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Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf0.5Zr0.5O2 films: vacancy generation and lattice dislocation

Atomic-scale characterization of defects generation during f...

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International Electron devices Meeting (IEDM)

作者： Yunzhe Zheng Yonghui Zheng Zhaomeng Gao Jun-Hui Yuan Yan Cheng Qilan Zhong Tianjiao Xin Yiwei Wang Cheng Liu Yaru Huang Rong Huang Xiangshui Miao Kan-Hao Xue Hangbing Lyu Key Laboratory of Polar Materials and Devices (MOE) East China Normal University Shanghai China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China Wuhan National Laboratory for Optoelectronics School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan China

ISBN: (纸本)9781665425735

For the first time, we directly observed the lattice dislocation and monoclinic (m-) phase formation in ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) films during fatigue, through the spherical aberration (Cs)-corrected transmission electron microscopy (TEM) technique. The main observations are: 1. More oxygen vacancies (Vo) tend to be generated when the orthorhombic (o-) phase polar axis is close to the out-of-plane direction (parallel to the electrical field); 2. The o-phase with large grain size tends to fragment with lattice dislocation and m-phase formation by martensitic-like transformation; 3. At the interface of m-/o-structure, the Vo formation energies are lowered. This work provides fundamental understanding on the defect generation mechanism of HZO film at the atomic-level, laying a solid foundation to further optimization and commercialization of the ferroelectric HZO devices.

关键词： Grain size Transmission electron microscopy Films Microscopy Ferroelectric materials Lattices Fatigue

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Demonstration of Vertically-stacked CVD Monolayer Channels: MoS2 Nanosheets GAA-FET with Ion>700 µA/µm and MoS2/WSe2 CFET

Demonstration of Vertically-stacked CVD Monolayer Channels: ...

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International Electron devices Meeting (IEDM)

作者： Xiong Xiong Anyu Tong Xin Wang Shiyuan Liu Xuefei Li Ru Huang Yanqing Wu Institute of Microelectronics Key Laboratory of Microelectronic Devices Circuits (MoE) Peking University Beijing Beijing China Wuhan National High Magnetic Field Center Huazhong University of Science and Technology Wuhan China Frontiers Science Center for Nano-Optoelectronics Peking University Beijing China

ISBN: (纸本)9781665425735

Vertical stacking of atomic layer thin channel has been challenging due to the top-gate dielectric integration and complicated process, which typically yield in deteriorated performance. In this work, we demonstrate the 2-monolayer-MoSc-stacked nanosheets with a sequentially layer-by-layer fabrication process using a gate-a11-around fashion. Compared with the 1-channel back-gate transistor, the 2-channel stacked nanosheets (SN) transistor exhibits more than twice of gm improvement. The high I on >400 µA/µm per channel footprint at V d = 1 V is achieved due to short gate length of 100 nm, and low contact resistance of 0.77 k Ω*µm. Statistics of hundreds of devices with various channel lengths show the performance evolution trend and monolithic integration potential based on the large-scale CVD -grown 2D materials. Furthermore, the vertical-stacked MoS 2 /WSe 2 complementary FETs (CFETs) based on CVD grown are also demonstrated for the first time with about 50% footprint reduction, as compared to the planar devices.

关键词： Performance evaluation Stacking Monolithic integrated circuits Logic gates Ions Contact resistance Market research

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A Physical Current Model for Multi-Finger Gate Tunneling FET with Schottky Junction

A Physical Current Model for Multi-Finger Gate Tunneling FET...

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China Semiconductor Technology International Conference (CSTIC)

作者： Yimei Li Jin Luo Qianqian Huang Xia An Le Ye Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China Peking University Information Technology Institute (Tianjin Binhai)

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

Compared with conventional tunneling field-effect transistor (TFET), a novel multi-finger gate tunneling FET with Schottky junction (mFSB-TFET) can effectively obtain the steeper subthreshold slope due to tunneling electric field coupling effect, the higher I on due to the introduced multi-finger gate and Schottky junction, while keeping the ultra-low I off simultaneously. To facilitate the circuit simulation by using this new device, in this paper, we establish a physical model of the channel surface potential in both gate handle region and gate finger region, and then further calculate the tunneling current by considering tunneling electric field coupling effect and the Schottky current by considering the equivalent barrier reduction respectively. The model results with different structure parameters agree well with the Sentautus TCAD simulation results, which shows the validity of this model.

关键词： Semiconductor device modeling Couplings Simulation Tunneling Logic gates Junctions Electric fields

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Deep Spiking Binary Neural Network for Digital Neuromorphic Hardware

Deep Spiking Binary Neural Network for Digital Neuromorphic ...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Zilin Wang Kefei Liu Xiaoxin Cui Yuan Wang Key Laboratory of Microelectronics Device and Circuits (MOE) Institute of Microelectronics Peking University Beijing P. R. China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

The spiking neural network (SNN) converted from artificial neural network (ANN) usually contains many high-precision parameters. This will cause a lot of hardware resources to be consumed. A spiking binary neural network is proposed in this paper, whose weights are binary and it does not contain high-precision parameters. Experimental results show that the proposed network can be adapted to the neuromorphic chip and reduce memory consumption by 16 times without much loss of accuracy.

关键词： Biological neural networks Neurons Hardware Neuromorphics Memory management Membrane potentials Delays

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A 187-pW 51-ppm/°C Self-Adjusting Voltage Reference Circuit

A 187-pW 51-ppm/°C Self-Adjusting Voltage Reference Circuit

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International Conference on Solid-State and Integrated Circuit Technology

作者： Mingwei ZhU Kaixuan Du Tianqiao Wu Changwu Song Le Ye Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking university Beijing China Information Technology Institute Peking University Tianjin Binhai China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

This paper proposed a novel pico-watt voltage reference (VR) circuit for the Internet of Things (IoT) applications. The core circuit consists of purely NMOS transistors operating in the sub-threshold region. This circuit contains a high-precision, high-power VR circuit (VRH) and a low-power, low-accuracy adjustable VR circuit (VRL). After initialization, the output voltage of VRL is adjusted based on the output voltage of VRH automatically. VRH is turned off to save energy when adjustment is completed. After waiting a period of time, VRH is turned on again to calibrate the output voltage of VRL. Thus, with self-adjusting topology, our proposed circuit achieves high accuracy and low power consumption. The output voltage is 168.5mV, while the power consumption is only 187pW and the temperature coefficient (TC) is 51 ppm/°C from -40°C to 85°C.

关键词： Voltage control Power demand MOS devices Very large scale integration Transistors Temperature control Voltage measurement

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Deep-Learning-Enhanced Single-Spin Readout in Silicon Carbide at Room Temperature

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Physical Review Applied 2022年第3期17卷 034046-034046页

作者： Yu-Wei Liao Qiang Li Mu Yang Zheng-Hao Liu Fei-Fei Yan Jun-Feng Wang Ji-Yang Zhou Wu-Xi Lin Yi-Dan Tang Jin-Shi Xu Chuan-Feng Li Guang-Can Guo CAS Key Laboratory of Quantum Information University of Science and Technology of China Hefei 230026 People’s Republic of China CAS Center For Excellence in Quantum Information and Quantum Physics University of Science and Technology of China Hefei 230026 People’s Republic of China High-Frequency High-Voltage Devices and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences 100029 Beijing China

Defect spin qubits in silicon carbide have recently drawn widespread attention. Extraction of spin information in the presence of noise always requires multiple repeated measurements, which consumes a large amount of time resources. In this paper, we propose a deep-learning-enhanced method to extract effective parameters from continuous-wave optically detected magnetic resonance (ODMR) spectra and Rabi oscillations with less time consumption. Even if the signal-to-noise ratio is reasonably low, a well-trained convolutional neural network (CNN) can predict the resonance peaks of ODMR spectra or the period of Rabi oscillations. Because of the fast output of predictions by the CNN, this method can be used to sense the magnetic field in the environment and microwave intensities in real time.

关键词： Coherent control Color centers Crystal defects Quantum information with solid state qubits Semiconductor compounds Artificial neural networks Machine learning Optically detected magnetic resonance

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Radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation

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Journal of Semiconductors 2021年第11期42卷 18-25页

作者： Xiaorui Zhang Huiping Zhu Song’ang Peng Guodong Xiong Chaoyi Zhu Xinnan Huang Shurui Cao Junjun Zhang Yunpeng Yan Yao Yao Dayong Zhang Jingyuan Shi Lei Wang Bo Li Zhi Jin High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Science and Technology on Silicon Devices Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China Department of Chemistry City University of Hong KongHong Kong 999077China

Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer ***,very little work combines the simulation calculations with the electrical measurements of SWCNT field-effect transistors(FETs),which limits further understanding on the mechanisms of radiation ***,SWCNT film-based FETs were fabricated to explore the total ionizing dose(TID)and displacement damage effect on the electrical performance under low-energy proton irradiation with different fluences up to 1×1015 p/*** negative shift of the threshold voltage and obvious decrease of the on-state current verified the TID effect caused in the oxide *** stability of the subthreshold swing and the off-state current reveals that the displacement damage caused in the CNT layer is not serious,which proves that the CNT film is ***,according to the simulation,we found the displacement damage caused by protons is different in the source/drain contact area and channel area,leading to varying degrees of change for the contact resistance and sheet *** analyzed the simulation results and electrical measurements,we explained the low-energy proton irradiation mechanism of the CNT FETs,which is essential for the construction of radiation-hardened CNT film-based ICs for aircrafts.

关键词： SWCNT FETs low-energy proton irradiation radiation effects electrical performance TID effect displacement damage effect simulation

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Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline𝛽β-Ga_(2)O_(3)thin film on SiC

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Fundamental Research 2021年第6期1卷 691-696页

作者： Wenhui Xu Tiangui You Yibo Wang Zhenghao Shen Kang Liu Lianghui Zhang Huarui Sun Ruijie Qian Zhenghua An Fengwen Mu Tadatomo Suga Genquan Han Xin Ou Yue Hao Xi Wang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071China School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Collaborative Research Center Meisei UniversityHinoJapan Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of ***,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to *** overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC *** of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 *** thermoreflectance measurements were employed to investigate the thermal *** thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing *** barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk *** thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.

关键词： Thermal management Heterogeneous integration Wafer scale𝛽β-Ga_(2)O_(3)on SiC Ion-cutting technique Schottky barrier diodes(SBDs) Transient thermoreflectance(TTR) measurements

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Multi-Classification of Cardiovascular Diseases Based on Heart Sound Signals Using Audio Spectrogram Features with Pure Attention Transformer

SSRN

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SSRN 2022年

作者： Yang, Dongru Lin, Yi Wei, Jianwen Lin, Xiongwei Zhao, Xiaobo Yao, Yingbang Tao, Tao Liang, Bo Lu, Sheng-Guo Guangdong Provincial Research Center on Smart Materials and Energy Conversion Devices Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter School of Integrated Circuits School of Materials and Energy Guangdong University of Technology Guangzhou510006 China School of Microelectronics Shenzhen Institute of Information Technology Shenzhen518000 China

Background and objectives: In computer-aided medical diagnosis or prognosis, the automatic classification of cardiovascular diseases (CVDs) based on heart sound (HS) signals is of great importance since the heart sound signal contains a wealth of information that can reflect the cardiovascular status. Traditional binary classification algorithms (normal and abnormal) currently cannot comprehensively assess CVDs based on analyzing various heart sounds. The differences between heart sound signals are relatively subtle, but the reflected heart conditions differ significantly. Consequently, the multiclassification of CVDs from heart sound signals is of utmost importance from a clinical ***: For the multi-classification of heart sound signals, we propose a creative non-convolutional neural networks (CNN) pure-attention transformer model. It has achieved remarkable results from four abnormal HS signals and the typical ***: According to a fivefold cross-validation strategy, the proposed method achieves a mean classification accuracy of 99% and a mean average precision of 0.99. Further, the classification accuracy for Aortic Stenosis (AS), Mitral Regurgitation (MR), Mitral Stenosis (MS), Mitral Valve Prolapse (MVP), and standard heart sound signals (N) is 99.39%, 99.53%, 99.42%, 99.48%, and 99.67%, ***: The results indicate that the framework can precisely classify five classes of heart sound signals. Our method provides an efficient tool for CVD multi-classification based on heart sound signals in clinical settings. © 2022, The Authors. All rights reserved.

关键词： Heart

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TCAD Simulation on Random Telegraphy Noise and Grain-Induced Fluctuation of 3D Nand Cell Transisitors

TCAD Simulation on Random Telegraphy Noise and Grain-Induced...

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China Semiconductor Technology International Conference (CSTIC)

作者： Shijie Hu Ming Li Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing CHINA Frontiers Science Center for Nano-optoelectronics Peking University Beijing CHINA

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

In this work, a TCAD simulation platform was set up to study the real poly-channel modeling, trap-induced noise and random grain doping in 3D NAND cell transistor. The random telegraph noise and size dependence was simulated and analyzed. Simulation results show that the RTN and grain size change have greater influence on threshold voltage (V T ) and channel current (I D ) in 3D NAND than doping fluctuation. It is shown that the instability caused by random doping cannot be ignored, too.

关键词： Solid modeling Three-dimensional displays Fluctuations Doping Tools Semiconductor process modeling Transistors

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