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Dehydroxylation action on surface of TiO_2 films restrained by nitrogen carrier gas during atomic layer deposition process

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Rare Metals 2014年第5期33卷 583-586页

作者： Zhi-Peng Rao Bang-Wu Liu Chao-Bo Li Yang Xia Jun Wan Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Jiaxing Research and Commercialization Center for Microelectronics Equipment Zhejiang Institute of Advanced Technology Chinese Academy of Sciences Jiaxing Kemin Electronic Equipment & Technologies Co. LtdZhejiang Institute of Advanced Technology Chinese Academy of Sciences

A strong influence of nitrogen gas on the content of surface hydroxyl groups of TiO2 films by atomic layer deposition（ALD） was investigated by X-ray photoelectron spectroscopy（XPS）, contact angle measuring system, and UV–Vis spectrophotometer. XPS spectra of O 1s indicate that the content of surface hydroxyl groups is varied when using N2 as carrier gas. The results of water contact angles and optical reflection spectra show that the content variation of surface hydroxyl groups influences the wetting properties and optical reflectivity of TiO2 films. A surface reaction model is suggested to explain the ALD reaction process using N2 as carrier gas.

关键词： Atomic layer deposition TiO2 N2 Surface hydroxyl groups XPS Reaction model

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Impact of stress time of program operation on the endurance performance

Impact of stress time of program operation on the endurance ...

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International Conference on Solid-State and Integrated Circuit technology

作者： Guoming Wang Baohe Yang Meiyun Zhang Shibing Long Ming Liu Lab of Nano fabrication and Novel Device Integration Institute of Microelectronics Chinese Academy of Sciences Beijing CHINA Tianjin Key Laboratory of Film Electronic and Communication Devices Tianjin University of Technology Tianjin CHINA

ISBN: (纸本)9781479932849

In this paper, for the first time, we have studied the effect of various pulse program conditions on the endurance performance of resistive random access memory (RRAM), based on a novel pulse measurement method. When the width of program or SET pulse increases while the pulse height remains constant, the resistance of the low resistance state (LRS) decreases first and then increases. Similarly, when a measurement is carried out by a DC sweeping method, an identical trend can be found. Under different DC program conditions, as the compliance current is reached, the current that flows through the device always maintains at the value of the compliance current, and the stress time is just controlled by changing stop voltage (V stop ) in DC sweeping. By revealing the relationship between the LRS resistance and the stress time of pulse or DC operation, we found that the endurance performance of the bipolar valence change mechanism (VCM) device can be improved by selecting the appropriate pulse width.

关键词： Voltage measurement Abstracts Market research Switches

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Stripping photo-resist with RF dielectric barrier atmospheric pressure plasma

Stripping photo-resist with RF dielectric barrier atmospheri...

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2012 Asian Pacific Conference on Energy, Environment and Sustainable Development, APEESD 2012

作者： Jia, Shaoxia Zhao, Lingli Yang, Jinghua Zhang, Chen Wang, Shougou Key Laboratory Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

ISBN: (纸本)9783037855683

A novel radio frequency single-dielectric-barrier-discharge atmospheric pressure plasma generator was designed and utilized to strip AZ9912 photo-resist (PR). Argon (Ar) and oxygen (O2) were employed as the working gases under atmospheric pressure in ambient air. The PR stripping rate was measured as functions of time, input power, and the flow rates of the oxygen/argon. Optical Emission Spectroscopy (OES) was used to measure the optical emission spectra of the plasma to study the mechanism of PR stripping process. It is presumable that C-H bands were broken by high energy electron in the plasma and OH was generated in the process with the participation of O atom. Optical Microscope, Atomic Force Microscope (AFM) and Scanning Electron Microscope (SEM) were used to measure the surface of the silicon substrate after the stripping. It is proved that this kind of novel device could strip the AZ9912 PR effectively as high as 850nm/min, without residues and ion bombardment damage on the wafer substrate. © (2013) Trans Tech Publications, Switzerland.

关键词： Oxygen

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Photoresists stripping using dielectric barrier glow discharge plasma system

Photoresists stripping using dielectric barrier glow dischar...

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IEEE International Conference on Plasma Science (ICOPS)

作者： Yuanwei Wu Shaoxia Jia Lingli Zhao Shouguo Wang Key Laboratory Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

Summary form only given. A novel radio frequency (rf) dielectric barrier glow discharge plasma (DBGD) was utilized to evaluate the AZ9912 photoresist (PR) stripping effect. Argon (Ar) and oxygen (O2) were employed as working gases and ignited under atmospheric pressure. The discharge power efficiency was calculated based on the Lissajous plot and could reach to 80%. Compared to rf atmospheric glow discharges generated with bare electrodes, the DBGD remains stable and uniform over a larger current. Time dependant dielectric breakdown (TDDB) testing was conducted to evaluate the reliability of gate oxide on MOS capacitors. The surface of the etched PR was characterized using optical microscope and atomic force microscope (AFM). The results showed that there were no visible residues and plasma-induced ion bombardment damage left on the surface. Optical Emission Spectroscopy (OES) was also used to study the working species during the stripping process and the results showed that the possible useful active species belong to the atomic O and OH radical.

关键词： Atom optics Glow discharges Resists Dielectrics Plasmas microelectronics Radio frequency

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Stripping Photo-Resist with RF Dielectric Barrier Atmospheric Pressure Plasma

Stripping Photo-Resist with RF Dielectric Barrier Atmospheri...

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2012 Asian Pacific Conference on Energy,Environment and Sustainable Development(APEESD 2012)

作者： Shaoxia Jia Lingli Zhao Jinghua Yang Chen Zhang Shougou Wang Key Laboratory Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences

A novel radio frequency single-dielectric-barrier-discharge atmospheric pressure plasma generator was designed and utilized to strip AZ9912 photo-resist（PR）. Argon（Ar） and oxygen（O） were employed as the working gases under atmospheric pressure in ambient air. The PR stripping rate was measured as functions of time, input power, and the flow rates of the oxygen/argon. Optical Emission Spectroscopy（OES） was used to measure the optical emission spectra of the plasma to study the mechanism of PR stripping process. It is presumable that C-H bands were broken by high energy electron in the plasma and OH was generated in the process with the participation of O atom. Optical Microscope, Atomic Force Microscope（AFM） and Scanning Electron Microscope（SEM） were used to measure the surface of the silicon substrate after the stripping. It is proved that this kind of novel device could strip the AZ9912 PR effectively as high as 850nm/min, without residues and ion bombardment damage on the wafer substrate.

关键词： Photo-resist stripping Atmospheric pressure plasma OH radical Emission spectra

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Low voltage organic devices and circuits with aluminum oxide thin film dielectric layer

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Science China(Technological Sciences) 2011年第1期54卷 95-98页

作者： SHANG LiWei JI ZhuoYu CHEN YingPin WANG Hong LIU Xin HAN MaiXin LIU Ming Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

Low voltage operating organic devices and circuits have been realized using atomic layer deposition deposited aluminum oxide thin film as dielectric layer. The dielectric film has per unit area capacitance of 165 nF/cm2 and leakage current of 1 nA/cm2 at 1 MV/cm. The devices and circuits use the small-molecule hydrocarbon pentacene as the active semiconductor material. Transistors,inverters,and ring oscillators with operating voltage lower than 5 V were obtained. The mobility of organic field-effect transistors was extracted to be 0.16 cm2/Vs in saturation range,the threshold voltage is 0.3 V,and the on/off current ratio is larger than 105. The gain of inverters is estimated to be 12 at -5 V supply voltage,and the propagation delay is 0.25 ms per stage in 5-stage ring oscillators.

关键词： OFET low voltage atomic layer deposition Al2O3 thin film high-k dielectric

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Stripping photo-resist with rf dielectric barrier atmospheric pressure plasma

Stripping photo-resist with rf dielectric barrier atmospheri...

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2011年第三届微电子及等离子体技术国际会议

作者： Han Chuanyu Wu Yuanwei Zhao Lingli Key Laboratory Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 People''s Republic of China Key Laboratory Microelectronic Devices and Integration TechnologyInstitute of Microelectronics Chinese Academy of Sciences

novel radio frequency single-dielectric-barrier-discharge atmospheric pressure plasma generator was designed and utilized to strip AZ9912 photo-resist (PR).

关键词： photo-resist stripping atmospheric pressure plasma OH radical emission spectra

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Tuning the threshold voltage of low voltage organic thin film transistor using light illumination

Tuning the threshold voltage of low voltage organic thin fil...

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2010 10th IEEE International Conference on Solid-State and Integrated Circuit technology

作者： Shang, Liwei Liu, Ming Ji, Zhuoyu Chen, Yingpin Wang, Hong Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

ISBN: (纸本)9781424457984

High and random voltages are big challenges for practical applications of organic thin film transistors (OTFTs). Herein, a route to achieve devices with both low operating voltages (Vop) and tunable threshold voltages (VTH) was proposed. The Vop was reduced to be less 3 V without lowering the mobility and the ratio of on/off current using a 30 nm Al2O3 insulator film fabricated by atomic layer deposition technology. And the VTH was tuned from -1.7 V to 3.8 V by using light illumination combined with voltage pulse on gate electrodes. The tuning range is nearly twice of the operating voltage. And the tuning process is highly reversible. Uniform VTH of OTFTs can be obtained without changing process or materials. ©2010 IEEE.

关键词： Threshold voltage

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Tuning the Threshold Voltage of Low Voltage Organic Thin Film Transistor using light illumination

Tuning the Threshold Voltage of Low Voltage Organic Thin Fil...

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2010 10th IEEE International Conference on Solid-State and Integrated Circuit technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Liwei Shang Ming Liu Zhuoyu Ji Yingpin Chen Hong Wang Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

ISBN: (纸本)9781424457977

High and random voltages are big challenges for practical applications of organic thin film transistors (OTFTs). Herein, a route to achieve devices with both low operating voltages (Vop) and tunable threshold voltages (Vm) was proposed. The Vop was reduced to be less 3 V without lowering the mobility and the ratio of on/off current using a 30 nm Al2O3 insulator film fabricated by atomic layer deposition technology. And the VTh was tuned from 1.7 V to 3.8 V by using light illumination combined with voltage pulse on gate electrodes. The tuning range is nearly twice of the operating voltage. And the tuning process is highly reversible. Uniform VTH of OTFTs can be obtained without changing process or materials.

关键词： threshold voltage illumination Organic thin-film transistors VOLTAGE tuning Voltage pulses operating voltage Low voltage Vanadium

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Organic-inorganic hybrid circuit with organic memory and MOSFET

Organic-inorganic hybrid circuit with organic memory and MOS...

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IEEE International Nanoelectronics Conference (INEC)

作者： Xing H. Liu Zhuo Y. Ji De Y. Tu Li W. Shang Ming Liu Chang Q. Xie Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy and Sciences Beijing China Institute of Microelectronics Chinese Academy and Sciences Chaoyang China

ISBN: (纸本)9781424435432;9781424435449

In this paper, the organic-inorganic hybrid circuit is demonstrated with the sandwiched structure of Au/poly(3,4-ethylene-dioxythiophene): polystyrenesulfonate/Au organic memory device and N-type MOSFET for nonvolatile memory application. The MOSFET is fabricated with 0.13-¿m CMOS technology. One transistor and one resistor (1T-1R) structure is fabricated in this hybrid circuit, in which the transistor is used as a select cell to limit the compliance current. The compliance current is determined by the transistor's gate voltage, resulting in the control of electrical resistance of the filamentary conductive paths in the low resistive state. The resistive ratio between the ON- and OFF-state is on the order of 10 3 .

关键词： MOSFET circuits Gold Electrodes Organic light emitting diodes Voltage Nonvolatile memory Resistors OFETs Photovoltaic cells Polymer films

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