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11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016

作者： Tang, Yi-Dan Shen, Hua-Jun Zhang, Xu-Fang Guo, Fei Bai, Yun Peng, Zhao-Yang Liu, Xin-Yu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing China School of Physical Science and Technology Lanzhou University Lanzhou China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of china Chengdu China

ISBN: (纸本)9783035710434

Ti/Al contacts deposited on p-type epilayer doped with Al at 2×1019 cm-3 are reported. The current-voltage curves of Ti/Al contacts annealed at different temperatures from 800 to 1000 °C were measured, which provided the specific contact resistances (SCRs) of 6.59×10-5 Ω/cm2 and 7.81×10-5Ω/cm2 after annealing at 900°C for 5min and 950°C for 2min, respectively. The microstructures of Ti/Al contact on P-type 4H–SiC were investigated by X-ray diffraction (XRD). The results of XRD show that the phases of Ti3SiC2 was formed at the metal/SiC interface after annealing, which could be effective to ohmic contacts on P-type 4H–SiC. The quantitative phase analysis were also discussed, which show that the phase composition of Ti3SiC2 is key factor for low resistance to P-type 4H–SiC. Moreover, simulations proved that the gradual Ti3SiC2 ISL reduces or eliminates the effective barrier height at the metal/Ti3SiC2/p-type and may also contribute to low contact resistivity. © 2017 Trans Tech Publications, Switzerland.

关键词： X ray diffraction

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A Capacitor Self-Calibration Technique for High Resolution ADCs 13

A Capacitor Self-Calibration Technique for High Resolution A...

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

作者： Yitong Cao Wengao Lu Kezhi Li Zhaokai Liu Zhongjian Chen Yacong Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Peking University Information Technology Institute (Tianjin Binhai)

ISBN: (纸本)9781467397209

In this paper, a novel capacitor self-calibration technique is presented, which can be used in high resolution ADCs, such as SAR ADC and pipeline ADC. The capacitors achieve self-calibration through the adjusting capacitors array and successive approximation(SAR) logic. A 14-bit SAR ADC using capacitor selfcalibration technique we proposed has been designed. The simulation result shows that the SNDR/SFDR has been improved from 63.80 d B/67.89 d B to 78.55 d B/92.36 dB, respectively, using the proposed capacitor self-calibration technique.

关键词： ADC A Capacitor Self-Calibration Technique for High Resolution ADCs SAR

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A 1.67-ppm/°C 64-ppm/V Curvature-Compensated Bandgap Reference Based on a Transcendental Equation 13

A 1.67-ppm/°C 64-ppm/V Curvature-Compensated Bandgap Refere...

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

作者： Ruocheng Wang Wengao Lu Yajun Zhu Yuze Niu Yacong Zhang Zhongjian Chen Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University Peking University Information Technology Institute (Tianjin Binhai)

ISBN: (纸本)9781467397209

This paper proposes a current-mode bandgap referenc which employs a novel "coarse" voltage replication to offset the 2nd-order curvature due to base-emitter voltag of the BJT. The coarse replication is based on a proces insensitive transcendental equation which regulates th independent CTAT current. The bandgap reference which will be implemented in 0.35μm CMOS process has a low operating current of 0.85μA. Under a 2.6V to 4V supply its line sensitivity is 64ppm/V even in the wors condition, and its TC is only 1.67ppm/°C in th temperature range of-55°C to 115°C.

关键词： current-mode bandgap reference curvature compensation low temperature coefficient

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Toward High Carrier mobility and Low Contact Resistance:Laser Cleaning of PMMA Residues on Graphene Surfaces

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Nano-Micro Letters 2016年第4期8卷 336-346页

作者： Yuehui Jia Xin Gong Pei Peng Zidong Wang Zhongzheng Tian Liming Ren Yunyi Fu Han Zhang Materials Physics Laboratory State Key Laboratory for Mesoscopic PhysicsSchool of PhysicsPeking University Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking University School of Electronic and Computer Engineering Peking University Shenzhen Graduate School

Poly(methyl methacrylate)(PMMA) is widely used for graphene transfer and device ***,it inevitably leaves a thin layer of polymer residues after acetone rinsing and leads to dramatic degradation of device *** to eliminate contamination and restore clean surfaces of graphene is still highly *** this paper,we present a reliable and position-controllable method to remove the polymer residues on graphene films by laser *** proper laser conditions,PMMA residues can be substantially reduced without introducing defects to the underlying ***,by applying this laser cleaning technique to the channel and contacts of graphene fieldeffect transistors(GFETs),higher carrier mobility as well as lower contact resistance can be *** work opens a way for probing intrinsic properties of contaminant-free graphene and fabricating high-performance GFETs with both clean channel and intimate graphene/metal contact.

关键词： Graphene PMMA residues Laser exposure Carrier mobility Contact resistance

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A 14-bit 8-column shared SAR ADC for 640×512 IRFPA 13

A 14-bit 8-column shared SAR ADC for 640×512 IRFPA

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

作者： Zhaokai Liu Wengao Lu Yuze Niu Dahe Liu Yacong Zhang Zhongjian Chen Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University Peking University information technology institute (Tianjin Binhai)

ISBN: (纸本)9781467397209

This paper presents a new structure of column-level successive approximation register(SAR) analogue-to-digital converter(ADC) for Infrared Focal Plane Array. In this design, each column has a capacitance array and each comparator and SAR logic block are shared by 8 columns. By using this shared structure, we achieved smaller silicon area, lower power dissipation and lower noise. And shared structure leaves enough space for signal and control wires of ADC blocks, therefore relieves the mutual disturbance among wires. Also, correlated switches are used to cancel the offset generated by charge injection. The conversion accuracy of the proposed ADC is 14 bits and is used for a 640×512 array with a frame rate of 50 Hz.

关键词： ADC SAR A 14-bit 8-column shared SAR ADC for 640 IRFPA

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Design and Optimization of Four-Region Multistep Field Limiting Rings for 10kV 4H-SiC IGBTs

Design and Optimization of Four-Region Multistep Field Limit...

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IEEE International Conference on Solid-State and Integrated Circuit Technology

作者： Ben Tan Xiao-Li Tian Jiang Lu Yun Bai Xiao-Chuan Deng Cheng-Zhan Li Xin-Yu Liu High-Frequency High-Voltage Devices and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing China The State Key Laboratory of Electronic Thin Films and Integrated Devices School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology of China Chengdu China ZhuZhou CRRC Times Electric Co. Ltd ZhuZhou China

A novel edge termination structure with Four-Region Multistep Field Limiting Rings (FRM-FLRs) is proposed and investigated for lOkV 4H-SiC IGBTs. The structure with FRM-FLRs terminal technology exhibits a good blocking performance with 30% less terminal area and 23% higher blocking voltage compared with the conventional Filed limiting Rings (Con-FLRs) structure. Moreover, the structure with FRM-FLRs can decrease the sensitivity of the interface charges, which greatly improves the reliability of the device at the off-state.

关键词： proposed investigated lOkV

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A Digital Multiplexing and Real-time Refresh Dimming Control Circuit Used in LED Driver for Multiple LED strings 13

A Digital Multiplexing and Real-time Refresh Dimming Control...

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

作者： Kezhi Li Wengao Lu Bo Wang Xin'an Wang Yuze Niu Guangyi Chen Yacong Zhang Zhongjian Chen Peking University Shenzhen Graduate School Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Peking University Information Technology Institute (Tianjin Binhai)

ISBN: (纸本)9781467397209

This paper presents a digital dimming control circuit used in a light-emitting diode（LED） driver, allowing it to dim multiple LED strings with only two input ports which receive serial data accompanied with synchronous clock. A multiplexing technique is used to simplify the control circuit, using one DAC to transfer all the dimming messages for each string, and a real-time refresh technique is used to make the transferred dimming voltage keep a high accuracy all the time. The circuit is friendly compatible with the linear current regulator and pulsewidth modulation（PWM） dimming methods. To get a precise dimming control, we build a 10-bit segment R-2R DAC. The simulation results show the dimming voltages for each LED string keep the errors less than 0.5LSB compared with the designed voltages.

关键词： Estimation Field programmable gate arrays OFDM Modulation Filtration Clocks Signal processing algorithms

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Structural optimization of 4H-SiC BJT for ultraviolet detection with high optical gain 16th

Structural optimization of 4H-SiC BJT for ultraviolet detect...

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16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015

作者： Bai, Yun Li, Cheng Zhan Shen, Hua Jun Tang, Yi Dan Liu, Xin Yu Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China Microwave Devices and Integrated Circuits Department The Institute of Microelectronics of Chinese Academy of Sciences Beijing China ZhuZhou CRRC Times Electric CO. LTD ZhuzhouHunan China

ISBN: (纸本)9783035710427

The 4H-SiC n-p-n BJT for ultraviolet detection with high optical gain is proposed and optimized in this paper. The effect of structural parameters of 4H-SiC phototransistor on the performance of the detectors is simulated and the effect mechanism is analyzed. The simulation results show that the 4H-SiC phototransistors detect UV light with a response wavelength below 380 nm. It is suggested that the base parameters are important to the responsivity of the 4H-SiC BJT. With optimized parameters the 4H-SiC UV phototransistor exhibits peak responsivity as high as 4617 A/W corresponding to a quantum gain of 2.2×105 under the bias voltage of 5 V. © 2016 Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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Design and optimization of AlGaN solar-blind double Heterojunction ultraviolet phototransistor 16th

Design and optimization of AlGaN solar-blind double Heteroju...

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16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015

作者： Bai, Yun Shen, Huajun Li, Chengzhan Tang, Yidan Liu, Xinyu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China Microwave Devices and Integrated Circuits Department The Institute of Microelectronics of Chinese Academy of Sciences Beijing China ZhuZhou CRRC Times Electric CO. LTD. ZhuzhouHunan China

ISBN: (纸本)9783035710427

The n-p-i-n AlGaN solar-blind ultraviolet double heterojunction phototransistor (DHPT) with internal gain is proposed and optimized in this paper. The dependences of spectral responsivity and quantum gain on structure parameters of the AlGaN DHPT are simulated in detail. Then, the polarization effect of AlGaN heterojunction on the performance of AlGaN DHPT is also investigated. Results show that positive polarization charge would enhance the photoresponse of the device, whereas the negative polarization charge would reduce the photoresponse significantly. The reasons for the polarization effect on performance of AlGaN DHPT are discussed. © 2016 Trans Tech Publications, Switzerland.

关键词： Phototransistors

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Analytical current model of tunneling field-effect transistor considering the impacts of both gate and drain voltages on tunneling

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Science China(Information Sciences) 2015年第2期58卷 174-181页

作者： WANG Chao WU ChunLei WANG JiaXin HUANG QianQian HUANG Ru Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University

In this paper, a closed-form current model for bulk tunneling field-effect transistor(TFET) is put forward. Based on the operation mechanism, the channel surface potential φsf which involves the impact of both the gate and the drain voltages is established for the first time. In addition, a new calculation method for the dynamic tunneling width, which is the critical parameter for the TFET modeling, is derived from the surface potential. The surface-potential-based current model is established which is in a good agreement with TCAD simulation results.

关键词： tunneling field-effect transistor current model surface potential drain voltage tunneling width

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