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Fabrication and characteristics of ZnO-based thin film transistors

Fabrication and characteristics of ZnO-based thin film trans...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Dedong Han Yi Wang Shengdong Zhang Lei Sun Jinfeng Kang Xiaoyan Liu Gang Du Lifeng Liu Ruqi Han Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781424421855

ZnO-based thin-film transistors (TFT) have been fabricated on p-Si (100) substrates by radio frequency (rf) magnetron sputtering at room temperature with a bottom gate configuration. The XRD and SEM show that ZnO films had high crystalline quality. The ZnO films present an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The electrical properties of ZnO-based TFTs were investigated by I D -V D and I D -V G measurements. The ZnO TFT operates in the enhancement mode with a channel mobility of 6.86 cm 2 /V · s. The combination of transparency, high channel mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of flat panel display (FDP).

关键词： Fabrication Thin film transistors Zinc oxide Optical films Substrates Temperature Radio frequency Sputtering X-ray scattering Crystallization

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Structure and magnetic properties of Co-doped TiO2 nanotubes by aqueous solution method

Structure and magnetic properties of Co-doped TiO2 nanotubes...

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International Conference on Solid-State and Integrated Circuit Technology

作者： A-bo Zheng Yan Li Yi Wang Lei Sun Li-feng Liu De-dong Han Jin-feng Kang Xing Zhang Ru-qi Han Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781424421855;9781424421862

The Co-doped titanium dioxide nanotubes were synthesized via the aqueous solution reaction. After hydrogenation, room temperature ferromagnetism (RTFM) was found in the cobalt doped titanium dioxide nanotubes at 300 K by the vibrate sample magnetometer. As the concentration of cobalt increased, the observed ferromagnetism became stronger. The X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy were performed and excluded the existence of cobalt cluster. Therefore, the magnetic ions and oxygen vacancies induced by hydrogenation contribute to the observed ferromagnetism at 300 K.

关键词： Magnetic properties Cobalt Titanium Nanotubes Scanning electron microscopy Transmission electron microscopy Temperature Magnetometers X-ray diffraction Dispersion

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Theoretical study of low-energy electron penetration in resist-substrate target by Monte Carlo simulation

Theoretical study of low-energy electron penetration in resi...

引用

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Liming Ren Baoqin Chen Ru Huang Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Institute of Microelectronics of the Chinese Academy of Sciences

Low-energy electron beam lithography has a variety of *** traditional electron scattering model consisting of Rutherford elastic scattering cross section and Bethe continuous slowing down approximation formula are not suitable for low-energy electron beam lithography.A more accurate physical model describing the low-energy electron scattering processes was proposed in this *** Monte Carlo method was used to simulate the complex scattering processes of Gaussian-distribution low-energy electron beam in the target of thin film on thick *** simulation results show that low-energy electron beam lithographyhas advantages of high throughput,low proximity effects and small damage to the underlying *** is in agreement with the conclusion got from Lee et al's and Peterson et al's experiments.

关键词： Theoretical study of low-energy electron penetration in resist-substrate target by Monte Carlo simulation Carlo Monte

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A Low-Voltage Voltage Doubler without Body Effect

A Low-Voltage Voltage Doubler without Body Effect

引用

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Ming Li Li-Wu Yang Jinfeng Kang Yangyuan Wang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Semiconductor Manufacturing International Corporation

＜正＞A voltage doubler,which avoids body effect and then improves rise time and efficiency even with 1V power supply,is *** art is designed for word line boosting,using 0.18um EEPROM *** only the voltage doubler can work with capacitive load normally,but also it can supply load current and achieve higher *** whole circuit can be implemented on chip and is suitable for low voltage *** addition,theoretical analysis and simulation results have been given.

关键词： [IEEE keyword]EPROM Equations Mathematical model MOSFETs Threshold voltage Transistors Power supplies

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Resistive switching behaviors and mechanism of transition metal oxides-based memory devices

Resistive switching behaviors and mechanism of transition me...

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International Conference on Solid-State and Integrated Circuit Technology

作者： J. F. Kang B. Sun B. Gao N. Xu X. Sun L. F. Liu Y. Wang X. Y. Liu R. Q. Han Y.Y. Wang Institute of Microelectronics Ministry of Education Peking University and Key Laboratory of Microelectronic Devices and Circuits Beijing China

ISBN: (纸本)9781424421855

In this paper, the characteristics and mechanism of the transition metal oxide (TMO) based resistive switching memory (RRAM) devices were addressed. The results show that doping in oxide matrix materials, electrode material, and operating mode of the set/reset process may significantly affect the resistive switching behaviors of RRAM devices. Optimizing the dopants and matrix materials, electrode materials, device structure, and operating modes and understanding the related mechanisms are required to achieve the excellent device performance of TMO-based RRAM for the memory application. A unified physical model, based on the electron hopping transport between oxygen vacancies along the conductive filament paths, is used to explain and describe the resistive switching behaviors of the TMO based RRAM devices.

关键词： Voltage Zinc oxide Electrodes Sun microelectronics Doping Conducting materials Tin Temperature Laboratories

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Recovery Characteristics of NBTI of pMOSFETs with Oxynitride Dielectrics Under Drain Bias

Recovery Characteristics of NBTI of pMOSFETs with Oxynitride...

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2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Jiaqi Yang Junyan Pan Lihua Huang Xiaoyan Liu Ruqi Han and Jinfeng Kang L.F.Zhang Z.W.Zhu C.C.Liao H.M.Wu Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Semiconductor Manufacturing International Corporation

In this paper,the recovery characteristics of negative bias temperature instability（NBTI） of pMOSFETs under drain bias were *** is observed that,the drain bias not only worsens the NBTI degradation in high |V| region but also suppresses the recovery ratio of *** time evolutions of recovery show that the drain bias dependent NBTI recovery is mainly related to the fast recovery effect in initial ls. While in long time scale,the recovery obeys power law dependence on time.A physical model based on donor-type interface traps neutralization at the beginning of recovery is proposed to explain the suppressed recovery ratio under drain bias.

关键词： Recovery Characteristics of NBTI of pMOSFETs with Oxynitride Dielectrics Under Drain Bias

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3-D Simulation of Geometrical Variations Impact on Nanoscale FinFETs

3-D Simulation of Geometrical Variations Impact on Nanoscale...

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2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Shimeng Yu Yuning Zhao Yuncheng Song Gang Du Jinfeng Kang Ruqi Han Xiaoyan Liu Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Shenzhen Graduate School Peking University

Intra-die fluctuations in the nanoscale CMOS technology emerge inherently to geometrical variations such as line edge roughness(LER) and oxide thickness fluctuations (OTF).A full 3-D statistical simulation is presented to investigate the impact of geometrical variations on the FinFETs *** this work,roughness is introduced by a Fourier analysis of the power spectrum of Gaussian autocorrelation *** influence of different geometrical variation sources is compared and *** results shows that FinFETs performance is most sensitive to the fin LER,which causes a remarkable shift and fluctuations in threshold voltage, drain induced barrier lower effect(DIBL) and leakage current. The impact of gate LER follows that of fin *** simulation also suggests quantum confinement effect accounts for the aggressive fluctuations due to fin LER.

关键词： D Simulation of Geometrical Variations Impact on Nanoscale FinFETs

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Simulation of Charge Trapping Memory with Novel Structures

Simulation of Charge Trapping Memory with Novel Structures

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2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： X.Y.Liu Y.C.Song Gang Du R.Q Han Z.L.Xia D.Kim K-H Lee Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Samsung Electronics Co.Ltd

＜正＞Ⅰ.Introduction Flash memories are one of the basic building blocks of today’s electronic *** floating gate type of Flash memory is impossible to scale down to beyond 45nm due to the difficulty in scaling the tunnel oxide and the gate coupling ratio[1].Because of the difficulty in maintaining high gate coupling ratio and preventing cross talk between neighboring cells,NAND technology is forecasted to migrate gradually from floating gate devices（FG） to charge trapping memory（CTM）[2]. CTM are not sensitive to tunnel oxide damage since the charge is stored in discrete traps and one weak spot does

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A New Method to Evaluate the Total Dose Radiation Effect of MOS devices

A New Method to Evaluate the Total Dose Radiation Effect of ...

引用

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Hao Tang Yi Wang Jinyan Wang Yijun Zheng Yufeng Jin Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Peking University Shenzhen Graduate School

The total dose radiation effect（TDRE） has been regarded as one of the most harmful factors to degrade MOS *** this paper,a simple new method called avalanche injection of holes is introduced to simulate or displace the radiation experiments to determine the TDRE of MOS *** TDRE, avalanche injection of holes can also provide sufficient holes to flow into the gate oxide layer where a small part of these holes can be trapped in the defects and cause a shift of flat-band voltage(ΔV) of MOS device,we can conclude that the structure which has a greaterΔV would be easier to be affected by TDRE.

关键词： LPCVD A New Method to Evaluate the Total Dose Radiation Effect of MOS devices

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An Acquisition Circuit in Global Positioning System Receivers

An Acquisition Circuit in Global Positioning System Receiver...

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2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Xiaoxin Cui Chungan Peng Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Institute of Beijing Remote Sensing Information

The conventional matched filter structures are investigated in this paper,An acquisition circuit based on the polyphase form matched filter in Global Positioning System(GPS) receiver is *** the cost of less hardware resource,the significant advantage in the speed of synchronization is *** 32×128 polyphase form matched filter,the critical path delay approximately reduces 1/2,the sample frequency would be double.

关键词： An Acquisition Circuit in Global Positioning System Receivers

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