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IEEE Electron devices Technology and Manufacturing Conference (EDTM)

作者： Caidie Cheng Keqin Liu Bingjie Dang Living Xu Zhen Yang Xiaoqin Yan Yuchao Yang Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Peking University Beijing China State Key Laboratory for Advanced Metals and Materials School of Materials Science and Engineering University of Science and Technology Beijing Beijing China

ISBN: (纸本)9781728181769;9781728181776

The sneak path problem is a main limitation that affects the scale of the memristor crossbar array and hence its practical applications in memory and computing. Here, a bipolar, highly nonlinear selector based on Hf_1-xZr_xO₂ (HZO) was fabricated, which exhibits remarkable performance, including high selectivity of >10⁶, robust endurance of >10⁷, off-state current of ~pA and excellent uniformity, making it attractive for future high-density memristor crossbar arrays.

关键词： Neuromorphic engineering Memristors Switches Large scale integration Manufacturing Leakage currents

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Nanofabrication beyond optical diffraction limit: Optical driven assembly enabled by superlubricity

arXiv

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arXiv 2024年

作者： Jiang-Tao, Liu Peng, Deli Yang, Qin Liu, Ze Wu, Zhenhua College of Physics and Mechatronic Engineering Guizhou Minzu University Guiyang550025 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Institute of Superlubricity Technology Research Institute of Tsinghua University in Shenzhen Shenzhen518057 China Department of Engineering Mechanics Tsinghua University Beijing100084 China School of Integrated Circuits University of CAS Beijing100049 China

The optical manipulation of nanoparticles on superlubricity surfaces is investigated. The research revealed that, due to the near-zero static friction and extremely low dynamic friction at superlubricity interfaces, the maximum intensity for controlling the optical field can be less than 100 W/cm2, which is nine orders of magnitude lower than controlling nanoparticles on traditional interfaces. The controlled nanoparticle radius can be as small as 5 nm, which is more than one order of magnitude smaller than nanoparticles controlled through traditional optical manipulation. Manipulation can be achieved in sub-microsecond to microsecond timescales. Furthermore, the manipulation takes place on solid surfaces and in non-liquid environments, with minimal impact from Brownian motion. By appropriately increasing dynamic friction, controlling light intensity, or reducing pressure, the effects of Brownian motion can be eliminated, allowing for the construction of microstructures with a size as small as 1/75 of the wavelength of light. This enables the control of super-resolution optical microstructures. The optical super-resolution manipulation of nanoparticles on superlubricity surfaces will find important applications in fields such as nanofabrication, photolithography, optical metasurface, and biochemical analysis. © 2024, CC BY.

关键词： Nanoparticles

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Polarization tunable bidirectional photoresponse in Van der Waals α−In2Se3/NbX2 (X=S,Se,andTe) ferroelectric diodes

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Physical Review Materials 2023年第8期7卷 084412-084412页

作者： Shibo Fang Qiuhui Li Chen Yang Baochun Wu Shiqi Liu Jie Yang Jiachen Ma Zongmeng Yang Kechao Tang Jing Lu State Key Laboratory for Mesoscopic Physics and School of Physics Peking University Beijing 100871 People's Republic of China State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics Tsinghua University Beijing 100871 People's Republic China Key Laboratory of Spintronics Materials Devices and Systems of Zhejiang Province Hangzhou 311305 People's Republic of China Key Laboratory of Material Physics School of Physics and Microelectronics Ministry of Education Zhengzhou University Zhengzhou 450001 People's Republic of China Research Center for Materials Architectures and Integration of Nanomembranes (MAIN) Chemnitz University of Technology 09126 Chemnitz Germany School of Integrated Circuits Peking University Beijing 100871 People's Republic of China Collaborative Innovation Center of Quantum Matter Beijing 100871 People's Republic of China Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD) Peking University Beijing 100871 People's Republic of China Peking University Yangtze Delta Institute of Optoelectronics Nantong 226010 People's Republic of China Key Laboratory for the Physics and Chemistry of Nanodevices Peking University Beijing 100871 People's Republic of China

Ferroelectric diodes can generate a polarization-controlled bidirectional photoresponse to simulate inhibition and promotion behaviors in the artificial neuromorphic system with fast speed, high energy efficiency, and nonvolatility. However, the existing ferroelectric diodes based on ferroelectric oxides suffer from a weak bidirectional photoresponse (below 1 mA/W), difficult miniaturization, and a large response photon energy (over 3 eV). Here, we design a series of van der Waals α−In2Se3/NbX2 (X = S, Se, and Te) ferroelectric diodes with bidirectional photoresponse by using ab initio quantum transport simulation. These devices show a maximum bidirectional photoresponse of 30 (−19) mA/W and a minimum response photon energy of 1.3 eV at the monolayer thickness. Our work shows advanced optoelectronic applications of the van der Waals ferroelectric diodes in the future artificial neuromorphic system.

关键词： Ferroelectricity First-principles calculations Photocurrent 2-dimensional systems Diodes Ferroelectrics Density functional theory Landauer formula

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A Novel High-Endurance FeFET Memory Device Based on ZrO2 Anti-Ferroelectric and IGZO Channel

A Novel High-Endurance FeFET Memory Device Based on ZrO2 Ant...

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International Electron devices Meeting (IEDM)

作者： Zhongxin Liang Kechao Tang Junchen Dong Qijun Li Yuejia Zhou Runteng Zhu Yanqing Wu Dedong Han Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) School of Integrated Circuits Peking University Beijing China Wuhan National High Magnetic Field Center and School of Optical and Electronic Information HuazhongUniversity of Science and Technology Wuhan China

ISBN: (纸本)9781665425735

We successfully developed a high-performance FeFET memory device by integrating ZrO 2 anti-ferroelectric with IGZO channel for the first time. The replacement of conventional HfO 2 ferroelectric by anti-ferroelectric ZrO 2 effectively reduces the coercive field and boosts endurance. Furthermore, the IGZO channel allows for an interlayer free gate stack that lowers the working voltage and enhances retention compared to Si channel. The novel FeFET demonstrates a high endurance up to 10 9 cycles, a good retention of > 10 years, and a low working voltage of 2 V, greatly empowering the device for future embedded memory with ultra-low energy consumption.

关键词： Electrodes Pulse measurements Nonvolatile memory Capacitance-voltage characteristics Current measurement Crystallization Logic gates

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Rectangular suspended single crystal Si nanowire with (001) planes and <001> direction developed via TMAH wet chemical etching

Rectangular suspended single crystal Si nanowire with (001) ...

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China Semiconductor Technology International Conference (CSTIC)

作者： Shuang Sun Baotong Zhang Yuancheng Yang Xia An Xiaoyan Xu Ru Huang Ming Li Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

In this study, a kind of rectangular suspended single crystal Si nanowire with (001) planes and along direction is developed via a CMOS-compatible top-down scheme. In this scheme, the nanowires are formed by anisotropic etching of TMAH on different silicon crystallography orientations. By designing the initial orientations of hard mask patterns, the rectangular suspended silicon nanowires can be successfully fabricated without any sacrificial epitaxial layers. Due to the damage-free process and the high mobility on (001) planes, this scheme will provide a high-quality channel for the future gate-alI-around silicon transistor technology.

关键词： Epitaxial layers Logic gates Silicon Etching Transistors Crystallography Chemicals

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A 160×120 ROIC with non-uniformity calibration for silicon diode uncooled IRFPA

A 160×120 ROIC with non-uniformity calibration for silicon ...

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2019 IEEE International Conference on Electron devices and Solid-State circuits, EDSSC 2019

作者： Zhu, Yajun Niu, Yuze Lu, Wengao Huang, Zhaofeng Zhang, Yacong Chen, Zhongjian Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University Beijing China

ISBN: (纸本)9781728102863

This paper presents a ROIC (Readout Integrated Circuit) with NUC (Non-uniformity Calibration), which is applied in a silicon diode uncooled IRFPA (Infrared Focal Plane Array). We propose blind pixel to calibrate chip temperature non-uniformity and DAC-based calibration for calibrating process non-uniformity. The ROIC is fabricated using a 0.35\mu \mathrm{m} CMOS process with array size of 160\times 120. Power consumption of the ROIC is 41mW, noise of the DAC is less than 2\muV, and the circuit's SNR (Signal-to-Noise Ratio) is 72dB. © 2019 IEEE.

关键词： Pixels

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Source-field-plated β-(Al x Ga 1-x ) 2 O 3 MOSFET with breakdown voltage over 7kV

Micro and Nanostructures

引用

Micro and Nanostructures 2025年 206卷

作者： Hongyu Liu Haozhong Wu Yuangang Wang Yuanjie Lv Shida Han Tingting Han Shaobo Dun Hongyu Guo Xuanze Zhou Guangwei Xu Shibing Long Zhihong Feng National Key Laboratory of Solid-State Microwave Devices and Circuits Hebei Semiconductor Research Institute Hebei Shijiazhuang 050051 China School of Microelectronics University of Science and Technology of China Hefei China

In this letter, β-(Al x Ga 1-x ) 2 O 3 MOSFET with high breakdown voltage are demonstrated. A 150-nm β-(Al 0.14 Ga 0.86 ) 2 O 3 epitaxial layer and a 30-nm Ga 2 O 3 buffer were grown on Fe-doped semi-insulating β-Ga 2 O 3 substrate by metal-organic chemical vapor deposition. The epitaxial thin film exhibits relatively high crystalline quality, with a FWHM of 54 arcsec in the XRD rocking curve and a surface roughness of 2.3 nm. A T-shaped gate and source-field-plated are fabricated to mitigate electric field crowding. The β-(Al 0.14 Ga 0.86 ) 2 O 3 MOSFET with source-drain length of 84 μm demonstrates breakdown voltage of 7.2 kV, combined with the specific on-resistance of 3534 mΩ cm 2 , corresponding to power figures of merit of 14.7 MW/cm 2 . The results highlight the potential of β-(Al x Ga 1-x ) 2 O 3 for high-voltage power electronics.

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Floquet control of topological phases and Hall effects in Z2 nodal line semimetals

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Physical Review B 2025年第23期111卷 235105-235105页

作者： Pu Liu Chaoxi Cui Lei Li Runze Li Dong-Hui Xu Zhi-Ming Yu School of Microelectronics and Physics Hunan University of Technology and Business Changsha 410205 China Centre for Quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE) School of Physics Beijing Institute of Technology Beijing 100081 China Research Center for Quantum Physics and Technologies Inner Mongolia University Hohhot 010021 China School of Physical Science and Technology Inner Mongolia University Hohhot 010021 China Department of Physics and Chongqing Key Laboratory for Strongly Coupled Physics Chongqing University Chongqing 400044 China Center of Quantum Materials and Devices Chongqing University Chongqing 400044 China International Center for Quantum Materials Beijing Institute of Technology Zhuhai 519000 China

Dynamic control of topological properties in materials is central to modern condensed matter physics, and Floquet engineering, utilizing periodic light fields, provides a promising avenue. Here, we use Floquet theory to theoretically study the topological response of a Z2 nodal line semimetal (NLSM) when driven by circularly polarized light (CPL). We demonstrate that the direction of CPL irradiation critically dictates the resulting topological phase transitions. Specifically, when light is incident perpendicular to the nodal line plane, increasing the light amplitude induces two successive topological phase transitions: first, from the Z2 NLSM to a vortex NLSM, a rare and intriguing topological state; and second, a transition from the vortex NLSM to a semimetal with a pair of Weyl points (WPs). In stark contrast, irradiation along other directions directly transforms the Z2 nodal line into a pair of WPs. We further investigate the transport properties of the Floquet Z2 NLSM, focusing on the anomalous and planar Hall effects. The anomalous Hall effect exhibits a direction-dependent amplitude variation, deviating from conventional two-band NLSM behavior. Importantly, we reveal a significant and tunable planar Hall effect, a phenomenon largely unexplored in Floquet topological materials, which is highly sensitive to both light amplitude and direction. Our findings not only present a novel route to realize the vortex NLSM, but also establish an efficient way to control Hall transport phenomena in Z2 NLSMs.

关键词： Dynamics

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Ferroelectricity in HfO2 from a chemical perspective

arXiv

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arXiv 2022年

作者： Yuan, Jun-Hui Mao, Ge-Qi Xue, Kan-Hao Bai, Na Wang, Chengxu Cheng, Yan Lyu, Hangbing Sun, Huajun Wang, Xingsheng Miao, Xiangshui School of Integrated Circuits School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan430074 China Hubei Yangtze Memory Laboratories Wuhan430205 China Department of Electronics East China Normal University Shanghai200241 China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Ferroelectricity observed in thin film HfO2, either doped with Si, Al, etc. or in the Hf0.5Zr0.5O2 form, has gained great technical significance. However, the soft mode theory faces a difficulty in explaining the origin of such ferroelectricity. In this work, we propose that the 7 cation coordination number of HfO2/ZrO2 lies at the heart of this ferroelectricity, which stems from the proper ionic radii of Hf/Zr compared with O. Among the numerous compounds with non-centrosymmetric nature, e.g., mm2 point group, HfO2 and ZrO2 are special in that they are close to the border of 7 and 8 cation coordination, such that the 8-coordination tetragonal intermediate phase could greatly reduce the switching barrier. Other 7-coordination candidates, including SrI2, TaON, YSBr and YOF are also studied in comparison to HfO2/ZrO2, and six switching paths are analyzed in detail for the Pca21 phase. A rule of preferred switching path in terms of ionic radii ratio and coordination number has been established. We also show the possible route from ferroelectric Pca21 phase to monoclinic P21/c phase in HfO2, which is relevant to the fatigue phenomenon. Copyright © 2022, The Authors. All rights reserved.

关键词： Ferroelectricity

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A Generalized Bond Switching Monte Carlo method for amorphous structure generation

Computational Materials Today

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Computational Materials Today 2025年 6卷

作者： Zhengneng Zheng Fan Zheng Yu-Ning Wu Shiyou Chen Lin-Wang Wang Key Lab of Polar Materials and Devices (MOE) and Department of Electronics East China Normal University Shanghai China Key Laboratory of Optoelectronic Materials and Devices Institute of Semiconductors Chinese Academy of Sciences Beijing China School of Physical Science and Technology ShanghaiTech University Shanghai China School of Microelectronics and Key Laboratory of Computational Physical Sciences (MOE) Fudan University Shanghai China

Amorphous semiconductors are used in many electronic devices. For Si and other highly covalent bond systems, the amorphous structures can be generated using the bond switching method. However, for other non-covalent amorphous materials, it becomes challenging to generate their atomic structures. In this work, we extend the bond switching method to various complex and ionic systems. This method can be used to transform a general ionic crystalline structure to an amorphous structure (such as HfO 2 ), or generate the amorphous structures without the crystalline counterparts such as carbon black. We also introduce additional terms in the Bond Switching Monte Carlo process to control the porosity of the amorphous system, such as the amorphous In 2 O 3 . In addition, the amorphous structure can be generated to reproduce the experimental pair correlation function. We have investigated the changes in coordination numbers of the Bond Switching Monte Carlo process, and analyzed the usability of this method depending on the ionicity of the system.

关键词： Bond switching Monte Carlo Amorphous Valence force field Pair correlation function

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