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Nondestructive visualization of graphene on Pt with methylene blue surface modification

Science China Materials 2022年第10期65卷 2763-2770页

作者： He Kang Yanhui Zhang Yun Wu Shike Hu Jing Li Zhiying Chen Yanping Sui Shuang Wang Sunwen Zhao Runhan Xiao Guanghui Yu Songang Peng Zhi Jin Xinyu Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device InstituteNanjing 210016China Microwave Devices and Integrated Circuits Department Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

Efficient large-scale nondestructive quality assessment of graphene on Pt is essential to the in-depth growth research and practical applications of ***,we present a very simple method for directly observing the domains and defects in graphene on Pt using an ordinary optical *** was achieved by modifying graphene on Pt using methylene blue(MB).Because the chemical activities of graphene and Pt surface differ significantly,the adsorption and reaction of MB on graphene and platinum surface *** can determine the distribution of graphene crystal domains and defects by comparing the colors in the optical *** addition,this characterization method causes no obvious damage to the Pt substrate and ***,it does not affect the recycling of the substrate or the subsequent characterization or application of *** study provides a nondestructive method for measuring the quality of graphene on Pt on a large scale,as well as a reference for the characterization and doping of other two-dimensional materials.

关键词： graphene Pt nondestructive visualization surface modification methylene blue

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Experimental Investigation of Ultra-Low Temperature LA2O3/HFO2 Bi-Layer Dipole-First Process Using PVD Method for Advanced IC Technology

Experimental Investigation of Ultra-Low Temperature LA2O3/HF...

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China Semiconductor Technology International Conference (CSTIC)

作者： Yanzhao Wei Jiaxin Yao Renren Xu Qingzhu Zhang Huaxiang Yin Integrated Circuit Advanced Process R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing China School of Integrated Circuits University of Chinese Academy of Sciences Beijing China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

In this paper, a La 2 O 3 /HfO 2 bi-layer dipole-first (DF) process is proposed and investigated by ultra-low temperature PVD dielectric laminates to achieve lower gate effective work function (EWF) for monolithic 3D-IC (M3D) application. The impacts of ultra-low temperature La-dipole on EWF modulation and interfacial properties are comprehensively investigated. It is found that the flat-band voltage (V FB ) negatively shifts 60 mV with sub-1nm La 2 O 3 thickness, which provides an effective way to meet the require of Si conduction band-edge EWF modulation. Furthermore, the electron trap/detrap densities (Not) and interfacial trap densities (Dit) are suppressed by La 2 O 3 /HfO 2 bi-layer DF process to improve device performance. These results exhibit a promising bi-layer DF process in low thermal integration for advanced IC technology.

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Efficient second-harmonic emission via strong modal overlap in single-resonant lithium niobate nanocavity

arXiv

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arXiv 2025年

作者： Jiang, Zhi Yao, Danyang Gao, Yu Ran, Xu Li, Duomao Zhang, Erqi Wang, Jianguo Gan, Xuetao Zhang, Jinchuan Liu, Fengqi Hao, Yue State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Faculty of Integrated Circuits Xidian University Xi’an710071 China Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technology Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and Technology Northwestern Polytechnical University Xi’an710129 China Laboratory of Solid-State Optoelectronics Information Technology Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China

High-efficiency second-harmonic generation (SHG) in compact integrated photonic systems is crucial for advancing nonlinear optical technologies. However, achieving exceptional conversion efficiencies while maintaining stable performance remains a significant challenge. Here, we report a high-Q single-resonant photonic crystal nanobeam cavity (PCNBC) on a polymer-loaded lithium niobate on insulator (LNOI) platform, which enables bright second-harmonic (SH) emission. Through synergistic optimization of modal confinement and spatial overlap in a y-cut LN architecture, our device achieves a normalized SHG conversion efficiency of 163%/W, outperforming previous LN-based photonic crystal cavities LN-based photonic crystal cavities by over three orders of magnitude. The visible SH emission at 768.77 nm exhibits a single-lobe radiation pattern with precise spectral alignment between fundamental (FH) and second-harmonic (SH) modes, a critical feature for integrated photonic circuits. Remarkably, the conversion efficiency remains stable under thermal variations up to 20°C, addressing a key limitation of multi-resonant systems. High-order cavity modes are directly visualized via CCD imaging, confirming strong spatial overlap. This work establishes a record SHG conversion efficiency for LN microcavities and provides a scalable, temperature-insensitive architecture for nonlinear light sources, with immediate applications in quantum optics and chip-scale interconnects. © 2025, CC BY.

关键词： Quantum optics

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Cavity-enhanced acousto-optic modulators on polymer-loaded lithium niobate integrated platform

arXiv

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arXiv 2024年

作者： Jiang, Zhi Yao, Danyang Ran, Xu Gao, Yu Wang, Jianguo Gan, Xuetao Liu, Yan Hao, Yue Han, Genquan State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Faculty of integrated circuits Xidian University Xi'An710071 China Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technology Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and Technology Northwestern Polytechnical University Xi'An710129 China Hangzhou Institute of Technology Xidian University Hangzhou311200 China

On chip acousto-optic (AO) modulation represents a significant advancement in the development of highly integrated information processing systems. However, conventional photonic devices face substantial challenges in achieving efficient conversion due to the limited overlap between acoustic waves and optical waves. In this study, we address this limitation by demonstrating an enhanced conversion effect of photonic crystal nanobeam cavities (PCNBCs) in AO modulation on a polymer-loaded lithium niobate integrated platform. Attributed to the high ratio of quality factor (Q) to mode volume (V) and optimal light-sound overlap within the nanocavity, PCNBCs-based AO modulator exhibits a significantly enhanced extinction ratio of 38 dB with a threshold RF power below -50 dBm, which is two orders of magnitude lower than that based on micro-ring resonator (MRRs). In addition, robust digital amplitude shift keying modulations using selected RF and optical channels of the PCNBCs-enhanced AO modulators. These findings validate the compelling properties of the PCNBCs photonic platform, establishing it as a promising candidate for on-chip integrated microwave photonics, optical transceivers, and computing applications. © 2024, CC BY.

关键词： Amplitude shift keying

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A low-Power SRAM with charge cycling based read and write assist scheme 15

A low-Power SRAM with charge cycling based read and write as...

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15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020

作者： Zhang, Hanzun Jia, Song Yang, Jiancheng Wang, Yuan Institute of Microelectronics Peking University Beijing100871 China Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing China

ISBN: (纸本)9781728162355

In a SRAM array, the largest power consumer is pre-charging or voltage switching on bit-lines in read or write operations. The paper presents a bit-line charge cycling based read and write assist circuit for static random-access memory. With help of the assist circuit, the BLs charges wasted in conventional design is reused for BLs pre-charging in next period. The proposed array is simulated in SMIC 14nm FinFET process with a supply voltage of 0.8V. Simulation results show that a 23%-43% power reduction is achieved compared with conventional designs. © 2020 IEEE.

关键词： Static random access storage

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A Systematic Characterization Method for Time-resolved Stability and Reliability Issues on Lateral GaN Power devices

A Systematic Characterization Method for Time-resolved Stabi...

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International Symposium on Power Semiconductor devices and Ics (ISPSD)

作者： Yifei Huang Qimeng Jiang Sen Huang Xinyu Liu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of the Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Beijing China Institute of Microelectronics University of Chinese Academy of Sciences Beijing China

In this work, three testing modes, including continuous hard switching testing (HSW), high-voltage DC stress testing (DC) and recovery testing (RE), are implemented to characterize time-resolved dynamic $R_{\text{ON}}$ behaviors of GaN HEMT devices, based on the inductive-load evaluation platform. The proposed stressing pattern (DC-HSW-DC-RE) enables the separation of de-stress- and transient-stress-induced dynamic $R_{\text{ON}}$ . Based on the stressing pattern, a novel physical-based characterization method is proposed to identify the irreversible degradation of dynamic $R_{\text{ON}}$ , featuring excellent sensitivity when compared with the traditional methods. In addition, lifetime acceleration experiments are carried out, and the irreversible $R_{\text{ON}}$ degradation exhibits a strong dependence on voltage and current, but a weak dependence on temperature.

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A Reconfigurable Mixed Signal CMOS Design for Multiple STDP Learning Rules

A Reconfigurable Mixed Signal CMOS Design for Multiple STDP ...

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International Conference on Electronics Technology (ICET)

作者： Chongyang Huan Yuan Wang Xiaoxin Cui Xing Zhang Key Laboratory of Microelectronics Devices and Circuits (MoE) Institute of Microelectronics Peking University Peking China

ISBN: (数字)9781728162836

ISBN: (纸本)9781728162843

Spike-timing-dependent-plasticity (STDP) is the learning algorithm for spiking neural network (SNN), which promises to obtain deeper understanding of biological neural system and more powerful artificial intelligence. However, most implementations for STDP learning rules have shortcomings in reconfigurability and richness. In this paper, a reconfigurable mixed-signal neuromorphic circuit for multiple STDP learning rules is proposed. Adopting phenomenological models, the design is easy to implement. Under a 65nm CMOS technology, simulation results show that the energy consumption for a weight update option is about 1~50 fJ/spike. The proposed circuit is suitable for neuromorphic applications using various STDP rules.

关键词： operational transconductance amplifier (OTA) neuromorphic engineering spike timing dependent plasticity (STDP) reconfigurability Neuromorphic engineering learning algorithms configurability Neuromorphics Learning energy consumption Rule

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High-sensitivity graphene MEMS force and acceleration sensor based on graphene-induced non-radiative transition

arXiv

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arXiv 2023年

作者： Li, Guanghui Liu, Fengman Yang, Shengyi Liu, Jiang-Tao Li, Weimin Wu, Zhenhua School of Physics and Mechatronic Engineering Guizhou Minzu University Guiyang550025 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China School of Integrated Circuits University of CAS Beijing100049 China

The micro-electromechanical-system (MEMS) force and acceleration sensor utilizing the graphene-induced non-radiative transition was investigated. The graphene-induced non-radiative transition is very sensitive to the distance, and the deflection of the graphene ribbon is highly susceptive to applied force or acceleration. Thus, a high-sensitivity MEMS sensor can be achieved with detecting the graphene ribbon’s deflection of 1 nm, the force of 0.1 pN, and the acceleration of 0.1 mg. The MEMS sensor, with a size of only tens of microns, can be charged by light irradiation without connecting power sources. In addition, it allows long-distance detection, i.e., wireless transmitter circuit can be omitted. Therefore, it will have significant application prospects in the fields of micro-smart devices, wearable devices, biomedical systems, and so on. Copyright © 2023, The Authors. All rights reserved.

关键词： Graphene

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Reversible and Irreversible Polarization Degradation of Hf0.5Zr0.5O2 Capacitors with Coherent Structural Transition at Elevated Temperatures

Reversible and Irreversible Polarization Degradation of Hf0....

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Annual International Symposium on Reliability Physics

作者： Zhaomeng Gao Tianjiao Xin Cheng Liu Yilin Xu Yiwei Wang Yunzhe Zheng Rui Wang Xiaotian Li Yonghui Zheng Kai Du Diqing Su Zhaohao Zhang Huaxiang Yin Weifeng Zhang Chao Li Xiaoling Lin Haitao Jiang Sannian Song Zhitang Song Yan Cheng Hangbing Lyu Key Laboratory of Polar Materials and Devices (MOE) East China Normal University Shanghai China Hualu Technologies Co. Shanghai China National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (CAS) Shanghai China Huawei Technologies Co. Shenzhen China Institute of Microelectronics (CAS) Beijing China Key Laboratory of Photovoltaic Materials of Henan Province Henan University Kaifeng China China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China East China Normal University Lingang Research Institute Shanghai China

ISBN: (数字)9798350369762

ISBN: (纸本)9798350369779

In this study, we investigated the reversible and irreversible polarization degradation of hafnia-based ferroelectric capacitors (FeCAPs) using the state-of-the-art spherical aberration corrected transmission electron microscope (Cs-TEM) with realtime temperature changes. The key observations are as follows: (1) Rapid thermal annealing (RTA) results in incomplete formation of the orthorhombic (o-) phase in the ferroelectric (FE) material, leading to a coherent phase boundary (CPB) between o- and tetragonal (t-) structures. (2) The movement of the o-/t-CPB with temperature corresponds to reversible changes in polarization of hafnia-based FeCAPs. (3) Irreversible degradation in polarization occurs due to migration of the o-/monoclinic (m-) CPB with temperature. These findings provide a new perspective for evaluating the stability of the o-phase in fluorite-type FE materials and offer guidance for optimizing their properties through regulation strategies.

关键词： Degradation Temperature Transmission electron microscopy Microscopy Capacitors Iron Regulation

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Defect Physics of Ternary Semiconductor ZnGeP2 with a High Density of Anion-Cation Antisites: A First-Principles Study

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Physical Review Applied 2021年第2期15卷 024035-024035页

作者： Menglin Huang Shan-Shan Wang Yu-Ning Wu Shiyou Chen Key Laboratory of Polar Materials and Devices (MOE) East China Normal University Shanghai 200241 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China

Anion-cation antisite defects usually have low density in the group III-V (e.g., GaN) and II−IV−V2 (ZnGeN2, ZnSnP2) semiconductors, and thus, have not drawn enough attention in defect studies of ZnGeP2 since 1976. However, our first-principles calculations based on a hybrid functional show that the anion-cation antisite defects (GeP and PGe) can have very high density (1017−1018cm−3), making them the dominant defects in ZnGeP2. Their calculated photoluminescence (PL) spectra agree well with the 1.4 and 1.6 eV PL peaks observed experimentally, indicating that they may be the origin of defects, which challenges previous assumptions that the P vacancy ($V_{\rm{P}}$) defect is responsible for the two PL peaks. Although the anion-cation antisites (GeP and PGe) and cation-cation antisites (GeZn and ZnGe) both have densities as high as 1017cm−3, ZnGeP2 suffers from serious donor-acceptor compensation, which results in a low carrier density (below 1010cm−3), and thus, poor electrical conductivity. These results explain the mysterious observation that ZnGeP2 crystals grown using different methods have a high defect density, but low carrier density and high resistivity, and also indicate that it is challenging to suppress the defect-induced optical absorption in the development of high-power ZnGeP2-based optical devices.

关键词： Luminescence Optoelectronics Point defects Disordered systems Optical materials & elements Semiconductor compounds Density functional calculations Hybrid functionals

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