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A multi-region trap characterization method and its reliability application on STI-based high-voltage LDMOSFETs

A multi-region trap characterization method and its reliabil...

引用

International Symposium on Power Semiconductor devices and Ics (ISPSD)

作者： Yandong He Ganggang Zhang Xing Zhang Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits Peking University Beijing China

The STI-based laterally diffused metal-oxide-semiconductor (LDMOS) devices have become popular with its better tradeoff between breakdown voltage and on-resistance and its compatibility with the standard complementary metal-oxide-semiconductor (CMOS) process. In this paper, a multi-region trap characterization direct current current-voltage (MR-DCIV) technique was proposed to characterize interface state generation in both channel and STI drift regions. The correlation between interface trap and MR-DCIV current has been verified by two-dimensional device simulation. Degradation of STI-based LDMOS transistors in various reliability stress modes is investigated experimentally by proposed technique. The impact of interface state location on device electrical characteristics is analyzed from measurement and simulation. Our study reveals that OFF-state stress becomes the worst degradation mode in term of the on-resistance degradation, which is attributed to interface state generation under STI drift region.

关键词： Stress Interface states Degradation Logic gates Substrates Voltage measurement

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Time Divided Architecture for Closed Loop MEMS Capacitive Accelerometer

Time Divided Architecture for Closed Loop MEMS Capacitive Ac...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Jingqing Huang Tingting Zhang Meng Zhao Lichen Hong Yacong Zhang Wengao Lu Zhongjian Chen Yilong Hao Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University

This paper mainly discusses issues concerning the architecture of time divided closed loop accelerometer. For this particular architecture mathematical relationship between the external acceleration detected by sensor and the voltage output of the readout circuits is deduced. Both Matlab/Simulink model and Verilog-A model for such architecture are *** results agree with the mathematical *** circuits designed to work under 50kHz with feedback duty cycle ηbeing 60% are fabricated using 0.35μm HV CMOS *** results show a sensitivity of 1.518V/g.

关键词： Mathematical model Force Integrated circuit modeling Accelerometers Electrostatics MATLAB

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Investigation on Channel Hot Carrier Degradation of Ultra Deep Submicron SOI pMOSFETs

Investigation on Channel Hot Carrier Degradation of Ultra De...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Liang-Xi Huang Xia An Fei Tan Wei-Kang Wu Ru Huang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

ISBN: (纸本)9781467324748

The bias dependence of Channel Hot Carrier (CHC)degradation in 0.18μm SOI pMOSFETs is investigated in this *** classical bias modes (Vg@Isubmax and Vg=Vd)were applied to analyze the CHC degradation behavior of SOI *** results show that at low Vg,hot carriers injection produced by impact ionization is the main factor contributed to ***,the degradation stressed at high Vg is controlled by both CHC and NBTI effect,showing the NBTI-like behavior at room temperature which indicates that NBTI effect is the dominant factor.A possible mechanism is put forward to explain the enhanced CHC degradation under Vg=Vd compared with pure NBTI *** influence of floating body on the performance degradation of PDSOI devices is also investigated.

关键词： SOI CHC Investigation on Channel Hot Carrier Degradation of Ultra Deep Submicron SOI pMOSFETs

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A Radiation Detection Readout Circuit with Current Feedback Baseline Holder

A Radiation Detection Readout Circuit with Current Feedback ...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Xiao-Lu Chen Ya-Cong Zhang Wen-Gao Lu Zhong-Jian Chen Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

This paper describes a radiation detection readout circuit for portable dosimeter which is aimed at low power,low noise and high counting rate.A current feedback baseline holder circuit is proposed to solve the baseline shift problem without any other performance *** core circuit has been implemented in 0.35μm CMOS *** achieves 46mV/fC conversion gain,200kcps counting rate and consumes 260μA current from 3.3V *** no detector is connected to the chip,the equivalent input noise charge is 0.094fC rms.

关键词： A Radiation Detection Readout Circuit with Current Feedback Baseline Holder

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Reactive Ion Etching of Germanium Using SF6/CHF3/He gas mixture

Reactive Ion Etching of Germanium Using SF6/CHF3/He gas mixt...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Min Li Meng Lin Quanxin Yun Zhiqiang Li Xia An Ming Li Xing Zhang Ru Huang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

The effect of CHF3 gas flow rate on the trench shape and etch rate was studied for germanium-based device *** this study,a sidewall tilt angle larger than 80°with the trench depth of 300nm was achieved by optimizing the flow rate ratio of SF6/CHF3/He gas ***,based on the experimental results,a Linear Reactive Ion Etching(RIE) Model was proposed to predict the optimized composition of the SF6/CHF3/He gas mixture to obtain steep trenches with low etch rate,which may provide the guideline for the germanium etching process design.

关键词： RIE Reactive Ion Etching of Germanium Using SF6/CHF3/He gas mixture CHF

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Insights into Stress-Induced Degradation of STI-based LDMOSFETs by MR-DCIV spectroscopy

Insights into Stress-Induced Degradation of STI-based LDMOSF...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Yandong He Lin Han Ganggang Zhang Xing Zhang Congming Qi Wei Su Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits Peking University CSMC Technologies Corporation

ISBN: (纸本)9781467324748

Stress-induced degradation of STI-based LDMOSFETs has been studied by multi-region direct-current current voltage(MR-DCIV)spectroscopy, a new point of view over the traditional CP and Id-Vg characterization *** capability of identifying the interface states in LDMOSFETs has been demonstrated by MR-DCIV *** correlation between device degradation and MR-DCIV spectrum has been verified by 2D device simulation. Experimental results and the degradation mechanism for both ON-and OFF-state stresses have been addressed. The role played by the interface state at channel and STI region in LDMOSFETs has been clearly revealed through MR-DCIV *** term of the on-resistance,the OFF-state stress leads to the worst degradation in an STI-based nLDMOS,which is attributed to the interface state generation under STI region.

关键词： LDMOS STI Insights into Stress-Induced Degradation of STI-based LDMOSFETs by MR-DCIV spectroscopy

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Low power readout circuit for 384×288 uncooled IRFPA with novel readout stage

Low power readout circuit for 384×288 uncooled IRFPA with n...

引用

IEEE Conference on Electron devices and Solid-State circuits

作者： Xiangyun Meng Yacong Zhang Sanlin Liu Meng Chen Wengao Lu Zhongjian Chen Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University Beijing China

A readout integrated circuit for 384×288 uncooled infrared focal plane array (IRFPA) is presented in this paper. To overcome the kickback to sample and hold stage with less power consumption, a novel readout stage of a Class AB op-amp with input stage in each column and sharing one cascode output stage is introduced. This IRFPA readout circuit has been designed and fabricated in 0.35um CMOS technology. The readout speed of the circuit can reach 7MHz, the dynamic range is 86.5dB and power consumption is 108mW. A 32×32 experimental chip has been verified by test results.

关键词： Power demand Bolometers Arrays Capacitance Dynamic range Crosstalk Simulation

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A 1.25/2.5/3.125Gbps CDR circuit with a phase interpolator for RapidIO application

A 1.25/2.5/3.125Gbps CDR circuit with a phase interpolator f...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Hailing Yang Yuan Wang Song Jia Ganggang Zhang Xing Zhang Key Laboratory of Microelectronics Devices and Circuits（MoE） Institute of MicroelectronicsPeking University

ISBN: (纸本)9781467324748

A phase interpolator（PI）-based clock data recovery（CDR）circuit for RapidIO application is presented,which avoids the coupled interference of *** the integration of a digital control cell,the complex and area consumption has been reduced *** adaptive bandwidth PLL structure is adopted so that it can provide clocks of three frequencies while maintain a good jitter *** a 0.13um CMOS process,the circuit has a jitter of 11.2ps@3.125Gbps with a power consumption of 21.7mW under 1.2V,and the core circuit area is 0.16mm2.

关键词： clock and data recovery phase interpolator current mode logic adaptive bandwidth PLL

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Three-dimensional modeling of AlGaN/GaN HEMT including electro-thermal coupling effects

Three-dimensional modeling of AlGaN/GaN HEMT including elect...

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International Workshop on Microwave and Millimeter Wave circuits and System Technology (MMWCST)

作者： Jianhui Wang Xinhua Wang Lei Pang Xiaojuan Chen Xin Kong Xinyu Liu Microwave Devices and Integrated Circuits Department Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

Thermal performance of AlGaN/GaN HEMT is a critical issue during the design stage, since it significantly affect the lifetime of the device. This paper introduces a three-dimensional modeling technique including electro-thermal coupling effects for investing the thermal characteristic of the AlGaN/GaN HEMT. The method achieves a good balance between simulation time and accuracy through iterative calculation between the 2D and 3D model.

关键词： Gallium nitride Solid modeling Aluminum gallium nitride HEMTs Temperature measurement Logic gates Silicon carbide

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Dislocation induced nonuniform surface morphology of Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN HEMTs

Dislocation induced nonuniform surface morphology of Ti/Al/N...

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International Workshop on Microwave and Millimeter Wave circuits and System Technology (MMWCST)

作者： Xin Kong Ke Wei Guoguo Liu Jianhui Wang Xinyu Liu Microwave Devices and Integrated Circuits Department Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

In this study, Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors was fabricated and demonstrated distribution of bright and dark areas on the surface. Surface element analyses show that it is of great difference in the Ni and Au content between these two kinds of regions. According to transmission electron microscopy and corresponding Electron dispersive x-ray spectroscopy analyses, plenty of Ni was detected in dislocation rich regions while rare Ni was left in dislocation free regions so that Au tended to accumulate in the form of AlAu x binary alloy. The surface nonuniformity presented on the surface should be attributed to the nonuniform interfacial reactions resulted from the dislocations.

关键词： Aluminum gallium nitride Gallium nitride Surface morphology Nickel Gold Ohmic contacts

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