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15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020

作者： Huang, Qin Wang, Zilin Lu, Wengao School of Software and Microelectronics Peking University Beijing102600 China Key Laboratory of Microelectronic Devices and Circuits Peking University Department of Microelectronics Beijing100871 China

ISBN: (纸本)9781728162355

The data access speed is an important index of the NAND Flash memory. This paper proposes a new structure which can implement high-speed data storage. One important feature of the controller is that one controller can operate four dies of NAND Flash memory at the same time. It improves the speed of data access effectively. The other important feature is that the controller can support both of the Toggle mode and ONFI mode. DDR protocol can achieve high rapid speed of storage. This design is attached to SOC system as AHB slave. The verification results demonstrate that this designed controller can correctly control NAND Flash memory to read, page program, reset, read ID, read status and block erase. The experimental results based on FPGA demonstrate that the speed of page program is 105.2MB/s. The read/write speed of the four dies parallel controller is 4 times better than the traditional controller. © 2020 IEEE.

关键词： Controllers

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Uniform, fast, and reliable CMOS compatible resistive switching memory

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Journal of Semiconductors 2022年第5期43卷 109-115页

作者： Yunxia Hao Ying Zhang Zuheng Wu Xumeng Zhang Tuo Shi Yongzhou Wang Jiaxue Zhu Rui Wang Yan Wang Qi Liu Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China School of Integrated Circuits Anhui UniversityHefei 230601China Frontier Institute of Chip and System Fudan UniversityShanghai 200433China

Resistive switching random access memory(RRAM) is considered as one of the potential candidates for next-generation memory. However, obtaining an RRAM device with comprehensively excellent performance, such as high retention and endurance, low variations, as well as CMOS compatibility, etc., is still an open question. In this work, we introduce an insert TaO_(x) layer into HfO_(x)-based RRAM to optimize the device performance. Attributing to robust filament formed in the TaO_(x) layer by a forming operation, the local-field and thermal enhanced effect and interface modulation has been implemented simultaneously. Consequently, the RRAM device features large windows(> 10^(3)), fast switching speed(-10 ns), steady retention(> 72h), high endurance(> 10^(8) cycles), and excellent uniformity of both cycle-to-cycle and device-to-device. These results indicate that inserting the TaO_(x) layer can significantly improve HfO_(x)-based device performance, providing a constructive approach for the practical application of RRAM.

关键词： uniformity resistance switching field enhance layer thermal enhance layer and interface modulation

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Suppression of Bulk Traps in Al2o3 Gate Dielectric and its Effect on Threshold Voltage Instability in Al2o3/Algan/Gan Metal-Oxide-Semiconductor High Electron Mobility Transistors

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SSRN 2023年

作者： Deng, Kexin Huang, Sen Wang, Xinhua Jiang, Qimeng Yin, Haibo Fan, Jie Jing, Guanjun Wei, Ke Zheng, Yingkui Shi, Jingyuan Liu, Xinyu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Bulk trapping and its effects on threshold voltage hysteresis (ΔVTH) in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) are researched through isothermal capture transient spectroscopy. A post deposition annealing (PDA) at 500 ℃ in the O2 ambient is confirmed to be an effective way to reduce the bulk traps in the atomic layer deposited (ALD)-Al2O3 film as it contributes to the suppressed ΔVTH in Al2O3/AlGaN/GaN MOS-HEMTs. Isothermal-mode capacitance deep level transient spectroscopy (C-DLTS) is utilized to investigate the threshold voltage instability in Al2O3/AlGaN/GaN MOS-HEMTs. The evolution of the C-DLTS signals verifies the continual charging of oxide bulk traps in the Al2O3 gate dielectric once the gate bias of the MOS-HEMTs is applied exceeding +3 V, which leads to the degraded ΔVTH as well as subthreshold slopes in transfer characterization. Such traps probably stem from the Al-O-H component in as-deposited Al2O3 layers, as detected by X-ray photoelectron spectroscopy (XPS) analysis. Energy band simulation further illustrates the capture process of the oxide bulk traps, verifying the physical relationship between bulk-trapping and ΔVTH. © 2023, The Authors. All rights reserved.

关键词： Gallium nitride

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Direct Cu-polyimide Bonding Achieved by Surface Activation and Pt-catalyzed Formic Acid Atmosphere

Direct Cu-polyimide Bonding Achieved by Surface Activation a...

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2021 IEEE International Conference on Integrated circuits, Technologies and Applications, ICTA 2021

作者： Meng, Ying Gao, Runhua Wang, Xinhua Chen, Xiaojuan Huang, Sen Wei, Ke Wang, Dahai Mu, Fengwen Liu, Xinyu Chinese Academy of Sciences High-Frequency High-Voltage Device and Integrated Circuits RD Center Institute of Microelectronics Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9781665417471

Recent flexible printed circuit applications of high-frequency wireless communication systems require thicker metal layers on substrates for lower ohmic losses. In this paper, a Cu layer over 50-micron thick was directly generated on the polyimide substrate by heterogeneous bonding method without interlayer. The polyimide was first sputtered a 200 nm-thick Cu layer, and then was activated by oxygen plasma to improve its hydrophilicity and achieve direct adhesion between polyimide and nanoscale Cu deposition, and eventually was bonded with a 50micron-thick Cu foil in a Pt-catalyzed formic acid atmosphere by thermo-compression. The effectiveness of this method was verified by comparing bonding interfaces, shear strength, and fracture modes of bonded samples with and without a Cr interlayer. This method provides a new idea for the integration of heterogeneous materials needed in wearable products and flexible printed circuits. © 2021 IEEE.

关键词： Formic acid

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2.4-GHz 16-QAM Passive Backscatter Transmitter for Wireless Self-Power Chips in IoT

2.4-GHz 16-QAM Passive Backscatter Transmitter for Wireless ...

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IEEE International Symposium on circuits and Systems (ISCAS)

作者： Enbin Gong Hao Zhang Xiaolong Chen Le Ye Ru Huang Key Laboratory of Microelectronics Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing 100871 China

ISBN: (数字)9781728133201

ISBN: (纸本)9781728133218

A 2.4-GHz 16-QAM ultra-low-power passive transmitter for wireless self-power chips in IoT is proposed. To expand wireless sensor networks, it achieves energy harvest and low-power wireless communication with 2.4-GHz infrastructure. Besides, the backscatter technique is employed to reduce power consumption and is compatible with multiple quadrature amplitude modulation (M-QAM) to increase data rate. Measured results show that the transmitter just dissipates 1 μW from 1.8-V supply voltage with 6.46% EVM at 4-Mb/s data rate. Moreover, the transmitter has great availability whether at 100 Mb/s data rate or for the input power of a wide dynamic range. The chip is fabricated in the 0.18-μm 1P6M standard CMOS process and occupies a silicon area of 1465 × 915 μm 2 without pads.

关键词： Backscatter Power demand Wireless sensor networks Wireless communication Radio frequency Capacitors Quadrature amplitude modulation

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Super-Heisenberg Scaling in a Triple-Point Criticality

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Physical Review Letters 2025年第19期134卷 190802-190802页

作者： Jia-Ming Cheng Yong-Chang Zhang Xiang-Fa Zhou Zheng-Wei Zhou Xi’an Microelectronics Technology Institute Xi’an 710065 People’s Republic of China MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter Shaanxi Key Laboratory of Quantum Information and Quantum Optoelectronic Devices School of Physics Xi’an Jiaotong University Xi’an 710049 People’s Republic of China CAS Key Lab of Quantum Information University of Science and Technology of China Hefei 230026 People’s Republic of China Synergetic Innovation Center of Quantum Information and Quantum Physics University of Science and Technology of China Hefei 230026 People’s Republic of China Hefei National Laboratory University of Science and Technology of China Hefei 230088 People’s Republic of China

We investigate quantum-enhanced metrology in a triple point criticality and discover that quantum criticality does not always enhance measurement precision. We have developed suitable adiabatic evolution protocols to effectively restrain excitations, which could accelerate the adiabatic evolutions and lead to an exponential super-Heisenberg scaling. This scaling behavior is quite valuable in practical parameter estimating experiments with limited coherence time. Dissipation can strengthen the super-Heisenberg scaling until decoherence increases to dominate in the dissipative dynamics. Additionally, measurement precisions beyond Heisenberg scaling can be experimentally achieved in the trapped ion system. Our findings strongly indicate that criticality-enhanced metrology can indeed significantly enhance measurement precisions to a super-Heisenberg scaling when combining a triple point and beneficial parameter modulations, which will be conducive to the exploration of other super-Heisenberg scaling and their applications.

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Development of HSQ replacement gate process for silicon nanowire MOS devices

Development of HSQ replacement gate process for silicon nano...

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IEEE Electron devices Technology and Manufacturing Conference (EDTM)

作者： Kun Tu Xiaoqiao Dong Baotong Zhang Ru Huang Ming Li Peimin Lu Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China Fuzhou University Fuzhou China

In this paper, we have developed a replacement gate process with HSQ based on electron beam transmission exposure, which can simply and efficiently realize ideally symmetrical gate-all-around structure. HSQ replacement gate with intact morphology is successfully prepared on suspended nanowire arrays. With Si₃N₄ as the filling dielectric material, HSQ replacement gate is flattened by CMP and removed by hydrofluoric acid. Finally, the self-aligned and completely controllable poly-Si gate-all-around structure is realized successfully.

关键词： Electron beams Dielectric materials Morphology Logic gates Silicon Nanoscale devices Filling

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Implementation of Lateral Divisive Inhibition Based on Ferroelectric Fet with Ultra-Low Hardware Cost for Neuromorphic Computing

Implementation of Lateral Divisive Inhibition Based on Ferro...

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China Semiconductor Technology International Conference (CSTIC)

作者： Shuhan Liu Tianyi Liu Zhiyuan Fu Cheng Chen Qianqian Huang Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

In this work, a novel bio-inspired hardware design of lateral divisive inhibition is proposed and demonstrated by using only one transistor of ferroelectric FET. The proposed design is simulated based on our developed FeFET model, and is also proved to be functional in spiking neural network. The new design with ultra-low hardware cost exhibits good biological plausibility, showing its great potential for neuromorphic computing.

关键词： Neuromorphic engineering Computational modeling Biological system modeling Neural networks Hardware Transistors Task analysis

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Physical Insights into the Impact of Internal Metal Gate on the Subthreshold Behavior of NCFET Based on Domain Switching Dynamics

Physical Insights into the Impact of Internal Metal Gate on ...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Tianyue Fu Qianqian Huang Liang Chen Chang Su Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

In this work, the influences of the internal metal of gate stack in Negative Capacitance FET (NCFET) are clarified based on domain switching dynamics physically. By analyzing the equivalent ferroelectric (FE)/dielectric (DE) series capacitor, a new method is proposed to study the domain switching process for metal-ferroelectric-insulator-metal (MFIM) structure. Our results illustrate that NC effect of FE/DE series capacitor is closely related to the switching capabilities of FE layer, embodied by the distribution of switching activation field Ea of domains, which also provide the design direction of FE layer for the subthreshold swing optimization of NCFET.

关键词： Switches Iron Logic gates Capacitors Periodic structures Optimization Electric potential

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Origin of Steep Subthreshold Swing Within the Low Drain Current Range in Negative Capacitance Field Effect Transistor

Origin of Steep Subthreshold Swing Within the Low Drain Curr...

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China Semiconductor Technology International Conference (CSTIC)

作者： Chang Su Qianqian Huang Mengxuan Yang Liang Chen Zhongxin Liang Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing CHINA

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

Negative capacitance FET (NCFET) can achieve the steeper subthreshold swing (SS) than conventional MOSFET for the reduction of supply voltage V DD , while many experimental results indicate that NCFETs show the steeper SS only within a limited drain current range. In this work, the physical origin and parameter impacts of drain current range corresponding to steeper SS in NCFET are investigated, based on the modeling of domain switching dynamics of ferroelectric (FE). It is found that the larger remnant polarization is beneficial for the steeper SS with the larger drain current range. Besides, simulation results indicate that only within the limited window of sweeping rate and FE switching time, the drain current range can be enlarged for the steeper switching in NCFET.

关键词： MOSFET Simulation Switches Capacitance Iron Hafnium compounds Switching circuits

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