang Tingxuan Chen Ling Zhu Kwai Hei Li School of Microelectronics Southern University of Science and Technology Shenzhen China State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University) Shenzhen China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen China

ISBN: (数字)9798350363517

ISBN: (纸本)9798350363524

A compact dual-axis tilt sensor utilizing chip-scale GaN optoelectronics is presented. The sensor comprises a cross-shaped optoelectronic device enclosed in a glass sphere, employing mineral oil as a liquid pendulum. The device integrates a light emitter and four independent detectors, designed to detect changes in the air-oil interface induced by dual-axis angular tilts. The sensor exhibits a linear response to an angle range of ±80° on both X- and Y-axes, with sensitivities of 40 nA/° and 37 nA/° respectively. It also demonstrates negligible inter-axis crosstalk, a resolution of up to 0.10, fast response, and high stability. Owing to its compact dimensions, the sensor facilitates integration into detection targets, rendering it an ideal candidate for real-time monitoring applications.

关键词： Liquids Oils Glass Robot sensing systems Optical crosstalk Light emitting diodes Minerals Optical sensors Substrates Testing

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Research on Kalman filter for one-dimensional discrete data

Research on Kalman filter for one-dimensional discrete data

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2021 International Conference on Information technology and Intelligent Control, CITIC 2021

作者： Wei, Fan Zhang, Zupei Jia, Kunpeng School of Computing Xi'an Shiyou University Shanxi Xi'an710065 China Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Kalman filter processes the input and observation signals with noise on the basis of linear state space representation to obtain the system state or real signal. In the one-dimensional model, due to the lack of multi-dimensional description of the target, the prior estimate of the state is often the measured value of the previous moment. When the target state changes, the divergence phenomenon will occur. Aiming at the problem that the one-dimensional traditional Kalman filter lacks the target observation dimension, which leads to the divergence or imprecision of the filter, this paper focuses on improving the estimation method of the target state, and proposes a real-time prediction model based on the cascade structure. This model can improve the response of Kalman filter to the change of target state and dynamically adjust the Kalman iterative domain to improve the measurement accuracy. The digital signal filtering simulation is carried out and the performance of the filter is verified based on LabVIEW. Experimental results show that the algorithm can maintain the accuracy and real-time performance of filtering when only one dimension observation results are obtained. © 2021 Institute of Physics Publishing. All rights reserved.

关键词： Kalman filters

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Simultaneous Measurement of Temperature and Salinity Based on GaN Monolithic devices

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IEEE Transactions on Instrumentation and Measurement 2025年 74卷

作者： Ye, Zhiyong Deng, Ganyuan Liu, Dongmiao Wang, Jingyan Gao, Xiaodi Li, Kwai Hei Zhu, Ling Shenzhen University College of Physics and Optoelectronic Engineering Shenzhen518060 China Southern University of Science and Technology School of Microelectronics Shenzhen518055 China State Key Laboratory of Radio Frequency Heterogeneous Integration Shenzhen University China Shenzhen University Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen518060 China

Precise measurement of temperature and salinity is crucial for marine engineering, resource exploitation, and environmental protection. However, developing a compact device capable of simultaneously measuring both parameters remains a considerable challenge. This study presents a GaN monolithic device that integrates a light-emitting diode (LED) and a photodetector (PD) on a single GaN-on-sapphire chip. Increased salinity reduces the light transmitted to the PD through the sapphire waveguide, decreasing the photocurrent of the PD. Rising temperatures narrow the space charge region, lowering the forward voltage of the PD. Through a signal decoupling of the photocurrent and forward voltage using a linear matrix, salinity with a sensitivity of 0.634 μA/% within a range of 0–7 % and temperature with a sensitivity of 1.53 mV/°C within a range of 5–40 °C can be extracted. The potential applications of this device in practical seawater monitoring are also explored. © 1963-2012 IEEE.

关键词： Salinity measurement

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Review of deep ultraviolet photodetector based on gallium oxide

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Chinese Physics B 2019年第1期28卷 126-142页

作者： Yuan Qin Shibing Long Hang Dong Qiming He Guangzhong Jian Ying Zhang Xiaohu Hou Pengju Tan Zhongfang Zhang Hangbing Lv Qi Liu Ming Liu Key Laboratory of Microelectronics Devices&Integration Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China School of Microelectronics University of Science and Technology of ChinaHefei 230026China University of Chinese Academy of Sciences Beijing 100049China

Ultraviolet(UV) photodetectors(PDs) have drawn great attention in recent years due to their potential application in civil and military fields. Because of its ultrawide bandgap, low cost, strong radiation hardness, and high thermal and chemical stability with high visible-light transparency, Ga_2O_3 is regarded as the most promising candidate for UV ***, the bandgap of Ga_2O_3 is as high as 4.7–4.9 eV, directly corresponding to the solar-blind UV detection band with wavelength less than 280 nm. There is no need of doping in Ga_2O_3 to tune its bandgap, compared to AlGaN, MgZnO,etc, thereby avoiding alloy composition fluctuations and phase separation. At present, solar-blind Ga_2O_3 photodetectors based on single crystal or amorphous Ga_2O_3 are mainly focused on metal–semiconductor–metal and Schottky *** this work, the recent achievements of Ga_2O_3 photodetectors are systematically reviewed. The characteristics and performances of different photodetector structures based on single crystal Ga_2O_3 and amorphous Ga_2O_3 thin film are analyzed and compared. Finally, the prospects of Ga_2O_3 UV photodetectors are forecast.

关键词： gallium oxide ultrawide bandgap ultraviolet(UV) photodetector

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Design of a Three-Dimensional Inlet Structure for Preventing Cell Deposition of Microfluidic Flow Cytometry

Design of a Three-Dimensional Inlet Structure for Preventing...

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International Symposium on Next-Generation Electronics (ISNE)

作者： Yu Hu Ya Li Xu Wang Ziqiang Du Wenchang Zhang Xiaonan Yang School of Electrical and Information Engineering Zhengzhou University Zhengzhou China Department of Gastroenterology The First Affiliated Hospital of Zhengzhou University Zhengzhou China Key Laboratory of microelectronic devices and integration technology Institute of Microelectronics of the Chinese Academy Beijing China

Microfluidic flow cytometry has the advantage of simple structure and easy sample handling, with a promising application for point-of-care testing. Long time imaging at low flow rates leads to inlet cell deposition and inaccurate counting. In this paper, we propose a three-dimensional inlet structure that can effectively reduce cell deposition and achieve a smaller dead zone area. First, the geometric design of the structure is presented and the flow path and dead zone distribution of the structure are analysed. Then, the design method and preparation process of the structure are described. In order to test the optimised performance of the structure, analytical experiments were carried out and cell counts were analysed and counted using image detection methods. The results show that the junction structure is able to assist in sample feeding and increase the cell throughput values by approximately 21%.

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First Demonstration of High-Sensitivity (NEP<1fW•Hz-1/2) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic integration of Ga2O3 Photodetectors and Oxide Thin-Film-Transistors

First Demonstration of High-Sensitivity (NEP<1fW•Hz-1/2) Ba...

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Symposium on VLSI technology

作者： Yuan Qin Congyan Lu Zhaoan Yu Zhihong Yao Feihong Wu Danian Dong Xiaolong Zhao Guangwei Xu Yuhao Zhang Shibing Long Ling Li Ming Liu Key Laboratory of Microelectronics Devices &#x0026 Integration Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China Center of Power Electronics Systems Virginia Polytechnic Institute and State University Blacksburg VA USA School of Microelectronics University of Science and Technology of China Hefei China

ISBN: (纸本)9781665497732

We, for the first time, demonstrated a back-illuminated active-matrix deep UV (DUV) image sensor by monolithically integrating an ultra-wide bandgap (UWBG) Ga 2 O 3 photodetector (PD) array and IGZO thin-film-transistors (TFT) based on a low temperature back-end-of-line (BEOL) process. Benefited from the low off-state current of 10 -13 A, high on/off ratio of 5×10 8 , and high stability of IGZO TFTs, the integrated PD/TFT sensor cell presents super-high sensitivity with NEP down to 1fW•Hz -1/2 with a high responsivity and specific detectivity of 302A/W and 1.7×10 15 Jones, respectively. The 32×32 DUV image sensor shows excellent uniformity and demonstrates a superior image recognition ability with light intensity down to 2 μW/cm 2 . This scalable, high-resolution DUV image sensor shows great promise for advanced imaging and machine vision applications.

关键词： Image sensors Sensitivity Machine vision Monolithic integrated circuits Very large scale integration Photodetectors Thin film transistors

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Investigation of Vertically Stacked Horizontal Gate-All-Around SI Nanosheet Ion Sensitive Field Effect Transistor For Detection of C-Reactive Protein

Investigation of Vertically Stacked Horizontal Gate-All-Arou...

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China Semiconductor technology International Conference (CSTIC)

作者： Yang Liu Qingzhu Zhang Junjie Li Cinan Wu Lei Cao Yanna Luo Zhaohao Zhang Shuhua Wei Qianhui Wei Jiaxin Yao Jiawei Hu Meiyan Qin Enxu Liu Yanchu Han LianLian Li YingLu Li Tao Yang Na Zhou Jianfeng Gao Junfeng Li Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China College of Big Data and Information Engineering Guizhou University Guiyang China School of Information Science and Technology North China University of Technology Beijing China State Key Laboratory of Advanced Materials for Smart Sensing GRINM Group Co. Ltd. Beijing China

In this work, based on advanced gate-all-around (GAA) technology, the extended sensing gate (ESG) GAA Si nanosheet (SiNS) ion sensitive field effect transistor (ISFET) sensor was fabricated and reported for the first time. Due to the GAA structures and the vertically-stacked SiNS channels, the average sensitivity of the ESG GAA SiNS ISFET sensor can be reached 58.8 mV/pH, which provides good gate control and ultra-sensitive detection capabilities. In addition, the actual minimum detection concentration of C-reactive protein (CRP) by ESG GAA SiNS ISFET sensor in 1$\times$ PBS environment is as low as 100pg/mL, which is much lower than the normal concentration of human body.

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