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International Conference on Solid-State and Integrated Circuit Technology

作者： Xiaokang Li Bocheng Yu Gong Chen Ming Li Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China Frontiers Science Center for Nano-optoelectronics Peking University Beijing China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

In this paper, we proposed and fabricated a novel heterogeneous porphyrin/silicon nanowire transistor-based sensor using CMOS process technology. With the difference in hydrophobicity of Si 3 N 4 and SiO 2 , the enrichment of porphyrin molecules on silicon nanowires was achieved, and the device showed highly sensitive photo-sensing even under very low illumination power (ΔVt=3.32V @11.3μW/cm 2 ), great dynamic photo-memory characteristic (ΔV t =31.3V @ programming/erasing time of 10s) and excellent temperature sensing (ΔV t =13.6V @ 90°C temperature range). Those performances make the devices applicable to be used in applications of sensitive and smart non-memory light sensing and reliable temperature sensing.

关键词： Nanowires Silicon Sensors Temperature sensors Threshold voltage Sensitivity Transistors

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Continuous-Time Digital Twin with Analogue Memristive Neural Ordinary Differential Equation Solver

arXiv

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arXiv 2024年

作者： Chen, Hegan Yang, Jichang Chen, Jia Wang, Songqi Wang, Shaocong Wang, Dingchen Tian, Xinyu Yu, Yifei Chen, Xi Lin, Yinan He, Yangu Wu, Xiaoshan Li, Yi Zhang, Xinyuan Lin, Ning Xu, Meng Li, Yi Zhang, Xumeng Wang, Zhongrui Wang, Han Shang, Dashan Liu, Qi Cheng, Kwang-Ting Liu, Ming Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong ACCESS – AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong Institute of the Mind The University of Hong Kong Hong Kong Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China School of Integrated Circuits Hubei Key Laboratory for Advanced Memories Huazhong University of Science and Technology Wuhan430074 China State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai200433 China Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Hong Kong

Digital twins, the cornerstone of Industry 4.0, replicate real-world entities through computer models, revolutionising fields such as manufacturing management and industrial automation. Recent advances in machine learning provide data-driven methods for developing digital twins using discrete-time data and finite-depth models on digital computers. However, this approach fails to capture the underlying continuous dynamics and struggles with modelling complex system behaviour. Additionally, the architecture of digital computers, with separate storage and processing units, necessitates frequent data transfers and Analogue-Digital (A/D) conversion, thereby significantly increasing both time and energy costs. Here, we introduce a memristive neural ordinary differential equation (ODE) solver for digital twins, which is capable of capturing continuous-time dynamics and facilitates the modelling of complex systems using an infinite-depth model. By integrating storage and computation within analogue memristor arrays, we circumvent the von Neumann bottleneck, thus enhancing both speed and energy efficiency. We experimentally validate our approach by developing a digital twin of the HP memristor, which accurately extrapolates its nonlinear dynamics, achieving a 4.2-fold projected speedup and a 41.4-fold projected decrease in energy consumption compared to state-of-the-art digital hardware, while maintaining an acceptable error margin. Additionally, we demonstrate scalability through experimentally grounded simulations of Lorenz96 dynamics, exhibiting projected performance improvements of 12.6-fold in speed and 189.7-fold in energy efficiency relative to traditional digital approaches. By harnessing the capabilities of fully analogue computing, our breakthrough accelerates the development of digital twins, offering an efficient and rapid solution to meet the demands of Industry 4.0. © 2024, CC BY-NC-SA.

关键词： Energy utilization

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In-situ atomic visualization of structural transformation in Hf0.5Zr0.5O2 ferroelectric thin film: from nonpolar tetragonal phase to polar orthorhombic phase

In-situ atomic visualization of structural transformation in...

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Symposium on VLSI Technology

作者： Yunzhe Zheng Chaorong Zhong Yonghui Zheng Zhaomeng Gao Yan Cheng Qilan Zhong Cheng Liu Yiwei Wang Ruijuan Qi Rong Huang Hangbing Lyu Key Laboratory of Polar Materials and Devices (MOE) East China Normal University Shanghai China Chinese Academy of Sciences Institute of Microelectronics Beijing China University of Chinese Academy of Sciences Beijing China

For the first time, we directly visualized the dynamic process of phase transformation in polycrystalline ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) thin film though in-situ spherical aberration (Cs)-corrected transmission electron microscopy (TEM) technique. The main observations are: (1) the dynamic atomic scale structural evolution from centrosymmetric tetragonal (t-) phase to FE orthorhombic (o-) phase under electric field, and (2) the deformation of atomic arrangements in lattice caused by stress is helpful to make the transition happen. These observations provide solid evidence on understanding the fundamental mechanism of the root cause of ferroelectricity in fluorite-type FE materials.

关键词： Atomic measurements Visualization Voltage measurement Transmission electron microscopy Microscopy Tungsten Transforms

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Geometric Variability Aware Quantum Potential based Quasi-ballistic Compact Model for Stacked 6 nm-Thick Silicon Nanosheet GAA-FETs

Geometric Variability Aware Quantum Potential based Quasi-ba...

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International Electron devices Meeting (IEDM)

作者： Shijie Huang Zhenghua Wu Haoqing Xu Jingrui Guo Lihua Xu XinLv Duan Qian Chen Guanhua Yang Qingzhu Zhang Huaxiang Yin Lingfei Wang Ling Li Ming Liu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China Advanced Integrated Circuits R&D Center Institute of Microelectronic of the Chinese Academy of Sciences Beijing China

Quantum-corrected quasi-ballistic compact model is developed for Stacked Silicon Nanosheet (SiNS) Gate-all-around (GAA) FETs. Theories of Density-Gradient-Poisson (DG-P), Singular perturbation and quasi-ballistic to interpret quantum mechanicals on density profile and charge transport are employed in analytical expressions of current, terminal charge and trans-capacitance. Besides, the model incorporates ultra-scaling induced subthreshold degradation and is rigidly verified by comparing to 6-nm-thick-SiNS based experiments (of both ${P-}$ and $N$ -GAAFET) and GTS simulations (of down to 15 nm channel length). Instead of classical Schrodinger-Poisson theory, it holds features of computation-efficiency and SPICE-compatibility. Especially, awareness of geometric variability enables performance and reliability assessments that statistical effects of stacked nanosheets on on-state voltage are predicted. Hence, this high-efficient quantum corrected model is promising in designing integrated circuits and developing a geometry aware design-technology co-optimization flow in the next generation technology node.

关键词： Electric potential Simulation Field effect transistors Gallium arsenide Logic gates Mathematical models Silicon

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A low-Power SRAM with charge cycling based read and write assist scheme

A low-Power SRAM with charge cycling based read and write as...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Hanzun Zhang Song Jia Jiancheng Yang Yuan Wang Institute of Microelectronics Peking University Beijing China Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

In a SRAM array, the largest power consumer is pre-charging or voltage switching on bit-lines in read or write operations. The paper presents a bit-line charge cycling based read and write assist circuit for static random-access memory. With help of the assist circuit, the BLs charges wasted in conventional design is reused for BLs pre-charging in next period. The proposed array is simulated in SMIC 14nm FinFET process with a supply voltage of 0.8V. Simulation results show that a 23%-43% power reduction is achieved compared with conventional designs.

关键词： Random access memory Power demand Voltage control Transistors Timing Heating systems Circuit stability

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Unveiling a giant electrocaloric effect at low electric fields through continuous phase transition design

Advanced Powder Materials

引用

Advanced Powder Materials 2024年第5期3卷 33-45页

作者： Yunyao Huang Leiyang Zhang Pingji Ge Ruiyi Jing Wenjing Shi Chao Li Xiang Niu Vladimir Shur Haibo Zhang Shengguo Lu Yintang Yang Dawei Wang Xiaoqin Ke Li Jin Electronic Materials Research Laboratory Key Laboratory of the Ministry of EducationSchool of Electronic Science and EngineeringFaculty of Electronic and Information EngineeringXi’an Jiaotong UniversityXi’an710049China School of Physics MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed MatterXi’an Jiaotong UniversityXi’an710049China Instrument Analysis Center Xi’an Jiaotong UniversityXi’an10049China Guangdong Provincial Research Center on Smart Materials and Energy Conversion Devices School of Materials and EnergyGuangdong University of TechnologyGuangzhou510006China School of Natural Sciences and Mathematics Ural Federal UniversityEkaterinburg20000Russia School of Materials Science and Engineering State Key Laboratory of Material Processing and Die&Mould TechnologyHuazhong University of Science and TechnologyWuhan430074China School of Microelectronics Xidian UniversityXi’an710071China Functional Materials and Acousto-Optic Instruments Institute School of Instrumentation Science and EngineeringHarbin Institute of TechnologyHarbin150080China

The reported electrocaloric(EC)effect in ferroelectrics is poised for application in the next generation of solidstate refrigeration technology,exhibiting substantial developmental *** study introduces a novel and efficient EC effect strategy in(1-x)Pb(Lu_(1/2)Nb_(1/2))O_(3)-xPbTiO_(3)(PLN-xPT)ceramics for low electric-fielddriven ***-field simulations provide fundamental insights into thermally induced continuous phase transitions,guiding subsequent experimental investigations.A comprehensive composition/temperature-driven phase evolution diagram is constructed,elucidating the sequential transformation from ferroelectric(FE)to antiferroelectric(AFE)and finally to paraelectric(PE)phases for x=0.10-0.18 *** measurements of EC performance highlight x=0.16 as an outstanding performer,exhibiting remarkable properties,including an adiabatic temperature change(ΔT)of 3.03 K,EC strength(ΔT/ΔE)of 0.08 K cm kV-1,and a temperature span(Tspan)of 31℃.The superior EC effect performance is attributed to the temperature-induced FE to AFE transition at low electric fields and diffusion phase transition behavior contributing to the wide *** work provides valuable insights into developing high-performance EC effect across broad temperature ranges through the strategic design of continuous phase transitions,offering a simplified and economical approach for advancing ecofriendly and efficient solid-state cooling technologies.

关键词： PbPb(Lu_(1/2)Nb_(1/2))O_(3)-xPbTiO_(3)(PLN-PT) Electrocaloric effect(ECE) Phase transition Low electric field Antiferroelectric

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Resistive Memory-based Neural Differential Equation Solver for Score-based Diffusion Model

arXiv

引用

arXiv 2024年

作者： Yang, Jichang Chen, Hegan Chen, Jia Wang, Songqi Wang, Shaocong Yu, Yifei Chen, Xi Wang, Bo Zhang, Xinyuan Cui, Binbin Li, Yi Lin, Ning Xu, Meng Li, Yi Xu, Xiaoxin Qi, Xiaojuan Wang, Zhongrui Zhang, Xumeng Shang, Dashan Wang, Han Liu, Qi Cheng, Kwang-Ting Liu, Ming Department of Electrical and Electronic Engineering the University of Hong Kong Hong Kong ACCESS – AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai200433 China Institute of the Mind the University of Hong Kong Hong Kong University of Chinese Academy of Sciences Beijing100049 China School of Integrated Circuits Hubei Key Laboratory for Advanced Memories Huazhong University of Science and Technology Wuhan430074 China Department of Electronic and Computer Engineering the Hong Kong University of Science and Technology Hong Kong

Human brains image complicated scenes when reading a novel. Replicating this imagination is one of the ultimate goals of AI-Generated Content (AIGC). However, current AIGC methods, such as score-based diffusion, are still deficient in terms of rapidity and efficiency. This deficiency is rooted in the difference between the brain and digital computers. Digital computers have physically separated storage and processing units, resulting in frequent data transfers during iterative calculations, incurring large time and energy overheads. This issue is further intensified by the conversion of inherently continuous and analog generation dynamics, which can be formulated by neural differential equations, into discrete and digital operations. Inspired by the brain, we propose a time-continuous and analog in-memory neural differential equation solver for score-based diffusion, employing emerging resistive memory. The integration of storage and computation within resistive memory synapses surmount the von Neumann bottleneck, benefiting the generative speed and energy efficiency. The closed-loop feedback integrator is time-continuous, analog, and compact, physically implementing an infinite-depth neural network. Moreover, the software-hardware co-design is intrinsically robust to analog noise. We experimentally validate our solution with 180 nm resistive memory in-memory computing macros. Demonstrating equivalent generative quality to the software baseline, our system achieved remarkable enhancements in generative speed for both unconditional and conditional generation tasks, by factors of 64.8 and 156.5, respectively. Moreover, it accomplished reductions in energy consumption by factors of 5.2 and 4.1. Our approach heralds a new horizon for hardware solutions in edge computing for generative AI applications. © 2024, CC BY-NC-SA.

关键词： Diffusion

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Emerging Internet of Things driven carbon nanotubes-based devices

引用

Nano Research 2022年第5期15卷 4613-4637页

作者： Shu Zhang Jinbo Pang Yufen Li Feng Yang Thomas Gemming Kai Wang Xiao Wang Songang Peng Xiaoyan Liu Bin Chang Hong Liu Weijia Zhou Gianaurelio Cuniberti Mark HRümmeli Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong Institute for Advanced Interdisciplinary Research(iAIR)University of JinanJinan 250022China Department of Chemistry Guangdong Provincial Key Laboratory of CatalysisSouthern University of Science and TechnologyShenzhen 518055China Leibniz Institute for Solid State and Materials Research Dresden P.O.Box 270116Dresden D-01171Germany State Key Laboratory of Crystal Materials Center of Bio&Micro/Nano Functional MaterialsShandong University27 Shandanan RoadJinan 250100China School of Electrical Engineering Qingdao UniversityQingdao 266071China Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences 1068 Xueyuan AvenueShenzhen University TownShenzhen 518055China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China School of Chemistry and Chemical Engineering University of JinanJinan 250022China College of Energy Soochow Institute for Energy and Materials InnovationsSoochow UniversitySuzhou 215006China Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province Soochow UniversitySuzhou 215006China Centre of Polymer and Carbon Materials Polish Academy of SciencesM.Curie Sklodowskiej 34Zabrze 41-819Poland Institute of Environmental Technology(CEET) VSB-Technical University of Ostrava17.Listopadu 15Ostrava 70833Czech Republic Dresden Center for Computational Materials Science Technische Universität DresdenDresden 01062Germany Dresden Center for Intelligent Materials(GCL DCIM) Technische Universität DresdenDresden 01062Germany Institute for Materials Science and Max Bergmann Center of Biomaterials Technische Universität DresdenDresden 01069Germany Center for Advancing Electronics D

Carbon nanotubes(CNTs)have attracted great attentions in the field of electronics,sensors,healthcare,and energy *** emerging applications have driven the carbon nanotube research in a rapid ***,the structure control over CNTs has inspired an intensive research vortex due to the high promises in electronic and optical device ***,this in-depth review is anticipated to provide insights into the controllable synthesis and applications of high-quality ***,the general synthesis and post-purification of CNTs are briefly ***,the state-of-the-art electronic device applications are discussed,including field-effect transistors,gas sensors,DNA biosensors,and pressure ***,the optical sensors are delivered based on the *** addition,energy applications of CNTs are discussed such as thermoelectric energy ***,future opportunities are proposed for the Internet of Things(IoT)oriented sensors,data processing,and artificial intelligence.

关键词： carbon nanotubes electronics sensors electronic skins Internet of Things artificial intelligence

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Improvement of thermal stability of nickel germanide using nitrogen plasma pretreatment for germanium-based technology

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Science China(Information Sciences) 2018年第10期61卷 285-287页

作者： Bingxin ZHANG Xia AN Pengqiang LIU Xiangyang HU Ming LI Xing ZHANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

Dear editor,Ge has been considered as a very promising candidate as a channel material of MOSFET to extend Moore’s law beyond sub-7 nm node, due to its high and symmetric mobility, as well as the compatibility with conventional Si process [1, 2].In spite of higher carrier mobility than Si, there are still several challenges for Ge MOSFETs, such as low electrical concentration of n-type dopants and high electron Schottky barrier height, resulting in large source/drain (S/D) series resistance.

关键词： Improvement of thermal stability of nickel germanide using nitrogen plasma pretreatment for germanium-based technology NPP Ni

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Direct Cu-polyimide Bonding Achieved by Surface Activation and Pt-catalyzed Formic Acid Atmosphere

Direct Cu-polyimide Bonding Achieved by Surface Activation a...

引用

IEEE International Conference on Integrated circuits, Technologies and Applications (ICTA)

作者： Ying Meng Runhua Gao Xinhua Wang Xiaojuan Chen Sen Huang Ke Wei Dahai Wang Fengwen Mu Xinyu Liu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

ISBN: (纸本)9781665417488

Recent flexible printed circuit applications of high-frequency wireless communication systems require thicker metal layers on substrates for lower ohmic losses. In this paper, a Cu layer over 50-micron thick was directly generated on the polyimide substrate by heterogeneous bonding method without interlayer. The polyimide was first sputtered a 200 nm-thick Cu layer, and then was activated by oxygen plasma to improve its hydrophilicity and achieve direct adhesion between polyimide and nanoscale Cu deposition, and eventually was bonded with a 50micron-thick Cu foil in a Pt-catalyzed formic acid atmosphere by thermo-compression. The effectiveness of this method was verified by comparing bonding interfaces, shear strength, and fracture modes of bonded samples with and without a Cr interlayer. This method provides a new idea for the integration of heterogeneous materials needed in wearable products and flexible printed circuits.

关键词： Wireless communication Integrated circuit technology Flexible printed circuits Atmosphere Metals Polyimides Nanoscale devices

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