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Improved turn-on behavior in a diode-triggered silicon-controlled rectifier for high-speed electrostatic discharge protection

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Science China(Information Sciences) 2019年第6期62卷 79-86页

作者： Lizhong ZHANG Yuan WANG Yize WANG Xing ZHANG YANDong HE Key Laboratory of Microelectronic Devices and Circuits (MoE) Institute of MicroelectronicsPeking University

A conventional diode-triggered silicon-controlled rectifier(DTSCR) structure with a layout strategy for electrostatic discharge(ESD) protection is presented and confirmed in a 65-nm CMOS *** modified device is featured by a scaled-down trigger-diode string, which shortens its turn-on time using a variable scaling factor. To confirm the parasitic resistance adjustments of the modified DTSCR, transmission line pulsing(TLP)/very fast transmission line pulsing(VF-TLP) tests and simulations are performed on the device. Compared to a conventional DTSCR, this structure exhibits an improved turn-on speed and robustness, which are suitable for I/O protection of ESD events in the nanosecond range, particularly the charged-device model(CDM) event.

关键词： diode triggered silicon controlled rectifier(DTSCR) electrostatic discharge(ESD) transmission line pulsing(TLP) very fast transmission line pulsing(VF-TLP) turn-on behavior

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Low power and high uniformity of HfOx-based RRAM via tip-enhanced electric fields

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Science China(Information Sciences) 2019年第10期62卷 164-170页

作者： Xiaokang LI Baotong ZHANG Bowen WANG Xiaoyan XU Yuancheng YANG Shuang SUN Qifeng CAI Shijie HU Xia AN Ming LI Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University

In this paper, the HfOx-based resistive random access memory（RRAM） devices with sub-100 nm pyramid-type electrodes were fabricated. With the help of tip-enhanced electric field around the pyramid-type electrodes, it was experimentally demonstrated that the novel devices have better cycle-to-cycle variation control, lower forming/set voltage（1.97/0.7V） and faster switching speed（≤30 ns under 0.9V pulse） as well as better endurance reliability than conventional flat electrode resistive memory devices. In addition,the novel RRAM is experimentally demonstrated with independence of electrode number for the first time to present great potential in scaling down. This novel structure metal-oxide based RRAM will be suitable for the future low-power non-volatile memory application.

关键词： RRAM pyramid-type electrode variation reliability switching speed conducting filament

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Unsupervised Learning of Spike-Timing-Dependent Plasticity Based on a Neuromorphic Implementation

Unsupervised Learning of Spike-Timing-Dependent Plasticity B...

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IEEE International Conference on Artificial Intelligence circuits and Systems (AICAS)

作者： Yi Zhong Zilin Wang Xiaoxin Cui Jian Cao Yuan Wang Key Laboratory of Microelectronic Devices and Circuits (MoE) MPW Center School of Integrated Circuits Peking University Beijing Laboratory of Future Integrated Circuit Technology and Science Peking University Beijing China

Spiking neural network is a promising endeavor to fulfill brain-like intelligence on the chip. Its learning rule, i.e., spike-timing-dependent plasticity (STDP), derived from neurobiology, is perceived as a powerful candidate to facilitate low-cost and high-performance unsupervised training. In this paper, we present a temporal coding based STDP learning method (TC-STDP) to verify the counter and look-up table based circuit design on a neuromorphic prototype chip. In order to perform on-chip STDP learning in an unsupervised manner, this paper concentrates more on detailing the experimental procedures and practical evaluations, where we introduce the matching score as a quantitative index to carry out label assignment and accuracy confirmation. Evaluation experiments demonstrate that the unsupervised STDP learning achieves best on-chip recognition accuracies of 93.51%, 80.33% on MNIST and EMNIST datasets, respectively. Moreover, experiments conducted on ModelNet40 3D dataset also validate the effectiveness of unsupervised STDP rule to perform possible incremental learning.

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Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moiré superlattices

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Journal of Semiconductors 2023年第1期44卷 43-55页

作者： Xinyu Huang Xu Han Yunyun Dai Xiaolong Xu Jiahao Yan Mengting Huang Pengfei Ding Decheng Zhang Hui Chen Vijay Laxmi Xu Wu Liwei Liu Yeliang Wang Yang Xu Yuan Huang Advanced Research Institute of Multidisciplinary Science Beijing Institute of TechnologyBeijing 100081China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100049China School of Integrated Circuits and Electronics MIIT Key Laboratory for Low-Dimensional Quantum Structure and DevicesBeijing Institute of TechnologyBeijing 100081China BIT Chongqing Institute of Microelectronics and Microsystems Chongqing 401332China

Moiré superlattices are formed when overlaying two materials with a slight mismatch in twist angle or lattice constant. They provide a novel platform for the study of strong electronic correlations and non-trivial band topology, where emergent phenomena such as correlated insulating states, unconventional superconductivity, and quantum anomalous Hall effect are discovered. In this review, we focus on the semiconducting transition metal dichalcogenides(TMDs) based moiré systems that host intriguing flat-band physics. We first review the exfoliation methods of two-dimensional materials and the fabrication technique of their moiré structures. Secondly, we overview the progress of the optically excited moiré excitons, which render the main discovery in the early experiments on TMD moiré systems. We then introduce the formation mechanism of flat bands and their potential in the quantum simulation of the Hubbard model with tunable doping, degeneracies, and correlation strength. Finally, we briefly discuss the challenges and future perspectives of this field.

关键词： flat-band physics two-dimensional materials moirésuperlattices Hubbard model moiréexcitons

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A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

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Science China(Information Sciences) 2020年第6期63卷 253-255页

作者： Gong CHEN Bocheng YU Xiaokang LI Xiaoqiao DONG Xiaoyan XU Zhihong LI Ru HUANG Ming LI Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Peking University Faculty of Information Technology Beijing University of Technology

Dear editor,Recently, the integration of photosensitive material and electronic nanodevice has been the center of attention with Internet of things (IoT)technology development [1–3]. The immobilization of such photoactive molecules on the semiconductor surface was necessarily adopted to employ their photoelectric characteristics which can be observed in the solution. Porphyrin-based hybrid transistors have emerged as promising candidates for photonic sensing application due to the

关键词： A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

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Deep insight into the voltage amplification effect from ferroelectric negative capacitance

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Science China(Information Sciences) 2019年第8期62卷 216-218页

作者： Huimin WANG Qianqian HUANG Mengxuan YANG Xing ZHANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics

Dear editor,Power dissipation has become one of the most serious problems for nano-electronics. For conventional transistors, the operation voltage cannot be continuously reduced due to the fundamental limitation of subthreshold swing (SS)(60 mV/decade at room temperature)[1, 2]. The voltage amplification (VA) induced by the negative capacitance

关键词： Deep insight into the voltage amplification effect from ferroelectric negative capacitance

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Study on the Anomalous Characteristics of Random Telegraph Noise in FeFETs

Study on the Anomalous Characteristics of Random Telegraph N...

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IEEE Silicon Nanoelectronics Workshop (SNW)

作者： Puyang Cai Yishan Wu Zixuan Sun Hao Li Xiaolei Wang Zhigang Ji Runsheng Wang Ru Huang School of Integrated Circuits Peking University Beijing China National Key Laboratory of Advanced Micro and Nano Manufacture Technology Shanghai Jiaotong University Shanghai China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences China Beijing

ISBN: (数字)9798350391633

ISBN: (纸本)9798350391640

In this work, we investigate the behavior of random telegraph noise (RTN) in HfO 2 -based FeFETs. Anomalously high location factors of RTN in FeFETs are observed for the first time, which can be successfully explained by the lateral domain wall motion, with the help of a dynamic 2-D phase-field simulation. This work reveals the unique characteristics of RTN in HfO 2 -based FeFETs and provides insight into the ferroelectric switching process.

关键词： Conferences Noise Dynamics Switches Hafnium oxide Silicon FeFETs

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A CMOS Time-of-Flight Image Sensor with High Dynamic Range Digital Pixel 14

A CMOS Time-of-Flight Image Sensor with High Dynamic Range D...

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14th IEEE International Conference on ASIC, ASICON 2021

作者： Yu, Shanzhe Zhang, Yacong Zhou, Fei Lu, Wengao Lei, Shuyu Chen, Zhongjian Peking University Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics China ABAX Sensing Electronic Technology Ningbo China

ISBN: (纸本)9781665411493

To widen measuring range and suppress background light, a CMOS time-of-flight image sensor with high dynamic range digital pixel is proposed. The sensing charge is quantized by extended-counting analogue-to-digital converter (ADC) which consists of pixel coarse quantization and column fine quantization. To maximize dynamic range in limited pixel area, the coarse quantization circuit is shared by 2×2 pixels, in which a novel up/down counter with a small number of transistors is proposed. Based on the pixel circuit, a 32×32 prototype TOF imager with 12μm-pitch digital pixel is designed in 0.11μm 1P4M CMOS image sensor technology. Simulation results show that a 104.6dB dynamic range of this ADC for wide measuring range is achieved at a frame rate of 50Hz. © 2021 IEEE.

关键词： Image sensors

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In-memory computing with emerging nonvolatile memory devices

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Science China(Information Sciences) 2021年第12期64卷 23-68页

作者： Caidie CHENG Pek Jun TIW Yimao CAI Xiaoqin YAN Yuchao YANG Ru HUANG State Key Laboratory for Advanced Metals and Materials School of Materials Science and EngineeringUniversity of Science and Technology Beijing Key Laboratory of Microelectronic Devices and Circuits (MOE) Department of Micro/nanoelectronicsPeking University Center for Brain Inspired Chips Institute for Artificial IntelligencePeking University Center for Brain Inspired Intelligence Chinese Institute for Brain Research (CIBR)

The von Neumann bottleneck and memory wall have posed fundamental limitations in latency and energy consumption of modern computers based on von Neumann architecture. In-memory computing represents a radical shift in the computer architecture that can address such problems by merging computing functions within the memory itself. In this article, we review the emerging nonvolatile memory devices,such as resistance-based and charge-based memory devices, that are explored for in-memory computing applications. We will provide an overview of the materials, mechanisms, and integration of these devices,and discuss the optimizations at the device and array levels that are required to better support in-memory computing. Recent progress in the application of in-memory computing in artificial neural networks, spiking neural networks, digital logic in memory as well as hardware security will also be discussed. Finally, we will discuss the remaining challenges in this field and potential pathways to address them.

关键词： in-memory computing von Neumann bottleneck nonvolatile memory energy efficiency neural network

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Improvement of RRAM Uniformity and Analog Characteristics through Localized Metal Doping

Improvement of RRAM Uniformity and Analog Characteristics th...

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2021 China Semiconductor Technology International Conference, CSTIC 2021

作者： Qin, Yabo Wang, Zongwei Chen, Qingyu Ling, Yaotian Wu, Lindong Cai, Yimao Huang, Ru Institute of Microelectronics Peking University Beijing100871 China Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing100871 China

ISBN: (纸本)9781665449458

In this work, the influence of localized metal ion doping on the uniformity and analog behavior in TaOx-based RRAM is investigated. Experimental results show that Al ion local doping can improve the uniformity. The distributions of set/reset voltage and LRS/HRS become tighter. Moreover, the TaOx-based RRAM with Al doping shows excellent analog switching behaviors compared with the device without doping. The underlying mechanism may be explained by the reduced formation energy of oxygen vacancies and relayed traps in the doped area, which makes it easier to form incremental conductive filaments in the regions with high ion doping concentration. © 2021 IEEE.

关键词： RRAM

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